C2U G Search Results

81117822

Contextual Info: November 1996 Revision 2.0 FUJITSU DATA SHEET - SD C2U V7282 A -(6 7/84/100/125) T-S 16MByte (2M x 72) CMOS Synchronous DRAM Module - ECC General Description The SDC2UV7282(A)-(67/84/100/125)T-S is a high performance, 16-megabtye synchronous, dynamic RAM module organized

C2U SOT-89

Contextual Info: September 1996 Revision 1.0 FUJITSU DATA SH EET - EDC2UV641 1 /4 -(60/70)(J/T)G-S 16MByte (2Mx 64) CMOS EDO DRAM Module -3.3V General Description The EDC2UV641 (1/4)-(60/70)(J/T)G-S is a high performance, EDO (Extended Data Out) 16-megabyte dynamic RAM module

Contextual Info: cP August 1996 Revision 1.0 FUJI' DATA SHEET - * SDC2U V7282- 67/84/100/125 T-S 16MByte (2M x 72) CMOS Synchronous DRAM Module - ECC General Description The SDC2UV7282-(67/84/100/125)T-S is a high performance, 16 megabtye synchronous, dynamic RAM module organized as

XC 68 HC 58

Abstract: DQ37
Contextual Info: cP July 1996 Revision 1.0 FUJI' DATA SHEET - * SDC2U V6412- 67/84/100/125 T-S 16MByte (2M x 64) CMOS Synchronous DRAM Module General Description The S D C 2U V 6 4 1 2 -(6 7 /8 4 /1 0 0 /1 2 5 )T -S is a high pe rfo rm an ce, 16 m eg ab tye synch ron ous, dyn am ic RAM m odule organ ized as

Contextual Info: cP July 1996 Revision 1.0 FUJI' DATA SHEET - * SDC2U V6482- 67/84/100/125 T-S 16MByte (2M x 64) CMOS Synchronous DRAM Module General Description The S D C 2U V 6 4 8 2 -(6 7 /8 4 /1 0 0 /1 2 5 )T -S is a high pe rfo rm an ce, 16 m eg ab tye synch ron ous, dyn am ic RAM m odule organ ized as

Darlington Transistors

Abstract: CMPTA13 CMPTA14 CMPTA63 CMPTA64 Marking codes marking code "R5" sot23
Contextual Info: CMPTA13 CMPTA63 CMPTA14 NPN CMPTA64 PNP SURFACE MOUNT COMPLEMENTARY SILICON DARLINGTON TRANSISTORS SOT-23 CASE MAXIMUM RATINGS: TA=25 °C Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation

Contextual Info: CMPTA13 CMPTA63 CMPTA14 NPN CMPTA64 PNP w w w. c e n t r a l s e m i . c o m SURFACE MOUNT COMPLEMENTARY SILICON DARLINGTON TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTA13 and CMPTA63 series are complementary silicon darlington transistors manufactured by the epitaxial planar

gp 752

Abstract: marking C2U
Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT UPC8151TB SILICON RFIC LOW CURRENT AMPLIFIER FOR CELLULAR/CORDLESS TELEPHONES FEATURES INSERTION POWER GAIN vs. FREQUENCY AND VOLTAGE • SUPPLY VOLTAGE: Vcc = 2.4 to 3.3 V +20 • LOW CURRENT CONSUMPTION: UPC8151TB; Icc = 4.2 mA TYP @ 3.0 V

Contextual Info: Central TM CMPTA13 CMPTA14 NPN CMPTA63 CMPTA64 PNP Sem i c o n d u c t o r C o r p . SILICON COMPLEMENTARY DARLINGTON TRANSISTORS DESCRIPTION: The C ENTRAL S E M IC O N D U C TO R CMPTA13, CMPTA63 series types are complementary silicon Darlington transistors

MARKING c2p

Contextual Info: PRELIMINARY DATA SHEET SILICON MMIC UPC8128TB LOW CURRENT AMPLIFIERS FOR UPC8151TB CELLULAR/CORDLESS TELEPHONES UPC8152TB FEATURES • SUPPLY VOLTAGE: Vcc = 2.4 to 3.3 V UPC8151TB; ISOL = 38 dB TYP. @ f = 1 GHz UPC8152TB; ISOL = 40 dB TYP. @ f = 1 GHz • LOW CURRENT CONSUMPTION:

Contextual Info: CMPTA13 CMPTA14 NPN CMPTA63 CM PTA64 PNP Central“ SILICON COMPLEMENTARY DARLINGTON TRANSISTORS DESCRIPTION: Sem iconductor Corp. The CENTRAL SEMICONDUCTOR CMPTA13, CMPTA63 series types are complementary silicon Darlington transistors manufactured by the epitaxial planar process,

Contextual Info: PRELIMINARY DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS >PC8128TB, ¡IPC8151TB, PC8152TB SILICON MMIC LOW CURRENT AMPLIFIERS FOR CELLULAR/CORDLESS TELEPHONES DESCRIPTION The ^¡PC8128TB, 8151TB and 8152TB are silicon monolithic integrated circuits designed as buffer amplifiers for

top marking c3

Contextual Info: SILICON RFIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS FEATURES UPC8178TB POWER GAIN vs. FREQUENCY ¥ LOW CURRENT CONSUMPTION ICC = 1.9 mA TYP @ VCC = 3.0 V +20 VCC = 3.0 V 2.4 GHz 1.0 GHz • SUPPLY VOLTAGE: VCC = 2.4 to 3.3 V +10 TA = -40¡C TA = +25¡C

Contextual Info: J CD ta x CD _J CO ACCUMULATIVE) i_ij m :m oo lh o o o (PITCH) o o RECOMMENDED P.C.BOARD HOLE DIMENSION (t= (MOUNTING SIDE) 1.6) (SCALE 4 15 NOTES IS 25,4 4 F a e tx s / ff QTY/CARTON TAPE 2,5 ,25 5 2 =5 25,4 19,9 17,4 14,9 12,4 18,2 5.7 13,2 10,7 E D

BC5468

Abstract: SMD MARKING CODE C1L 8C550 SMD MARKING 5c npn BC5486 bc327 smd BC547 smd C3z SMD MARKING CODE C1G BC840
Contextual Info: SMD TransiStOfS SOT-23 Case U.S. Specification Preferred Series 350mW NEW! NEW! BVa o BVgo (VOITS) (VOLTS) (VOLTS) IcM * V c , (VOLTS) <nA) MM MM MM MAX MM MAX 30 1!i 3.0 10 15 20 75 40 6.0 10 60 100 15 4.5 400 20 40 60 6.0 10 45 250 50 100 60 30 TYPE MO.

DFT301-801

Abstract: DFT301 GRM40CH102J50PT GRM39CH100D50PT GRM39CH080D50PT PC8128TB GRM39CH050C50PT
Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT PC8179TK 3 V SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The PC8179TK is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC can realize low current consumption with external chip inductor which can not be realized on internal 50 

DFT301

Abstract: DFT301-801 grm40ch102j50pt PC8179TK-E2 7R102S50 GRM39CH100D50PT marking code 18 6pin GRM39CH080D50PT PC8178
Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT PC8179TK 3 V SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The PC8179TK is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC can realize low current consumption with external chip inductor which can not be realized on internal 50 

Contextual Info: April 1997 MgL Micro Linear ML4790 Adjustable Output, Low Ripple Boost Regulator GENERAL DESCRIPTION FEATURES The M L4790 is a high efficiency, PFM Pulse Frequency Modulation , boost switching regulator connected in series with an integrated LD O (Low Dropout Regulator)

Contextual Info: September 1995 PRELIM INARY Micro Linear ML4790 Adjustable Output, Low Ripple Boost Regulator GENERAL DESCRIPTION FEATURES The M L4790 is a high efficiency, PFM Pulse Frequency Modulation , boost switching regulator connected in series with an integrated LD O (Low Dropout Regulator)

Contextual Info: PRELIMINARY DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC8178TB SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The µPC8178TB is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC can realize low current consumption with external chip inductor which can not be realized on internal 50 Ω

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC8179TK SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The µPC8179TK is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC can realize low current consumption with external chip inductor which can not be realized on internal 50 Ω

24C02H

Abstract: 24C08K 24C16K 24C04K C02h 24C01WI 24C08 6 c08k C04K 24C01W
Contextual Info: CAT24C01, CAT24C02, CAT24C04, CAT24C08, CAT24C16 1-Kb, 2-Kb, 4-Kb, 8-Kb and 16-Kb I2C CMOS Serial EEPROM http://onsemi.com SOIC−8 W SUFFIX CASE 751BD Description The CAT24C01/02/04/08/16 are 1−Kb, 2−Kb, 4−Kb, 8−Kb and 16−Kb respectively CMOS Serial EEPROM devices organized

marking 6b 6pin

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC8178TK SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The µPC8178TK is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC can realize low current consumption with external chip inductor which can not be realized on internal 50 Ω

24C02WI

Abstract: 24C16K 24C02H FOOTPRINT MO-229 2X3 SOLDERING c16K marking c5a 8 pins CAT24C08 24C02WE 24C08K 24c02w
Contextual Info: CAT24C01, CAT24C02, CAT24C04, CAT24C08, CAT24C16 1-Kb, 2-Kb, 4-Kb, 8-Kb and 16-Kb I2C CMOS Serial EEPROM http://onsemi.com SOIC−8 W SUFFIX CASE 751BD Description The CAT24C01/02/04/08/16 are 1−Kb, 2−Kb, 4−Kb, 8−Kb and 16−Kb respectively CMOS Serial EEPROM devices organized