C2U G Search Results

81117822

Contextual Info: November 1996 Revision 2.0 FUJITSU DATA SHEET - SD C2U V7282 A -(6 7/84/100/125) T-S 16MByte (2M x 72) CMOS Synchronous DRAM Module - ECC General Description The SDC2UV7282(A)-(67/84/100/125)T-S is a high performance, 16-megabtye synchronous, dynamic RAM module organized

Contextual Info: SM-8 DUAL NPN M EDIUM POWER HIGH GAIN TRANSISTORS ZDT694 ISSU E 1 - NOVEM BER 1995_ Oll 1 c r c2Πc2U L .1 _U Bi _U Ei ~ n b2 1 1 E2 SM-8 8 LEAD SOT223 PARTMARKING DETAIL - T694 ABSOLUTE MAXIMUM RATINGS. SY M B O L PARAM ETER VALUE V CBO

C2U SOT-89

Contextual Info: September 1996 Revision 1.0 FUJITSU DATA SH EET - EDC2UV641 1 /4 -(60/70)(J/T)G-S 16MByte (2Mx 64) CMOS EDO DRAM Module -3.3V General Description The EDC2UV641 (1/4)-(60/70)(J/T)G-S is a high performance, EDO (Extended Data Out) 16-megabyte dynamic RAM module

Contextual Info: cP August 1996 Revision 1.0 FUJI' DATA SHEET - * SDC2U V7282- 67/84/100/125 T-S 16MByte (2M x 72) CMOS Synchronous DRAM Module - ECC General Description The SDC2UV7282-(67/84/100/125)T-S is a high performance, 16 megabtye synchronous, dynamic RAM module organized as

XC 68 HC 58

Abstract: DQ37
Contextual Info: cP July 1996 Revision 1.0 FUJI' DATA SHEET - * SDC2U V6412- 67/84/100/125 T-S 16MByte (2M x 64) CMOS Synchronous DRAM Module General Description The S D C 2U V 6 4 1 2 -(6 7 /8 4 /1 0 0 /1 2 5 )T -S is a high pe rfo rm an ce, 16 m eg ab tye synch ron ous, dyn am ic RAM m odule organ ized as

Contextual Info: cP July 1996 Revision 1.0 FUJI' DATA SHEET - * SDC2U V6482- 67/84/100/125 T-S 16MByte (2M x 64) CMOS Synchronous DRAM Module General Description The S D C 2U V 6 4 8 2 -(6 7 /8 4 /1 0 0 /1 2 5 )T -S is a high pe rfo rm an ce, 16 m eg ab tye synch ron ous, dyn am ic RAM m odule organ ized as

Darlington Transistors

Abstract: CMPTA13 CMPTA14 CMPTA63 CMPTA64 Marking codes marking code "R5" sot23
Contextual Info: CMPTA13 CMPTA63 CMPTA14 NPN CMPTA64 PNP SURFACE MOUNT COMPLEMENTARY SILICON DARLINGTON TRANSISTORS SOT-23 CASE MAXIMUM RATINGS: TA=25 °C Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation

C2U SOT-89

Abstract: CMPTA63
Contextual Info: CMPTA13 CMPTA63 Central" CMPTA14 NPN CMPTA64 PNP Semiconductor Corp. SILICON COMPLEMENTARY DARLINGTON TRANSISTORS Description: The CENTRAL SEMICONDUCTOR CMPTA13, CMPTA63 series types are complementary sili­ con darlington transistors manufactured by the epitaxial planar process, epoxy molded in a sur­

darlington sot23 pnp

Abstract: c2u g
Contextual Info: CMPTA13 CMPTA63 Central CMPTA14 NPN CMPTA64 PNP Semiconductor Corp. SILICON COMPLEMENTARY DARLINGTON TRANSISTORS Description: The CENTRAL SEMICONDUCTOR CMPTA13, CMPTA63 series types are complementary sili­ con darlington transistors manufactured by the epitaxial planar process, epoxy molded in a sur­

marking codes transistors sot-23 26

Abstract: sot23 marking C1N marking codes transistors sot-23 "26" Darlington Transistors C2U SOT-89 "Darlington Transistors" CMPTA13 CMPTA14 CMPTA63 CMPTA64
Contextual Info: CMPTA13 CMPTA63 Central CMPTA14 NPN CMPTA64 PNP Semiconductor Corp. SILICON COMPLEMENTARY DARLINGTON TRANSISTORS Description: The CENTRAL SEMICONDUCTOR CMPTA13, CMPTA63 series types are complementary silicon darlington transistors manufactured by the epitaxial planar process, epoxy molded in a

Contextual Info: CMPTA13 CMPTA63 CMPTA14 NPN CMPTA64 PNP w w w. c e n t r a l s e m i . c o m SURFACE MOUNT COMPLEMENTARY SILICON DARLINGTON TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTA13 and CMPTA63 series are complementary silicon darlington transistors manufactured by the epitaxial planar

a6ke

Abstract: a40V c2bl B60V coy 11
Contextual Info: RGB624/RGB624DB 6.0 6 Bit Linear Palette Output The 6 B IT LI N 6 bit linear b it of the Palette Control register affects the form at of RGB color data read from the palettes and presented to the DACs in indirect color mode. It only has effect when th e color resolution is set

gp 752

Abstract: marking C2U
Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT UPC8151TB SILICON RFIC LOW CURRENT AMPLIFIER FOR CELLULAR/CORDLESS TELEPHONES FEATURES INSERTION POWER GAIN vs. FREQUENCY AND VOLTAGE • SUPPLY VOLTAGE: Vcc = 2.4 to 3.3 V +20 • LOW CURRENT CONSUMPTION: UPC8151TB; Icc = 4.2 mA TYP @ 3.0 V

UPC8128TB

Abstract: UPC8151TB UPC8151TB-E3 UPC8152TB SOT-363* marking 1001 gp 823
Contextual Info: SILICON RFIC LOW CURRENT AMPLIFIER FOR UPC8151TB CELLULAR/CORDLESS TELEPHONES FEATURES INSERTION POWER GAIN vs. FREQUENCY AND VOLTAGE • SUPPLY VOLTAGE: Vcc = 2.4 to 3.3 V +20 • LOW CURRENT CONSUMPTION: UPC8151TB; Icc = 4.2 mA TYP @ 3.0 V Tuned at 1 GHz

Contextual Info: Central TM CMPTA13 CMPTA14 NPN CMPTA63 CMPTA64 PNP Sem i c o n d u c t o r C o r p . SILICON COMPLEMENTARY DARLINGTON TRANSISTORS DESCRIPTION: The C ENTRAL S E M IC O N D U C TO R CMPTA13, CMPTA63 series types are complementary silicon Darlington transistors

Switch

Abstract: D2MS D2FC
Contextual Info: To: Whom may concern Date: Feb.21,2013 Certification of Non- inclusion Company name: OMRON SWITCH&DEVICES Corporation Department: Quality&Environment Department Name: Takuya Hirata Title: General Manager Signature: We hereby certify that to the best of Omron’s knowledge, our products and components below

UPC8128TB

Abstract: UPC8151TB UPC8151TB-E3-A UPC8152TB
Contextual Info: SILICON RFIC LOW CURRENT AMPLIFIER FOR UPC8151TB CELLULAR/CORDLESS TELEPHONES FEATURES INSERTION POWER GAIN vs. FREQUENCY AND VOLTAGE • SUPPLY VOLTAGE: Vcc = 2.4 to 3.3 V +20 • LOW CURRENT CONSUMPTION: UPC8151TB; Icc = 4.2 mA TYP @ 3.0 V Tuned at 1 GHz

Contextual Info: Central CM PTA13 CM PTA14 NPN CM PTA63 CM PTA64 PNP Semiconductor Corp. SILICON COMPLEMENTARY DARLINGTON TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTA13, CMPTA63 series types are complementary silicon Darlington transistors manufactured by the epitaxial planar process,

sot23 marking C1N

Contextual Info: Central CMPTA13 CMPTA14 NPN CMPTA63 CMPTA64 PNP TM Semiconductor Corp. SILICON COMPLEMENTARY DARLINGTON TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTA13, CMPTA63 series types are complementary silicon Darlington transistors manufactured by the epitaxial planar process,

MARKING c2p

Contextual Info: PRELIMINARY DATA SHEET SILICON MMIC UPC8128TB LOW CURRENT AMPLIFIERS FOR UPC8151TB CELLULAR/CORDLESS TELEPHONES UPC8152TB FEATURES • SUPPLY VOLTAGE: Vcc = 2.4 to 3.3 V UPC8151TB; ISOL = 38 dB TYP. @ f = 1 GHz UPC8152TB; ISOL = 40 dB TYP. @ f = 1 GHz • LOW CURRENT CONSUMPTION:

S2506

Abstract: PS2506
Contextual Info: HIGH ISOLATION VOLTAGE AC INPUT, DARLINGTON TRANSISTOR TYPE MULTI OPTOCOUPLER SERIES PS2506-1, -2, -4 PS2506L-1, -2, -4 FEATURES DESCRIPTION • HIGH ISOLATION VOLTAGE BV: 5 k Vr.m.s. MIN PS2506-1, -2 and -4 and PS2506L-1, -2 and -4 are optically coupled isolators containing a GaAs light emitting diode and

Contextual Info: CMPTA13 CMPTA14 NPN CMPTA63 CM PTA64 PNP Central“ SILICON COMPLEMENTARY DARLINGTON TRANSISTORS DESCRIPTION: Sem iconductor Corp. The CENTRAL SEMICONDUCTOR CMPTA13, CMPTA63 series types are complementary silicon Darlington transistors manufactured by the epitaxial planar process,

Contextual Info: PRELIMINARY DATA SHEET SILICON MMIC UPC8128TB LOW CURRENT AMPLIFIERS FOR UPC8151TB CELLULAR/CORDLESS TELEPHONES UPC8152TB FEATURES • SUPPLY VOLTAGE: Vcc = 2.4 to 3.3 V • LOW CURRENT UPC8128TB; Icc UPC8151TB; Icc UPC8152TB; Icc • • UPC8151TB; ISOL = 38 dB TYP. @ f = 1 GHz

SILICON COMPLEMENTARY transistors darlington

Abstract: "Darlington Transistors" complementary darlington CMPTA13 CMPTA14 CMPTA63 CMPTA64 sot23 marking C1N
Contextual Info: C M P TA 13 C M P T A 14 NPN C M P T A 63 C M P T A 64 PNP Central SILICON COMPLEMENTARY DARLINGTON TRANSISTORS DESCRIPTION: Sem iconductor Corp. The C EN TR AL S E M IC O N D U C TO R CMPTA13, CM PTA63 series types are complementary silicon Darlington transistors