C17M Search Results

Z1213

Abstract: CY7C132 CY7C136 CY7C146 zl12
Contextual Info: bSE » CYPRESS SEMICONDUCTOR SSÖ'lbbE 0 0 0 ^ 7 4 7 ISb I CYP CY7C132/CY7C136 CY7C142/CY7C146 CYPRESS SEMICONDUCTOR 2K x 8 Dual-Port Static RAM output enable OE . BUSY flags are pro­ vided on each port. In addition, an interrupt Functional Description Features

lt 5234

Abstract: Tip640 IP645 DEJJ
Contextual Info: TEXAS INSTR - COPTO} 8961726 TE XAS ^ 2 De | fl=ìfc:175t, 0D3bT7D INSTR COPTO D 62C 3 6 97 0 TIP640, TIP641, TIP642 N-P-N DARLINGTON-CONIMECTED SILICON POWER TRANSISTORS REVISED OCTOBER 1984 • Designed For Complementary use with T IP645, TIP646, TIP647

C38M

Abstract: c39m c25m S C38M 96 c20m 08 c20m 08 C25M diode C46M c20m C25M DIODES
Contextual Info: 8 7 5 6 4 1 2 3 REVISIONS REV. ECO. NO DESCRIPTION DATE A 1600 INITIAL RELEASE 2/5/2008 BY VJ B 1619 DEFINE AVAIL N-MOUNT POS, ADD CC DIM 2/28/2008 ASK F F D C B A 2X .125 3.18 E E .370 9.40 .025 0.64 DEPTH FROM TOP OF INSULATOR TO TOP OF PIN FITS EDGECARDS THAT

c39m

Abstract: C38M C25M C51M C25M diode C47M C45M eco 3393 C06M 40 12 50 c20m 08
Contextual Info: 8 7 4 5 6 1 2 3 REVISIONS REV. ECO. NO DESCRIPTION DATE A 1600 INITIAL RELEASE 2/5/2008 BY VJ B 1619 DEFINE AVAIL. N-MOUNT POS. , ADD CC DIM 2/28/2008 ASK F F 2X D C B A .125 3.18 E E .370 9.40 .025 0.64 DEPTH FROM TOP OF INSULATOR TO TOP OF PIN D FITS EDGECARDS THAT

Contextual Info: MITSUBISHI LS Is M5M5179AP,J,FP-20,-25, -20L-25L 73728-BIT 8192-WORD BY 9-BIT CMOS STATIC RAM DESCRIPTION This is a fam ily o f 8 1 9 2 -w o rd by 9 -b it static RAM s, PIN CONFIGURATION (TOP VIEW) •fabricated w ith the high-performance CMOS silicon-gate MOS

Contextual Info: [Z J SG S -TH O M SO N MC3303 MC3403 - MC3503 LOW POWER QUAD BIPOLAR OPERATIONAL AMPLIFIERS • SHORT-CIRCUIT PROTECTED OUTPUTS . CLASS AB OUTPUT STAGE FOR MINIMAL CROSSOVER DISTORTION ■ SINGLE SUPPLY OPERATION : + 3VTO +36V ■ DUAL SUPPLIES : ±1.5V TO ±18V

c39m

Abstract: C38M c25m C25M diode c20m c20m 08 diode C20M C06M 40 12 50 C17M C25M DIODES
Contextual Info: 8 7 4 5 6 1 2 3 REVISIONS REV. ECO. NO DESCRIPTION DATE A 1600 INITIAL RELEASE 2/5/2008 BY VJ B 1619 DEFINE AVAIL N-MOUNT POS, ADD CC DIM 2/28/2008 ASK F F 2X D C B A .125 3.18 E E .370 9.40 .025 0.64 DEPTH FROM TOP OF INSULATOR TO TOP OF PIN D FITS EDGECARDS THAT

Contextual Info: MICRO PO WE R S Y S T E M S INC blE D bO'mMH D G G 5 M M 5 bll * M P S -T K Sl-\< Z > -l< D MP8799 DIE ML Monolithic Very Low Power 10-Bit Analog-to-Digital Converter C M O S Die Specifications Micro Power Systems ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings TA = 25°C

HA1120

Abstract: 1n9448 1NS471A diodo 216 diodo 2B 1n6449a IN5144 G702A S01718 DIODO 10 W
Contextual Info: D & IS D elect HERM ETICALLY S EA LED G L A S S P A C K A G E D TU N IN G D IO D ES A B R U PT - H Y PER A B R U P T Ul E L E C T R IC A L CH A RACTERISTICS <Ta = 25» C unless otherwise noted 6ENERAL APPLICATIONS Otode Cap. CT)* ÌT1ON04V/1 MHz TYPE Pf

Contextual Info: NM 24C03/C05/C09/C17 2K -/4K -/8K -/16K -B it Serial EEPROM with Write Protect l2C Synchronous 2-Wire Bus General Description Features The NM24C03/C05/C09/C17 devices are 2048/4096/ 8192/16,834 bits, respectively, of CMOS non-volatile elec­ trically erasable memory. These devices conform to all

M74HC377

Contextual Info: r z 7 S G S -T H O M S O N È M54HC377 M74HC377 OCTAL D TYPE FLIP FLOP • HIGH SPEED fm a x = 73 MHz TYP. a t V c c = 5 V ■ LOW POWER DISSIPATION Icc = 4 nA (MAX.) at 25 °C . HIGH NOISE IMMUNITY V nih = V nil = 28 % Vcc (MIN.) ■ OUTPUT DRIVE CAPABILITY

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 8-Bit Scannable Register The MC10E/100E241 is an 8 -bit shiftable register. Unlike a standard universal shift register such as the E141, the E241 features internal data feedback organized so that the SHIFT control overrides the HOLD/LOAD

Contextual Info: Regulator ICs Regulator ICs 4-channel switching regulator BA9707KV The BA9707KV, a 4-channel sw itching regulator that uses a pulse w idth m odulation PWM system, can drive all ch PNP transistors directly. •A p p lic a tio n s VCRs and other portable equipm ent

C17UL

Abstract: C06UL transistor smd code marking 102 C17AH101k transistor smd code marking 431 431 SMD CODE MARKING P62BN820MA2636 C08 SMD MARKING CODE solder wire HMP C06CF
Contextual Info: Company Overview Dielectric Laboratories, Inc. DLI is your global partner for application specific microwave and millimeter wave components serving customers in fiber optic, wireless, medical, transportation, semiconductor, space, avionics and military markets. With over 35 years of experience, you can turn to DLI with confidence for your

philips pin diode

Abstract: B2B diode philips Schottky diode Philips diode BAT56 Diode, Schottky, SOD123
Contextual Info: N AMER P H I L I P S / D I S C R E T E bTE Philips Semiconductors bbSBTBl □02b'i?3 • Low leakage current • Low turn-on and high breakdown voltage • Ultra-fast switching speed. I APX Preliminary specification Schottky barrier diode FEA TU RES b2b BAT56

24C03

Abstract: 24c05 M24C09
Contextual Info: NM24C03/C05/C09/C17 EH National Semiconductor N M 24C 03/C 05/C 09/C 17 2 K -/4 K -/8 K -/16K-Bit SeriaJ EEPROM with Write Protect l2C Synchronous 2-Wire Bus General Description Features The N M 24C03/C05/C09/C17 devices are 2048/4096/ 8192/16,834 bits, respectively, of CMOS non-volatile elec­