C16A50 Search Results
C16A50 Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| C16A50Z4 | Anaren | Surface Mount Termination 16 Watts, 50 Ohm | Original | 319.75KB | 2 |
C16A50 Price and Stock
NIDEC Components REC16A50-201-D- Bulk (Alt: REC16A50-201-D) |
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REC16A50-201-D | Bulk | 15 Weeks | 1,000 |
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NIDEC Components REC16A50-201-C- Boxed Product (Development Kits) (Alt: REC16A50-201-C) |
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REC16A50-201-C | Box | 15 Weeks | 20 |
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REC16A50-201-C | Bulk | 14 | 1 |
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REC16A50-201-C | Bulk | 20 |
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NIDEC Components REC16A50-201- Boxed Product (Development Kits) (Alt: REC16A50-201) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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REC16A50-201 | Box | 15 Weeks | 20 |
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REC16A50-201 | Bulk | 20 |
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Phoenix Contact 1623510 (EV-GBG3K-1AC16A-5,0M2,5ESBK01)EV-GBG3K-1AC16A-5,0M2,5ESBK01, EV CHARGING CABLES |
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1623510 (EV-GBG3K-1AC16A-5,0M2,5ESBK01) | Bulk | 1 |
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Phoenix Contact 1623512 (EV-GBG3K-3AC16A-5,0M2,5ESBK01)EV-GBG3K-3AC16A-5,0M2,5ESBK01, EV CHARGING CABLES |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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1623512 (EV-GBG3K-3AC16A-5,0M2,5ESBK01) | Bulk | 1 |
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C16A50 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: Model C16A50Z4 Surface Mount Termination 16 Watts, 50Ω Description Features: • RoHS Compliant • 16 Watts • DC – 4.0 GHz • Al2O3 Ceramic • Non-Nichrome Resistive Element • Low Return Loss • 100% Tested • Small Size The C16A50Z4 is high performance Alumina Al2O3 surface mount |
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c16a50z4 | |
C16A50Z4Contextual Info: RoHS Compliant Model C16A50Z4 Surface Mount Termination 16 Watts, 50Ω Description The C16A50Z4 is high performance Alumina Al203 surface mount termination intended as a low cost alternative to Aluminum Oxide (AlN). The termination is well suited to all cellular frequency bands such as; |
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c16a50z4al203 | |
X3C26P1-30S
Abstract: RFP- C16A50Z4 v-tek 2500 C50A50Z4 RF Directional Couplers data sheet RF35 RO4003 RO4350 X3C26P1-30
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x3c26p1-30srf-35ro4003rfp- c16a50z4+6 | |
RF35
Abstract: RO4003 RO4350 PCB Rogers RO4003 C50A50Z4
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x3c19e2-20x3c19e2-20srf35ro4003+3 | |
hybrid coupler 3dB 180
Abstract: X3C09P1-03S hybrid coupler hybrid coupler 3dB 90 3DB coupler 180 3dB coupler 180 degree 3dB coupler 210F RF35 RO4003
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x3c09p1-03sg-10tieshybrid coupler 3db 180hybrid coupler+7 | |
hybrid coupler 3dB 180
Abstract: X3C21P1-03S 180 degree 3dB coupler hybrid 180 couplers hybrid coupler X3C21P1 210F RF35 RO4003 180 Degree hybrid Xinger
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x3c21p1-03srf-35hybrid coupler 3db 180180 degree 3db coupler+7 | |
hybrid coupler 3dB 180
Abstract: 210F RF35 RO4003
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Original |
x3c19p2-03shybrid coupler 3db 180210frf35+1 | |
hybrid coupler 3dB 180
Abstract: 180 degree 3dB coupler RF35 RO4003
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Original |
x3c07p1-03sus700rf-35hybrid coupler 3db 180+3 | |
180 Degree hybrid Xinger
Abstract: hybrid coupler 3dB 180 hybrid 180 couplers X3C21P1-03S PCB Rogers RO4003 substrate datasheet 210F RF35 RO4003
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x3c21p1-03srf-35180 degree hybrid xingerhybrid coupler 3db 180+5 | |
hybrid coupler 3dB 180
Abstract: combiner THEORY 180 Degree hybrid Xinger 180 degree 3dB coupler hybrid coupler RF Coupler 3dB X3C19P1-03S 210F RF35 RO4003
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x3c19p1-03shybrid coupler 3db 180combiner theory180 degree hybrid xinger+6 | |
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Contextual Info: PTAC210802FC Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 2110 – 2170 MHz Description The PTAC210802FC is an 80-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power ampliier applications in the 2110 to 2170 MHz frequency band. Features |
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ptac210802fc80-watth-37248-4c21080us | |
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Contextual Info: PXAC260602FC Thermally-Enhanced High Power RF LDMOS FET 60 W, P3dB @ 28 V, 2620 – 2690 MHz Description The PXAC260602FC is a 60-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2620 to 2690 MHz frequency band. Features |
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pxac260602fc60-watth-37248-4 | |
2.4ghz lnb
Abstract: 1M710S 1G1304-30 XC0900A-03S xc1900a-03s BD2425J50100A00 3A425 B0011E75300A00 diplexer gsm umts 900 stripline power combiner splitter
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xc0450a-03xc0450l-03xc0450e-031f1304-3+16 | |
RF35
Abstract: RO4003 ro4003 rogers microstrip Rogers RO4003 varactor 650 manual
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x3c07p1-03sus700rf-35rf35+4 | |
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varactor 650 manual
Abstract: X3C06A4-03S variable phase shifter 100 Mhz Model 430 X3C19 180 degree 3dB coupler 180 Degree hybrid Xinger
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x3c06a4-03s450mhzrf-35ro4003+6 | |
3db couplers
Abstract: v-tek 210F RF35 RO4003 X3C25P1-05S
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x3c25p1-05s3db couplersv-tek210f+2 | |
X3C21P1
Abstract: 210F RF35 RO4003 X3C21P1-05S X3C21P1-05
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Original |
x3c21p1-05sx3c21p1210frf35+2 | |
Anaren rfp
Abstract: RF35 RO4003 RO4350 XC09E2-20S
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x3c09e2-20x3c09e2-20srf-35ro4003+4 | |
hybrid coupler 3dB 180
Abstract: RF35 RO4003 RO4350
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x3c09p2-30srf-35ro4003hybrid coupler 3db 180+2 | |
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Contextual Info: PXAC201602FC Thermally-Enhanced High Power RF LDMOS FET 140 W, 28 V, 1880 – 1920 MHz, 2010 – 2025 MHz Description The PXAC201602FC is a 140-watt LDMOS FET for use in multistandard cellular power amplifier applications in the 1880 to 1920 MHz and 2010 to 2025 MHz frequency bands. Its asymmetric and dual-path |
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pxac201602fc140-watth-37248-410ubstances | |
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Contextual Info: PXAC201202FC Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 – 2200 MHz Description The PXAC201202FC is a 120-watt LDMOS FET for use in multistandard cellular power amplifier applications in the 1800 to 2200 MHz frequency band. Its asymmetric and dual-path design make it ideal for |
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pxac201202fc120-watth-37248-4pxac201202fc-gr1a | |
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Contextual Info: PXAC261002FC Thermally-Enhanced High Power RF LDMOS FET 100 W, 28 V, 2496 – 2690 MHz Description The PXAC261002FC is a 100-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2496 to 2690 MHz frequency band. Features |
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pxac261002fc100-watt | |
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Contextual Info: PXAC260602FC Thermally-Enhanced High Power RF LDMOS FET 60 W, P3dB @ 28 V, 2620 – 2690 MHz Description The PXAC260602FC is a 60-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2620 to 2690 MHz frequency band. Features |
Original |
pxac260602fc60-watth-37248-4 | |
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Contextual Info: PTAB182002TC Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 1805 – 1880 MHz Description The PTAB182002TC is a 180-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output |
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ptab182002tc180-watth-49248h-4 | |