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    PXAC201202FC Search Results

    PXAC201202FC Datasheets (6)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    PXAC201202FC-V2
    Cree/Wolfspeed Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS Original PDF 430.56KB
    PXAC201202FC-V2-R0
    Cree/Wolfspeed Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS H-37248-4 Original PDF 430.56KB
    PXAC201202FCV2R0XTMA1
    Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS H-37248-4 Original PDF 430.4KB
    PXAC201202FC-V2-R250
    Cree/Wolfspeed Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS Original PDF 430.56KB
    PXAC201202FCV2R250XTMA1
    Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS Original PDF 434.85KB
    PXAC201202FCV2XWSA1
    Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS Original PDF 434.85KB

    PXAC201202FC Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    J499

    Contextual Info: PXAC201202FC Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 – 2200 MHz Description The PXAC201202FC is a 120-watt LDMOS FET for use in multistandard cellular power amplifier applications in the 1800 to 2200 MHz frequency band. Its asymmetric and dual-path design make it ideal for


    Original
    pxac201202fc120-watth-37248-428ances+1j499 PDF

    Contextual Info: PXAC201202FC Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 – 2200 MHz Description The PXAC201202FC is a 120-watt LDMOS FET for use in multistandard cellular power amplifier applications in the 1800 to 2200 MHz frequency band. Its asymmetric and dual-path design make it ideal for


    Original
    pxac201202fc120-watth-37248-4pxac201202fc-gr1a PDF

    Contextual Info: PXAC201202FC Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 – 2200 MHz Description The PXAC201202FC is a 120-watt LDMOS FET for use in multistandard cellular power amplifier applications in the 1800 to 2200 MHz


    Original
    pxac201202fc120-watth-37248-4 PDF

    PTFB090901EA

    Contextual Info: RF Power Product Selection Guide LDMOS Transistors and ICs www.infineon.com/rfpower RF Power Product Selection Guide New Products PTVA093002TC n 703–960MHz n Dual Path Design n Typical RF Characteristics Doherty, 758MHz – POUT = 63W avg – Gain = 17.5dB


    Original
    ptva093002tc960mhz758mhzpxac201602fc+62025mhzh-49248h-4h-37248-4400mhz2700mhzptfb090901ea PDF