PXAC201202FC Search Results
PXAC201202FC Datasheets (6)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| PXAC201202FC-V2 | Cree/Wolfspeed | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS | Original | 430.56KB | |||
| PXAC201202FC-V2-R0 | Cree/Wolfspeed | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS H-37248-4 | Original | 430.56KB | |||
| PXAC201202FCV2R0XTMA1 | Infineon Technologies | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS H-37248-4 | Original | 430.4KB | |||
| PXAC201202FC-V2-R250 | Cree/Wolfspeed | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS | Original | 430.56KB | |||
| PXAC201202FCV2R250XTMA1 | Infineon Technologies | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS | Original | 434.85KB | |||
| PXAC201202FCV2XWSA1 | Infineon Technologies | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS | Original | 434.85KB |
PXAC201202FC Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
J499Contextual Info: PXAC201202FC Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 – 2200 MHz Description The PXAC201202FC is a 120-watt LDMOS FET for use in multistandard cellular power amplifier applications in the 1800 to 2200 MHz frequency band. Its asymmetric and dual-path design make it ideal for |
Original |
pxac201202fc120-watth-37248-428ances+1 | |
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Contextual Info: PXAC201202FC Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 – 2200 MHz Description The PXAC201202FC is a 120-watt LDMOS FET for use in multistandard cellular power amplifier applications in the 1800 to 2200 MHz frequency band. Its asymmetric and dual-path design make it ideal for |
Original |
pxac201202fc120-watth-37248-4pxac201202fc-gr1a | |
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Contextual Info: PXAC201202FC Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 – 2200 MHz Description The PXAC201202FC is a 120-watt LDMOS FET for use in multistandard cellular power amplifier applications in the 1800 to 2200 MHz |
Original |
pxac201202fc120-watth-37248-4 | |
PTFB090901EAContextual Info: RF Power Product Selection Guide LDMOS Transistors and ICs www.infineon.com/rfpower RF Power Product Selection Guide New Products PTVA093002TC n 703–960MHz n Dual Path Design n Typical RF Characteristics Doherty, 758MHz – POUT = 63W avg – Gain = 17.5dB |
Original |
ptva093002tc960mhz758mhzpxac201602fc+6 |