C12 IC GATE Search Results

MTD3302

Abstract: CS5323 SC1205 D518 VCC74 0.01U 74 c23
Contextual Info: 19 13 L1 300N C13 540U 33 34 RCORE 1K X_U1 SC1205 DRN Gate1 R1 10 V5IN Resr1 1.5M X_Q1 MTD3302 Resr0 0.04 14 V12IN 22 C4 1.0U D1 C5 1.0U V_BUS 19 44 1 1 PGND TG BST BG VS CO EN 23 L2 850N Vcc 15 COMP 4 4 R10 8K C11 2N R6 7.5K C14 0.1U IC = 2.2 5 Gate2 ROSC

TRANSISTOR 58050

Abstract: 3 pin TRANSISTOR 58050 58050 3 pin transistor 58050 transistor byv 32 diode BYV 88 800 ByV schottky L4985 L4985D SO20
Contextual Info: L4985 HIGH EFFICIENCY SWITCHING REGULATOR PRODUCT PREVIEW OPERATING INPUT VOLTAGE: FROM 4.5V TO 21V HIGHEFFICIENCY 3A STEP DOWN CONVERTER 3A @ 3.3V OUTPUT VOLTAGE FROM 4.5V INPUT VOLTAGE ADJUSTABLE OUTPUT VOLTAGE FROM 1.28V GATE DRIVER FOR SYNCHRONOUS RECTIFICATION

laser diode spice model simulation

Abstract: Gigabit Logic
Contextual Info: TEKTRONIX INC/ TRI 2UINT 2bE 1 Bl ÖTObHlfl DDÜGSQ7 7 HITRÛ ' T - q ’i - l S [(È lB ÏL J G ig a B it L o g ic 16G020 Programmable Single Gate GaAs D-MESFET Array FEATURES • 11 single gate depletion MESFETs on each chip • f t = 22 GHz typical frequency response

Contextual Info: TEKTRONIX INC/ TRI ÛUINT 2bE D B Ô^GbSlû G O D D S n 3 O T R Ö [ È S S I] G ig a B it L o g ic 16G021 Programmable Dual Gate GaAs D-MESFET Array FEATURES • • • • • • >Available with personalized interconnects in the package for design integration and improved

Hitachi DSA002779

Abstract: 2SK410
Contextual Info: 2SK410 Silicon N-Channel MOS FET Application HF/VHF power amplifier Features • • • • • • • High breakdown voltage You can decrease handling current. Included gate protection diode No secondary–breakdown Wide area of safe operation Simple bias circuitry

DIODE GOC 63

Abstract: g85 wafer diode S334 db3 x044 s217 diode dB06 diode TFT 65K colors 128 x 160 pixels diode s199 s394 54175
Contextual Info: ST Sitronix ST7712 262K Color Single-Chip TFT Controller/Driver 1. Introduction The ST7712 is a single-chip which generates 396 Source lines and 132 gate lines controller/driver for 262K color TFT dot graphic display. ST7712 support 18-bit high-speed bus interface and Serial Peripheral Interface SPI , thus it can perform

HD66775

Contextual Info: —PRELIMINARY— HD66775 120-Channel Gate Driver for Color-TFT Liquid Crystal Displays Rev.0.3 September 2001 Description HD66775 is a gate-driver IC for systems with color-TFT-liquid-crystal dot-matrix graphic displays. It incorporates a circuit for driving 120 channels of TFT gate lines, and realizes the liquid crystal

Contextual Info: SAMSUNG SEMICO ND UCTOR INC 02 D E « 7 ^ 4 1 4 5 DDDSbSfl 3 I 558 KS5113 D ; CMOS DIGITAL INTEGRATED CIRCUIT 3 HAND LCD ANALOG WATCH The KS5113 Is asilicon-gate CMOS LSI for 3-HAND analog LCD display watch. It provides three functions HOUR, MINUTE, SECOND .

PRTR5VOU4D

Abstract: loop powered galvanic isolator "Digital Comparators" 106V ltc6802 LTC6802-1 P0544NL transistor npn 500v LTC6801 NC7WZ17
Contextual Info: LTC6801 Independent Multicell Battery Stack Fault Monitor Features Description n n n The LTC 6801 is a multicell battery monitoring IC incorporating a 12-bit ADC, a precision voltage reference, sampled comparator, and a high voltage input multiplexer. The LTC6801 can monitor as many as 12 series connected battery cells for overvoltage, undervoltage, and

LTC6801G

Abstract: PRTR5VOU4D 106V CMHD457 P0544NL LTC6802-1 LT6003 LTC6801 LTC6802 LTC6802-2
Contextual Info: LTC6801 Independent Multicell Battery Stack Fault Monitor FEATURES DESCRIPTION n The LTC 6801 is a multicell battery monitoring IC incorporating a 12-bit ADC, a precision voltage reference, sampled comparator, and a high voltage input multiplexer. The LTC6801 can monitor as many as 12 series connected battery cells for overvoltage, undervoltage, and

LTC6801G

Abstract: LTC6802-2 LT6003 LTC6801 LTC6802 zener diode ltc 4211 G13 LTC6802-1
Contextual Info: LTC6801 Independent Multicell Battery Stack Fault Monitor FEATURES DESCRIPTION n The LTC 6801 is a multicell battery monitoring IC incorporating a 12-bit ADC, a precision voltage reference, sampled comparator, and a high voltage input multiplexer. The LTC6801 can monitor as many as 12 series connected battery cells for overvoltage, undervoltage, and

LTC6802-2

Abstract: LTC6802-1
Contextual Info: LTC6801 Independent Multicell Battery Stack Fault Monitor FEATURES n n n n n n n n n n n n DESCRIPTION Monitors Up to 12 Li-Ion Cells in Series 60V Max Stackable Architecture Enables > 1000V Systems 1% Maximum Overvoltage Detection Level Error Adjustable Overvoltage and Undervoltage

180uf 200 v capacitor

Abstract: ADP1821 CRCW06033001F 680uF 4v IRFR3711Z M200 MMBT2222 20SP180M BAT54 BZX84C5V6
Contextual Info: Evaluation Board for 20 A Step-Down DC-to-DC Controller EVAL-ADP1821 clock at any frequency between 300 kHz and 1.2 MHz. The internal gate drivers control an all N-channel power stage to regulate a converter output voltage as low as 0.6 V with up to 20 A load current.

dv4 mosfets

Abstract: C12 IC GATE CA3240E DEPLETION MOSFET Harris Semiconductor jfet mos die mosfet cross reference n channel depletion MOSFET 2N4036 AN7254
Contextual Info: Harris Semiconductor No. AN7254.2 Harris Power MOSFETs April 1994 Switching Waveforms Of The L2FET: A 5 Volt Gate-Drive Power MOSFET Author: C. Frank Wheatley, Jr. and Harold R. Ronan, Jr. gate sensitivity, as shown in Figures 1, 2, and 3, which are comparisons of the industry standard RFM10N15 with its

AN-556

Abstract: AN556 application note 100uf25v scr power control schematic TN197 L6353 BRIDGE-RECTIFIER 8a IGBT DRIVER SCHEMATIC chip SCR Inverter datasheet 4N25
Contextual Info: AN556 APPLICATION NOTE THE L6353: A SMART GATE DRIVER by: C. Adragna and G. Comandatore The superior performance of voltage controlled switch makes this device the preferred one in modern power electronics applications. The L6353 is a new monolithic integrated circuit designed to realise a versatile and smart interface

transistor E101

Abstract: transistor c32
Contextual Info: MPT57216 192-CHANNEL COLOR TFT COLUMN SOURCE DRIVER SGLS092 – MARCH 1997 192 OUT0 OUT3 OUT13 OUT181 OUT183 OUT189 D D D D Clock-Control Circuit Conserves Power Consumption Power Supply Voltage of 5 V ±10% High-Voltage CMOS SI Gate Technology 231-Pin TAB (Tape Automated Bonding)

Contextual Info: TOSHIBA MOS MEMORY PRODUCTS TMM411001C-10 TMM411001C-12 1 ,0 48 ,5 7 6 WORD X 1 BIT DYNAMIC RAM SILICO N MONOLITHIC N -C H A N N EL SILICO N GATE MOS PRELIMINARY DESCRIPTION bit densities and is co m p a tib le w ith w id e ly available a u to m ated te stin g and inse rtio n e q u ip m e n t. System

SMD 47UF/SN74AHC138

Contextual Info: Application Note 1826 Author: Richard Kroeger ISL9520EVAL1Z Evaluation Board Setup Procedure The ISL9520 is a highly integrated Narrow VDC regulator/battery charger controller for Li-ion/Li-ion polymer batteries. It has an SMBus interface and provides gate drive to

AN-7501

Abstract: CA3240E dv4 mosfets CA3280 RFM10N15 RFM10N15L RFM15N15 2N4036 P-channel 200V mos fet ca3240
Contextual Info: Switching Waveforms Of The L2FET: A 5 Volt Gate-Drive Power MOSFET Application Note eyrds terrpoon er ) OCI O frk geode setes VG = 9(4.5)V DRAIN CURRENT (ID) (A) bt witc g vems The FET 5 lt teve wer OST) utho The reduction in gate drive voltage is the result of halving the

100 amp 1000 volt GTO

Abstract: AN-7501 CA3280 vertical JFET p channel depletion mosfet 2N4036 AN75 CA3240E RFM10N15 RFM10N15L
Contextual Info: Switching Waveforms Of The L2FET: A 5 Volt Gate-Drive Power MOSFET Application Note Pageode Useutines DRAIN CURRENT ID (A) VG = 9(4.5)V The reduction in gate drive voltage is the result of halving the thickness of the gate insulator from the industry standard

Diode KD 514

Abstract: D05022P-473 LM2670 LM2670S-12 LM2670S-ADJ 332C2 Yl38 yl-38 D05022P-683
Contextual Info: & Semiconductor LM2670 SIMPLE SWITCHER High Efficiency 3A Step-Down Voltage Regulator with Sync General Description Features The LM 2670 series of regulators are m onolithic integrated circuits which provide all of the active functions fo r a step-dow n buck sw itching regulator capable of driving up to

C18 ph zener

Abstract: LM26761 2676T-5 2676T-3 2676T-12 2676T-1
Contextual Info: tß Semiconductor S IM P LE S W IT C H E R High E ffic ie n c y 3A S te p -D o w n SIMPLE LM 2 6 7 6 LM2676 May 1998 National Voltage R eg u la to r The SIMPLE SWITCHER concept provides tor a complete design using a minimum number ol external components. A

RJ102

Abstract: HA16163T Nihon Inter Electronics CHIP DIODE m7 NIHON PULSE rj101 rohm M7 RJ105 diode m7 toshiba HAT2175H
Contextual Info: HA16163T DC-DC Converter Evaluation Board HA16163 EVB2.0 480 kHz, 48 V, 3.3 V, 100 W Isolated power supply Application Note REJ05F0002-0100Z (Previous: ADE-504-008(Z) Rev.1.00 Apr.22.2003 Renesas Technology Corp. Cautions Keep safety first in your circuit designs!

1dq04

Abstract: 2073S lm2073
Contextual Info: S IM P L E S W IT C H E R 3A S te p -D o w n Voltage R e g u la to r SIMPLE LM 2 6 7 3 LM2673 t? May 1998 National Semiconductor wi th A d j u s t a b l e C u r r e n t L i m i t • Efficiency up to 94% ■ Simple and easy to design with using off-the-shelt