G111 Search Results

G111K

Contextual Info: Pb Free Plating Product ISSUED DATE :2005/04/27 REVISED DATE :2005/07/14B G 111 K N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS ON ID 55V 2 640mA Description The G111K utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely

Contextual Info: Power LED I TECHNICAL DATA W11191, W11192 N11191, N11192 D11191, D11192 B11191, B11192 G11191, G11192 R11191, R11192 C11191, C11192 A11191, A11192 SEOUL SEMICONDUCTOR CO., LTD. 148-29, Kasan-Dong, Keumchun-Gu, Seoul, Korea TEL : 82-2-3281-6269 FAX : 82-2-857-5430

Contextual Info: Power LED I TECHNICAL DATA W11191, W11192 N11191, N11192 B11191, B11192 G11191, G11192 R11191, R11192 C11191, C11192 SEOUL SEMICONDUCTOR CO., LTD. 148-29, Kasan-Dong, Keumchun-Gu, Seoul, Korea TEL : 82-2-3281-6269 FAX : 82-2-857-5430 Rev05 – 2005/09 1 SPECIFICATIONS

Contextual Info: Copyrightⓒ 2003 Seoul Semiconductor Co.,Ltd. All right reserved. Power LED I TECHNICAL DATA W11190 B11190 G11190 R11190 C11190 A11190 2004.10.13 Rev 4 SEOUL SEMICONDUCTOR CO., LTD. 148-29, Kasan-Dong, Keumchun-Gu, Seoul, Korea TEL : 82-2-3281-6269 FAX : 82-2-857-5430

Contextual Info: InGaAs linear image sensors G11135-256DD, G11135-512DE Single video line 256/512 pixels near infrared image sensor (0.95 to 1.7 m) The G11135 series InGaAs linear image sensors designed for foreign object inspection equipment. These linear image sensors

8YV27-200

Abstract: VR300 FEP16GT UFS400 FES16CT FES16DT FES16FT FES16GT FEP30HP/45 FE5B
Contextual Info: LOW CURRENT AXIAL FAST EFFICIENT RECTIFIERS FE1A thru FE1D GI1001 thru GI1004 FE2A thru FE2D BYV27-50 thru BYV27-200 G/1tOI thru G11104 DO-2MAP D0-204AP DO-240AP D0-204AP D0204AP G4 G4 G4 G4 G4 1 1 2 2 2.5 3.0 3.5 5.0 6.0 6.0 VR-50 V FE1A GH 001 FE2A BYV27-50

G1120

Abstract: G1115 G1116 Hamamatsu G1118 G1117 G1118 G2711-01 G3067
Contextual Info: PHOTODIODE GaAsPフォトダイオード 拡散型 可視域用フォトダイオード 特長 用途 l 低暗電流 l 高安定性 l 分析機器 l 色識別 • 一般定格／絶対最大定格 型名 G1115 G1116 G1117 G1118 G1120 G3067 G2711-01 外形

G1117A

Contextual Info: ISSUED DATE :2006/06/06 REVISED DATE : G 111 7 A 1A Low Dropout Positive Adjustable or Fixed-Mode Regulator Description The G1117A is a low dropout at positive adjustable or fixed-mode regulator with minimum of 1A output current capability. The product is specifically designed to provide well-regulated supply for low voltage IC applications

G1117T63U

Abstract: IT 223 G1117
Contextual Info: G1117 Global Mixed-mode Technology Inc. 1A Adjustable Low-Dropout Linear Regulator Features General Description „Available in adjust version „Space saving SOT 223 package „Internal short circuit current limiting „Internal over temperature protection

InGaAs photodiode array chip

Abstract: charge amplifier array G11135 Image Sensors G11135-512DE
Contextual Info: InGaAs linear image sensors G11135 series Single video line 256/512 pixels near infrared image sensor (0.95 to 1.7 m) The G11135 series InGaAs linear image sensors designed for foreign object inspection equipment. These linear image sensors consist of an InGaAs photodiode array and CMOS chip that contains a charge amplifier array, an offset compensation circuit,

1bw smd

Abstract: smd 1bw
Contextual Info: InGaAs PIN photodiodes G11193 series Small package, surface mount type Features Applications Small SMD surface mount device package Optical power meter Low noise, low dark current Measurement/analytical instruments Low price General ratings Parameter G11193-02R

Contextual Info: Power LED I TECHNICAL DATA W11191, W11192 N11191, N11192 D11191, D11192 B11191, B11192 G11191, G11192 R11191, R11192 C11191, C11192 SEOUL SEMICONDUCTOR CO., LTD. 148-29, Kasan-Dong, Keumchun-Gu, Seoul, Korea TEL : 82-2-3281-6269 FAX : 82-2-857-5430 Rev05 – 2005/09

G1117

Contextual Info: G1117 Global Mixed-mode Technology Inc. 1A Adjustable Low-Dropout Linear Regulator Features „ „ „ „ „ General Description The G1117 is a low dropout linear regulator with a dropout of 1.2V at 800mA of load current and 1.3V at 1A of load current. It is available in an adjustable

t4 MARKING SOT223

Abstract: G1117-33T43Uf G1117-25T63UF 1117-18 G1117 G1117-18T43Uf G1117-25T43Uf G1117-15T43Uf G1117-33T63U 1117-3.3
Contextual Info: G1117-XX Global Mixed-mode Technology Inc. 1A Low-Dropout Linear Regulator Features „ „ „ „ „ General Description The G1117-XX is a low dropout linear regulator with a dropout of 1.3V at 1A of load current. It is available in four fixed voltage: 1.5V, 1.8V, 2.5V,

Contextual Info: GaAsP photodiode Diffusion type Photodiode for visible light detection Features Applications Low dark current Analytical instrument High stability Color identification Structure / Absolute maximum ratings Type no. G1115 G1116 G1117 G1118 G1120 G3067 G2711-01

1N5804

Abstract: 1n5806 JANTX 1N5806 1N5802 JANTXV
Contextual Info: RECTIFIER, up to 150V, 2.5A, 25ns TEL:805-498-2111 FAX:805-498- 1N5802 1N5804 1N5806 3804 WEB:http://www.semtech.com MECHANICAL G111 Dimensions DIM N Millimeters Inches Note MIN MAX MIN MAX A 1.65 2.16 .065 .085 - B 17.8 33.0 0.70 1.30 - C 3.18 6.35 .125 0.250

Contextual Info: Power LED I TECHNICAL DATA W11191, W11192 N11191, N11192 B11191, B11192 G11191, G11192 R11191, R11192 C11191, C11192 SEOUL SEMICONDUCTOR CO., LTD. 148-29, Kasan-Dong, Keumchun-Gu, Seoul, Korea TEL : 82-2-3281-6269 FAX : 82-2-857-5430 Rev04 – 2005/04 1 SPECIFICATIONS

Contextual Info: Power LED I TECHNICAL DATA W11190 N11190 D11190 B11190 G11190 R11190 C11190 A11190 SEOUL SEMICONDUCTOR CO., LTD. 148-29, Kasan-Dong, Keumchun-Gu, Seoul, Korea TEL : 82-2-3281-6269 FAX : 82-2-857-5430 Rev09 – 2006/05 1 SPECIFICATIONS - Features • Super high flux output and high luminance

G11193-03R

Contextual Info: InGaAs PINフォトダイオード G11193シリーズ 小型パッケージ表面実装型 特長 用途 小型SMDパッケージ 光量モニタ 低ノイズ、低暗電流 計測／分析機器 低価格 構成 G11193-02R 項目 パッケージ 受光面サイズ

Contextual Info: InGaAsリニアイメージセンサ G11135-256DD, G11135-512DE シングルビデオライン 256/512 画素 近赤外イメージセンサ (0.95 ～ 1.7 m)

AM 5888

Abstract: g1116 5888 C 5888 G1118 G1120 Photodiode g1117 G1115 G1117 G2711-01
Contextual Info: PHOTODIODE GaAsP photodiode Diffusion type Photodiode for visible light detection Features Applications l Low dark current l High stability l Analytical instrument l Color identification • General ratings / Absolute maximum ratings Type No. G1115 G1116 G1117

photodiode linear array 256

Contextual Info: InGaAs linear image sensors G11135-256DD, G11135-512DE Single video line 256/512 pixels near infrared image sensor (0.95 to 1.7 m) The G11135 series InGaAs linear image sensors designed for foreign object inspection equipment. These linear image sensors

AM 5888

Abstract: G1118 G1116 G1120 G1115 G1117 G2711-01 G3067 Hamamatsu G1118
Contextual Info: PHOTODIODE GaAsP photodiode Diffusion type Photodiode for visible light detection Features Applications l Low dark current l High stability l Analytical instrument l Color identification • General ratings / Absolute maximum ratings Type No. G1115 G1116 G1117

Contextual Info: G1117 Global Mixed-mode Technology Inc. 1A Adjustable Low-Dropout Linear Regulator Features „ „ „ „ „ General Description The G1117 is a low dropout linear regulator with a dropout of 1.2V at 800mA of load current and 1.3V at 1A of load current. It is available in an adjustable version, which can set the output from