C1000SE3 Search Results

Contextual Info: Ì 989963 CENTRAL SEMICONDUCTOR b i d e I oocm ns a _ 61C 00195'^ ^ « T POWER DARLINGTON TRANSISTORS EPOXY 6.0A 1C = TYPE NO . Ic VCEO Pd (Max) Tc=25°C Volts Watts VCE(S) @IC fT Min Amps Volts Amps Mh z hFE @IC Min - Max PNP Amps BDW23 BDW24 : 6.0 45 50

D40C2

Contextual Info: CENTRAL SEMICONDUCTOR fc,l D | nfl'HbB 4 1~3 T"29“29 SMALL SIGNAL DARLINGTON TRANSISTORS EPOXY lc ^ ^ O O m A TYPE NO. OPERATING AND STORAGE TEMPERATURE -6 5 °to + 1 5 0 °C Jc VCEO Amps Volts 2N5305 0.3 25 2N5306 0.3 2N 5306A Pd (Max) hFE @ 1C TA=25°C

2n3072

Contextual Info: ti CENTRAL SEM ICON DU CTOR : 1VÖVVOJ U CINI R A L D E I nû'î'JtiB ODDOSSG 3 T ¿ v n h an r t *j* 7 / «•* 6 i. ci r nono^zzo ~ O* StrtlCUN Ü UtTÜR V eb hFE at •c V V min max mA V 2N2800 2N2801 2N2837 2N2838 -2N2904 50 50 50 50 60 35 35 35 35

BUW67

Abstract: BDX85C bdx86c 2N6383 2N6384 2N6385 2N6648 2N6649 2N6650 BDX85
Contextual Info: 1989963 CEN TRA L SEMICONDUCTOR T i ' deT| ‘ 61C - 0 0 1 9 7 ^ oD oon? i T -33-29 ~ jp POWER DARLINGTON TRANSISTORS METAL IC 10A = TYPE lc hFE@ lc VCE(S) @lc fT Min Mhz Volts Watts Min - Max Amps Volts Amps 10 40 100 1,000-20,000 5.0 2.0 5.0 - 2N6649 10

Contextual Info: CENTRAL SEMICONDUCTOR □□□□3Db 2 r r - z^ S '-1-3 saiîjÊffüI central CS39-2 i i s n l s o n ä u e f e r C o rp . C e n tra l S e m lc o iiÊ fy e É s r co?f&. SILICON CONTROLLED RECTIFIER central Semiconductor Corp. 2 AMPS 50 THRU 400 VOLTS

2N1256 S P

Contextual Info: CENTRAL SEMICONDUCTOR : ' tï F Ë 1 nfl*nt3 D O O O S n 7 f 1 9 8 9 9 6 3 C E N T R A L SfcMlLUNÜUCTUK 6 1 C “0 0 2 1 9 . T~ 5 l ~ 0 / NPN METAL CAN - LOW IMOISE LEVEL AM PLIFIER ContU VCB 2N3117 2N4383 2N4384 2N4385 2N4386 60 40 40 40 40 V V V hpE min

Contextual Info: 61C -00176 :'Y - ° ì - i y 198996.3 CENTRAL SEMICONDUCTOR D00017L. 4 |~~ i ä s L “ Central ieitsl£ iìiHfet@r c o r p - J P ffmiri il K » VX s ^ 3 •&» CRSH5 SERIES eenfral liin ieo n iiu stsr e@rp. ERS SCHOTTKY BARRI1ER RECTI VOLTS 1.0 AMP, 20 THRU

2N4143

Abstract: T0105 2N3640 2N5383 2N4122 2N4355 2N4917 2n5139 2N4916
Contextual Info: CENTRAL SEMICONDUCTOR = tï 1989963 CENTRAL SEMICONDUCTOR * 1 DE | . JT.„. DDDDS13 b 61C 00213 - //-°/ PNP EPOXY - SW ITCHING A N D G ENER AL PURPOSE (Cont'd. C0b MHz pF Vcb V CE V eb hFE at •c VCE V V V min max mA V 2N4060 2N4061 2N40622N4121 2N4122

CBR-12

Contextual Info: bl CENTRAL SE MICONDU CTOR 40<80 Amperes ^RRM <volts> DOGOlSfl a r T -Ô /-Ô I General Purpose Silicon Power Rectifier deI ^^ £ * "5 4 D I ooooisa 2 | CR40- CR40- CR40- CR40- CR40- CR40- CR40- CR40- 005 0 10 020 040 0 60 08 0 100 120 CR60- CR60- CR60-

Contextual Info: 1989963 CENTRAI S E M I C O N D UCTOR . ~T ï 61C 0 0 1 9 6 r T - 3 3 - 2 9 o o o o n t, o f ' ~ t ^ 3 & ' 37— POWER DARLINGTON TRANSISTORS EPOXY " IC = 10 A ^ O P E R A T I N G A N D S T O R A G E T E M P E R A T U R E -6 5 °to + 1 5 0 ° C TYPE

Contextual Info: na^ta _CENTRAL SEMICONDUCTOR @@^3* S@6û^@@BBG9QBefiOr €@63p. €@Bifrcal SeniBeOBItiUCtOr C S’p. d o o o s t t ^ T ~ T - ¿s '- // CQ92F CQ92A CQ92B CQ92D CQ92M TRI AC 0.8 AMPS 50 THRU 600 VOLTS central semiconductor Corp. 145 Adams Avenue Hauppauge, New York 11788

1N SERIES DIODE

Abstract: in 4749A 4733a zener IN 4751A 4744a 4749a 2 Watt Zener Diode in 4743a 4730A zener diode 1n
Contextual Info: Q00D5b4 1 - C E N T R A L SEMICONDUCTOR i ~ r - a - t 3 T 5% Tolerance • Case B 1 Watt Zener Diode Zener Voltage Vz@lz Test Current lz Zener Impedance Zz Volts mA Ohms '/ M ir Zener Voltage V z @ lz Test Current lz Zener Impedance Zz TYPE NO. CENTRAL TYPE NO.

Contextual Info: 1989963 CENTRAL CENTRAL 6i r S E M IC O N D U C TO R ; t ï SEMICONDUCTOR noi 94 T-/n_?q D Ë J n f i tn t 3 D G a a im b T POWER DARLINGTON TRANSISTORS EPOXY le = OPERATING AND STO RAGE TEM PE R A T U R E -6 5 °to +150°C 2 .0 A VCE(S) @ 1C fT Min (Typ)