C1 DIODE Search Results

C10X

Contextual Info: SKN 26 THYRISTOR BRIDGE,SCR,BRIDGE Stud Diode Rectifier Diode 3$>@ 3$$@ 3 X22 [22 0C22 0X22 3 X22 [22 0C22 0X22 =HM3 V CR M A 6:Z 0[2 ¥] ;7 V 022 ¥OI >BG C1^2X >B$ C1^2X >BG C1^2[ >B$ C1^2[ >BG C1^0C >B$ C1^0C >BG C1^0X >B$ C1^0X 0122 0122 >BG C1^01 SKR 26

car battery charger

Abstract: NTHD4N02 NTHD4P02 NTLJF3117P NTLJF3118N NTLJF4156N NTMSD3P102 NTMSD3P303 NTMSD6N303 mosfet with schottky body diode
Contextual Info: L1 Vin Vout C1 D1 Q1 ON/OFF C2 FETKY GND GND L1 Vin Vout FETKY C1 Typical Uses for FETKY Devices Vin ON/OFF GND C1 ON/OFF Q1 D1 C2 Vout Q1 C2 GND R1 Protection Circuit GND GND FETKY The Schottky diode actually provides a by-pass channel and keeps D1 reverse

Pin diode G4S

Abstract: VSO05561
Contextual Info: BAR 63 . W Silicon PIN Diode 3 • PIN diode for high speed switching of RF signal • Low forward resistance • Very low capacitance 2 • For frequencies up to 3 GHz 1 BAR 63-04W BAR 63-05W C1/A2 3 BAR 63-06W C1/C2 A1/A2 3 3 1 2 1 2 1 2 A1 C2 A1 A2 C1

Pin diode G4S

Abstract: BAR63-04W BAR63-05W BAR63 BAR63-06W VSO05561 diode C2 marking c2 diode diode MARKING A1 marking G5s
Contextual Info: BAR63.W Silicon PIN Diode 3 • PIN diode for high speed switching of RF signal • Low forward resistance • Very low capacitance 2 • For frequencies up to 3 GHz 1 BAR63-04W BAR63-05W C1/A2 3 BAR63-06W C1/C2 A1/A2 3 3 1 2 1 2 1 2 A1 C2 A1 A2 C1 C2 EHA07181

NSCW215

Abstract: IN5817 LM2791 LM2792
Contextual Info: National News LM2791/92 January 2002 www.national.com/see/wled Multiple Output Current-Regulated LED Drivers to Produce Balanced White-Backlight in Color Displays Basic Application Circuit IN5817 VIN = 2.9 to 5.8V C1 1 µF C1 VIN POUT C1+ D1 1 µF LM2792 D2

CM300DY-24H

Abstract: CM300DY24H
Contextual Info: MITSUBISHI IGBT MODULES CM300DY-24H HIGH POWER SWITCHING USE INSULATED TYPE A B P - DIA. 4 TYP. C E2 C1 E2 C2 C2E1 R C1 E1 M R L F G G H S - M6 THD. (3 TYP) N K E N K K D TAB#110 t=0.5 Q J E2 C2 N C2E1 C1 C1 E1 E2 Outline Drawing and Circuit Diagram Dimensions

CM300DY-28H

Contextual Info: MITSUBISHI IGBT MODULES CM300DY-28H HIGH POWER SWITCHING USE INSULATED TYPE A B P - DIA. 4 TYP. C E2 C1 E2 C2 C2E1 R C1 E1 M R L F G G H S - M6 THD. (3 TYP) N K E N K K D TAB #110, t = 0.5 Q J E2 C2 N C2E1 C1 C1 E1 E2 Outline Drawing and Circuit Diagram

KF412

Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information FF 800 R 12 KF4 55,2 11,85 M8 130 114 31,5 C2 E1 C1 E2 E2 E1 C1 G1 M4 28 7 2,5 deep 40 53 E1 C2 16 18 G2 44 2,5 deep 57 C2 E1 C2 G1 G2 C1 E2 C1 E2 20.03.1998 FF 800 R 12 KF 4 Höchstzulässige Werte / Maximum rated values

Mitsubishi Electric IGBT MODULES

Abstract: CM300DY24H CM300DY-24H
Contextual Info: MITSUBISHI IGBT MODULES CM300DY-24H HIGH POWER SWITCHING USE INSULATED TYPE A B P - DIA. 4 TYP. C2E1 C1 R L F C1 E1 C E2 E2 C2 M G G K E N K K R H S - M6 THD. (3 TYP) N D TAB#110 t=0.5 Q J E2 C2 N C2E1 C1 C1 E1 E2 Outline Drawing and Circuit Diagram Dimensions

CM300DY-28H

Abstract: OF IGBT 600A 800V
Contextual Info: MITSUBISHI IGBT MODULES CM300DY-28H HIGH POWER SWITCHING USE INSULATED TYPE A B P - DIA. 4 TYP. C E2 C1 E2 C2 C2E1 R C1 E1 M R L F G G H S - M6 THD. (3 TYP) N K E N K K D TAB #110, t = 0.5 Q J E2 C2 N C2E1 C1 C1 E1 E2 Outline Drawing and Circuit Diagram

IC1500

Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information FF 800 R 12 KF4 55,2 11,85 M8 130 114 31,5 C2 E1 C1 E2 E2 E1 C1 G1 M4 28 7 2,5 deep 40 53 E1 C2 16 18 G2 44 2,5 deep 57 C2 E1 C2 G1 G2 C1 E2 C1 E2 20.03.1998 FF 800 R 12 KF 4 Höchstzulässige Werte / Maximum rated values

Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information FF 800 R 12 KF4 55,2 11,85 M8 130 114 31,5 C2 E1 C1 E2 E2 E1 C1 G1 M4 28 7 2,5 deep 40 53 E1 C2 16 18 G2 44 2,5 deep 57 C2 E1 C2 G1 G2 C1 E2 C1 E2 20.03.1998 FF 800 R 12 KF 4 Höchstzulässige Werte / Maximum rated values

Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information FF 800 R 12 KF4 55,2 11,85 M8 130 114 31,5 C2 E1 C1 E2 E2 E1 C1 G1 M4 7 28 2,5 deep C2 16 40 53 E1 G2 18 44 2,5 deep 57 C2 C2 E1 G1 G2 C1 E2 C1 E2 20.03.1998 FF 800 R 12 KF 4 Höchstzulässige Werte / Maximum rated values

FF 150 R 1200 kf igbt

Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information FF 800 R 12 KF4 55,2 11,85 M8 130 114 31,5 C2 E1 C1 E2 E2 E1 C1 G1 M4 28 7 2,5 deep 40 53 E1 C2 16 18 G2 44 2,5 deep 57 C2 E1 C2 G1 G2 C1 E2 C1 E2 20.03.1998 FF 800 R 12 KF 4 Höchstzulässige Werte / Maximum rated values

ADM3252E

Abstract: diode zener s4 adm3252
Contextual Info: Isolated, Dual Channel, RS-232 Line Driver/Receiver ADM3252E Data Sheet FUNCTIONAL BLOCK DIAGRAM C1 0.1µF 16V C3 0.1µF 10V C1+ C1– V+ ADM3252E 0.1µF VCC 10µF 2.5 kV fully isolated power and data RS-232 transceiver isoPower integrated, isolated dc-to-dc converter

Contextual Info: APTGF100DU120TG Dual common source NPT IGBT Power Module VCES = 1200V IC = 100A @ Tc = 80°C Application • AC Switches • Switched Mode Power Supplies • Uninterruptible Power Supplies C2 C1 Q1 Q2 G1 G2 E1 E2 E NT C1 NTC2 G2 E2 C1 E C2 C2 E1 E2 NTC2 G1

Contextual Info: APTGF150DU120TG Dual common source NPT IGBT Power Module C1 Application • AC Switches • Switched Mode Power Supplies • Uninterruptible Power Supplies C2 Q1 Q2 G1 G2 E1 E2 E NT C1 NTC2 G2 E2 C1 VCES = 1200V IC = 150A @ Tc = 80°C E Benefits • Outstanding performance at high frequency

Contextual Info: APTGF180DU60TG Dual common source NPT IGBT Power Module VCES = 600V IC = 180A @ Tc = 80°C Application • AC Switches • Switched Mode Power Supplies • Uninterruptible Power Supplies C2 C1 Q1 Q2 G1 G2 E1 E2 E NT C1 NT C2 G2 C2 E2 C1 C2 E E1 E2 NTC2 G1

Contextual Info: Isolated, Single-Channel RS-232 Line Driver/Receiver ADM3251E Data Sheet FEATURES FUNCTIONAL BLOCK DIAGRAM C3 0.1µF 10V C1 0.1µF 16V C1+ C1– V+ ADM3251E VCC OSC VISO 0.1µF C2+ C2– VOLTAGE DOUBLER RECT C2 0.1µF 16V C4 0.1µF 16V V– VOLTAGE INVERTER

Contextual Info: APTGF50DU120TG Dual common source NPT IGBT Power Module VCES = 1200V IC = 50A @ Tc = 80°C Application • AC Switches • Switched Mode Power Supplies • Uninterruptible Power Supplies C2 C1 Q1 Q2 G1 G2 E1 E2 E NT C1 NT C2 G2 E2 C1 E C2 C2 E1 E2 NTC2 G1

ADM3251E

Abstract: CONVERTER DC TO AC OF 5 KV AN-0971 isolated dc-to-dc converter ADP3330 EIA-232 SD103C TTL RS232 Level Converter
Contextual Info: Isolated, Single-Channel RS-232 Line Driver/Receiver ADM3251E FEATURES FUNCTIONAL BLOCK DIAGRAM C3 0.1µF 10V C1 0.1µF 16V C1+ C1– V+ ADM3251E VCC OSC VISO 0.1µF C2+ C2– VOLTAGE DOUBLER RECT C2 0.1µF 16V C4 0.1µF 16V V– VOLTAGE INVERTER REG 0.1µF

Contextual Info: Technical Data Sheet 5mm Infrared LED , T-1 3/4 HIR333B/C1 Features ˙High reliability ˙High radiant intensity ˙Peak wavelength λp=850nm ˙2.54mm Lead spacing ˙Low forward voltage Descriptions ˙EVERLIGHT’S Infrared Emitting Diode HIR333B/C1 is a high intensity diode , molded in a black plastic

automatic door sensor

Contextual Info: Technical Data Sheet 3mm Silicon PIN Photodiode PD204-6B/C1 Features ˙Fast response time ˙High photo sensitivity ˙Small junction capacitance Descriptions ˙PD204-6B/C1 is a high speed and high sensitive PIN photodiode in a standard 3Φplastic package. The device is matched to infrared emitting diode.

ADM3252E

Abstract: ADM3252EABCZ adm3252
Contextual Info: FEATURES FUNCTIONAL BLOCK DIAGRAM C1 0.1µF 16V C3 0.1µF 10V C1+ C1– V+ ADM3252E 0.1µF VCC 10µF 2.5 kV fully isolated power and data RS-232 transceiver isoPower integrated, isolated dc-to-dc converter Operational from single 3.3 V or 5 V supply 460 kbps data rate