C1 DIODE Search Results

CM300DY-28H

Abstract: OF IGBT 600A 800V
Contextual Info: MITSUBISHI IGBT MODULES CM300DY-28H HIGH POWER SWITCHING USE INSULATED TYPE A B P - DIA. 4 TYP. C E2 C1 E2 C2 C2E1 R C1 E1 M R L F G G H S - M6 THD. (3 TYP) N K E N K K D TAB #110, t = 0.5 Q J E2 C2 N C2E1 C1 C1 E1 E2 Outline Drawing and Circuit Diagram

IC1500

Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information FF 800 R 12 KF4 55,2 11,85 M8 130 114 31,5 C2 E1 C1 E2 E2 E1 C1 G1 M4 28 7 2,5 deep 40 53 E1 C2 16 18 G2 44 2,5 deep 57 C2 E1 C2 G1 G2 C1 E2 C1 E2 20.03.1998 FF 800 R 12 KF 4 Höchstzulässige Werte / Maximum rated values

Contextual Info: APTGF100DU120TG Dual common source NPT IGBT Power Module VCES = 1200V IC = 100A @ Tc = 80°C Application • AC Switches • Switched Mode Power Supplies • Uninterruptible Power Supplies C2 C1 Q1 Q2 G1 G2 E1 E2 E NT C1 NTC2 G2 E2 C1 E C2 C2 E1 E2 NTC2 G1

Contextual Info: APTGF150DU120TG Dual common source NPT IGBT Power Module C1 Application • AC Switches • Switched Mode Power Supplies • Uninterruptible Power Supplies C2 Q1 Q2 G1 G2 E1 E2 E NT C1 NTC2 G2 E2 C1 VCES = 1200V IC = 150A @ Tc = 80°C E Benefits • Outstanding performance at high frequency

ADM3251E

Abstract: CONVERTER DC TO AC OF 5 KV AN-0971 isolated dc-to-dc converter ADP3330 EIA-232 SD103C TTL RS232 Level Converter
Contextual Info: Isolated, Single-Channel RS-232 Line Driver/Receiver ADM3251E FEATURES FUNCTIONAL BLOCK DIAGRAM C3 0.1µF 10V C1 0.1µF 16V C1+ C1– V+ ADM3251E VCC OSC VISO 0.1µF C2+ C2– VOLTAGE DOUBLER RECT C2 0.1µF 16V C4 0.1µF 16V V– VOLTAGE INVERTER REG 0.1µF

ADM3252E

Abstract: ADM3252EABCZ adm3252
Contextual Info: FEATURES FUNCTIONAL BLOCK DIAGRAM C1 0.1µF 16V C3 0.1µF 10V C1+ C1– V+ ADM3252E 0.1µF VCC 10µF 2.5 kV fully isolated power and data RS-232 transceiver isoPower integrated, isolated dc-to-dc converter Operational from single 3.3 V or 5 V supply 460 kbps data rate

FD400R12KF4

Contextual Info: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FD 400 R 12 KF4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E1 C1 G1 M4 7 28 2,5 deep screwing depth max. 8 16 40 2,5 deep 53 E1 C2 K C1 E2 (A) E1 G1

FD600R12KF4

Abstract: G1 TRANSISTOR
Contextual Info: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FD 600 R 12 KF4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E1 C1 G1 M4 7 28 2,5 deep screwing depth max. 8 16 40 2,5 deep 53 E1 C2 K C1 E2 (A) E1 G1

ADP8861

Abstract: ADP8861ACPZ-RL ADP8861DBCB-EVALZ ADP886XMB1-EVALZ DL17 JESD51-9
Contextual Info: Charge Pump, 7-Channel Smart LED Driver with I2C Interface ADP8861 FEATURES TYPICAL OPERATING CIRCUIT D1 D2 D3 D4 D5 D6 D7 VIN CIN 1µF VOUT COUT 1µF VDDIO nRST C1+ VDDIO ADP8861 SDA C1– VDDIO C1 1µF C2+ SCL C2– VDDIO C2 1µF nINT GND1 GND2 08391-001

bav99w A7S

Abstract: BAV99W VSO05561
Contextual Info: BAV99W Silicon Switching Diode Array 3
For high-speed switching applications
Connected in series 2 C1/A2 3 1 1 2 A1 C2 VSO05561 EHA07181 Type Marking BAV99W A7s Pin Configuration 1 = A1 2 = C2 Package 3 = C1/A2 SOT323 Maximum Ratings Parameter Symbol Diode reverse voltage

Marking a1s

Abstract: BAW56W VSO05561
Contextual Info: BAW56W Silicon Switching Diode Array 3 • For high-speed switching applications • Common anode 2 A1/A2 3 1 1 2 C1 C2 VSO05561 EHA07187 Type BAW56W Marking A1s 1 = C1 Pin Configuration 2 = C2 3 = A1/A2 Package SOT323 Maximum Ratings Parameter Symbol Diode reverse voltage

BAV70W

Abstract: VSO05561 10TSV
Contextual Info: BAV70W Silicon Switching Diode Array 3
For high-speed switching applications
Common cathode 2 C1/C2 3 1 1 2 A1 A2 VSO05561 EHA07179 Type Marking BAV70W A4s Pin Configuration 1 = A1 2 = A2 Package 3 = C1/2 SOT323 Maximum Ratings Parameter Symbol Diode reverse voltage

FD600R12KF4

Contextual Info: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FD 600 R 12 KF4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E1 C1 G1 M4 7 28 2,5 deep screwing depth max. 8 16 40 2,5 deep 53 E1 C2 K C1 E2 (A) E1 G1

SC75

Abstract: BAV70T
Contextual Info: BAV70T Silicon Switching Diode Array 3
For high-speed switching applications
Common cathode 2 C1/C2 3 1 1 2 A1 A2 VPS05996 EHA07179 Type Marking BAV70T A4s Pin Configuration 1 = A1 2 = A2 Package 3 = C1/2 SC75 Maximum Ratings Parameter Symbol Diode reverse voltage

70nh

Abstract: rg4 16 diode RG4 DIODE CE900
Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information FD 400 R 16 KF4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E2 E1 C1 G1 M4 28 screwing depth max. 8 7 2,5 deep 40 53 C2 16 18 G2 44 2,5 deep 57 E1 C2 K C1 E2 (A) E1

Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information FF 600 R 16 KF4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E2 E1 C1 G1 M4 28 screwing depth max. 8 7 2,5 deep 40 53 E1 C2 16 18 G2 44 2,5 deep 57 C2 E1 C2 G1 G2 C1

FD600

Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information FD 600 R 16 KF4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E2 E1 C1 G1 M4 28 screwing depth max. 8 7 2,5 deep 40 53 C2 16 18 G2 44 2,5 deep 57 E1 C2 K C1 E2 (A) E1

Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information FF 400 R 16 KF4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E2 E1 C1 G1 M4 28 screwing depth max. 8 7 2,5 deep 40 53 E1 C2 16 18 G2 44 2,5 deep 57 C2 E1 C2 G1 G2 C1

Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information FD 600 R 16 KF4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E2 E1 C1 G1 M4 28 screwing depth max. 8 7 2,5 deep 40 53 C2 16 18 G2 44 2,5 deep 57 E1 C2 K C1 E2 (A) E1

BAV99S

Abstract: VPS05604
Contextual Info: BAV99S Silicon Switching Diode Array 4 • For high-speed switching applications 5 6 • Connected in series • Internal galvanic isolated diodes in one package C1/A2 C2 A1 6 5 4 2 3 1 VPS05604 Di2 Di1 1 2 3 A1 C2 C1/A2 EHA07287 Type Marking BAV99S A7s

BAW56S

Abstract: 6A1 diode VPS05604
Contextual Info: BAW56S Silicon Switching Diode Array 4
For high-speed switching applications 5 6
Common anode
Internal galvanic isolated diode arrays in one package A1/A2 C2 C1 6 5 4 2 3 1 VPS05604 Di2 Di1 1 2 3 C1 C2 A1/A2 EHA07288 Type Marking BAW56S A1s Pin Configuration

BAW56U

Abstract: SC74
Contextual Info: BAW56U Silicon Switching Diode Array • For high-speed switching applications 5 4 6 • Common anode • Internal galvanic isolated diode arrays 3 in one package A1/A2 C2 C1 6 5 4 2 1 VPW09197 Di2 Di1 1 2 3 C1 C2 A1/A2 EHA07288 Type Marking BAW56U A1s Pin Configuration

marking 6c1

Abstract: BAS16U SC74
Contextual Info: BAS16U Silicon Switching Diode Array 5
For high-speed switching applications 4 6
Internal galvanic isolated diodes in one package 3 C1 C2 C3 6 5 4 2 1 VPW09197 1 2 3 A1 A2 A3 EHA07291 Type Marking BAS16U A6s Pin Configuration Package 1=A1 2=A2 3=A3 4=C3 5=C2 6=C1 SC74

APT0406

Abstract: APT0501 APT0502 APTGF150DU120TG
Contextual Info: APTGF150DU120TG Dual common source NPT IGBT Power Module Application • AC Switches • Switched Mode Power Supplies • Uninterruptible Power Supplies C2 Q2 G2 E1 E2 E NT C1 NTC2 G2 E2 C1 E Benefits • Outstanding performance at high frequency operation