C 4242 TRANSISTOR Search Results

D 4242

Abstract: transistor C 4242 IC D 4242 H 4242 transistor H 4242 P-TO263-7-1 D 4242 transistor C 4242 transistor TO263-7 C 4242
Contextual Info: Adjustable LED Driver TLE 4242 G Features • • • • • • • • Adjustable constant current up to 500 mA ±5% Wide input voltage range up to 42 V Low drop voltage Open load detection Overtemperature protection Short circuit proof Reverse polarity proof

D 4242

Abstract: transistor C 4242 datasheet C 4242 FON QFN marking lt 1173 c4242 0023u
Contextual Info: LTC4242 Dual Slot Hot Swap Controller for PCI Express U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Allows Live Insertion into PCI Express Backplane Controls Two Independent PCI Express Slots Independent Control of Main and Auxiliary Supplies

D 4242 transistor

Abstract: transistor C 4242 H 4242 transistor transistor 4242 4242 transistor 2N7086 w 1p 257AB A-1456
Contextual Info: C r 9 ficanix 2N7086 Jm B in c o r p o ra t e d N-Channel Enhancement Mode Transistor TO-257AB Hermetic Package T O P VIEW o PRODUCT SUMMARY r DS ON • d (V) (H) (A) 200 0.16 14 V (BR)DSS 1 GATE 2 DRAIN 3 SO U R CE 1 2 3 Case Isolated ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)

lt 332 diode

Abstract: 4242 DM 4243 dm IRFF330 IRFF331 IRFF332 IRFF333 diode 331 t2235 QA-750
Contextual Info: 1 &£ D SILICONIX INC • Ö 2 5 4 7 3 5 GDlMflEl b ■ IRFF330/331/332/333 C T 'S ilico n ix Jm W incorporated N-Channel Enhancement Mode Transistors T TCJ-205AF - ^ - o q . BOTTOM VIEW PRODUCT SUMMARY PART NUMBER V BR|DSS IRFF330 400 1.0 3.5 IRFF331 350

D496

Abstract: RE40 4242 transistor
Contextual Info: BCM ArrayTM BC384R120T030VM-00 Features • 384 V to 12 V VI BRICK BCM Array • 300 Watt 450 Watt for 1 ms Vin = 360 – 400 V Vout = 11.3 – 12.5 V Iout = 25 A K = 1/32 Rout = 20.0 mΩ max • Vertical mount package reduces footprint • Integrated heat sink simplifies

Contextual Info: IRF740 Semiconductor Data Sheet July 1999 10A, 400V, 0.550 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

Contextual Info: National Semiconductor DM54368 Hex TRI-STATE Inverting Buffers General Description This device contains six Independent gates each of which performs an Inverting buffer function. The outputs have the TRI-STATE feature. When enabled, the outputs exhibit the

B384F120T30

Abstract: D496 D505
Contextual Info: B384F120T30 BCMTM Bus Converter • 384 V to 12 V V•I ChipTM Converter • Typical efficiency 95% • 300 Watt 450 Watt for 1 ms • 125°C operation (TJ) • High density – up to 1017 W/in3 • <1 µs transient response • Small footprint – 260 W/in2

Contextual Info: Preliminary V•I Chip Bus Converter Module B384F120T30 BCM V•I Chip – BCM Bus Converter Module TM • 384 V to 12 V V•I Chip Converter • Typical efficiency 95% • 300 Watt 450 Watt for 1 ms • 125°C operation • High density – up to 1036 W/in3

Contextual Info: PRELIMINARY B384F120T30 BCMTM Bus Converter Module • 384 V to 12 V V•I ChipTM Converter • Typical efficiency 95% • 300 Watt 450 Watt for 1 ms • 125°C operation • High density – up to 1036 W/in3 • <1 µs transient response • Small footprint – 260

Contextual Info: Not Recommended for New Designs - Replaced by BCM384x120y300A00 B384F120T30 BCMTM Bus Converter • 384 V to 12 V V•I ChipTM Converter • Typical efficiency 95% • 300 Watt 450 Watt for 1 ms • 125°C operation (TJ) • High density – up to 1017 W/in3

Contextual Info: PRELIMINARY B384F120T30 BCMTM Bus Converter Module • 384 V to 12 V V•I ChipTM Converter • Typical efficiency 95% • 300 Watt 450 Watt for 1 ms • 125°C operation • High density – up to 1036 W/in3 • <1 µs transient response • Small footprint – 260

Contextual Info: B384F120T30 BCMTM Bus Converter • 384 V to 12 V V•I ChipTM Converter • Typical efficiency 95% • 300 Watt 450 Watt for 1 ms • 125°C operation • High density – up to 1036 W/in3 • <1 µs transient response • Small footprint – 260 W/in2

B384F120T30

Abstract: D496 D505
Contextual Info: B384F120T30 BCMTM Bus Converter • 384 V to 12 V V•I ChipTM Converter • Typical efficiency 95% • 300 Watt 450 Watt for 1 ms • 125°C operation (TJ) • High density – up to 1036 W/in3 • <1 µs transient response • Small footprint – 260 W/in2

A5T3638A

Abstract: a5t3638
Contextual Info: TY P ES A5T3638, A5T3638A P-N-P SILIC ON TRANSISTO R S B U L L E T I N N O . O L -S 7 3 1 1 9 6 2 , M A R C H 1 9 7 3 S IL E C T t T R A N SISTO R S* FOR H IG H -C U R R E N T, M EDIUM -SPEED SW ITCH IN G A PPLICATIO N S • High Collecter C u rren t. . . 500 mA

TDA1270E

Abstract: fly screen
Contextual Info: TDA1170 • TDA1270 TV VERTICAL DEFLECTION SYSTEMS FAIRCHILD LINEAR INTEG RATED C IR C U IT G E N E R A L D E S C R IP TIO N - The TD A 1170 and TD A 1270 are m o nolithic integrated circu its de sig ned for use in TV v e rtica l de fle ctio n system s. They are m a nufactured using

CI31T021BE0

Abstract: CP-01110030 CI3103S0000 CI5105S0000 circuit diagram of 230vac to 12vdc converter CviLux cp ABC400-10XXG
Contextual Info: ABC400-10XXG Data Sheet Features • • • • • • • • • High efficiency up to 91% at 230VAC Universal AC input voltage range: 90-264 VAC Active power factor correction Over temperature, output overvoltage, overcurrent and short circuit protection

NLY4

Abstract: 1RF35
Contextual Info: ¡ 2 H A R R I S /R F 3 5 0 / 3 5 1 / 3 5 2 /3 5 3 IR F 3 5 0 R /3 5 1 R /3 5 2 R /3 5 3 R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features T O -20 4 A A • 1 3 A a n d 1 5 .0 A , 3 5 0 V - 4 0 0 V • r D S o n = ° - 3 f i a n d 0 . 4 f l

Contextual Info: r r iim i TECHNOLOGY LT1072 1.25A High Efficiency Switching Regulator FCRTURCS DCSCRIPTIOR • ■ ■ ■ ■ ■ ■ ■ ■ ■ The LT1072 is a monolithic high power switching regulator. It can be operated in all standard switching configurations including buck, boost, flyback, forward, in­

2NS404

Abstract: Transistors 2n551 2N1018 2N1478 2N1620 2N551 2N2951 2N3920 2N3444 2N2204
Contextual Info: jo m itr o n ic r discrete devices s e m ic o n d u c t o r s S em itronics Corp. silicon transistors cont'd silicon power transistors Power Dissipation @ 25°C Watts h FE @ lc BVc e (volts) (°C) BVcbo (volts) fC) |A) (Cl (Al (C) 150 200 150 200 150 55

LT1072 design manual

Abstract: LT072 LT1072CS8 offline switcher LT1072 I430 diagram IC LT 1072 capacitor 100MF 100v AN-19 LT1070
Contextual Info: w _ m j s 2 1.25A High Efficiency Switching Regulator TECHNOLOGY FCRTURCS DCSCMPTIOn • Available in MiniDIP, T0-220, and TO-3 Packages ■ Wide Input Voltage Range 3V-60V ■ Low Quiescent Current—6mA ■ Internal 1.25A Switch ■ Very Few External Parts Required

1681s

Abstract: IN-4146 in4146
Contextual Info: 19-1247; Rev 0; 7/97 125mA, Frequency-Selectable, Switched-Capacitor Voltage Converters Features ♦ Selectable Switching Frequencies: 125kHz/250kHz MAX1680 500kHz/1 MHz (MAX1681) ♦ Allow Use of Small Capacitors (1liF for the MAX1681) ♦ 125mA Output Current

Contextual Info: 19-1117; Rev 0; 8/96 V M / X IA I Low -C ost, Low-Dropout, D ual L in ear R eg u lato r The MAX8862 output voltage is preset to 4.95V L , 3.175V (T), or 2.85V (R). This device employs Dual Mode operation, allowing user-adjustable outputs from +2V to +11V with external resistors. The input

Contextual Info: Not Recommended For New Designs PT4240 Series 10-W Low -Profile 24V-Input Isolated DC/DC Converter SLTS145A Revised 1/14/2002 Features • • • • • • • • 10W Output Power Input Voltage: 18V to 36V Output Voltages: 1.2V to 13.2V 1500 VDC Isolation