C 3197 NPN Search Results

FZT600

Contextual Info: SOT223 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FZT600 ISSUE 2 -FEBRUARY 1995- - m FEATURES * 2 A c o n tin u o u s c u rre n t * 140 VO LT VCE0 * G uara n te e d h FE S p e cifie d up to 1A

2SA753

Abstract: EN3197 2SA17 2SA1753 2SC45 2SC4577 transistors 2SA 2SA POWER TRANSISTORS
Contextual Info: Ordering number: EN 3197 2SA1753/2SC4577 PNP/NPN Epitaxial Planar Silicon Transistors Low-Frequency General-Purpose Amp Applications Features •Small-sized package permitting the 2SA1753/2SC4577-applied sets to be made small and slim. • Low collector-to-emitter saturation voltage.

BD787

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN BD787 Com plem entary Plastic Silicon Power Transistors PNP BD788 . . . designed for lower power audio amplifier and low current, high-speed switching applications. • • • 4 AMPERE POWER TRANSISTORS COMPLEMENTARY

Contextual Info: L3UQn-m nni , 0017701 Tib MITSUBISHI RF POWER TRANSISTOR — NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2SC4167 is a silicon NPN epitaxial planar type transistor specifi­ cally designed fo r UHF power amplifiers applications. OUTLINE DRAWING D im e n s io n s in m m

an-9744

Abstract: Transistor 3-347 AN9726 AN9718 Transistor 3-354
Contextual Info: H A Semiconductor RM S S Signal Processing Communications 3 C o m m u n ic a tio n s P ro d u cts PAGE HI1177 8-Bit, 40MSPS, 2-Channel D/A Converter. 3-5 HI5628 8-Bit, 165/125/60MSPS, Dual High Speed CMOS D/A Converter.

Contextual Info: N AUER PHILIPS/DISCRETE 86D 01398 ObE D • bbS3T31 D013b3b 0 ” d _JL BLV98 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor in SOT-171 envelope intended fo r use in class-B operated base station transmitters in the 900 MHz communications band.

D 1398 Transistor

Abstract: d 1398 BLV98 32Q1 ci 1404
Contextual Info: N AMER PHILIPS/DISCRETE 86D OLE 0 1398 D "d • bfci53Ii31 D013b3b 3 3 - ft A ~~ BLV98 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor In SOT-171 envelope intended for use in class-B operated base station transmitters in the 900 MHz communications band.

VEE25

Abstract: UCN5840A UCN5840LW UCN5841A UCN5842LW UCN5843A allegro 5841 UCN5841ALW
Contextual Info: ALLEGRO MICROSYSTEMS INC blE J> Mt 050433Û QQQbQSl 5841 5S43 • ALGR THRU BiM O S I I 8 -B IT SEBIAL-INPU T, LATC H ED D B IV EB S U C N 5841A - UCN5843A vEE CLO CK S E R IA L DATA IN LOGIC GROUND LOGIC SUPPLY S E R IA L DATA OUT STR O B E O U TP U T E N A B LE

c 3198 transistor

Abstract: 2N6383 IC 6648 2N6648 2n6385 sc 3198 transistor
Contextual Info: MOTOROLA SC XSTR S/ R F 12E D I b3b?5S4 □ 004 3MG 1 r -5 3 '^ 9 r -3 3 '3 / MOTOROLA SEMICONDUCTOR TECHNICAL DATA 15 A M P E R E P E A K COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . . . m o n o lith ic com plem en tary silicon Darlington transistors designed

Contextual Info: 5841 5843 THRU BiMOS U 8-BIT SERIAL-INPUT, LATCHED DRIVERS U C N 5841A - UCN5843A VEE CLO CK S E R IA L DATA IN LOGIC GROUND LOGIC SUPPLY S E R IA L DATA OUT STRO BE OU TP U T ENA B LE V EE Dwg. No. A-12,659 ABSOLUTE MAXIMUM RATINGS a t 25°C F ree-A ir T e m p e ra tu re

5841A

Contextual Info: 5841 5843 T H RI BiMOS II 8-B IT SERIAL-INPUT, LATCH ED DRIVERS U C N 5841A - U C N 5843A V ee C LO C K S E R IA L DATA IN LOGIC GROUND LOGIC SUPPLY S E R IA L D A TA OUT STR O BE O UTP UT E N A B L E V EE Dwg. No A-12,659 A B S O L U T E M A X IM U M R A T IN G S

hall sensor 3144

Abstract: hall effect sensor 3144 3144 hall sensor hall effect sensor application note 3144 3059 npn transistor hall effect sensor 133 UGN3275K UGN5275K 3141 hall sensor 3503 allegro hall effect
Contextual Info: 5275 COMPLEMENTARY OUTPUT POWER HALL LATCH X Type UGN5275K latching Hall-effect sensors are bipolar integrated circuits designed for electronic commutation of brushless dc motors. They feature open-collector complementary power outputs that are capable of sinking up to 300 mA continuously. Increased current

hall effect sensor 3144

Abstract: hall effect sensor application note 3144 C 12 PH Zener diode hall current sensor 3A zener diode C 3197 hall effect sensor 4 pin "Brushless DC Motor" 3141 hall effect sensor Bipolar Junction Transistor
Contextual Info: 5275 COMPLEMENTARY OUTPUT POWERHALL LATCH COMPLEMENTARY OUTPUT POWER HALL® LATCH X Type UGN5275K latching Hall-effect sensors are bipolar integrated circuits designed for electronic commutation of brushless dc motors. They feature open-collector complementary power outputs that are

Optocouplers App Note

Contextual Info: TIL191, TILI 92, TIL193, TIL191A, TIL192A, TIL193A TILI 91B, TIL192B, TIL193B OPTOCOUPLERS D 3 2 6 3 , A P R IL 1 9 8 9 - R E V I S E D S E P T E M B E R 1 9 8 9 Gallium Arsenide Diode Infrared Source • Source Is Optically Coupled to Silicon N-P-N Phototransistor

EZ 707

Abstract: 2SC3544 EZ 0710 EZ 728
Contextual Info: -NPN SILICON OSCILLATOR AND MIXER TRANSISTOR NE944 SERIES FEATURES_ DESCRIPTION . LOW COST The NE944 series of NPN silicon epitaxial bipolar transistors is intended for use in general purpose UHF oscillator and mixer applications. It is suitable for automotive keyless entry

AH 503 hall sensor

Abstract: schematic diagram power supply str f6654 schematic diagram power supply str f6656 of AH 503 hall sensor str f6654 STR-F6654 STR-F6656 TRANSISTOR J 5804 STR-S5707 STR-S6708 schematic diagram
Contextual Info: A Sanken Company www.allegromicro.com Allegro MicroSystems, Inc. specializes in the design and manufacture of advanced mixed-signal analog + digital integrated circuits. Allegro, an American-managed, wholly-owned subsidiary of Sanken Electric Co., Ltd., combines 30+ years of

Contextual Info: Operational Am plifiers C 3 E I HARRIS UU S E M I C O N D U C T O R HARRIS RCA GE CA3410A, CA3410 INTERSIL M ay 1 9 9 0 Quad BiMOS Operational Amplifiers With M O S F E T Input, Biploar Output Features: A pp lica tio n s: • Internally com pensated m MOSFET Input Stage

str 5707

Abstract: 2SC 8050 scr ky 202 TRANSISTOR J 5804 NPN str 6709 TRANSISTOR J 5804 2sc 8188 lr 2905 transistor 2sc 8187 2SD 5703
Contextual Info: PART NUMBERING SYSTEMS ALLEGRO MICROSYSTEMS IC PART NUMBERS A 1234 E A F-1 Instructions optional; in the order listed . A or -A = (any letter) Revision, see detail specification F = Active pull-down device (BiMOS only) -1 = Selected version, see detail specification

UC3825

Abstract: UC3825 push pull dc to dc converter unitrode uc3825b u107 unitrode U-128 unitrode U-111 unitrode Applications Note U-107 U-128 unitrode UC3823 converter UC3825A
Contextual Info: U-128 APPLICATION NOTE THE UC3823A,B AND UC3825A,B ENHANCED GENERATION OF PWM CONTROLLERS BILL ANDREYCAK ABSTRACT This application note will highlight the enhancements incorporated in four new PWM control ICs, the UC3823A, UC3823B, UC3825A and UC3825B devices. Based upon the industry standard UC3823 and UC3825 controllers, this advanced generation features several key improvements in protection and performance over their predecessors. Newly developed techniques such as leading edge blanking of the current sense input and full cycle soft start protection following a fault have

BA 5982

Abstract: 143r 0709s nec d 882 p transistor transistor NEC D 882 p 7m 0880 IC NEC NE85635 ceramic micro-X package 015e1
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES FEATURES_ • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION • LOW COST 35 MICRO-X

2SD 4206

Abstract: str 5707 ky 201 thyristor scr ky 202 2SD 4206 npn gi 9444 diode TRANSISTOR SMD 9014 2SD 5703 STR 6757 TRANSISTOR SMD DK QC
Contextual Info: PART NUMBERING SYSTEMS ALLEGRO MICROSYSTEMS IC PART NUMBERS A 1234 E A F-1 Instructions optional; in the order listed . A or -A = Revision, see detail specification F = Active pull-down device (BiMOS only) -FP = Factory programmed -LC = Radial lead form LT = Tape and reel (package LH only)

TRANSISTOR SMD 613

Abstract: TRANSISTOR SMD DK QC transistor SMD DK -RN Sanken Schottky Diode Mi 15 spx 3955 SANKEN power supply diode zener smd sg 64 transistor SMD DK qs 301 miniature smd transistor KY smd transistor
Contextual Info: PART NUMBERING SYSTEMS ALLEGRO MICROSYSTEMS IC PART NUMBERS A 1234 E A F-1 Instructions optional; in the order listed . A or -A = Revision, see detail specification F = Active pull-down device (BiMOS only) -FP = Factory programmed -LC = Radial lead form LT = Tape and reel (package LH only)

UC3825 push pull dc to dc converter

Abstract: unitrode Applications Note U-107 UC3825 unitrode U-111 unitrode uc3825b UC3823 converter UC3825A "cross reference" unitrode U-128 UC3825A UC3825B
Contextual Info: U-128 APPLICATION NOTE THE UC3823A,B AND UC3825A,B ENHANCED GENERATION OF PWM CONTROLLERS BILL ANDREYCAK ABSTRACT This application note will highlight the enhancements incorporated in four new PWM control ICs, the UC3823A, UC3823B, UC3825A and UC3825B devices. Based upon the industry standard UC3823 and UC3825 controllers, this advanced generation features several key improvements in protection and performance over their predecessors. Newly developed techniques such as leading edge blanking of the current sense input and full cycle soft start protection following a fault have

KSD 166

Abstract: LT 7202 diode Kertron LA 4301 transistor KSP 13 801 KDA 1.2 2N5085 LT 7207 KSP 13 801 0/transistor KSP 13 801
Contextual Info: Hi-Rel PLANAR POW ER-2 AMP NPN • ii lll ii TYPE CASE REAKDOWNilllllliH if i VOLTAGES Veb ' VCE 2N 1252 TO-5 VCB 30 2N 1253 TO-5 30 20 2N 1506 60 40 2N 1506A TO-5 TO-5 2N 1714 TO-5 80 60 2N 1716 TO-5 80 90 90 2N 1718 MT-13 90 60 2N 1720 MT-13 90 2N 1889 TO-5