C 129 TRANSISTOR Search Results

Contextual Info: BCR 129 NPN Silicon Digital Transistor Preliminary data • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7kΩ Type Marking Ordering Code Pin Configuration BCR 129 WVs 1=B Q62702- Package 2=E 3=C SOT-23 Maximum Ratings

Contextual Info: BCR 129 NPN Silicon Digital Transistor 3 • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=10kΩ 2 C 3 1 VPS05161 R1 1 2 B E EHA07264 Type Marking BCR 129 WVs Pin Configuration 1=B 2=E Package 3=C SOT-23 Maximum Ratings

ss129

Abstract: transistor marking 7D
Contextual Info: SIPMOS Small-Signal Transistor BSS 129 • Vds • ID • • • • • 240 V 0.15 A ^D S on 2 0 Q N channel Depletion mode High dynamic resistance Available grouped in Vg^ Type Ordering Code Tape and Reel Information Pin C onfigu ration Marking BSS 129 Q62702-S015 E6288:1500 pcs/reel;

MAPHST0034

Abstract: MAPHST MAPHS VCC36 9-GHz c 129 transistor
Contextual Info: MAPHST0034 RADAR PULSED POWER TRANSISTOR 129 WATTS, 2.70-2.90 GHz, 100µs PULSE, 10% DUTY Datasheet 032803 ECRIEE OUTLINE DRAWING FEATURES ∗ NPN Silicon Microwave Power Transistor ∗ Common Base Configuration ∗ Broadband Class C Operation ∗ High Efficiency Interdigitated Geometry

E7941

Abstract: c 129 transistor Q67000-S073 E6327 Q67000-S314 BSP 17 D 21001A
Contextual Info: SIPMOS Small-Signal Transistor ● ● ● ● ● ● ● BSP 129 VDS 240 V ID 0.2 A RDS on 20 Ω N channel Depletion mode High dynamic resistance Available grouped in VGS(th) Type Ordering Code Tape and Reel Information Pin Configuration Marking Package

c 129 transistor

Abstract: transistor c 129 Q67000-S073 SIPMOS E6327 BSP129
Contextual Info: BSP 129 SIPMOS Small-Signal Transistor ● VDS 240 V ● ID 0.2 A ● RDS on 20 Ω ● N channel ● Depletion mode ● High dynamic resistance Type Ordering Code Tape and Reel Information Pin Configuration Marking Package BSP 129 Q67000-S073 E6327: 1000 pcs/reel

SS129

Abstract: Q62702-S015 Q67000-S116
Contextual Info: BSS 129 SIPMOS Small-Signal Transistor ● ● ● ● ● ● ● VDS 240 V ID 0.15 A RDS on 20 Ω N channel Depletion mode High dynamic resistance Available grouped in VGS(th) Type Ordering Code 2 1 Tape and Reel Information 3 Pin Configuration Marking Package

AD143

Abstract: ad148 ASZ1015 Germanium Power Devices
Contextual Info: GERMANIUM POWER TRANSISTORS PRO ELECTRON TYPES CURRENT C A IN at Type Number ^ 1*0 V ^ CEO y Y ebo y max 32 32 32 - 64 64 64 80 80 50 50 50 32 40 40 40 55 22 22 22 55 80 40 32 32 50 50 50 35 26 26 30 30 32 32 100 100 100 A D Y 10 ADY11 A D Y 12 AD Y13 A D Y 20

AD149

Abstract: ASZ18 ASZ15 ASZ1015 ASZ16 ADY26 AD148 ASZ1018 AD133 ASZ17
Contextual Info: GERMANIUM POWER TRANSISTORS PRO ELECTRON TYPES CURRENT C A IN at R. j-case °C !W max Outlines 0.35 0.35 0.35 0.35 0.35 0.35 1.5 1.5 1.5 1.5 1.5 1.5 127 127 127 127 127 127 A D 130— 111 — IV —V A D 131— III — IV — V 1 1 5 5 5 0.35 0.35 0.3 0.3

l 129 v

Abstract: BD129 bd127 128bd bd128 0477A2 BD 127 V2412 127BD TFK BD 128
Contextual Info: BD 127 BD 128 BD 129 'V Silizium-NPN-Planar-Leistungstransistoren Silicon NPN Planar Power Transistors Anwendungen: Allgemein bei hohen Betriebsspannungen Applications: General at high supply voltages Features: Besondere Merkmale: • Hohe Sperrspannung • High reverse voltage

NEC 41-A 002

Abstract: NE333 NE33387 ne33353 NE33300 NE33353B NE33353E
Contextual Info: NEC/ CALIFORNIA NEC SbE T> m 1,427414 0GQE3a2 IT I HNECC NE33300 NE33353E NE33353B NE33387 NPN MEDIUM POWER MICROWAVE TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • 450 mW LINEAR POWER OUTPUT at 2 GHz Com m on-Em ilter The NE333 series o f NPN silico n transistors Is designed for

transformer ferrite core

Abstract: noyau de ferrite N2468 TRANSISTOR 641 transistor BU 110 ferrite core coil 1-10 mH 1-4 A schema d un transistor en thomson ferrite core transistor Bu thomson deflection coil
Contextual Info: BU 129 NPN S ILIC O N T R A N S IS T O R , TR IP L E D IF F U S E D MESA TR A N S IS TO R N P N S IL IC IU M , M ESA T R IP L E D IF F U S E The BU 129 transistor is primarly intended for use in horizontal deflection output stage for 110° • 12" 20 mm neck black and white

KT 819 transistor

Abstract: 2N2222A 338 SF129D SF137D SSY20B KT819W SF127E KFY18 321 KP303W KFY18
Contextual Info: Deutsche Post NfD Studiotechnik Fernsehen Bauelemente - Mitteilung Nr. 6 TRANSISTORVERGLEICHSLISTE Herausgebers Halbleitervergleichsgruppe Studiotechnik Fernsehen Deutsche Post Studiotechnik Fernsehen Bauelemente-Mitteilung Nr. 6 Dez. 79 N f D T r a n s i s t o r v e r g l e i c h s l i s t e

2SA909

Abstract: 2SC1571 805CE 2sa907 274B 2SA908 transistor 2sc 1586
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

R3381

Abstract: R3498 R3381-S a101 transistor BDW85-S buv49 transistor 1015 TIPL763 TIC263D 883 transistor
Contextual Info: CIRCUIT PROTECTION PRODUCTS February, 2006 Bourns Manufacturers Representatives Corporate Distributor Product Managers Americas Sales Team Asia Sales Team Europe Sales Team SOT-93 Packaged Power Transistor & Thyristor Product Change Notification PCN Tracking Number BLBF40 - Mold Compound Change

r3381

Abstract: R3498 buv49 MP150s tipl763 TIC263M transistor BD245 BDW85-S buv48s BD250C-S
Contextual Info: CIRCUIT PROTECTION PRODUCTS February, 2006 Bourns Manufacturers Representatives Corporate Distributor Product Managers Americas Sales Team Asia Sales Team Europe Sales Team SOT-93 Packaged Power Transistor & Thyristor Product Change Notification PCN Tracking Number BLBF40 - Mold Compound Change

Contextual Info: W hü1 H E W L E T T mLttM P A C K A R D NPN Silicon Bipolar Common Emitter Transistor T f e c h n ic a l D a t a AT-38043 Features • Operates Over a Wide Range of Voltages and Frequencies • +25.0 dBm P| d[5 and 60% Collector Efficiency @ 900 MHz, 4.8 Volts, Typ.

Contextual Info: 1 mLttM PACKARD W h ü H E W L E T T NPN Silicon Bipolar Common Emitter Transistor Technical Data AT-38043 Surface Mount Package • Operates Over a Wide Range SOT-343 SC-70 Features • • • • of Voltages and Frequencies +25.0 dBm PldB and 60 % Collector Efficiency @

transistor Z8W

Abstract: s parameters 4ghz 2SC1241 J260 The Transistor Manual 2sa The Transistor Manual 2sa 15 2SA703 "z5w" z8w TRANSISTOR
Contextual Info: 5 - - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSW HE New T ransistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will m ake full use of the data provided in this manual by referring to the Japanese-English

35 micro-X Package MARKING CODE Q

Abstract: BFY420 RF TRANSISTOR NPN MICRO-X Siemens Microwave Micro-X marking "K" low noise Micro-X marking "K"
Contextual Info: BFY420 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For High Gain Low Noise Amplifiers • For Oscillators up to 10 GHz • Noise Figure F = 1.1 dB at 1.8 GHz Outstanding Gms = 21dB at 1.8 GHz • Hermetically sealed microwave package

35 micro-X Package MARKING CODE 3

Abstract: Micro-X marking "K" INFINEON DETAIL marking f infineon GHZ micro-X Package BFY420 S 35 micro-X Package MARKING CODE F 35 micro-X Package MARKING CODE 0 transistor "micro-x" "marking" 3
Contextual Info: BFY420 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor  For High Gain Low Noise Amplifiers  For Oscillators up to 10 GHz  Noise Figure F = 1.1 dB at 1.8 GHz Outstanding Gms = 21dB at 1.8 GHz  Hermetically sealed microwave package

ic sc 6200

Abstract: transistor 2222a data sheet AT-38043 AT-38043-BLK AT-38043-TR1 AT-38043-TR2 at38043blk 38043 sc 6200 ic diagram
Contextual Info: NPN Silicon Bipolar Common Emitter Transistor Technical Data AT-38043 Features • Operates Over a Wide Range of Voltages and Frequencies Surface Mount Package SOT-343 SC-70 Outline 4T • +25.0 dBm P1dB and 60% Collector Efficiency @ 900 MHz, 4.8 Volts, Typ.

TRANSISTOR A107

Abstract: transistor A143 Transistor A119 TRANSISTOR A117 A124 transistor transistor a124 A124
Contextual Info: ARCH I V ED BY FREESCALE SEM I CON DU CT OR, I N C. 2 0 0 5 MOTOROLA Order this document by MRF6522–5/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF6522-5R1 N–Channel Enhancement–Mode Lateral MOSFET

mosfet j142

Abstract: J132 MOSFET MOSFET J132 mosfet J137 7 581 transistor motorola transistor z 0607 MOSFET J147
Contextual Info: MOTOROLA Order this document by MRF6522–5/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF6522-5R1 N–Channel Enhancement–Mode Lateral MOSFET Designed for Class A–AB common source, linear power amplifiers in the