C 111 TRANSISTOR Search Results
C 111 TRANSISTOR Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| BLA1011-300 |
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BLA1011-300 - 300W LDMOS Avionics Power Transistor |
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| 54F151LM/B |
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54F151 - Multiplexer, 1-Func, 8 Line Input, TTL |
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| 93L422ADM/B |
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93L422A - 256 x 4 TTL SRAM |
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| 93425ADM/B |
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93425 - 1K X 1 TTL SRAM |
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| 27S185DM/B |
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27S185 - OTP ROM, 2KX4, 55ns, TTL, CDIP18 |
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C 111 TRANSISTOR Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: LINEAR TECHNOLOGY CORP 43E D • SSlSMbfl 0D051A2 7 « L T C RH1011 ■— T -7 3 -5 3 Voltage C om parator DESCRIPTION ABSOLUTE M A X IM U M RATINGS The RH1011 is a general purpose comparator with significantly better input characteristics than the LM 111. Although pin compatible with the LM 111, it |
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0D051A2 RH1011 RH1011 | |
245A-02Contextual Info: MOTOROLA SC XSTRS/R F 2bE D h3b7254 O Q m M S Ö MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA Discrete Military Products PNP/NPN Silicon Complementary Power Darlington Transistors mo M JM 6052 111/111 (NPN) (PNP) M JM 6059 Suffixes: HX, H X V Processed per |
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h3b7254 MIL-S-19500/ O-116) 245A-02 | |
MOTOROLA 2n2920
Abstract: 2N2920 2N2920JAN
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2N2920JANID 2N2920JAN, S50SS. 1PHW4101 2N292W~ MOTOROLA 2n2920 2N2920 2N2920JAN | |
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Contextual Info: KSR2111 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION B ias R esistor Built In • Sw itching circuit, Inverter, Interface circuit, D river C ircuit • Built in bias R esistor (R=22K£1) • C om plem ent to K S R 1 111 S O T-23 ABSOLUTE MAXIMUM RATINGS (TA=25°C) |
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KSR2111 | |
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Contextual Info: Low Voltage Regulators IV I BA704 BA707 111 Nfïl Dimensions Unit: mm 4.0 =0.2 V C .6 C = Voltage Fig. 1 Block Diagram OUTPUT —O Features 1. 2. 3. 4. 5. 6. Wide input voltage range. Excellent line regulation. Excellent load regulation. Excellent temperature stability. |
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BA704 BA707 BA707 BA707â | |
TIP110
Abstract: 2A 80v complementary transistor TIP110 transistor TIP11 TIP111 TIP112 lc 112
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TIP110/111/112 TIP115/116/117 O-220 TIP110 TIP111 TIP112 -TIP11 2A 80v complementary transistor TIP110 transistor TIP11 TIP111 TIP112 lc 112 | |
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Contextual Info: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP115/116/117 HIGH DC CURRENT GAIN MIN hFE=1000 @ VCE= -4V, lc= -1A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE C om plem entary to T IP 1 10/111/112 |
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TIP115/116/117 TIP115 TIP117 TIP116 | |
TIP115
Abstract: TIP117 TIP116 2A 80v complementary transistor 60V transistor npn 2a
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TIP115/116/117 TIP110/111/112 O-220 TIP115 TIP116 TIP117 Temperatu-10V, TIP117 TIP116 2A 80v complementary transistor 60V transistor npn 2a | |
TIP NPN
Abstract: TIP110 TIP111 TIP112 TIP115 TIP116 TIP117 tip 115
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TIP110, TIP111, TIP112 TIP115, TIP116, TIP117 TIP NPN TIP110 TIP111 TIP115 TIP116 TIP117 tip 115 | |
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Contextual Info: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP110/111/112 HIGH DC CURRENT GAIN MIN hFE =1000 @ V ce = 4V, I c =1A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE TO-220 Com plem ent to TIP115/116/117 |
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TIP110/111/112 TIP115/116/117 O-220 | |
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Contextual Info: PNP EPITAXIAL TIP115/116/117 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000 @ VCE= -4V, lc= -1A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE • C om plem entary to T IP 1 10/111/112 |
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TIP115/116/117 TIP115 | |
T1P112
Abstract: T1P111
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TIP110, TIP111, TIP112 TIP115, TIP116, TIP117 23633T4 T1P112 T1P111 | |
sil1364
Abstract: PZ4782K am4825p ITE8512F fds8884 G784P81U IT8305E G545B1P8U Inventec M11D Santa Rosa
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120ohm 200mA 15ohm 20mil 10mil sil1364 PZ4782K am4825p ITE8512F fds8884 G784P81U IT8305E G545B1P8U Inventec M11D Santa Rosa | |
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Contextual Info: NPN EPITAXIAL TIP110/111/112 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000 @ V ce=4V, lc=1 A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE • C om plem entary to T IP 1 15/116/117 |
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TIP110/111/112 TIP110 | |
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Contextual Info: NPN EPITAXIAL TIP110/111/112 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000 @ V ce=4V, lc=1 A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE • C om plem entary to T IP 1 15/116/117 |
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TIP110/111/112 TIP110 | |
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Contextual Info: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP115/116/117 HIGH DC CURRENT GAIN MIN hFE= 1000 @ V c e = — 4V, lc = - 1 A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE TO-220 Com plem ent to TIP110/111/112 |
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TIP115/116/117 TIP110/111/112 O-220 | |
MPQ2907
Abstract: c-300mA MPQ2906 1-B215
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MPQ2906 MPQ2907 O-116 MPQ2906, MPQ2907 150mA, 300mA, MPQ2906) MPQ2907) c-300mA 1-B215 | |
144111P
Abstract: MC144110-MC144111 144110P
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MC144111 MC144110/D 144111P MC144110-MC144111 144110P | |
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Contextual Info: BCX54 BCX55 BCX56 SOT89 NPN SILICON PLANAR M EDIUM POWER TRANSISTORS ISSU E 3 - FEBRUARY 1996 O % PARTM ARKING DETAILS:BCX54 - BA BCX54-10 - BC BCX55 - BE BCX55-10 - BG BCX56 - BH BCX56-10 - BK BCX54-16 - BD BCX55-16 - BM BCX56-16 - BL 111 C O M PLEM EN TA RY TYPES:BCX54 - BCX51 |
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BCX54 BCX55 BCX56 BCX54 BCX54-10 BCX55 BCX55-10 BCX56 BCX56-10 BCX54-16 | |
BU140
Abstract: bc140 BC140-10 BC141 BC141-16 BC140-16 BC141-10 BC-141 BC160 BC161
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Q27SD7 BU140 BC141 BC160 BC161. BC140 BC140-10 BC140-16 BC141-10 BC141 BC141-16 BC140-16 BC-141 BC161 | |
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Contextual Info: SbE D • 303DbD^ 0Ü D llfl3 .050" NPN Phototransistors HVCT VTT 111 2, 13, 14 TO-46 Lensed Package E TES G 8. G V A C T E C T—47—67 PACKAGE DIMENSIONS inch mm CASE 3 PRODUCT DESCRIPTION T0-4G HERMETIC (LENSED) CHIP TYPE: 50T ABSOLUTE MAXIMUM RATINGS ■ |
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303DbD^ VTT1112 VTT1113 VTT1114 | |
2N2680
Abstract: 2N2877 2N2878 2N2879 2N2880 STA8450 STA8451 STA8452 STA9450 STA9451
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O-111 2N2877 2N2878 2N2879 2N2880 STA8550 STA9550 STA9551 STA9552 2N2680 2N2880 STA8450 STA8451 STA8452 STA9450 STA9451 | |
OPA111
Abstract: OPA111AIH OPA111AMH OPA111BIH OPA121 OPA121ACH OPA121BCP
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OPA111/121 OPA111AIH OPA111AMH OPA111AMH/883 OPA111BIH OPA121ACH OPA121BCP OPA111 OPA111AIH OPA111AMH OPA111BIH OPA121 OPA121ACH OPA121BCP | |
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Contextual Info: N AMER PHILIPS/DISCRETE b=!E » bb53T31 0027507 111 BC140 BC141 IAPX SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in TO-39 metal envelopes for general purpose applications. P-N-P complements are BC160 and BC161. Q U IC K R E F E R E N C E D A T A |
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bb53T31 BC140 BC141 BC160 BC161. BC140-10 BC141-10 BC140-16 | |