C 111 TRANSISTOR Search Results

Contextual Info: Low Voltage Regulators IV I BA704 BA707 111 Nfïl Dimensions Unit: mm 4.0 =0.2 V C .6 C = Voltage Fig. 1 Block Diagram OUTPUT —O Features 1. 2. 3. 4. 5. 6. Wide input voltage range. Excellent line regulation. Excellent load regulation. Excellent temperature stability.

Contextual Info: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP115/116/117 HIGH DC CURRENT GAIN MIN hFE=1000 @ VCE= -4V, lc= -1A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE C om plem entary to T IP 1 10/111/112

TIP NPN

Abstract: TIP110 TIP111 TIP112 TIP115 TIP116 TIP117 tip 115
Contextual Info: TIP110, TIP111, TIP112 TIP115, TIP116, TIP117 TIP 110, 111, 112 TIP 115,116,117 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS General Purpose Darlington Amplifier and Low Speed Switching Applications DIM A B C D E F G H J K L U N MIN MAX 16.51

Contextual Info: PNP EPITAXIAL TIP115/116/117 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000 @ VCE= -4V, lc= -1A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE • C om plem entary to T IP 1 10/111/112

Contextual Info: NPN EPITAXIAL TIP110/111/112 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000 @ V ce=4V, lc=1 A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE • C om plem entary to T IP 1 15/116/117

Contextual Info: NPN EPITAXIAL TIP110/111/112 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000 @ V ce=4V, lc=1 A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE • C om plem entary to T IP 1 15/116/117

144111P

Abstract: MC144110-MC144111 144110P
Contextual Info: MOTOROLA O rd e r th is d o c u m e n t by M C 14 411 0/D SEMICONDUCTOR TECHNICAL DATA D igital-to-A nalog Converters w ith Serial In terface M C 144110 M C 144 111 CMOS LSI T he M C 144110 and MC144111 are lo w -c o s t 6 - b it D/A con verters with serial

2N2680

Abstract: 2N2877 2N2878 2N2879 2N2880 STA8450 STA8451 STA8452 STA9450 STA9451
Contextual Info: Silicon power transistors NPN T O -111 hpE @ Ic /V c E V ceoisusj Type# Volts (Min-Max @ A/V) VcE(SAT) @ Ic / U (V @ A/A) @ Ic /V c E ICEV @ V et (V @ A/V) (mA @ V) V be fT = 30 to 50 MHz Vceo(susi — 50 to 350V = 5 to 10A lc (M A X ] ls/b @ VcE Pd @ t = 1sec

Contextual Info: N AMER PHILIPS/DISCRETE b=!E » bb53T31 0027507 111 BC140 BC141 IAPX SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in TO-39 metal envelopes for general purpose applications. P-N-P complements are BC160 and BC161. Q U IC K R E F E R E N C E D A T A

GSC1118

Abstract: SC111
Contextual Info: ISSUED DATE :2005/07/11 REVISED DATE :2005/10/04B G S C 111 8 1A Positive Low Dropout Fixed-mode Regulator With EN Function Description The GSC1118 is a low dropout positive fixed-mode regulator with minimum of 1A output current capability. The product is specifically

superscalar architecture of pentium processor

Contextual Info: PENTIUM PROCESSOR Max. Operating Frequency 75 MHz 90 MHz 100 MHz 120 MHz 133 MHz 150 MHz 166 MHz 200 MHz 67 81 90 100 111 114 127 142 iCOMP® Index 2.0 Rating N ote: C ontact Intel C orporation fo r more inform ation about iCOM F^Index 2.0 ratings. Compatible with Large Software Base

MPF111

Contextual Info: MPF 111 SILICON SILICON N-CHANNEL JUNCTION F IE L D -E F F E C T TRANSISTOR D e p le tio n M ode N-CHANNEL JUNCTION F IE LD -E F FE C T TRANSISTOR device designed fo r general-purpose a m p lifie r and s w itc h in g ap p lic a tio n s . • L o w T ra n s fe r C apacitance — C rss = 1.5 pF (T y p ) @ V q s = 10 V d c

2N4115

Abstract: 2N4116 2N5002 2N5004 2N5083 2N5084 2N5085 2N5284 2N5285 2N5346
Contextual Info: llP NPMTO-111 ^ 84aa_^ 2 D I Q D E ISOlaledcnllBntn.-ltenn.-rt' l a f l H B 3 S E TRANSISTOR GO I N C . Ö4D 0G0Q13S □ I 00128 ^— — — t D1DDE TRANSISTOR CQ.J(\IC. FAX ^201^6755883 139-385 * 0u,8lde NV 4 NJ area ca|l T O LL FR EE 800-526-4581 PNP

AD149

Abstract: ASZ18 ASZ15 ASZ1015 ASZ16 ADY26 AD148 ASZ1018 AD133 ASZ17
Contextual Info: GERMANIUM POWER TRANSISTORS PRO ELECTRON TYPES CURRENT C A IN at R. j-case °C !W max Outlines 0.35 0.35 0.35 0.35 0.35 0.35 1.5 1.5 1.5 1.5 1.5 1.5 127 127 127 127 127 127 A D 130— 111 — IV —V A D 131— III — IV — V 1 1 5 5 5 0.35 0.35 0.3 0.3

Contextual Info: E SI I S 2 2 C 111 8 to 12 SEC VOICE ROM ADVANCE INFORMATION FEBRUARY 1997 FEATURES • Voice length at: - 8 KHz sampling is 8 seconds - 6 KHz sampling is 10 seconds - 5 KHz sampling is 12.8 seconds • Silence compression saves memory • Four trigger pins, S1 to S4 for eight sections

PS2016B

Abstract: HP 2531 ic ps2016b PS2741 PS2016 H2525 PS2041 TLP112A 4534 PC417
Contextual Info: — 250— LED-Photo Diode Buffered by Transistor L E D - 7 t h rn L m m n ft I r * 111 2 01 ft *,‘i TLP112 # tt * € 2 T L P 112A If max mA) 25 * Vr max (V ) 5 -c 1HJ ft ;* Po 1 max (mW) 45 VCE max (V ) Vcc* 15 P dz IOL max max (m A ) (mW) 8 100 £

Contextual Info: T E X A S I N S T R U M E N T S - P R O D U C T I ON D ATA Stellaris LM3S5732 Microcontroller DATA SH E E T DS - LM 3S 5732 -111 0 7 C opyri ght 200 7- 2011 Texas Instruments Incorpor at ed Copyright Copyright © 2007-2011 Texas Instruments Incorporated All rights reserved. Stellaris® and StellarisWare® are registered trademarks of Texas Instruments

Contextual Info: T E X A S I N S T R U M E N T S - P R O D U C T I ON D ATA Stellaris LM3S3748 Microcontroller DATA SH E E T DS - LM 3S 3748 -111 0 7 C opyri ght 200 7- 2011 Texas Instruments Incorpor at ed Copyright Copyright © 2007-2011 Texas Instruments Incorporated All rights reserved. Stellaris® and StellarisWare® are registered trademarks of Texas Instruments

Contextual Info: T E X A S I N S T R U M E N T S - P R O D U C T I ON D ATA Stellaris LM3S5762 Microcontroller DATA SH E E T DS - LM 3S 5762 -111 0 7 C opyri ght 200 7- 2011 Texas Instruments Incorpor at ed Copyright Copyright © 2007-2011 Texas Instruments Incorporated All rights reserved. Stellaris® and StellarisWare® are registered trademarks of Texas Instruments

Contextual Info: T E X A S I N S T R U M E N T S - P R O D U C T I ON D ATA Stellaris LM3S1627 Microcontroller DATA SH E E T DS - LM 3S 1627 -111 0 7 C opyri ght 200 7- 2011 Texas Instruments Incorpor at ed Copyright Copyright © 2007-2011 Texas Instruments Incorporated All rights reserved. Stellaris® and StellarisWare® are registered trademarks of Texas Instruments

Contextual Info: T E X A S I N S T R U M E N T S - P R O D U C T I ON D ATA Stellaris LM3S1626 Microcontroller DATA SH E E T DS - LM 3S 1626 -111 0 7 C opyri ght 200 7- 2011 Texas Instruments Incorpor at ed Copyright Copyright © 2007-2011 Texas Instruments Incorporated All rights reserved. Stellaris® and StellarisWare® are registered trademarks of Texas Instruments

Contextual Info: T E X A S I N S T R U M E N T S - P R O D U C T I ON D ATA Stellaris LM3S5632 Microcontroller DATA SH E E T DS - LM 3S 5632 -111 0 7 C opyri ght 200 7- 2011 Texas Instruments Incorpor at ed Copyright Copyright © 2007-2011 Texas Instruments Incorporated All rights reserved. Stellaris® and StellarisWare® are registered trademarks of Texas Instruments

Contextual Info: T E X A S I N S T R U M E N T S - P R O D U C T I ON D ATA Stellaris LM3S5652 Microcontroller DATA SH E E T DS - LM 3S 5652 -111 0 7 C opyri ght 200 7- 2011 Texas Instruments Incorpor at ed Copyright Copyright © 2007-2011 Texas Instruments Incorporated All rights reserved. Stellaris® and StellarisWare® are registered trademarks of Texas Instruments

Contextual Info: T E X A S I N S T R U M E N T S - P R O D U C T I ON D ATA Stellaris LM3S3749 Microcontroller DATA SH E E T DS - LM 3S 3749 -111 0 7 C opyri ght 200 7- 2011 Texas Instruments Incorpor at ed Copyright Copyright © 2007-2011 Texas Instruments Incorporated All rights reserved. Stellaris® and StellarisWare® are registered trademarks of Texas Instruments