C 111 TRANSISTOR Search Results

Contextual Info: LINEAR TECHNOLOGY CORP 43E D • SSlSMbfl 0D051A2 7 « L T C RH1011 ■— T -7 3 -5 3 Voltage C om parator DESCRIPTION ABSOLUTE M A X IM U M RATINGS The RH1011 is a general purpose comparator with significantly better input characteristics than the LM 111. Although pin compatible with the LM 111, it

245A-02

Contextual Info: MOTOROLA SC XSTRS/R F 2bE D h3b7254 O Q m M S Ö MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA Discrete Military Products PNP/NPN Silicon Complementary Power Darlington Transistors mo M JM 6052 111/111 (NPN) (PNP) M JM 6059 Suffixes: HX, H X V Processed per

MOTOROLA 2n2920

Abstract: 2N2920 2N2920JAN
Contextual Info: MOTOROU Order this document by 2N2920JANID SEMICONDUCTOR TECHNICAL DATA @ 2N2920JAN, JTX, JTXV, JANS Processed per MIL4-I ,111, t ,11111 411 .,.:,>$’ \.>.l , c*\~ ~!.?,:$,! a- 9500/355 ual N,PNSilicon Small+ ignal Transistors .!. 3 Unit Vdc Vdo VEBO Emitter+ase Vohge

Contextual Info: KSR2111 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION B ias R esistor Built In • Sw itching circuit, Inverter, Interface circuit, D river C ircuit • Built in bias R esistor (R=22K£1) • C om plem ent to K S R 1 111 S O T-23 ABSOLUTE MAXIMUM RATINGS (TA=25°C)

Contextual Info: Low Voltage Regulators IV I BA704 BA707 111 Nfïl Dimensions Unit: mm 4.0 =0.2 V C .6 C = Voltage Fig. 1 Block Diagram OUTPUT —O Features 1. 2. 3. 4. 5. 6. Wide input voltage range. Excellent line regulation. Excellent load regulation. Excellent temperature stability.

TIP110

Abstract: 2A 80v complementary transistor TIP110 transistor TIP11 TIP111 TIP112 lc 112
Contextual Info: NPN EPITAXIAL TIP110/111/112 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000 @ VCe=4V, lc=1A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE • C om plem entary to T IP 1 15/116/117

Contextual Info: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP115/116/117 HIGH DC CURRENT GAIN MIN hFE=1000 @ VCE= -4V, lc= -1A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE C om plem entary to T IP 1 10/111/112

TIP115

Abstract: TIP117 TIP116 2A 80v complementary transistor 60V transistor npn 2a
Contextual Info: PNP EPITAXIAL TIP115/116/117 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000 @ VCE= -4V, lc= -1A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE • C om plem entary to T IP 1 10/111/112

TIP NPN

Abstract: TIP110 TIP111 TIP112 TIP115 TIP116 TIP117 tip 115
Contextual Info: TIP110, TIP111, TIP112 TIP115, TIP116, TIP117 TIP 110, 111, 112 TIP 115,116,117 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS General Purpose Darlington Amplifier and Low Speed Switching Applications DIM A B C D E F G H J K L U N MIN MAX 16.51

Contextual Info: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP110/111/112 HIGH DC CURRENT GAIN MIN hFE =1000 @ V ce = 4V, I c =1A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE TO-220 Com plem ent to TIP115/116/117

Contextual Info: PNP EPITAXIAL TIP115/116/117 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000 @ VCE= -4V, lc= -1A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE • C om plem entary to T IP 1 10/111/112

T1P112

Abstract: T1P111
Contextual Info: TIP110, TIP111, TIP112 TIP115, TIP116, TIP117 TIP 110, 111, 112 TIP 115,116,117 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS General Purpose Darlington Amplifier and Low Speed Switching Applications DIM A B C D E F G H J K L M N MIN MAX 16.51

sil1364

Abstract: PZ4782K am4825p ITE8512F fds8884 G784P81U IT8305E G545B1P8U Inventec M11D Santa Rosa
Contextual Info: 5 4 3 2 1 D D Inventec Corporation R&D Division C C Board name : Mother Board Schematic Project : M11D Santa Rosa Version : 0.1 Initial Date : March 22 , 2007 B B A A Inventec Corporation <OrgAddr4> Inventec Buliding,66 Hou-Kang Stree Shin-Lin District, Taipei 111, Taiwan

Contextual Info: NPN EPITAXIAL TIP110/111/112 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000 @ V ce=4V, lc=1 A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE • C om plem entary to T IP 1 15/116/117

Contextual Info: NPN EPITAXIAL TIP110/111/112 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000 @ V ce=4V, lc=1 A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE • C om plem entary to T IP 1 15/116/117

Contextual Info: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP115/116/117 HIGH DC CURRENT GAIN MIN hFE= 1000 @ V c e = — 4V, lc = - 1 A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE TO-220 Com plem ent to TIP110/111/112

MPQ2907

Abstract: c-300mA MPQ2906 1-B215
Contextual Info: Data Sheet MPQ2906 MPQ2907 PNP S IL IC O N QUAD TRANSISTOR S e m ic o n d u c to r C o rp . 145 Adams Ave., Hauppauge, N Y 11788 USA Phone 516 435-111 0 JEDEC T O - 116 CASE FAX (516) 4 3 5 -1 8 2 4 Manufacturers of World Class Discrete Semiconductors DESCRIPTION

144111P

Abstract: MC144110-MC144111 144110P
Contextual Info: MOTOROLA O rd e r th is d o c u m e n t by M C 14 411 0/D SEMICONDUCTOR TECHNICAL DATA D igital-to-A nalog Converters w ith Serial In terface M C 144110 M C 144 111 CMOS LSI T he M C 144110 and MC144111 are lo w -c o s t 6 - b it D/A con verters with serial

Contextual Info: BCX54 BCX55 BCX56 SOT89 NPN SILICON PLANAR M EDIUM POWER TRANSISTORS ISSU E 3 - FEBRUARY 1996 O % PARTM ARKING DETAILS:BCX54 - BA BCX54-10 - BC BCX55 - BE BCX55-10 - BG BCX56 - BH BCX56-10 - BK BCX54-16 - BD BCX55-16 - BM BCX56-16 - BL 111 C O M PLEM EN TA RY TYPES:BCX54 - BCX51

BU140

Abstract: bc140 BC140-10 BC141 BC141-16 BC140-16 BC141-10 BC-141 BC160 BC161
Contextual Info: N AUER b*iE ]> PHILIPS/DISCRETE • bbSBTBl ÜQ27SD7 A 111 BU140 BC141 SILICO N PLANAR EPITAXIAL T R A N SIST O R S N-P-N transistors in TO -39 metal envelopes for general purpose applications. P-N-P complements are B C 16 0 and BC161. Q U IC K R E F E R E N C E D A T A

Contextual Info: SbE D • 303DbD^ 0Ü D llfl3 .050" NPN Phototransistors HVCT VTT 111 2, 13, 14 TO-46 Lensed Package E TES G 8. G V A C T E C T—47—67 PACKAGE DIMENSIONS inch mm CASE 3 PRODUCT DESCRIPTION T0-4G HERMETIC (LENSED) CHIP TYPE: 50T ABSOLUTE MAXIMUM RATINGS ■

2N2680

Abstract: 2N2877 2N2878 2N2879 2N2880 STA8450 STA8451 STA8452 STA9450 STA9451
Contextual Info: Silicon power transistors NPN T O -111 hpE @ Ic /V c E V ceoisusj Type# Volts (Min-Max @ A/V) VcE(SAT) @ Ic / U (V @ A/A) @ Ic /V c E ICEV @ V et (V @ A/V) (mA @ V) V be fT = 30 to 50 MHz Vceo(susi — 50 to 350V = 5 to 10A lc (M A X ] ls/b @ VcE Pd @ t = 1sec

OPA111

Abstract: OPA111AIH OPA111AMH OPA111BIH OPA121 OPA121ACH OPA121BCP
Contextual Info: C ir w a y 0 PA 111/121 V th A J i SIGNAL PROCESSING EXCEUJSNCE PRECISION OPERATIONAL AMPLIFIER PRELIMINARY SPECIFICATIONS FEATURES/BENEFITS * * * * * * Low noise Low input bias current Low input offset voltage Low drift [jjaji conimon-modfi rsjcction High open-loop gain

Contextual Info: N AMER PHILIPS/DISCRETE b=!E » bb53T31 0027507 111 BC140 BC141 IAPX SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in TO-39 metal envelopes for general purpose applications. P-N-P complements are BC160 and BC161. Q U IC K R E F E R E N C E D A T A