BYW42 Search Results

Contextual Info: BYW4200B -TR  HIGH EFFICIENCY FAST RECOVERY DIODES MAIN PRODUCT CHARACTERISTICS IF(AV) 4A VRRM VF (max) 200 V 0.85 V PRELIMINARY DATASHEET 2 3 4 (TAB) FEATURES AND BENEFITS 4 SUITED TO SMPS AND DRIVES SURFACE MOUNT PACKAGE VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES

BYW4200B

Contextual Info: BYW4200B -TR  HIGH EFFICIENCY FAST RECOVERY DIODES MAIN PRODUCT CHARACTERISTICS IF(AV) 4A VRRM 200 V VF (max) 0.85 V PRELIMINARY DATASHEET 2 3 4 (TAB) FEATURES AND BENEFITS 4 SUITED TO SMPS AND DRIVES SURFACE MOUNT PACKAGE VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES

BYW4200B

Contextual Info: BYW4200B -TR HIGH EFFICIENCY FAST RECOVERY DIODE MAIN PRODUCT CHARACTERISTICS IF(AV) 4A VRRM 200 V VF (max) 0.85 V 2 3 4 (TAB) FEATURES AND BENEFITS 4 SUITED TO SMPS AND DRIVES SURFACE MOUNT PACKAGE VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY

W4200

Abstract: BYW4200B BYW4200B-RL SMBYW04-200
Contextual Info: SMBYW04-200 BYW4200B HIGH EFFICIENCY FAST RECOVERY DIODE MAIN PRODUCT CHARACTERISTICS IF AV 4A VRRM 200 V VF (max) 0.85 V Tj (max) 150 °C 2 3 4 (TAB) 4 FEATURES AND BENEFITS SUITED TO SMPS AND DRIVES SURFACE MOUNT PACKAGE VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES

w4200

Abstract: d marking code dpak transistor diode ed 4c BYW4200B BYW4200B-RL SMBYW04-200
Contextual Info: SMBYW04-200 BYW4200B HIGH EFFICIENCY FAST RECOVERY DIODE MAIN PRODUCT CHARACTERISTICS IF AV 4A VRRM 200 V VF (max) 0.85 V Tj (max) 150 °C 2 4 (TAB) 3 4 FEATURES AND BENEFITS SUITED TO SMPS AND DRIVES SURFACE MOUNT PACKAGE VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES

W4200

Abstract: BYW4200B BYW4200B-RL SMBYW04-200
Contextual Info: SMBYW04-200 BYW4200B  HIGH EFFICIENCY FAST RECOVERY DIODE MAIN PRODUCT CHARACTERISTICS IF AV VRRM 4A 200 V VF (max) 0.85 V Tj (max) 150 °C 2 3 4 (TAB) 4 FEATURES AND BENEFITS SUITED TO SMPS AND DRIVES SURFACE MOUNT PACKAGE VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES

E81734

Abstract: BYW series BYT16P-400 BYW29G-200 BYW4200B BYW51G-200 BYW77G-200 SMBYW01-200 SMBYW02-200 STPR1020CB
Contextual Info: POWER RECTIFIERS ULTRAFAST DIODES SMA SMB SMC D2PAK DPAK SURFACE MOUNT ULTRAFAST RECTIFIERS Voltage max Current 1 Amp 2 Amps 4 Amps 200 Volts 400 Volts 8 Amps 2 x 5 Amps 2 x 8 Amps 2 x 10 Amps 25 Amps 1 Amp 3 Amps 30 Amps Part Number VF (max) (*) @ rated current

powerdi 123

Abstract: ES1D SMA ES1D DIODE 600V Ultrafast Diode DPAK BYW42 DFLR1600 es1d st STPR120A DPak Package size PDU620
Contextual Info: New Product Announcement June 30, 2006 Announcing Expansions of our Popular PowerDITM5 and PowerDITM123 Product Lines into Ultra-Fast and Standard Recovery Rectifiers PowerDITM5 PowerDITM123 Package Cross Sections Diodes, Inc.’s patent-pending flat lead frame heat-sink solder pad results in higher power

BYW19-1000

Abstract: BYX49-600 BYX49-1200 BYV72E-200 RS8MT byx49 BY229-1000 UNITRODE CROSS BYT29-300 BYV72-200
Contextual Info: 41892.6 - FO-012 CROSSREF 11/19/98 10:54 AM Page 1 Harris Semiconductor-An Industry Leader For More Information: Harris Semiconductor comprises one sector of Harris Harris Marketing Support and ask for extension #7820

MUR1560 equivalent

Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
Contextual Info: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in

1n5822 trr

Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Contextual Info: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

OZ 9983

Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Contextual Info: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —

Diode 1N4007 DO-7 Rectifier Diode

Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
Contextual Info: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced

CTX12SL

Abstract: CTX12S CTX-12SL STPS1045CT RS8KT MBR020 BYT30P-600 RS8DT FMS-3FU BYT01-200
Contextual Info: CROSS REFERENCE POWER RECTIFIERS INDUSTRY STANDARD 10BF10 10BF100 10BF20 10BF40 10BF60 10BF80 10BQ015 10BQ040 10BQ060 10BQ100 10CTF30 10CTF40 10CTQ150 10CTQ150S 10DL2C41A 10DL2CZ47A 10GWJ2CZ47C 10MF2 10MQ040 10MQ060 10MQ090 10TQ035 10TQ045 11DF1 11DF2 11DF4

CTX12S

Abstract: CTX12SL BYV255-200 W210PIV400 SCHOTTKY BARRIER RECTIFIER 40A 15V MBR4015LWT smd schottky diode A2 SOD-123 BYV10-40 PSpice W210PIV-400 shottky barrier diode 100V 100A BYV52-200 equivalent
Contextual Info: STMicroelectronics The world’s third largest microchip manufacturer. RECTIFIERS Designers Selection Guide USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED. STMicroelectronics PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

stpr16

Abstract: MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode
Contextual Info: MURB1620CT Preferred Device SWITCHMODE Power Rectifier D2PAK Power Surface Mount Package Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • • • •

b2545 transistor

Abstract: TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface
Contextual Info: MBR2535CT, MBR2545CT MBR2545CT is a Preferred Device SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection

MR2835S equivalent

Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
Contextual Info: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected

BYW series

Abstract: to220 1200 piv 1 amps STTA112U byt260piv BYT30PI1000 BYV255V200 BYV52 SMBYT03-400 STTA312B
Contextual Info: POWER RECTIFIERS ULTRAFAST DIODES # SM A SMB SM C DPAK D2PAK SURFACE MOUNT ULTRAFAST RECTIFIERS Voltage max 200 Volts 400 Volts Current Part Number VF (max) (*) @ rated current trr (ns) (max) (&) Tj (max) (Amps) 1 Amp STPR120A 0.71 35 150 60 SMBYW01-200

Contextual Info: S M B Y W 0 4 -2 0 0 B YW 4200B _ HIGH EFFICIEN CY FAST RECO VERY DIODE MAIN PRODUCT CHARACTERISTICS I f a v 4A V rrm 200 V V f (max) 0.85 V Tj (max) 150 °C FEATURES AND BENEFITS • ■ ■ ■ ■ SUITED TO SMPS AND DRIVES SURFACE MOUNT PACKAGE

MUR1560 equivalent

Abstract: 1N4936 equivalent MUR1100E equivalent 1N5404 equivalent MUR620CT equivalent mur420 equivalent MUR1620CT equivalent BYV19-45 MUR1660CT equivalent MUR1520 equivalent
Contextual Info: Index and Cross Reference The following table represents an index and cross reference guide for all rectifier devices which are either manufactured directly by ON Semiconductor or for which ON Semiconductor manufactures a suitable equivalent. Where the ON

mur1650

Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
Contextual Info: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and

transistor U1620R

Abstract: fast recovery diode ses5001 MUR1620CT equivalent PK MUR 460 DIODE PK MUR 460 transistor mbr4045pt 1N2069 MBRD360 Fast Recovery Diode, 24 Amperes, 600 Volts, Button Type STPS20h100
Contextual Info: MUR1620CTR Preferred Device SWITCHMODE Dual Ultrafast Power Rectifier . . . designed for use in negative switching power supplies, inverters and as free wheeling diodes. Also, used in conjunction with common cathode dual Ultrafast Rectifiers, makes a single phase full–wave

A14F diode

Abstract: DIODE marking ES2D V352 DC "Transient Voltage Suppressor" diode A14A rg3j 005 SR1002 0010C 357D-01 1N2069
Contextual Info: MURS220T3 Preferred Device Surface Mount Ultrafast Power Rectifiers Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system.