BYW SERIES Search Results

IC JRC 1038

Abstract: A 3150 V BYW77100
Contextual Info: Back to Ultra Fast Rectifiers NES701 N E S7 0 2 N E S7 0 3 BYW 31-50 BYW 31-100 BYW 31-150 BYW 77-50 BYW 77-100 BYW 77-150 RECTIFIERS High Efficiency, 25 A DESCRIPTION Designed to meet the efficiency demand of switching type power supplies, these devices are useful in many switching

46R2S

Abstract: r2s30 FR76 BYW 26 Thomson-CSF plastic diodes FR79 36R2S diodes byw CASA10 R83HZ
Contextual Info: controlled avalanche rectifier diodes diodes de redressement à avalanche contrôlée Types 3A •o VRRM A (V) / Tam|) = 80 °C BYW BYW BYW BYW 18- 400 18- 600 18- 800 18-1000 3 Tj = 150°C 400 600 800 1000 PRSM vF ^ V(BR)R @ Ir = 100mA 10 fiS JT. (V) (V)

byw 150

Abstract: diode byw 81 200 diode BYW 66 BYW29 JESD22-B102D J-STD-002B
Contextual Info: BYW F,B 29-50 thru BYW(F,B)29-200 Vishay General Semiconductor Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time ITO-220AC TO-220AC • Low switching losses, high efficiency • Low forward voltage drop 2 BYW29 Series

byw 04-15

Abstract: BYW29 JESD22-B102D J-STD-002B byw 91-4
Contextual Info: BYW F,B 29-50 thru BYW(F,B)29-200 Vishay General Semiconductor Ultrafast Rectifier FEATURES • Glass passivated chip junction ITO-220AC TO-220AC • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop 2 BYW29 Series

byw 150

Contextual Info: BYW F,B 29-50 thru BYW(F,B)29-200 Vishay General Semiconductor Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time ITO-220AC TO-220AC • Low switching losses, high efficiency • Low forward voltage drop 2 BYW29 Series

Contextual Info: BYW F,B 29-50 thru BYW(F,B)29-200 Vishay General Semiconductor Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability

diode BYW 66

Abstract: BYW29 JESD22-B102 J-STD-002 BYW29-200-E3 byw 91-4
Contextual Info: BYW F,B 29-50 thru BYW(F,B)29-200 Vishay General Semiconductor Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability

byw 91-4

Abstract: BYW series byw29
Contextual Info: BYW F,B 29-50 thru BYW(F,B)29-200 Vishay General Semiconductor Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability

Contextual Info: BYW F,B 29-50 thru BYW(F,B)29-200 Vishay General Semiconductor Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability

BYW295

Contextual Info: BYW F,B 29-50 thru BYW(F,B)29-200 Vishay General Semiconductor Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability

BYW29

Abstract: JESD22-B102 J-STD-002
Contextual Info: BYW F,B 29-50 thru BYW(F,B)29-200 Vishay General Semiconductor Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability

ultra fast recovery diodes

Abstract: BYW series
Contextual Info: BYW 30 SERIES _ ULTRA FAST RECOVERY RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in DO-4 metal envelopes, featuring low forward voltage drop, ultra fast reverse recovery times, very low stored charge and soft recovery

BYW29

Abstract: BYW29-100 BYW29-150 BYW29-50 UES1401 UES1402 UES1403 es1403
Contextual Info: RECTIFIERS BYW29-50 UES1401 BYW29-100 UES1402 BYW 29-150 UES1403 High Efficiency, 7A and 8A DESCRIPTION The B YW 29/U ES1400 Series, in a plastic package sim ilar to the T0-220, is specifically designed for operation in power switching circuits to frequencies in excess of lOOKHz.

Contextual Info: E5E D N AMER P H IL IP S/ D IS CR ET E H •" ” ~ b b SETB l _ ii O O EETST b ■ BYW 30 SERIES A 7^ <33-/7 ULTRA FAST RECOVERY RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in DO-4 metal envelopes, featuring low

BYW29 diode rectifier

Abstract: BYW29 TMF-3 TU-31
Contextual Info: BYW 29 SERIES _ PHILIPS INT ERN AT IO NAL 5 bE D • 7 1 1 DfiSb 0 0 4 1 S 4 4 mb HIPH IN T -Ô 3 " 1 7 ULTRA FAST RECOVERY RECTIFIER DIODES Glass-passivated, h igh-efficien cy ep itaxial re c tifie r diodes in plastic envelopes, featu rin g lo w fo rw a rd

Contextual Info: BYW 29 SERIES _ U L T R A F A S T R E C O V E R Y R E C TIFIE R D IO D E S Glass-passivated, hig h -e fficie n cy e p ita xia l re c tifie r diodes in plastic envelopes, fe aturing low fo rw a rd voltage dro p , u ltra fast reverse recovery tim es w ith very low stored charge and soft-recovery

diode BYW 85

Abstract: BYW 70 BYW25-800 diode BYW 60
Contextual Info: BYW25 SERIES MAINTENANCE TYPE J \_ FAST SOFT-RECOVERY RECTIFIER DIODES Fast soft-recovery diodes in DO-5 metal envelopes especially suitable fo r operation as main and com m utating diodes in 3-phase a.c. m otor speed control inverters and in high frequency power

Contextual Info: Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYW97 series FEATURES DESCRIPTION • Glass passivated Rugged glass package, using a high temperature alloyed construction. This package is hermetically sealed and fatigue free as coefficients of

Contextual Info: Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged FEATURES • • • • • • BYW29E series SYMBOL QUICK REFERENCE DATA Low forward volt drop Fast switching Soft recovery characteristic Reverse surge capability High thermal cycling performance

BYW97

Abstract: BYW97F BYW97G un-07
Contextual Info: Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYW97 series FEATURES DESCRIPTION • Glass passivated Rugged glass package, using a high temperature alloyed construction. This package is hermetically sealed and fatigue free as coefficients of

TFK diodes BYW 76

Abstract: 13009 Jt 43 byw 56 equivalent TFK diodes 148 tfk U 264 tfk 804 TFK 421 diode BYW 60 diode byt 45 J BYT 45 J
Contextual Info: .4 . 'W iriy IFWCCIRQ electronic Creative Technologies Selection guide transistors and diodes Contents, alpha-numeric Type Page BA 204 BA 243 BA 244 BA 282 BA 283 BA 4 79 G BA 4 7 9 S BA 679 BA 682 BA 683 BA 779 6 6 6 6 6 7 7 7 6 6 7 B A Q 33 BAQ 34 BAQ 35

42R2

Abstract: diode 42R2 BYW series FR56A FR57A 62R2 fr56 Thomson-CSF rectifier 22R2 FR58A
Contextual Info: o rectifier diodes < 100 A diodes de redressement < 100A THOMSON-CSF Types •o VRRM A (V) ■ fsm vF (A) (V) / iF 10 ms m ax 6 A* / Tease = 125°C G 5 0 6 ,(R) G 1006, (R) G 2006, (R) G 3006,(R) G 4006, (R) G 5006,(R) G 6006,(R) G 8006, (R) G 1106, (R)

BYW series

Contextual Info: Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged GENERAL DESCRIPTION BYW29EX series QUICK REFERENCE DATA SYMBOL Glass passivated epitaxial rectifier diodes in a full pack plastic envelope, featuring low forward voltage drop,

Contextual Info: Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged FEATURES • • • • • • BYW29E series SYMBOL QUICK REFERENCE DATA Low forward volt drop Fast switching Soft recovery characteristic Reverse surge capability High thermal cycling performance