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    BYV27 DIODE Search Results

    BYV27 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CEZ6V2
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.2 V, ESC Datasheet
    CUZ6V8
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, USC Datasheet
    CUZ12V
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Datasheet
    MUZ5V6
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Datasheet
    CEZ6V8
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, ESC Datasheet

    BYV27 DIODE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    byv27-500

    Contextual Info: DIGITRON SEMICONDUCTORS BYV27-50 – BYV27-600 ULTRA FAST AVALANCHE SINTERGLASS DIODE MAXIMUM RATINGS Tamb = 25°C unless otherwise specified Parameter Test Condition Part BYV27-50 55 110 BYV27-150 165 BYV27-300 440 560 BYV27-600 675 BYV27-50 50 BYV27-100


    Original     		BYV27-50 BYV27-600 BYV27-100 BYV27-150 BYV27-200 BYV27-300 BYV27-500 byv27-500 PDF

    Contextual Info: DIGITRON SEMICONDUCTORS BYV27-50 – BYV27-200 ULTRA FAST AVALANCHE SINTERGLASS DIODE MAXIMUM RATINGS Tamb = 25°C unless otherwise specified Parameter Test Condition Part Peak reverse voltage, non-repetitive Value BYV27-50 55 BYV27-100 110 BYV27-150 VRSM


    Original     		BYV27-50 BYV27-200 BYV27-100 BYV27-150 PDF

    BYV27-200

    Abstract: BYV27-100 BYV27-150 BYV27-50 BYV27
    Contextual Info: BYV27-50, BYV27-100, BYV27-150, BYV27-200 Vishay Semiconductors Ultra-Fast Avalanche Sinterglass Diode FEATURES • Controlled avalanche characteristic • Low forward voltage • Ultra fast recovery time • Glass passivated junction • Hermetically sealed package


    Original     		BYV27-50, BYV27-100, BYV27-150, BYV27-200 2002/95/EC 2002/96/EC OD-57 MIL-STD-750, 18-Jul-08 BYV27-200 BYV27-100 BYV27-150 BYV27-50 BYV27 PDF

    BYV27-50

    Abstract: BYV27-100 BYV27-150 BYV27-200 DIODE WITH SOD CASE BYV27200TR BYV27-200-TR
    Contextual Info: BYV27-50, BYV27-100, BYV27-150, BYV27-200 www.vishay.com Vishay Semiconductors Ultra-Fast Avalanche Sinterglass Diode FEATURES • Controlled avalanche characteristic • Low forward voltage • Ultra fast recovery time • Glass passivated junction • Hermetically sealed package


    Original     		BYV27-50, BYV27-100, BYV27-150, BYV27-200 OD-57 MIL-STD-750, BYV27-200 BYV27-2trademarks 2011/65/EU BYV27-50 BYV27-100 BYV27-150 DIODE WITH SOD CASE BYV27200TR BYV27-200-TR PDF

    Contextual Info: BYV27-50, BYV27-100, BYV27-150, BYV27-200 www.vishay.com Vishay Semiconductors Ultra-Fast Avalanche Sinterglass Diode FEATURES • Controlled avalanche characteristic • Low forward voltage • Ultra fast recovery time • Glass passivated junction • Hermetically sealed package


    Original     		BYV27-50, BYV27-100, BYV27-150, BYV27-200 OD-57 MIL-STD-750, 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. PDF

    BYV27-50

    Abstract: BYV27-100 BYV27-150 BYV27-200
    Contextual Info: BYV27-50, BYV27-100, BYV27-150, BYV27-200 Vishay Semiconductors Ultra-Fast Avalanche Sinterglass Diode FEATURES • Controlled avalanche characteristic • Low forward voltage • Ultra fast recovery time • Glass passivated junction • Hermetically sealed package


    Original     		BYV27-50, BYV27-100, BYV27-150, BYV27-200 2002/95/EC 2002/96/EC OD-57 MIL-STD-750, BYV27-50 BYV27-100 BYV27-150 BYV27-200 PDF

    BYV27-200-TAP

    Contextual Info: BYV27-50, BYV27-100, BYV27-150, BYV27-200 www.vishay.com Vishay Semiconductors Ultra-Fast Avalanche Sinterglass Diode FEATURES • Controlled avalanche characteristic • Low forward voltage • Ultra fast recovery time • Glass passivated junction • Hermetically sealed package


    Original     		BYV27-50, BYV27-100, BYV27-150, BYV27-200 OD-57 MIL-STD-750, 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A BYV27-200-TAP PDF

    BYV27-200

    Abstract: BYV27-50 BYV27-100 BYV27-150 BYV27 BYV-27-100
    Contextual Info: BYV27-50, BYV27-100, BYV27-150, BYV27-200 Vishay Semiconductors Ultra-Fast Avalanche Sinterglass Diode FEATURES • Controlled avalanche characteristic • Low forward voltage • Ultra fast recovery time • Glass passivated junction • Hermetically sealed package


    Original     		BYV27-50, BYV27-100, BYV27-150, BYV27-200 2002/95/EC 2002/96/EC OD-57 MIL-STD-750, BYV27-50 BYV27-100 BYV27-200 BYV27-150 BYV27 BYV-27-100 PDF

    Contextual Info: BYV27-50, BYV27-100, BYV27-150, BYV27-200 www.vishay.com Vishay Semiconductors Ultra-Fast Avalanche Sinterglass Diode FEATURES • Controlled avalanche characteristic • Low forward voltage • Ultra fast recovery time • Glass passivated junction • Hermetically sealed package


    Original     		BYV27-50, BYV27-100, BYV27-150, BYV27-200 OD-57 MIL-STD-750, 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A PDF

    Contextual Info: UESI101 UES1102 UES1103 RECTIFIERS High Efficiency, 2.5A BYV27-50 BYV27-100 BYV27-150 FEATURES DESCRIPTION • • • • An axial leaded power rectifier useful in many switching applications. Particularly suited where very fast recovery and low forward voltage are


    OCR Scan     		UESI101 UES1102 UES1103 BYV27-50 BYV27-100 BYV27-150 UES1101 100ms PDF

    BYV27

    Abstract: BYV27-100 UES1101 BYV27-150 BYV27-50 UESI102 UES1103 BYV-27-100
    Contextual Info: RECTIFIERS UES1101 üES1102 UES1103 High Efficiency, 2.5A BYV27-50 BYV27-100 BYV27-150 FEATURES DESCRIPTION • • • • An axial leaded power rectifier useful in many switching applications. Particularly suited where very fast recovery and low forward voltage are


    OCR Scan     		UES1101 BYV27-50 ES1102 BYV27-100 UES1103 BYV27-150 UESU03 BYV27-50 BYV27 BYV27-150 UESI102 BYV-27-100 PDF

    Contextual Info: RECTIFIERS U ESI 101 UESI102 UES1103 High Efficiency, 2.5A BYV27-50 BYV27-100 BYV27-150 FEATURES DESCRIPTION • • • • An axial leaded power rectifier useful in m any switching applications. Particularly suited where very fast recovery and low forward voltage are


    OCR Scan     		UESI102 UES1103 BYV27-50 BYV27-100 BYV27-150 UES1101 UES1102 PDF

    BYV27-200 DO-41

    Abstract: philips 23 Philips 336 TA 2092 N BP317 BYV27-200
    Contextual Info: Crop here for Mid-Atlantic paper size DISCRETE SEMICONDUCTORS Fact Sheet 080 High-quality glass-passivated diodes Glass Bead BYV27-200 competitor investigation This publication offers a direct comparison between Philips Semiconductors’ BYV27-200 Glass Bead diode family and two


    Original     		BYV27-200 BYV27-200 BYV27-200, DO-41 BYV27-200 DO-41 philips 23 Philips 336 TA 2092 N BP317 PDF

    BYV27-200

    Abstract: 202 sod57 DS30038
    Contextual Info: BYV27/50 - BYV27/200 2.0A SUPER-FAST GLASS BODY RECTIFIER Features • · · · · · Hermetically Sealed Glass Body Construction Controlled Avalanche Characteristics Super-Fast Switching for High Efficiency High Current Capability and Low Forward Voltage Drop


    Original     		BYV27/50 BYV27/200 OD-57 OD-57, MIL-STD-202, DS30038 BYV27-200 202 sod57 PDF

    Contextual Info: BYV27/. Vishay Semiconductors Ultra Fast Avalanche Sinterglass Diode Features • • • • • • • Controlled avalanche characteristic Low forward voltage e2 Ultra fast recovery time Glass passivated junction Hermetically sealed package Lead Pb -free component


    Original     		BYV27/. 2002/95/EC 2002/96/EC MILSTD-750, OD-57 D-74025 21-Jun-05 PDF

    Ultra Fast Avalanche Sinterglass Diode

    Abstract: 9526 j diode case R-1 BYV27 BYV27-100 BYV27-150 BYV27-200 BYV27-50
    Contextual Info: BYV27/. Vishay Semiconductors Ultra Fast Avalanche Sinterglass Diode Features • • • • • • • Controlled avalanche characteristic Low forward voltage e2 Ultra fast recovery time Glass passivated junction Hermetically sealed package Lead Pb -free component


    Original     		BYV27/. 2002/95/EC 2002/96/EC MILSTD-750, OD-57 BYV27-50 08-Apr-05 Ultra Fast Avalanche Sinterglass Diode 9526 j diode case R-1 BYV27 BYV27-100 BYV27-150 BYV27-200 BYV27-50 PDF

    BYV27-200

    Abstract: BYV27 BYV27-100 BYV27-150 BYV27-50
    Contextual Info: BYV27/. Vishay Semiconductors Ultra Fast Avalanche Sinterglass Diode Features • • • • • • • Controlled avalanche characteristic Low forward voltage e2 Ultra fast recovery time Glass passivated junction Hermetically sealed package Lead Pb -free component


    Original     		BYV27/. 2002/95/EC 2002/96/EC MILSTD-750, OD-57 BYV27-50 18-Jul-08 BYV27-200 BYV27 BYV27-100 BYV27-150 BYV27-50 PDF

    Contextual Info: BYV27 SERIES EPITAXIAL AVALANCHE DIODES D2 PRV : 50 - 200 Volts Io : 2.0 Amperes * * * * * * 1.00 25.4 MIN. 0.161 (4.1) 0.154 (3.9) FEATURES : High current capability High surge current capability High reliability Low reverse current Low forward voltage drop


    Original     		BYV27 UL94V-O MIL-STD-202, PDF

    Contextual Info: www.eicsemi.com BYV27 SERIES EPITAXIAL AVALANCHE DIODES DO - 41 PRV : 50 - 200 Volts Io : 2.0 Amperes FEATURES : * * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Very fast recovery


    Original     		BYV27 DO-41 UL94V-O MIL-STD-202, PDF

    BYV27-600

    Abstract: D25M VR 100K
    Contextual Info: BYV27-600 VISHAY Vishay Semiconductors Ultra Fast Avalanche Sinterglass Diode \ Features • • • • Glass passivated Hermetically sealed axial-leaded glass envelope Low reverse current Ultra fast soft recovery switching Applications Electronic ballast


    Original     		BYV27-600 MIL-STD-750, D-74025 07-Jan-03 BYV27-600 D25M VR 100K PDF

    Contextual Info: BYV27-600 www.vishay.com Vishay Semiconductors Ultra-Fast Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically sealed axial-leaded glass envelope • Low reverse current • Ultra fast soft recovery switching • Material categorization:


    Original     		BYV27-600 OD-57 MIL-STD-750, BYV27-600-TR 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    BYV27 Series

    Abstract: BYV27-200 DO-41 BYV27-50 BYV27 BYV27-100 BYV27-150 BYV27-200
    Contextual Info: BYV27 SERIES EPITAXIAL AVALANCHE DIODES DO - 41 PRV : 50 - 200 Volts Io : 2.0 Amperes FEATURES : * * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Very fast recovery Pb / RoHS Free


    Original     		BYV27 DO-41 UL94V-O MIL-STD-202, BYV27 Series BYV27-200 DO-41 BYV27-50 BYV27-100 BYV27-150 BYV27-200 PDF

    BYV27-100

    Abstract: BYV27-150 BYV27 BYV27-200 BYV27-50 SOD-57 BYV27 diode DIODE WITH SOD CASE 25NS120
    Contextual Info: BYV27/. Vishay Semiconductors Ultra Fast Avalanche Sinterglass Diode Features • • • • • • • Controlled avalanche characteristic Low forward voltage e2 Ultra fast recovery time Glass passivated junction Hermetically sealed package Lead Pb -free component


    Original     		BYV27/. 2002/95/EC 2002/96/EC MILSTD-750, OD-57 BYV27-50 OD-57 BYV27-100 BYV27-150 BYV27 BYV27-200 BYV27-50 SOD-57 BYV27 diode DIODE WITH SOD CASE 25NS120 PDF

    SOD-57

    Abstract: BYV27-600
    Contextual Info: BYV27-600 SINTERED GLASS JUNCTION ULTRAFAST AVALANCHE RECTIFIER VOLTAGE： ：600V CURRENT: 1.6A FEATURE SOD-57 Glass passivated High maximum operating temperature Low leakage current Excellent stability Guaranteed avalanche energy absorption capability MECHANICAL DATA


    Original     		BYV27-600 OD-57 OD-57 400mA; SOD-57 BYV27-600 PDF