DS30038 Search Results

Infrared Phototransistor

Abstract: QSB320
Contextual Info: QSB320F SURFACE MOUNT SILICON INFRARED PHOTOTRANSISTOR PACKAGE DIMENSIONS 0.118 3.0 0.102 (2.6) 0.083 (2.1) 0.067 (1.7) 0.091 (2.3) 0.083 (2.1) 0.134 (3.4) 0.118 (3.0) 0.041 (0.1) 0.035 (0.9) 0.028 (0.7) 0.094 (2.4) SCHEMATIC FEATURES 0.043 (1.1) 0.020 (0.5)

K1 MARK 6PIN

Abstract: MOC1193S
Contextual Info: PHOTODARLINGTON OPTOCOUPLERS NO BASE CONNECTION MOC119 DESCRIPTION PACKAGE DIMENSIONS The MOC119 device has a gallium arsenide infrared emitting diode coupled to a silicon darlington phototransistor. PIN 1 ID. 0.270 (6.86) 0.240 (6.10) SEATING PLANE 6 FEATURES

Infrared Phototransistor

Abstract: QSB320
Contextual Info: QSB320 SURFACE MOUNT SILICON INFRARED PHOTOTRANSISTOR PACKAGE DIMENSIONS 0.118 3.0 0.102 (2.6) 0.083 (2.1) 0.067 (1.7) 0.091 (2.3) 0.083 (2.1) 0.134 (3.4) 0.118 (3.0) 0.041 (0.1) 0.035 (0.9) 0.028 (0.7) 0.094 (2.4) SCHEMATIC FEATURES 0.043 (1.1) 0.020 (0.5)

MOC119

Contextual Info: PHOTODARLINGTON OPTOCOUPLERS NO BASE CONNECTION MOC119 DESCRIPTION PACKAGE DIMENSIONS The MOC119 device has a gallium arsenide infrared emitting diode coupled to a silicon darlington phototransistor. PIN 1 ID. 0.270 (6.86) 0.240 (6.10) SEATING PLANE 6 FEATURES

Infrared Phototransistor

Abstract: QSB320 QEB421
Contextual Info: QSB320 SURFACE MOUNT SILICON INFRARED PHOTOTRANSISTOR PACKAGE DIMENSIONS 0.118 3.0 0.102 (2.6) 0.083 (2.1) 0.067 (1.7) 0.091 (2.3) 0.083 (2.1) 0.134 (3.4) 0.118 (3.0) 0.041 (0.1) 0.035 (0.9) 0.028 (0.7) 0.094 (2.4) SCHEMATIC FEATURES 0.043 (1.1) 0.020 (0.5)

QSB320

Contextual Info: QSB320F SURFACE MOUNT SILICON INFRARED PHOTOTRANSISTOR PACKAGE DIMENSIONS 0.118 3.0 0.102 (2.6) 0.083 (2.1) 0.067 (1.7) 0.091 (2.3) 0.083 (2.1) 0.134 (3.4) 0.118 (3.0) 0.041 (0.1) 0.035 (0.9) 0.028 (0.7) 0.094 (2.4) SCHEMATIC FEATURES 0.043 (1.1) 0.020 (0.5)

QVL25335

Contextual Info: SLOTTED OPTICAL SWITCH QVL25335 PACKAGE DIMENSIONS 3 2 .020 .50 .03 (.75) .023 (.60) XXXXXXX XX XXX .020 (.50) 4 1 SECTION X-X X XXXXXX XX XX X 1.150 (29.21) CL .177 (4.50) 2PLCS .276 (7.01) .398 (10.11) .138 (3.51) .638 (16.21) .200 (5.09) CL .350 (8.89)

hma121

Abstract: HMA124 HMA2701 HMAA2705
Contextual Info: FULL PITCH MINI-FLAT PACKAGE 4-PIN OPTOCOUPLERS HMA121 HMA124 HMA2701 HMAA2705 DESCRIPTION The HMA series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a compact 4-pin mini-flat package. The lead pitch is 2.54 mm.

Contextual Info: QEB421 SURFACE MOUNT INFRARED LIGHT EMITTING DIODE PACKAGE DIMENSIONS 0.118 3.0 0.102 (2.6) 0.091 (2.3) 0.083 (2.1) 0.134 (3.4) 0.118 (3.0) 0.083 (2.1) 0.067 (1.7) 0.041 (0.1) 0.035 (0.9) 0.028 (0.7) 0.094 (2.4) SCHEMATIC FEATURES 0.043 (1.1) 0.020 (0.5)

QEB421

Contextual Info: QEB421 SURFACE MOUNT INFRARED LIGHT EMITTING DIODE PACKAGE DIMENSIONS 0.118 3.0 0.102 (2.6) 0.083 (2.1) 0.067 (1.7) 0.091 (2.3) 0.083 (2.1) 0.041 (0.1) 0.035 (0.9) 0.028 (0.7) 0.134 (3.4) 0.118 (3.0) 0.094 (2.4) SCHEMATIC FEATURES 0.043 (1.1) 0.020 (0.5)

TA 2092 N

Abstract: MOC119 SE-171 Swindon Silicon Systems
Contextual Info: PHOTODARLINGTON OPTOCOUPLERS NO BASE CONNECTION MOC119 DESCRIPTION PACKAGE DIMENSIONS The MOC119 device has a gallium arsenide infrared emitting diode coupled to a silicon darlington phototransistor. PIN 1 ID. 0.270 (6.86) 0.240 (6.10) SEATING PLANE 6 FEATURES

4N40

Abstract: solid state relay 220v 10a 4N39 IN5060 SC1460 4N39-4N40 Transistor SC1460
Contextual Info: PHOTO SCR OPTOCOUPLERS DESCRIPTION 4N39 4N40 The 4N39 and 4N40 have a gallium-arsenide infrared emitting diode optically coupled with a light activated silicon controlled rectifier in a dual in-line package. FEATURES • • • • 10 A, T2L compatible, solid state relay

QSB320

Contextual Info: QSB320 SURFACE MOUNT SILICON INFRARED PHOTOTRANSISTOR PACKAGE DIMENSIONS 0.118 3.0 0.102 (2.6) 0.083 (2.1) 0.067 (1.7) 0.091 (2.3) 0.083 (2.1) 0.134 (3.4) 0.118 (3.0) 0.041 (0.1) 0.035 (0.9) 0.028 (0.7) 0.094 (2.4) SCHEMATIC FEATURES 0.043 (1.1) 0.020 (0.5)

Contextual Info: QEB421 SURFACE MOUNT INFRARED LIGHT EMITTING DIODE PACKAGE DIMENSIONS 0.118 3.0 0.102 (2.6) 0.083 (2.1) 0.067 (1.7) 0.091 (2.3) 0.083 (2.1) 0.041 (0.1) 0.035 (0.9) 0.028 (0.7) 0.134 (3.4) 0.118 (3.0) 0.094 (2.4) SCHEMATIC FEATURES 0.043 (1.1) 0.020 (0.5)

IN5060 diode

Abstract: 45010 4N40 in5060 4N39 AN40 SC1460
Contextual Info: PHOTO SCR OPTOCOUPLERS DESCRIPTION 4N39 4N40 The 4N39 and AN40 have a gallium-arsenide infrared emitting diode optically coupled with a light activated silicon controlled rectifier in a dual in-line package. FEATURES • • • • 10 A, T2L compatible, solid state relay

QSB320

Contextual Info: QSB320F SURFACE MOUNT SILICON INFRARED PHOTOTRANSISTOR PACKAGE DIMENSIONS 0.118 3.0 0.102 (2.6) 0.083 (2.1) 0.067 (1.7) 0.091 (2.3) 0.083 (2.1) 0.134 (3.4) 0.118 (3.0) 0.041 (0.1) 0.035 (0.9) 0.028 (0.7) 0.094 (2.4) SCHEMATIC FEATURES 0.043 (1.1) 0.020 (0.5)

QSB320

Contextual Info: QSB320 SURFACE MOUNT SILICON INFRARED PHOTOTRANSISTOR PACKAGE DIMENSIONS 0.118 3.0 0.102 (2.6) 0.083 (2.1) 0.067 (1.7) 0.091 (2.3) 0.083 (2.1) 0.134 (3.4) 0.118 (3.0) 0.041 (0.1) 0.035 (0.9) 0.028 (0.7) 0.094 (2.4) SCHEMATIC FEATURES 0.043 (1.1) 0.020 (0.5)

QSB320

Contextual Info: QSB320 SURFACE MOUNT SILICON INFRARED PHOTOTRANSISTOR PACKAGE DIMENSIONS 0.118 3.0 0.102 (2.6) 0.083 (2.1) 0.067 (1.7) 0.091 (2.3) 0.083 (2.1) 0.134 (3.4) 0.118 (3.0) 0.041 (0.1) 0.035 (0.9) 0.028 (0.7) 0.094 (2.4) SCHEMATIC FEATURES 0.043 (1.1) 0.020 (0.5)

Photo SCR

Abstract: in5060 IN5060 diode Transistor SC1460 rgk 13 4N40 SCR TRIGGER PULSE circuit 4N39 SC1460 4N39-4N40
Contextual Info: PHOTO SCR OPTOCOUPLERS DESCRIPTION 4N39 4N40 The 4N39 and 4N40 have a gallium-arsenide infrared emitting diode optically coupled with a light activated silicon controlled rectifier in a dual in-line package. FEATURES • • • • 10 A, T2L compatible, solid state relay

QRE1113

Contextual Info: QRE1113.GR REFLECTIVE OBJECT SENSOR PACKAGE DIMENSIONS 0.114 2.90 0.099 (2.50) FEATURES 0.024 (0.60) 0.016 (0.40) 4 • Phototransistor output 3 • Tape and reel packaging • No contact surface sensing 0.079 (2.0) 0.063 (1.60) 0.130 (3.30) 0.122 (3.10)

BYV27-200

Abstract: 202 sod57 DS30038
Contextual Info: BYV27/50 - BYV27/200 2.0A SUPER-FAST GLASS BODY RECTIFIER Features • · · · · · Hermetically Sealed Glass Body Construction Controlled Avalanche Characteristics Super-Fast Switching for High Efficiency High Current Capability and Low Forward Voltage Drop

MOC119

Abstract: darlington 300w
Contextual Info: PHOTODARLINGTON OPTOCOUPLERS NO BASE CONNECTION MOC119 DESCRIPTION PACKAGE DIMENSIONS The MOC119 device has a gallium arsenide infrared emitting diode coupled to a silicon darlington phototransistor. PIN 1 ID. 0.270 (6.86) 0.240 (6.10) SEATING PLANE 6 FEATURES

Contextual Info: QEB421 SURFACE MOUNT INFRARED LIGHT EMITTING DIODE PACKAGE DIMENSIONS 0.118 3.0 0.102 (2.6) 0.083 (2.1) 0.067 (1.7) 0.091 (2.3) 0.083 (2.1) 0.041 (0.1) 0.035 (0.9) 0.028 (0.7) 0.134 (3.4) 0.118 (3.0) 0.094 (2.4) SCHEMATIC FEATURES 0.043 (1.1) 0.020 (0.5)

Infrared Phototransistor

Abstract: QEB421 QSB320F QSB320
Contextual Info: QSB320F SURFACE MOUNT SILICON INFRARED PHOTOTRANSISTOR PACKAGE DIMENSIONS 0.118 3.0 0.102 (2.6) 0.083 (2.1) 0.067 (1.7) 0.091 (2.3) 0.083 (2.1) 0.134 (3.4) 0.118 (3.0) 0.041 (0.1) 0.035 (0.9) 0.028 (0.7) 0.094 (2.4) SCHEMATIC FEATURES 0.043 (1.1) 0.020 (0.5)