BY252GP Search Results

Contextual Info: BY251GP, BY252GP, BY253GP, BY254GP, BY255GP www.vishay.com Vishay General Semiconductor Glass Passivated Junction Plastic Rectifier FEATURES • Superectifier application SUPERECTIFIER structure for high reliability • Cavity-free glass-passivated junction

BYD74G

Abstract: FUR460 diode tfk 18db6a diode cross reference FAGOR SM6T33CA BZY97C tfk 240 1SMZG06GP D4SB80Z
Contextual Info: Cross Reference Every care has been taken in compiling this cross reference list which is published in good faith to assist engineers. Readers are reminded that this list is intended for guidance only. FAGOR ELECTRÓNICA can not be held responsible for any

BY251GP

Abstract: BY252GP BY253GP BY254GP BY255GP
Contextual Info: BY251GP thru BY255GP Glass Passivated Junction Plastic Rectifier t c u rodFeatures P New DO-201AD • Plastic package has Underwriters Laboratories Flammability Classification 94V-0 • High temperature metallurgically bonded construction • Cavity-free glass passivated junction

COLOR tv tube charger circuit diagrams

Abstract: MBRF 1015 CT smd diode S4 67A DO-213AB smd diode color marking code vacuum tube applications data book V40100PG diode 719 b340a EQUIVALENT 31gf6 SB050 D 168 s104 diode 87a
Contextual Info: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book rectifiers vishay general semiconductor vse-db0001-1102 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

Contextual Info: BY251GP thru BY255GP Vishay General Semiconductor Glass Passivated Junction Plastic Rectifier FEATURES • Superectifier application structure for high reliability • Cavity-free glass-passivated junction • Low forward voltage drop • Low leakage current, IR less than 0.1 A

BY251GP

Contextual Info: BY251GP thru BY255GP Vishay General Semiconductor Glass Passivated Junction Plastic Rectifier Major Ratings and Characteristics IF AV 3.0 A VRRM 200 V to 1300 V IFSM 100 A IR 5.0 µA VF 1.1 V Tj max. 175 °C d* e t n Pate DO-201AD * Glass-plastic encapsulation

BY251GP

Abstract: BY255GP JESD22-B102D J-STD-002B
Contextual Info: BY251GP thru BY255GP Vishay General Semiconductor Glass Passivated Junction Plastic Rectifier FEATURES • Superectifier structure for high reliability application • Cavity-free glass-passivated junction • Low forward voltage drop d* e t n e Pat * Glass-plastic encapsulation

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

MUR1560 equivalent

Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
Contextual Info: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in

1n5822 trr

Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Contextual Info: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

OZ 9983

Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Contextual Info: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —

Diode 1N4007 DO-7 Rectifier Diode

Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
Contextual Info: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced

BY251GP

Abstract: BY255GP JESD22-B102D J-STD-002B
Contextual Info: BY251GP thru BY255GP Vishay General Semiconductor Glass Passivated Junction Plastic Rectifier FEATURES • Superectifier structure for High Reliability application • Cavity-free glass-passivated junction • Low forward voltage drop ed* t n e Pat * Glass-plastic encapsulation

BY251GP

Contextual Info: BY251GP thru BY255GP Vishay Semiconductors New Product formerly General Semiconductor Glass Passivated Junction Plastic Rectifiers DO-201AD 1.0 25.4 Min. Reverse Voltage 200 to 1300V Forward Current 3.0A * d e t n e t Pa Features • Plastic package has Underwriters Laboratories

stpr16

Abstract: MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode
Contextual Info: MURB1620CT Preferred Device SWITCHMODE Power Rectifier D2PAK Power Surface Mount Package Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • • • •

b2545 transistor

Abstract: TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface
Contextual Info: MBR2535CT, MBR2545CT MBR2545CT is a Preferred Device SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection

MR2835S equivalent

Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
Contextual Info: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected

Schottky Diode 039 B34

Abstract: S4 84a DIODE schottky MELF ZENER DIODE color bands blue diode RGP 15J sb050 d 331 s104 diode 87a 252 B34 SMD ZENER DIODE SB050 transistor equivalent MELF DIODE color bands smd transistor P2D
Contextual Info: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book rectifiers vishay general semiconductor vse-db0001-0809 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

Contextual Info: BY251GP thru BY255GP Vishay General Semiconductor Glass Passivated Junction Plastic Rectifier FEATURES • Superectifier application SUPERECTIFIER structure for high reliability • Cavity-free glass-passivated junction • Low forward voltage drop • Low leakage current, IR less than 0.1 A

BY251GP

Contextual Info: BY251GP thru BY255GP Vishay General Semiconductor Glass Passivated Junction Plastic Rectifier FEATURES • Superectifier structure for high reliability application • Cavity-free glass-passivated junction • Low forward voltage drop d* e t n e Pat • Low leakage current, IR less than 0.1 µA

BY251GP

Contextual Info: BY251GP thru BY255GP Vishay General Semiconductor Glass Passivated Junction Plastic Rectifier FEATURES • Superectifier structure for High Reliability application • Cavity-free glass-passivated junction • Low forward voltage drop ed* t n e Pat * Glass-plastic encapsulation

Contextual Info: BY251GP thru BY255GP Vishay General Semiconductor Glass Passivated Junction Plastic Rectifier FEATURES • Superectifier structure for high reliability application • Cavity-free glass-passivated junction • Low forward voltage drop d* e t n e Pat • Low leakage current, IR less than 0.1 µA

MUR1560 equivalent

Abstract: 1N4936 equivalent MUR1100E equivalent 1N5404 equivalent MUR620CT equivalent mur420 equivalent MUR1620CT equivalent BYV19-45 MUR1660CT equivalent MUR1520 equivalent
Contextual Info: Index and Cross Reference The following table represents an index and cross reference guide for all rectifier devices which are either manufactured directly by ON Semiconductor or for which ON Semiconductor manufactures a suitable equivalent. Where the ON

BY255GP

Abstract: BY251GP
Contextual Info: BY251GP thru BY255GP Vishay General Semiconductor Glass Passivated Junction Plastic Rectifier Major Ratings and Characteristics IF AV 3.0 A VRRM 200 V to 1300 V IFSM 100 A IR 5.0 µA VF 1.1 V Tj max. 175 °C d* e t n Pate DO-201AD * Glass-plastic encapsulation