BUZ91
Abstract: buz 91 f BUZ91A buz 10 DIODE BUZ 1342-A3
Contextual Info: SIEMENS SIPMOS Power Transistors • • • BUZ 91 BUZ 91 A N channel Enhancem ent mode Avalanche-rated Type V Ds BUZ 91 600 V 8.5 A 32 ’ C BUZ 91 A 600 V 8.0 A 33 "C Id Tc Package ’> Ordering Code 0.8 £2 TO -220 AB C 67078-S 1342-A2 0.9 n TO -220 AB
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67078-s1342-a21342-a3buz91+4buz 91 fbuz91abuz 10diode buz
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Contextual Info: SIEMENS BUZ 91 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 91 Vds 600 V b 8.5 A ^DS on Package Ordering Code 0.8 Í2 TO-220 AB C67078-S1342-A2 Maximum Ratings Parameter Symbol Continuous drain current
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buz91a
Abstract: transistor buz91 C67078-S1342-A3 BUZ-91a 6C35
Contextual Info: SIEMENS BUZ 91 A SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 91 A Vbs 600 V h ff DS on Package Ordering Code 8A 0.9 n TO-220 AB C67078-S1342-A3 Maximum Ratings Parameter Symbol Continuous drain current b Values
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o-220c67078-s1342-a3ah35fa0535hds+4buz91atransistor buz91buz-91a6c35
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" transistor" fgs 3
Abstract: Fly DS 100
Contextual Info: SIEMENS BUZ 91 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 91 b 8.5 A W>s 600 V ^bs on 0.8 n Package Ordering Code TO-220 AB C67078-S1342-A2 Maximum Ratings Parameter Symbol Continuous drain current
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o-220c67078-s1342-a2transistor" fgs 3fly ds 100 |
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BUZ91
Abstract: transistor buz91 C67078-S1342-A2 235bQ5 gs d050 transistor 91 330
Contextual Info: SIEMENS BUZ 91 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 91 Vds 600 V h ^DS on Package Ordering Code 8.5 A 0.8 £2 TO-220 AB C67078-S1342-A2 M axim um Ratings Parameter Symbol Continuous drain current
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o-220c67078-s1342-a2023sbd5buz91+4transistor buz91235bq5gs d050transistor 91 330
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BUZ91A
Abstract: buz91
Contextual Info: SIEMENS BUZ 91 A SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 91 A Vds 600 V b 8A ^DS on Package Ordering Code 0.9 n TO-220 AB C67078-S1342-A3 Maximum Ratings Parameter Symbol Continuous drain current Values Id
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60F10
Abstract: C67078-S1342-A2
Contextual Info: BUZ 91 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 91 600 V 8.5 A 0.8 Ω TO-220 AB C67078-S1342-A2 Maximum Ratings Parameter Symbol
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transistor buz 350
Abstract: BUZ 330 C67078-S1342-A3 buz 91 f
Contextual Info: Not for new designs BUZ 91 A SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 91 A 600 V 8A 0.9 Ω TO-220 AB C67078-S1342-A3 Maximum Ratings Parameter Symbol
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o-220c67078-s1342-a3transistor buz 350buz 330+1buz 91 f
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Contextual Info: SIEMENS BUZ 91 A SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 G Type Vds b ^DS on Package Ordering Code BUZ 91 A 600 V 8A 0.9 £2 TO-220 AB C67078-S1342-A3 Maxim um Ratings Parameter Symbol Continuous drain current
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BUZ 91
Abstract: transistor buz 350 C67078-S1342-A3 600V8A
Contextual Info: BUZ 91 A SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 91 A 600 V 8A 0.9 Ω TO-220 AB C67078-S1342-A3 Maximum Ratings Parameter Symbol Continuous drain current
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o-220c67078-s1342-a3buz 91transistor buz 350+1600v8a
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BUZ MOSFET
Abstract: mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S
Contextual Info: SIEMENS Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs U ♦ BS 107 200 26.00 0.8. 2.0 0.13 TO-92 BSS 192 -240 20.00 -2.0. .-0.8 BS 170 60 5.00 0.8. 2.0 0.30 TO-92 BSS 229 250 100.00 -1.8. .-0.7 0.07 TO-92 BSO 307N 30 0.075 1.2. 2.0 4.2 SO-8
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615nvbsp318sbuz mosfetmosfet buz 326+8buz mosfet 334spd14n05mosfet buz 349mosfet buz 90abuz 100 mosfetbup202buz mosfet 102sbuz mosfet 111s
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BUZ MOSFET
Abstract: mosfet BUZ 326 BUP 312 BSS 130 BUP 304 bup 313 615n60 BUZ 840 SGU06N60 BUP 307D
Contextual Info: s Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs tp :/ se /ww m w ic .s on ie du me ct ns or .d / e/ ht Product Information 04. 98 Fast IGBTs S-FET SO-8 D-PAK I-PAK MOS-Transistors in alphanumeric order VDS [V] R DSon [⏲] VGS th [V] I D [A] Package
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615nvot-22320iemensb152-h6493-g5-x-7600+10buz mosfetmosfet buz 326bup 312bss 130bup 304bup 313615n60buz 840sgu06n60bup 307d
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n 332 ab
Abstract: BUZ 29
Contextual Info: SIEMENS SIPMOS* Power Transistors N-Kanal-Anreicherungstypen N channel enhancement types Typ Type C0 SIPMOS*Leistungstransistoren ^D S on m ax n ¡d A P toi W Bestellnummer Ordering code Gehäuse Package Bild Figure C67078-S1312-A2 10-220 AB 8a 5.5 75 0.4
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buz 342 G
Abstract: DIODE BUZ z347 BUP 312 diode z104 z349 z332a IGBT P213 DIODE BUZ 300 buz91a
Contextual Info: Gehäuseübersicht Package Information N-Kanal Leistungstransistoren Forts. N Channel Power Transistors G D S G TO-220 AB VDS V 50 50 50 50 50 50 50 50 50 50 50 50 50 50 60 60 60 60 60 100 100 100 100 100 100 100 100 RDS(on) Ω 10 m 18 m 23 m 28 m 30 m
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o-220o-218346s2buo-218+10buz 342 gdiode buzz347bup 312diode z104z349z332aigbt p213diode buz 300buz91a
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ks57c2016
Abstract: samsung KS57C2016 4 12 digit lcd display for watch KS57C201
Contextual Info: S MSUNG KS57C2016 4-BIT CMOS Microcontroller Product Specification OVERVIEW The KS57C2016 single-chip CMOS microcontroller is designed for very high performance using Samsung's newest 4-bit CPU core. With an up-to-20-digit LCD direct drive capability and up to 40 pins for LCD segment data
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ks57c2016up-to-20-digit16-bit100-pin+8seg39seg36seg35seg32seg31samsung ks57c20164 12 digit lcd display for watchks57c201
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BUP 312
Abstract: BUZ22 276 603d BUZ 81 bup300 buz171 BUP314D BUZ,350 BUZ,271 BUZ90A
Contextual Info: SIEMENS Typ Type Alphanumerische Typenliste List of Types in Alphanumerical Order Bestellnummer Ordering Code Seite Page Typ Type BUP 200 Q67078-A4400-A2 1125 • BUZ 11 A C67078-S1301 -A3 177 BUP200D Q67040-A4420-A2 1132 ■ BUZ 11 AL C67078-S1330-A3 186
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bup200dbup314dbup410dq67078-a4400-a2+15q67040-a4420-a2q67078-a4401-a2q67078-a4402-a2q67040-a4407-a2q67078-a4203-a2q67078-a4205-a2bup 312buz22276 603dbuz 81bup300buz171buz,350buz,271buz90a
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DIODE S4 74
Abstract: s4 74 g1
Contextual Info: SIEMENS BUZ 100SL-4 Preliminary data SIPMOS Power Transistor • Quad-channel • Enhancement mode • Logic level • Avalanche-rated • dv/dt rated Type ^DS BUZ 100SL-4 55 V 7.4 A ffDS on Package Ordering Code 0.023 £1 P-DSO-28 C67078-S. . . . . . .
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3528 pwm 20 PINS
Abstract: 3528 ,pwm 20 PINS 3528 pwm 20 PINS controller DW 5255 3528 pwm 20 pin KS88C2064 KS88-SERIES 3528 pwm BUZ 101 Circuit diagram BUZ 82
Contextual Info: KS88C2064 1 PRODUCT OVERVIEW PRODUCT OVERVIEW KS88-SERIES MICROCONTROLLERS Samsung s KS88 series of 8-bit single-chip CMOS microcontrollers offers a fast and efficient CPU, a wide range of integrated peripherals, and various mask-programmable ROM sizes. Important CPU features include:
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ks88c2064ks88-seriescom9-com17seg0-seg64+83528 pwm 20 pins3528 ,pwm 20 pins3528 pwm 20 pins controllerdw 52553528 pwm 20 pin3528 pwmbuz 101 circuit diagrambuz 82
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RPY 86
Abstract: valvo halbleiter RPY94 CQY 24 BV EI 30-20 3001 LDR 03 diode byx 64 600 valvo transistoren KP101A BAV99-1
Contextual Info: Elektronik. Wir bauen die Elemente. v a i v D Halbleiterbauelemente Produktprogramm DH, April 1984 Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die Mikroelektronik - entwickelt sich immer rascher zum Motor für eine Vielzahl von Innovationen. Mit gründ
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rpy 86valvo halbleiterrpy94cqy 24+6bv ei 30-20 3001ldr 03diode byx 64 600valvo transistorenkp101abav99-1
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siemens igbt BSM 25GD 100D
Abstract: siemens igbt BSM 25gd bsm25gd100d BSS 97 bts412a BSM15GD100D BTS 131 SIEMENS Bts 629 BSS145 siemens igbt BSM 25 gb 100 d
Contextual Info: Typenübersicht/Selection Guide SIPMOS Power MOS Transistors Families of Types Type ^DS(max) ^D S(on)m ax ^D{max] V Q A Ptoi Package Page W N channel enhancement types £ 0 BUZ 10 EÜL BUZ 10 L 50 0.07 0.07 23 23 75 75 TO-220AB TO-220AB 690 700 £ □ BUZ 11
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o-220abo-2202x1002x150+11100galsiemens igbt bsm 25gd 100dsiemens igbt bsm 25gdbsm25gd100dbss 97bts412absm15gd100dbts 131 siemensbts 629bss145siemens igbt bsm 25 gb 100 d
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z58 diode
Contextual Info: fcTT &3D D • ÖS3Sfc.GS OGlMbVa 2 M S I E G 88D 14678 — D BUZ 58 SIEMENS AK TI EN 6E SE LLSCH AF- Main ratings N-Channel = 1000 V Draln-source voltage ^DS = 4,2 A Continuous drain current h Draln-source on-resistance ^DS on = 2,0 n Description SIPMOS, N-channel, enhancement mode
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KS57C3016
Contextual Info: KS57C3016 S M SUN G 4-BIT CMOS Microcontroller Product Specification OVERVIEW The KS57C3016 single-chip CMOS microcontroller is designed for very high performance using Samsung's newest 4-bit development approach, SAM4 Samsung Arrangeable Microcontrollers . With an up-to-16-digit LCD
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bsm10gd100dn1
Abstract: BSM10GD100DN BTS 302 BSM10GD100 E6327 BUZ 324 E6288 eTS 410 siemens bsm 101 AR C67076-A2505-A52
Contextual Info: SIEMENS Typ/Bestellnummern Type/Ordering Codes Ordering code Type BRT 11 H C67079-A1000-A6 BSM 50 GAL 100 D C67076-A2002-A2 BRT 11 H Option 7 C67079-A1040-A11 BSM 50 GAL 120 D C67076-A2010-A2 BRT 11 H Option 1 + 7 C67079-A1040-A17 BSM 50 GB 100 D C67076-A2100-A2
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transistor buz 36
Abstract: BUZ 81 KS57C21632 KS57P21632 SAM47
Contextual Info: KS57C21632/P21632 1 PRODUCT OVERVIEW PRODUCT OVERVIEW OVERVIEW The KS57C21632 single-chip CMOS microcontroller has been designed for high performance using Samsung's newest 4-bit CPU core, SAM47 Samsung Arrangeable Microcontrollers . With an up-to-896-dot LCD direct drive capability, and flexible 8-bit timer/counters, the KS57C21632 offers an
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ks57c21632/p21632ks57c21632sam47up-to-896-dot+6100-pin0100b1001btransistor buz 36buz 81ks57p21632
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