BUZ 211 Search Results

Contextual Info: SIEMENS SIPMOS Power Transistors BUZ 210 BUZ 211 Type </> • N channel • Enhancement mode • FREDFET h BUZ 210 500 V 10.5 A ^DS on 0.6 n BUZ 211 500 V 9.0 A 0.8 Q Package1) Ordering Code TO-204 AA C67078-A1102-A2 TO-204 AA C67078-A1100-A2 Maximum Ratings

BUZ210

Abstract: Diode MFW 16 buz 210 Diode MFW 25 BUZ211 TC-130-W MFW diode
Contextual Info: SIEMENS SIPMOS Power Transistors BUZ 210 BUZ 211 • N channel • Enhancement mode • FREDFET Type v DS 500 V /d 10.5 A ^DS on o .6 a P ackage1) O rdering Code BUZ 210 TO-204 AA C67078-A1102-A2 BUZ 211 500 V 9.0 A 0.8 Q TO-204 AA C67078-A1100-A2 Maximum Ratings

BUZ 1045

Abstract: BUZ p channel SIEMENS 3 TB 40 17 - 0A BUZ211 BUZ 385 buz 211
Contextual Info: SIEMENS BUZ 210 BUZ 211 SIPMOS Power MOS Transistors VDS lD ^ D S o n BUZ 384 BUZ 385 = 500 V = 9 . 0 . . . 10.5 A = 0-6 •■• 0.8 Q • N channel • • FREDFET Enhancem ent mode • Packages: T O -2 04 A A (TO-3), T O -2 18 A A (T O P -3)1) Type

buz 350 equivalent

Abstract: BUP 203 transistor buz 36 BUP 312 BUP 304 leistungstransistoren bup 401 datasheet transistor buz 350 bup 213 BUP 309
Contextual Info: Typenübersicht Selection Guide • Leistungstransistoren Forts. ■ Typ VDS ■ Type V 50 50 60 50 50 60 50 50 50 50 100 100 100 100 200 200 200 200 500 500 500 1000 1000 1000 1000 400 400 400 60 60 50 50 50 ■ BUZ 10 ■ BUZ 10L ■ BUZ 10S2 ■ BUZ 11

siemens igbt BSM 25GD 100D

Abstract: siemens igbt BSM 25gd bsm25gd100d BSS 97 bts412a BSM15GD100D BTS 131 SIEMENS Bts 629 BSS145 siemens igbt BSM 25 gb 100 d
Contextual Info: Typenübersicht/Selection Guide SIPMOS Power MOS Transistors Families of Types Type ^DS(max) ^D S(on)m ax ^D{max] V Q A Ptoi Package Page W N channel enhancement types £ 0 BUZ 10 EÜL BUZ 10 L 50 0.07 0.07 23 23 75 75 TO-220AB TO-220AB 690 700 £ □ BUZ 11

BUZ211

Abstract: UZ210 kds 210
Contextual Info: SIEMENS SIPMOS Power Transistors • • • N channel Enhancement mode FREDFET Type V DS BUZ 210 500 V 10.5 A 0.6 Í2 BUZ 211 500 V 9.0 A 0.8 U ^DS on Maxim um Ratings Parameter Continuous drain current, Tc = 25 ‘ C Pulsed drain current, Tc = 25 "C

PC 014

Contextual Info: SIEMENS BUZ 12 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 12 Vbs 50 V b 42 A RoS on Package Ordering Code 0.028 n TO-220 AB C67078-S1331-A2 Maximum Ratings Parameter Symbol Continuous drain current

Contextual Info: SIEMENS BUZ 12 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 12 b 42 A Vds 50 V ffDS on Package Ordering Code 0.028 f í TO-220 AB C67078-S1331-A2 Maximum Ratings Parameter Symbol Continuous drain current

Contextual Info: <z3smi-L.onau.etoi \J-*ioaucti, Line. iJ TELEPHONE: 973 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BUZ 72 L N channel Enhancement mode Avalanche-rated Logic Level Pin1 Pin 2 G Type Vbs ID RDS(on) Package BUZ 72 L 100V 10A 0.2 Q TO-220 AB

transistor buz 210

Abstract: BUZ21 BUZ 21 C67078-S1338-A2
Contextual Info: SIPMOS Power Transistor ● ● ● ● BUZ 21 L N channel Enhancement mode Logic Level Avalanche-rated Type VDS ID RDS on Package 1) Ordering Code BUZ 21 L 100 V 21 A 0.085 Ω TO-220 AB C67078-S1338-A2 Maximum Ratings Parameter Symbol Values Continuous drain current, TC = 25 ˚C

BUZ21

Contextual Info: SIEMENS SIPMOS Power Transistor • • • • N channel Enhancement mode Logic Level Avalanche-rated Type BUZ 21 L 100 V 21 A 0.085 Maxim um Ratings Parameter Continuous drain current, 7C = 25 °C Pulsed drain current, 7C = 25 ”C Avalanche current, limited by 7] max

BUP 300

Abstract: al394 Buz 304 s1348 S1338 buz 210 0C67O78-S311O-A2 BUZ325 S1314 S1313
Contextual Info: SIEM ENS Bestellnummer Ordering Code Typ Type 0C67O47-A2O66-A2 BYP 103 0C67O47-A2O71-A2 BYP 102 0C67O47-A2O72-A2 BYP 101 0C67O47-A225O-A2 BYP 300 0C67O47-A2251-A2 BYP 301 0C67O47-A2252-A2 BYP 302 0C67O47-A2253-A2 BYP 303 0C67O47-A2254-A2 BYP 100 0C67O78-A1008-A8

bsm10gd100dn1

Abstract: BSM10GD100DN BTS 302 BSM10GD100 E6327 BUZ 324 E6288 eTS 410 siemens bsm 101 AR C67076-A2505-A52
Contextual Info: SIEMENS Typ/Bestellnummern Type/Ordering Codes Ordering code Type BRT 11 H C67079-A1000-A6 BSM 50 GAL 100 D C67076-A2002-A2 BRT 11 H Option 7 C67079-A1040-A11 BSM 50 GAL 120 D C67076-A2010-A2 BRT 11 H Option 1 + 7 C67079-A1040-A17 BSM 50 GB 100 D C67076-A2100-A2

BUZ MOSFET

Abstract: mosfet BUZ 326 BUP 312 BSS 130 BUP 304 bup 313 615n60 BUZ 840 SGU06N60 BUP 307D
Contextual Info: s Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs tp :/ se /ww m w ic .s on ie du me ct ns or .d / e/ ht Product Information 04. 98 Fast IGBTs S-FET SO-8 D-PAK I-PAK MOS-Transistors in alphanumeric order VDS [V] R DSon [⏲] VGS th [V] I D [A] Package

BUZ MOSFET

Abstract: mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S
Contextual Info: SIEMENS Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs U ♦ BS 107 200 26.00 0.8. 2.0 0.13 TO-92 BSS 192 -240 20.00 -2.0. .-0.8 BS 170 60 5.00 0.8. 2.0 0.30 TO-92 BSS 229 250 100.00 -1.8. .-0.7 0.07 TO-92 BSO 307N 30 0.075 1.2. 2.0 4.2 SO-8

FREDFET

Abstract: 8A74
Contextual Info: SIEMENS AKTIEN6ESELLSCHAF SIE D fl235b05 0 0 4 2 n s SG5 • S I E G -T -3 5 -/ / SIEMENS SIPMOS Leistungstransistoren SIPMOS* Power Transistors FREDFET-Anreicherungstypen mit schneller Inversdiode N-Kanal FREDFET enhancement types with high speed reverse

0AB7

Abstract: BUZ p channel BUZ384
Contextual Info: SIEMENS SIPMOS Leistungstransistoren SIPMOS® Power Transistors FREDFET-Anreicherungstypen mit schneller Inversdiode N-Kanal FREDFET enhancement types with high speed reverse diodes (N channel) Typ Type M ds ^D S(on)m ax Id P tot V n A W Bestellnummer Ordering code

BUZ210

Abstract: Siemens t35 a1105 BUZ 215 FREDFET s132 C67078-A1400-A2 C67078-A3205-A2 C67078-A3207-A2 C67078-A3209-A2
Contextual Info: SIE M EN S A K T I E N 6 E S E L L S C H A F SIE T> WÊ û 2 3 5 bO S GOMSnS SGS B I S I E 6 t S IE M E N S 35 ' / / SIPMOS Leistungstransistoren SIPMOS® Power Transistors FREDFET-Anreicherungstypen mit schneller Inversdiode N-Kanal FREDFET enhancem ent types with high speed reverse

ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle

SM1251

Abstract: 74LS11 pin configuration BUZ 215 diagram
Contextual Info: S3C7295/P7295 1 PRODUCT OVERVIEW PRODUCT OVERVIEW OVERVIEW The S3C7295 single-chip CMOS microcontroller has been designed for high performance using Samsung's newest 4-bit CPU core, SAM47 Samsung Arrangeable Microcontrollers . With an up-to-704-dot LCD direct drive capability, and flexible 8-bit timer/counter, the S3C7295 offers an

BUZ 215 diagram

Abstract: F80H S3C7281
Contextual Info: S3C7281 1 PRODUCT OVERVIEW PRODUCT OVERVIEW OVERVIEW The S3C7281 is a SAM48 core-based 4-bit CMOS single-chip microcontroller. It is built around the SAM48 core CPU and contains ROM, RAM. 14 I/O lines, buzzer and inverted buzzer output, and LCD driver/controller with an

RPY 86

Abstract: valvo halbleiter RPY94 CQY 24 BV EI 30-20 3001 LDR 03 diode byx 64 600 valvo transistoren KP101A BAV99-1
Contextual Info: Elektronik. Wir bauen die Elemente. v a i v D Halbleiterbauelemente Produktprogramm DH, April 1984 Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die Mikroelektronik - entwickelt sich immer rascher zum Motor für eine Vielzahl von Innovationen. Mit gründ­

induction cooker circuit diagram

Abstract: tm1628 induction cooker free circuit diagram S3F84B8 FGA15N120 IGBT INDUCTION COOKER CIRCUIT DIAGRAM LM339 N induction cooker circuit diagram S3F84B8_DEMO_V0.0 control circuit of induction cooker lm339 pwm diagram diagram induction cooker
Contextual Info: S3F84B8 All-in-One IH Cooker Revision 0.00 May 2010 Application Note  2010 Samsung Electronics Co., Ltd. All rights reserved. Important Notice The information in this publication has been carefully checked and is believed to be entirely accurate at the

BUZ 215 diagram

Abstract: KS57C21632 KS57P21632 SAM47 AS50D-A BT 9843
Contextual Info: Product Overview Address Spaces Addressing Modes Memory Map KS57C21632/P21632 1 PRODUCT OVERVIEW PRODUCT OVERVIEW OVERVIEW The KS57C21632 single-chip CMOS microcontroller has been designed for high performance using Samsung's newest 4-bit CPU core, SAM47 Samsung Arrangeable Microcontrollers .