BUT131A Search Results

vbe 10v, vce 500v NPN Transistor

Abstract: npn high voltage transistor 500v 8a vce 500v NPN Transistor BUT131 BUT131A BUT13
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BUT131/A DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 450V(Min)- BUT131 500V(Min)- BUT131A ·High Switching Speed APPLICATIONS ·Designed for use in converters, inverters, switching

NFE 02 352

Abstract: 131H BUT131 BUT131A BUT131H L100 82S2 BUT13 BUT31
Contextual Info: [ [ bbS3T31 DEVELOPMENT DATA O G lflflb ? X T h is data sheet contains advance Inform ation and specifications ara subject to change w ith o u t notice. □ • BUT131 SERIES T - 3 3 - / â N AMER PHILIPS/DISCRETE 5SE D SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a TO-220 envelope intended for use

diode 400V 4A

Abstract: DIODE 3A 1000V BUT21A 1000v 3a diode ESM3045AV BUX86 Diode 400V 5A ESM5045DV diode 400V 6A ESM3045DV
Contextual Info: N AMER PH ILIPS/ DIS CRETE 42 SSE D • ^53131 001^220 b ■ T~32-0l Power Devices HIGH SPEED, HIGH VOLTAGE DARLINGTONS in order of current rating TYPE NO. BU826 BU826A PACKAGE OUTLINE *C(DC)(tJ SOT-93 V CE(*at) MAX. a t lc tf MAX a t lc 375V 400V 2V at 2.5A

Contextual Info: [ t ^^53= 131 DEVELOPMENT DATA Q D lflflh ? This data sheat contains advance Information and specifications are subject to change w ithout notice. _ Q A BUT131 SERIES T - 33-/3 N AUER PHILIPS/DISCRETE 5SE I> SILICON DIFFUSED POWER TRANSISTORS

ESM40

Abstract: BUT21A bux86 philips semiconductor ESM6045DV 10a 1000v to220a DIODE 3A 1000V ESM4045DV 1000v 3a diode SOT93 diode 6A 1000v
Contextual Info: N AMER PHILIPS/DISCRETE 55E D • bt353tm Q01b22Q b ■ T~32-0t Power Devices HIGH SPEED, HIGH VOLTAGE DARLINGTONS in order of current rating PACKAGE OUTLINE *C(DC)W SOT-93 BUV90 SOT-93 BUV90F SOT-199 ESM3045AV ËSM3045DV VCE(*at) MAX. a t lc ff MAX a t lc

BUS11A PHILIPS SEMICONDUCTOR

Contextual Info: N AUER PHILIPS/DISCRETE 25E D • bb53,m Q01b22Q b ■ T~32-0t Power Devices HIGH SPEED, HIGH VOLTAGE DARLINGTONS in order of current rating PACKAGE O U T LIN E *C(DC)(U V CBO V CEO SOT-93 6A 800V 900V BUV90 SOT-93 12A BUV90F SOT-199 ESM3045AV ESM 3045DV

NFE 02 352

Abstract: UT131 131H BUT131 BUT131A BUT131H BUT13
Contextual Info: [ bbS3T31 DEVELOPMENT DATA Jl OGlBflb? □ • BUT131 SERIES This data sheet contains advance Information and specifications are subject to change without notice. T - 3 S - / â N AUER PHILIP S /D IS C R E TE 5SE D SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-spaed, glass-passivated npn power transistors in aT O -220 envelope intended for use