BUP40 Search Results

BUP40

Abstract: BUP41 LE17
Contextual Info: SEMELAB 3?E LTD D 6133107 D0G014Ô SEMELAB JUN 2 6 1987 BUP40 EW PRODUCT 'U S I L I C O N PNP MECHANICAL DATA EPITAXIAL PLANAR 2.8 .7 .8 . m ax. 3-2l 3.0 j 3.75 -¿ J t 11.1 m ax. FEATURES • Very low V ce sat TUU T ÜÜÜ , 1.2 • High gain at high current

Contextual Info: SIEMENS BUP400D IGBT W ith Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Pin 1 Pin 2 G Type BUP 400D VCE 600V 22A Pin 3 C E Package Ordering Code

BUP40

Abstract: bup401 LE17 BUP41
Contextual Info: 5EMELAB NEW PRODUCT BUP40 SILICON PIMP EPITAXIAL PLANAR MECHANICAL DATA D im e n s io n s in m m FEATURES 2.8 max • VERY LOW VcE sat 3.75 • HIGH GAIN AT HIGH CURRENT • VERY FAST SWITCHING • NPN COMPLEMENT BUP 41 c ;b 'L 58k- 0.5 0.88 2.29 max TO 126

Magnatec

Abstract: BUP41 fast switching pnp transistor 3A 60V "NPN Transistor" BUP40 LE17 npn transistor
Contextual Info: SILICON EPITAXIAL PLANAR NPN TRANSISTOR Tfelectronics MAGNATEC ¡^ ] BUP41 • PNP C om plim ent BUP40 • High Gain at High Current • Very fast Switching ABSOLUTE M A X IM U M RATINGS T a = 2 5 °C unless otherwise stated v CBO Collector - Base Voltage

BUP314

Abstract: BUP307 igbt types siemens bup314 BUP401 BUZ334 BUZ MOSFET MOSFET welding INVERTER 334 mosfet flyback inverter welding
Contextual Info: APPLICATIONS POWER SEMICONDUCTORS Andreas Bachofner ● Michael Herfurth ● Michael Schmitt High-speed IGBTs: Fast switching at an attractive price Developed from secondgeneration IGBTs, highspeed IGBTs insulated gate bipolar transistors are particularly economical for

BUP400D

Abstract: SGP10N60 bup400
Contextual Info: SGP10N60 Preliminary data IGBT • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 1 Pin 2 G Pin 3 C E Type VCE IC Package Ordering Code SGP10N60 600V 10A TO-220 AB Q67040-A . . . . Maximum Ratings

BUP402

Contextual Info: SIEMENS BUP 402 IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 1 Pin 2 G Type BUP 402 VCE 600V h 36A C Pin 3 E Package Ordering Code TO-220 AB C67078-A4405-A2 Maximum Ratings

SKiip 83 EC 125 T1

Abstract: SKiiP 82 AC 12 T1 SKiiP 81 AN 15 T1 semikron SKHI 22 SPICE MODEL semikron skiip 32 nab 12 T7 SKiip 83 EC 12 1 T1 SKiiP 24 NAB 063 T12 skiip 83 ac 128 BUZ78 equivalent SKIIP 81 AC 12 I T1
Contextual Info: 0 Betriebsweise von Leistungshalbleitern Betriebsweise von Leistungshalbleitern 0.1 Elementare Schaltvorgänge Leistungshalbleiter arbeiten bis auf wenige Sonderanwendungen im Schalterbetrieb. Daraus resultieren grundlegende Prinzipien und Funktionsweisen, die in allen leistungselektronischen

irfb4115

Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
Contextual Info: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

bup400d

Contextual Info: Preliminary data SIEMENS SGP10N60, SGB10N60, SGW10N60 Fast S-IGBT in NPT-Technology • 75 % lower E0ff compared to previous generation combined with low conduction losses • Short circuit withstand time 10 is • Designed for moderate and high frequency applications:

Contextual Info: SIEMENS BUP 401 IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 1 Pin 2 G Type BUP 401 VCE 600V >c 29A C Pin 3 E Package Ordering Code TO-220 AB C67078-A4404-A2 Maximum Ratings

BU409D

Abstract: BU930P BU606 SOT93 BU526 BU500 BU932 bu626a BU912 BU426
Contextual Info: Type No. Reliability Option Polarity Package v C EO •c cont hF E @ Vce /'C «T PD 10M 10M 10M 6M 6M 60 60 60 70 70 6M 70 75 125 125 120 BU408D BU409 BU409D BU426 BU426A NPN NPN NPN NPN NPN T0220 T0220 T0220 SOT 93 SOT93 200 150 150 375 400 7 7 7 6 6 5min

BU930

Abstract: SOT93 BU409 BU500 BU606 BU930P T0220 BU4090 BU800 BU912
Contextual Info: Type No. Ó“ ' «•*» Package v CEO ■c PD hFE« V ce /'C 7 7 7 5/1 5/1 5/1 5/0.6 5/0.6 10M 10M 10M 6M 6M 60 60 60 70 70 6M 70 75 125 125 cont BU408D BU409 BU409D BU426 BU426A NPN NPN NPN NPN NPN T0220 T0220 T0220 SOT 9 3 SOT93 200 375 400 6 6 5min 5min

ba606

Abstract: BU500
Contextual Info: S E N E LA B LTD 37E D fll331fl7 D D Ü 0 0 S 4 3 • S f l L B «'¡I { t ¿S ÍÉ £ á U & 3 ft fc a n ¿^ ¡£ U 3 t t H fií¿á Type No. Option"*^ Polarlty Paoka9e V CEO ¡ £ nt cont hF E @ VCE/>C Pd BU408D BU409 BU409D BU426 BU426A NPN NPN NPN NPN

BUP41

Abstract: BUP40 LE17
Contextual Info: SEMELAB LTD 37E 0133107 D 000D1SD SEM ELAB JUN 2 6 195/ BUP41 NEW PRODUCT S ILIC O N NPN MECHANICAL DATA EPITAXIAL PLANAR 2.8 It.I max. o 7 .8 . max. 3.2, 31 3.75 FEATURES nnn • Very low V ce sat 1.2 • High gain at high current T 2 .5 4 max. 15.3 min.

10A600V

Abstract: 1XGH20N60AU1 IGBT cross reference HGTP20N6QB3 IXSH20N60AU1 20a600v 12A600V CT60AM-20 5N60RUFD 5A1200V
Contextual Info: SAMSUNG IGBT TOSHIBA MOTOLORA HARRIS SIEM ENS IXYS HUfU3NÖ0B3S hü'mSNtäoöä U ltiJ 102 H U IU /N Ö Ü B 3 HGIP12NB0B3 IXGP10N60A U 115J101 IXGH10N60A HGTP20N6QB3 GT25JT01 HGlu2UfJt>063 IXGH20N6QA IXGH24N6QA HU Î J4UNöUt33 IXGH40N60A IXGH50N6ÛA, HU I P^NbUBaU

ISPSD coolmos

Abstract: bup400d mosfet nepi
Contextual Info: Properties of the New Compensation Devices CoolMOS between 420K and 80K— the Ideal Device for Cryogenic Applications* A.E. Schlögl a), G. Deboy b), H.W. Lorenzen c), U. Linnert a), H.-J. Schulze a) and J.P. Stengl b) a) SIEMENS AG, Corporate Technology, Research Center Power Electronics, Otto-Hahn-Ring 6, 81730 Munich, Germany

SGH80N60RUFD

Abstract: bup314 equivalent bup314d SGH30N60UFD SGU06N60 BUP314 motorola diode cross reference mgy20n120d IXDH30N120AU1 SGP15N120
Contextual Info: Infineon Technologies Cross Reference List Fast IGBT & DuoPack Company Product Name Fairchild * Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*)

LE17

Abstract: bup41
Contextual Info: SEMELAB B U P40 O4 1 S O A -I -7 C o U « lo r T o E rrv.li«« V o lt » « « . V « - V 1,-le -3 -5 - 7 -1 0 -J -J -5 - 7 -1 0 0 C o lu t ili# lo B a u Vo*N>u« V c - V t 1— I-1 \ N v\ \ % % \ IV« / in -«0 -««I Coliocso» C v n a n t . le - A S E M E L A B L T D . , C O V c N T R Y RO AO . LU T 7 E n v Y 0 R TM . IE IC S LE1 7 <U8

bup400d

Abstract: Q67041-A4710-A2 bup400 IC Packages SGP10N60 siemens igbt SGB10N60 SGW10N60 Q67040S4234 BUP400D SMD
Contextual Info: Preliminary data SGP10N60, SGB10N60, SGW10N60 Fast S-IGBT in NPT-Technology • 75 % lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time 10 µs • Designed for moderate and high frequency applications: