SGP10N60 Search Results

Contextual Info: SIEMENS SGP10N60 P relim inary data IGBT • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Type VCE SGP10N60 600V 10A Package Ordering Code TO-220 AB Q67040-A . . . . Maximum Ratings Parameter

Contextual Info: SGP10N60RUFD 600 V, 10 A Short Circuit Rated IGBT General Description Features Fairchild’s RUFD series of Insulated Gate Bipolar Transistors IGBTs provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control,

SGP10N60

Contextual Info: SGP10N60RUFD Short Circuit Rated IGBT General Description Features Fairchild's RUFD series of Insulated Gate Bipolar Transistors IGBTs provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control,

Contextual Info: SGP10N60RUFD CO-PAK IGBT FEATURES * Short Circuit rated 10|is @ Tc=100°C * High Speed Switching * Low Saturation Voltage : VCE sat = 2.1 V @ lc=10A * High Input Impedance * CO-PAK, IGBT with FRD : Trr = 50ns (Typ) APPLICATIONS * * * * * AC & DC Motor controls

SGP10N60RUF

Contextual Info: SGP10N60RUF Short Circuit Rated IGBT General Description Features Fairchild's RUF series of Insulated Gate Bipolar Transistors IGBTs provide low conduction and switching losses as well as short circuit ruggedness. The RUF series is designed for applications such as motor control,

SGP10N60RUFD

Contextual Info: IGBT SGP10N60RUFD Short Circuit Rated IGBT General Description Features Fairchild's Insulated Gate Bipolar Transistor IGBT RUFD series provides low conduction and switching losses as well as short circuit ruggedness. RUFD series is designed for the applications such as motor control, UPS and general

BUP400D

Abstract: SGP10N60 bup400
Contextual Info: SGP10N60 Preliminary data IGBT • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 1 Pin 2 G Pin 3 C E Type VCE IC Package Ordering Code SGP10N60 600V 10A TO-220 AB Q67040-A . . . . Maximum Ratings

Contextual Info: N-CHANNEL IGBT SGP10N60RUF FEATURES TO-220 * Short Circuit rated 10[is @ Tc=100°C * High Speed Switching * Low Saturation Voltage : V CE sat = 1.95 V @ lc=10A * High Input Impedance îc APPLICATIONS * * * * * AC & DC Motor controls General Purpose Inverters

Contextual Info: SGP10N60RUFD CO-PAK IGBT FEATURES * Short Circuit rated 10[is @Tc=100°C * High Speed Switching * Low Saturation Voltage : VCE sat = 2.1 V @ lc=10A * High Input Impedance * CO-PAK, IGBT with FRD : Trr = 50ns (Typ) APPLICATIONS * AC & DC Motor controls * General Purpose Inverters

SGP10N60RUF

Contextual Info: SGP10N60RUF FEATURES N-CHANNEL IGBT TO-220 * Short Circuit rated 10µs @TC=100°C * High Speed Switching * Low Saturation Voltage : VCE sat = 1.95 V @ IC=10A * High Input Impedance APPLICATIONS * AC & DC Motor controls * General Purpose Inverters * Robotics , Servo Controls

7222

Abstract: A001 SGP10N60 SIGC12T60SNC
Contextual Info: Preliminary SIGC12T60SNC IGBT Chip in NPT-technology C FEATURES: • 600V NPT technology • 100µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type VCE This chip is used for: • SGP10N60 G Applications: • drives

bup400d

Contextual Info: Preliminary data SIEMENS SGP10N60, SGB10N60, SGW10N60 Fast S-IGBT in NPT-Technology • 75 % lower E0ff compared to previous generation combined with low conduction losses • Short circuit withstand time 10 is • Designed for moderate and high frequency applications:

G10N60A

Abstract: g10n60 SGW10N60A G10N60A DATASHEET SGP10N60A inverter 12 to 220 100w PG-TO-247-3-21 PG-TO-220-3-1 PG-TO-247-3 G10N
Contextual Info: SGP10N60A SGW10N60A Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs G E • Designed for: - Motor controls - Inverter PG-TO-247-3 • NPT-Technology for 600V applications offers:

g10n60

Abstract: SGP10N60A
Contextual Info: SGP10N60A SGW10N60A Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs G E • Designed for: - Motor controls - Inverter PG-TO-247-3-21 • NPT-Technology for 600V applications offers:

SGB10N60A

Abstract: SGP10N60A SGW10N60A Q67040-S4510
Contextual Info: SGP10N60A Preliminary SGB10N60A, SGW10N60A Fast-IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:

Contextual Info: SIGC12T60SNC IGBT Chip in NPT-technology C FEATURES: • 600V NPT technology • 100µm chip • short circuit prove • positive temperature coefficient • easy paralleling This chip is used for: • SGP10N60 G Applications: • drives Chip Type VCE ICn

SGW10N60A

Abstract: sgp10n60a SGB10N60A Q67040-S4510
Contextual Info: SGP10N60A, SGB10N60A SGW10N60A Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:

igbt 300V 10A datasheet

Abstract: SGP10N60RUF
Contextual Info: IGBT SGP10N60RUF Short Circuit Rated IGBT General Description Features Fairchild's Insulated Gate Bipolar Transistor IGBT RUF series provides low conduction and switching losses as well as short circuit ruggedness. RUF series is designed for the applications such as motor control, UPS and general

SGP10N60RUFD

Contextual Info: SGP10N60RUFD Short Circuit Rated IGBT General Description Features Fairchild's RUFD series of Insulated Gate Bipolar Transistors IGBTs provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control,

Contextual Info: SGP10N60RUF FEATURES N-CHANNEL IGBT TO-220 * Short Circuit rated 10uS @Tc=100°C * High Speed Switching * Low Saturation Volatge : VCE sat = 1.95 V @ lc=10A * High Input Impedance APPLICATIONS * AC & DC Motor controls * General Purpose Inverters * Robotics , Servo Controls

Contextual Info: Preliminary SIGC12T60SNC IGBT Chip in NPT-technology C FEATURES: • 600V NPT technology • 100µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type VCE This chip is used for: • SGP10N60 G Applications: • drives

SGP10N60

Abstract: SIGC12T60SNC
Contextual Info: SIGC12T60SNC IGBT Chip in NPT-technology C FEATURES: • 600V NPT technology • 100µm chip • short circuit prove • positive temperature coefficient • easy paralleling This chip is used for: • SGP10N60 G Applications: • drives Chip Type VCE ICn

Contextual Info: SGP10N60RUFD 600 V, 10 A Short Circuit Rated IGBT General Description Features Fairchild ’s RUFD series of Insulated Gate Bipolar Transistors IGBTs provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control,

G10N60A

Abstract: g10n60 G10N60A DATASHEET SGW10N60A SGP10N60A IGBT 1500 igbt 1000v 10A PG-TO-220-3-1 PG-TO-247-3 PG-TO-247-3-21
Contextual Info: SGP10N60A SGW10N60A Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs G E • Designed for: - Motor controls - Inverter PG-TO-247-3 • NPT-Technology for 600V applications offers: