SIEMENS 1200
Abstract: siemens dioden bup203 C67078-A4400-A2
Contextual Info: SIEMENS IGBTLeistungstransistoren Bestellnummer Ordering code h LU Typ Type IGBT Power transistors A Gehäuse Package Bild Figure BUP 202 1000 12.0 C67078-A4401-A2 TO-220 AB 8b BUP 203 1000 21.0 C67078-A4402-A2 TO-220 AB 8b BUP 302 1000 12.0 C67078-A4205-A2
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c67078-a4401-a2c67078-a4402-a2c67078-a4205-a2c67078-a4202-a2+7c67078-a4200-a2o-220o-218siemens 1200siemens diodenbup203c67078-a4400-a2
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BUP 307
Abstract: transistor 304 transistor d 304 bup transistor bup307 transistor 307 bup 200 transistor
Contextual Info: SIEMENS BUP 304 BUP 307 IGBT High Power Switch VCE = 1000 V /1 2 0 0 V = 25 A lc • • • • • • • • • N channel MOS input (voltage-controlled) Low forw ard voltage drop High sw itching speed Very low tail current Low tem perature sensitivity
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o-2187078-a200-a201-a+8100msbup 307transistor 304transistor d 304bup transistorbup307transistor 307bup 200 transistor
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1187 GE
Contextual Info: SIEMENS BUP 304 IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 1 Pin 2 G Type BUP 304 VfcE 1000V 35A C Pin 3 E Package Ordering Code TO-218AB Q67078-A4200-A2 Maximum Ratings
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o-218abq67078-a4200-a21187 ge |
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A4200
Abstract: bup304 BUP 200 Q67078-A4200-A2
Contextual Info: BUP 304 IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 1 Pin 2 G Type VCE IC BUP 304 1000V 35A Pin 3 C E Package Ordering Code TO-218 AB Q67078-A4200-A2 Maximum Ratings
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o-218q67078-a4200-a2jul-30-1996a4200+2bup304bup 200
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A4200
Abstract: bup304 PS 307 5A 65027 C3523 BUP 307 Q67078-A4200-A2 BUP 304
Contextual Info: I ! SIEMENS BUP 304 IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 1 Pin 2 G Type l^CE h 1000V 35A BUP 304 Pin 3 C E Package Ordering Code TO-218 AB Q67078-A4200-A2
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o-218q67078-a4200-a26e35b05s235b05+8d0fls031a4200bup304ps 307 5a65027c3523bup 307bup 304
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Contextual Info: SIEMENS BUP 304 IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 1 Pin 2 G Type BUP 304 ^CE h 1000V 35A C Pin 3 E Package Ordering Code TO-218AB Q67078-A4200-A2 Maximum Ratings
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o-218abq67078-a4200-a26235b050d65g30+2t05156235bg5
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307d
Abstract: vqe 14 E P 307 diode 307d
Contextual Info: SIEMENS BUP 307D IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Pin 1 Pin 2 G Type VC E BUP 307D 1200V 35A h Pin 3 E C Package Ordering Code
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o-218q67040-a4221-a2dec-02-1996307d+3vqe 14 ep 307diode 307d
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TRANSISTOR JC
Abstract: 748 transistor on transistor 304 transistor 307 bup304 bup transistor bup 200 transistor
Contextual Info: SIEMENS IGBT Transistors • • • • • • • • • BUP 304 N channel MOS input voltage-controlled Low forward voltage drop High switching speed Very low tail current Low temperature sensitivity Avalanche-rated Latch-up-free Suitable free wheeling diode
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o-218c67078-a4200-a2c67078-a4201-a2transistor jc+6748 transistor ontransistor 304transistor 307bup304bup transistorbup 200 transistor
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BUP 312
Abstract: BUZ22 276 603d BUZ 81 bup300 buz171 BUP314D BUZ,350 BUZ,271 BUZ90A
Contextual Info: SIEMENS Typ Type Alphanumerische Typenliste List of Types in Alphanumerical Order Bestellnummer Ordering Code Seite Page Typ Type BUP 200 Q67078-A4400-A2 1125 • BUZ 11 A C67078-S1301 -A3 177 BUP200D Q67040-A4420-A2 1132 ■ BUZ 11 AL C67078-S1330-A3 186
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bup200dbup314dbup410dq67078-a4400-a2+15q67040-a4420-a2q67078-a4401-a2q67078-a4402-a2q67040-a4407-a2q67078-a4203-a2q67078-a4205-a2bup 312buz22276 603dbuz 81bup300buz171buz,350buz,271buz90a
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Contextual Info: # w m s CM30TF-12H r Powerex, Inc., 200Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 S¡X~IGBT IGBTMOD H-Series Module 30 Amperes/600 Volts BuP EuP BvP EvP BwP EwP 50 4 0 ^ 0 4 r -1 S - DIA— (2 TYP.) BuN EuN i - i B w N E vN r-i — K— — H-
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cm30tf-12h200hillisamperes/60000cne43 |
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BUN DIODE
Abstract: BUP 304 600v 30a IGBT BUP 300 CM30 bup 304 equivalent bup 77 CM30TF-12H H bridge 300v 30a 12A1000
Contextual Info: CM30TF-12H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Six-IGBT IGBTMOD H-Series Module 30 Amperes/600 Volts A B Q Q R BuP P R EuP BvP BuN EuN BvN R EvP BwP EwP EvN BwN EwN P J U N S - DIA. (2 TYP.) V K H L W H E
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cm30tf-12hamperes/600bun diodebup 304+7600v 30a igbtbup 300cm30bup 304 equivalentbup 77h bridge 300v 30a12a1000
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buz 342 G
Abstract: DIODE BUZ z347 BUP 312 diode z104 z349 z332a IGBT P213 DIODE BUZ 300 buz91a
Contextual Info: Gehäuseübersicht Package Information N-Kanal Leistungstransistoren Forts. N Channel Power Transistors G D S G TO-220 AB VDS V 50 50 50 50 50 50 50 50 50 50 50 50 50 50 60 60 60 60 60 100 100 100 100 100 100 100 100 RDS(on) Ω 10 m 18 m 23 m 28 m 30 m
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o-220o-218346s2buo-218+10buz 342 gdiode buzz347bup 312diode z104z349z332aigbt p213diode buz 300buz91a
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leistungstransistoren
Abstract: bup314d buz 342 G siemens 230 95 O BUP 307D BUZ,350 BUZ,271 BUP400D bup313d BUP314
Contextual Info: SIEMENS Gehäuseübersicht Package Information N-Kanal Leistungstransistoren N Channel Power Transistors D i A PN \ ° s TO-220 AB *D S ^ D S o n V 50 50 50 50 50 50 50 50 50 50 50 50 50 50 60 60 60 60 60 100 100 100 100 100 100 100 100 Q 10 18 23 28 m
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o-220buz12abuz11s2buz10s2+13o-218346s2bup410dleistungstransistorenbup314dbuz 342 gsiemens 230 95 obup 307dbuz,350buz,271bup400dbup313dbup314
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buz 350 equivalent
Abstract: BUP 203 transistor buz 36 BUP 312 BUP 304 leistungstransistoren bup 401 datasheet transistor buz 350 bup 213 BUP 309
Contextual Info: Typenübersicht Selection Guide • Leistungstransistoren Forts. ■ Typ VDS ■ Type V 50 50 60 50 50 60 50 50 50 50 100 100 100 100 200 200 200 200 500 500 500 1000 1000 1000 1000 400 400 400 60 60 50 50 50 ■ BUZ 10 ■ BUZ 10L ■ BUZ 10S2 ■ BUZ 11
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o-220o-218buz 350 equivalentbup 203+8transistor buz 36bup 312bup 304leistungstransistorenbup 401 datasheettransistor buz 350bup 213bup 309
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BUP 300
Abstract: al394 Buz 304 s1348 S1338 buz 210 0C67O78-S311O-A2 BUZ325 S1314 S1313
Contextual Info: SIEM ENS Bestellnummer Ordering Code Typ Type 0C67O47-A2O66-A2 BYP 103 0C67O47-A2O71-A2 BYP 102 0C67O47-A2O72-A2 BYP 101 0C67O47-A225O-A2 BYP 300 0C67O47-A2251-A2 BYP 301 0C67O47-A2252-A2 BYP 302 0C67O47-A2253-A2 BYP 303 0C67O47-A2254-A2 BYP 100 0C67O78-A1008-A8
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0c67o47-a2o66-a20c67o47-a2o71-a20c67o47-a2o72-a20c67o47-a225o-a2+160c67o47-a2251-a20c67o47-a2252-a20c67o47-a2253-a20c67o47-a2254-a20c67o78-a1008-a80c67o78-a1oo8-a9bup 300al394buz 304s1348s1338buz 2100c67o78-s311o-a2buz325s1314s1313
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BUZ332A
Abstract: BUZ54A BUZ,350 BUZ p channel BUP 312 BUZ,271 Buz94 BUZ357 buz 91 f BUZ345
Contextual Info: Typenübersicht Selection Guide SIEM ENS SIPMOS Power Transistors N Channel Power Transistors s > 7 X s TO-220 AB ^D S ^ D S o n V Q 50 50 50 50 50 50 50 50 50 18m 28m 30m 35m 40m 55m 70m 0.1 0.12 60 60 60 60 60 18m 40m 70m 0.10 0.15 100 100 100 100 100
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vut05152o-220o-218o-204+11346s2buz332abuz54abuz,350buz p channelbup 312buz,271buz94buz357buz 91 fbuz345
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thyristor Q 720 To220
Abstract: siemens bsm200ga120dn2 bup transistor BSM50GD120DN2 BSM15GD siemens igbt BSM100GB120DN2 BSM30GD60DN2 BSM25GD120DN2 BSM20GD60DN2
Contextual Info: APPLICATIONS POWER SEMICONDUCTORS Andreas Bachofner ● Mario Feldvoss ● Sven Konrad ● Thomas Laska Second-generation IGBTs: The mighty midgets Contemporary power electronics applications call for smaller, lighter and more rugged components. They must also consume less energy, have a wider dynamic
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thyristor q 720 to220siemens bsm200ga120dn2bup transistorbsm50gd120dn2+6bsm15gdsiemens igbtbsm100gb120dn2bsm30gd60dn2bsm25gd120dn2bsm20gd60dn2
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BUZ MOSFET
Abstract: mosfet BUZ 326 BUP 312 BSS 130 BUP 304 bup 313 615n60 BUZ 840 SGU06N60 BUP 307D
Contextual Info: s Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs tp :/ se /ww m w ic .s on ie du me ct ns or .d / e/ ht Product Information 04. 98 Fast IGBTs S-FET SO-8 D-PAK I-PAK MOS-Transistors in alphanumeric order VDS [V] R DSon [⏲] VGS th [V] I D [A] Package
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615nvot-22320iemensb152-h6493-g5-x-7600+10buz mosfetmosfet buz 326bup 312bss 130bup 304bup 313615n60buz 840sgu06n60bup 307d
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STR-G6551
Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
Contextual Info: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision
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2002-sepstr-g6551str-f6654g6551+7tda16822str-f6653strg6551igbt cross referenceka5m0565rtop224y equivalentbup 312
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BUZ MOSFET
Abstract: mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S
Contextual Info: SIEMENS Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs U ♦ BS 107 200 26.00 0.8. 2.0 0.13 TO-92 BSS 192 -240 20.00 -2.0. .-0.8 BS 170 60 5.00 0.8. 2.0 0.30 TO-92 BSS 229 250 100.00 -1.8. .-0.7 0.07 TO-92 BSO 307N 30 0.075 1.2. 2.0 4.2 SO-8
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615nvbsp318sbuz mosfetmosfet buz 326+8buz mosfet 334spd14n05mosfet buz 349mosfet buz 90abuz 100 mosfetbup202buz mosfet 102sbuz mosfet 111s
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bsm10gd100dn1
Abstract: BSM10GD100DN BTS 302 BSM10GD100 E6327 BUZ 324 E6288 eTS 410 siemens bsm 101 AR C67076-A2505-A52
Contextual Info: SIEMENS Typ/Bestellnummern Type/Ordering Codes Ordering code Type BRT 11 H C67079-A1000-A6 BSM 50 GAL 100 D C67076-A2002-A2 BRT 11 H Option 7 C67079-A1040-A11 BSM 50 GAL 120 D C67076-A2010-A2 BRT 11 H Option 1 + 7 C67079-A1040-A17 BSM 50 GB 100 D C67076-A2100-A2
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e-6288bsm10gd100dn1c67079-a1000-a6c67079-a1040-a11+14c67079-a1040-a17c67079-a1001-a6c67079-a1041-a5c67079-a10436e-6327bsm10gd100dnbts 302bsm10gd100e6327buz 324e6288ets 410siemens bsm 101 arc67076-a2505-a52
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TDA 7400 ic
Abstract: sn 7600 n SLE4520 4918 BUP 312 semiconductors cross reference TDA4716a B152-B6294-X-X-7400 SLE 78 transistors cross reference list
Contextual Info: SIEM ENS Literaturhinweise Information on Literature Titel Title Ausgabe Seiten Edition Pages Bestell-Nr. Ordering No. DM Datenbiicher/Data Books SIPMOS-Halbleiter/SIPMOS Semiconductors Power Modules SIMOPAC/IGBT 90/91 11.92 1192 312 B152-B6294-X-X-7400 B152-H6570-X-X-7600
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000-wtda 7400 icsn 7600 nsle4520+74918bup 312semiconductors cross referencetda4716ab152-b6294-x-x-7400sle 78transistors cross reference list
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BUP101
Abstract: BTS412A buz 607 BTS 304 BUZ 324 BSM181C BTS 413 bsm681f Q62702-S616 62702-S393
Contextual Info: Bestellnummern/Ordering Codes Type Ordering code BRT 11 H BRT 11 M B R T 12H BRT 12 H Option 1 BRT 12 H (Option 6) BRT 12 H (Option 7) BRT 12 H (Option 1+6) BRT 12 H (Option 1+7) BRT 12M BRT 1 3 H BRT 1 3 M BRT 21 H BRT 21 M BRT 22 H BRT 22 H (Option 1)
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150gb0610tc67078-s3126-a2c67078-s3133-a2+16c67078-s3128-a2c67078-s3121-a2c67078-s3120-a2c67078-s3131-a267078-s3115-a2c67078-s3113-a2bup101bts412abuz 607bts 304buz 324bsm181cbts 413bsm681fq62702-s61662702-s393
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siemens igbt BSM 25GD 100D
Abstract: siemens igbt BSM 25gd bsm25gd100d BSS 97 bts412a BSM15GD100D BTS 131 SIEMENS Bts 629 BSS145 siemens igbt BSM 25 gb 100 d
Contextual Info: Typenübersicht/Selection Guide SIPMOS Power MOS Transistors Families of Types Type ^DS(max) ^D S(on)m ax ^D{max] V Q A Ptoi Package Page W N channel enhancement types £ 0 BUZ 10 EÜL BUZ 10 L 50 0.07 0.07 23 23 75 75 TO-220AB TO-220AB 690 700 £ □ BUZ 11
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o-220abo-2202x1002x150+11100galsiemens igbt bsm 25gd 100dsiemens igbt bsm 25gdbsm25gd100dbss 97bts412absm15gd100dbts 131 siemensbts 629bss145siemens igbt bsm 25 gb 100 d
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