BUP 213 Search Results

A4407

Abstract: C32TC Q67040-A4407-A2
Contextual Info: BUP 213 IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Type VCE IC BUP 213 1200V 32A Pin 1 Pin 2 Pin 3 G C E Package Ordering Code TO-220 AB Q67040-A4407-A2 Maximum Ratings

A4407

Abstract: BUP 200 Q67040-A4407-A2 Semiconductor Group igbt bup213 bup 213
Contextual Info: BUP 213 IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Type VCE IC BUP 213 1200V 32A Pin 1 Pin 2 Pin 3 G C E Package Ordering Code TO-220 AB Q67040-A4407-A2 Maximum Ratings

Contextual Info: SIEMENS BUP 213 IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Type Pin 2 Pin 3 G C E Package Ordering Code TO-220 AB Q67040-A4407-A2 V'CE h 1200V 32A BUP 213 Pin 1 Maximum Ratings

A4407

Abstract: Infineon IGBT BUP 200 Ultrasonic Transducer for flowmeter Q67040-A4407 infineon package bup 213 bup213
Contextual Info: BUP 213 Infineon IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Type VCE IC BUP 213 1200V 32A Pin 1 Pin 2 Pin 3 G C E Package Ordering Code TO-220 AB Q67040-A4407 Maximum Ratings

Contextual Info: SIEMENS BUP 213 IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Type BUP 213 VCE 1200V 32A Pin 1 Pin 2 Pin 3 G C E Package Ordering Code TO-220 AB Q67040-A4407-A2 Maximum Ratings

Contextual Info: SIGC25T120C IGBT Chip in NPT-technology Features: • 1200V NPT technology  positive temperature coefficient  easy paralleling This chip is used for:  power module BUP 213 C Applications:  drives G Chip Type VCE IC Die Size Package SIGC25T120C

BUP213

Abstract: A001 SIGC25T120C
Contextual Info: Preliminary SIGC25T120C IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology • 200µm chip • positive temperature coefficient • easy paralleling This chip is used for: • BUP 213 C Applications: • drives Chip Type SIGC25T120C VCE ICn 1200V

BUP213

Abstract: SIGC25T120C SIGC25T120CL 280-400 BUP21
Contextual Info: Preliminary SIGC25T120C IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology • 200µm chip • positive temperature coefficient • easy paralleling This chip is used for: • BUP 213 C Applications: • drives Chip Type SIGC25T120CL VCE ICn 1200V

Contextual Info: SIGC25T120C IGBT Chip in NPT-technology Features: • 1200V NPT technology  positive temperature coefficient  easy paralleling This chip is used for:  power module BUP 213 C Applications:  drives G Chip Type VCE IC Die Size Package SIGC25T120C

BUP213

Abstract: SIGC25T120C
Contextual Info: SIGC25T120C IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology • 200µm chip • positive temperature coefficient • easy paralleling This chip is used for: • BUP 213 C Applications: • drives Chip Type SIGC25T120C VCE ICn 1200V 15A G Die Size

bup213

Abstract: BUP21
Contextual Info: SIGC25T120C IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology • 200µm chip • positive temperature coefficient • easy paralleling This chip is used for: • BUP 213 C Applications: • drives Chip Type SIGC25T120C VCE ICn 1200V 15A G Die Size

Contextual Info: SIGC25T120C IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology • 200µm chip • positive temperature coefficient • easy paralleling This chip is used for: • BUP 213 C Applications: • drives Chip Type SIGC25T120C VCE ICn 1200V 15A G Die Size

BUP 312

Abstract: BUZ22 276 603d BUZ 81 bup300 buz171 BUP314D BUZ,350 BUZ,271 BUZ90A
Contextual Info: SIEMENS Typ Type Alphanumerische Typenliste List of Types in Alphanumerical Order Bestellnummer Ordering Code Seite Page Typ Type BUP 200 Q67078-A4400-A2 1125 • BUZ 11 A C67078-S1301 -A3 177 BUP200D Q67040-A4420-A2 1132 ■ BUZ 11 AL C67078-S1330-A3 186

buz 342 G

Abstract: DIODE BUZ z347 BUP 312 diode z104 z349 z332a IGBT P213 DIODE BUZ 300 buz91a
Contextual Info: Gehäuseübersicht Package Information N-Kanal Leistungstransistoren Forts. N Channel Power Transistors G D S G TO-220 AB VDS V 50 50 50 50 50 50 50 50 50 50 50 50 50 50 60 60 60 60 60 100 100 100 100 100 100 100 100 RDS(on) Ω 10 m 18 m 23 m 28 m 30 m

buz 350 equivalent

Abstract: BUP 203 transistor buz 36 BUP 312 BUP 304 leistungstransistoren bup 401 datasheet transistor buz 350 bup 213 BUP 309
Contextual Info: Typenübersicht Selection Guide • Leistungstransistoren Forts. ■ Typ VDS ■ Type V 50 50 60 50 50 60 50 50 50 50 100 100 100 100 200 200 200 200 500 500 500 1000 1000 1000 1000 400 400 400 60 60 50 50 50 ■ BUZ 10 ■ BUZ 10L ■ BUZ 10S2 ■ BUZ 11

BUP 312

Abstract: buz 91 f BUP 303 IGBT DIODE BUZ 537 BUP 203
Contextual Info: SIEMENS Typenübersicht Selection Guide Leistungstransistoren Typ Type • BUZ 10 ■ BUZ 10L ■ BUZ10S2 ■ BUZ 11 ■ BUZ11A ■ BUZ11S2 ■ BUZ 11 AL ■ BUZ 12 ■ BUZ12A ■ BUZ 12AL BUZ 20 BUZ 21 BUZ 21L BUZ 22 BUZ 30A BUZ 31 BUZ 31L BUZ 32 BUZ 40B

thyristor Q 720 To220

Abstract: siemens bsm200ga120dn2 bup transistor BSM50GD120DN2 BSM15GD siemens igbt BSM100GB120DN2 BSM30GD60DN2 BSM25GD120DN2 BSM20GD60DN2
Contextual Info: APPLICATIONS POWER SEMICONDUCTORS Andreas Bachofner ● Mario Feldvoss ● Sven Konrad ● Thomas Laska Second-generation IGBTs: The mighty midgets Contemporary power electronics applications call for smaller, lighter and more rugged components. They must also consume less energy, have a wider dynamic

BUZ MOSFET

Abstract: mosfet BUZ 326 BUP 312 BSS 130 BUP 304 bup 313 615n60 BUZ 840 SGU06N60 BUP 307D
Contextual Info: s Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs tp :/ se /ww m w ic .s on ie du me ct ns or .d / e/ ht Product Information 04. 98 Fast IGBTs S-FET SO-8 D-PAK I-PAK MOS-Transistors in alphanumeric order VDS [V] R DSon [⏲] VGS th [V] I D [A] Package

BUZ MOSFET

Abstract: mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S
Contextual Info: SIEMENS Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs U ♦ BS 107 200 26.00 0.8. 2.0 0.13 TO-92 BSS 192 -240 20.00 -2.0. .-0.8 BS 170 60 5.00 0.8. 2.0 0.30 TO-92 BSS 229 250 100.00 -1.8. .-0.7 0.07 TO-92 BSO 307N 30 0.075 1.2. 2.0 4.2 SO-8

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

Free Creative subwoofer circuit diagrams

Abstract: creative subwoofer 4.1 diagram creative subwoofer circuit diagram 82801BA ICH2 simple subwoofer 2.1 high pass filter schematic 82801AA 82801AB AC97 "subwoofer"
Contextual Info: R Intel 82801BA I/O Controller Hub ICH2 AC ’97 Programmer’s Reference Manual (PRM) June 2000 Order Number: 298238-001 ® Intel 82801BA I/O Controller Hub (ICH2) AC ’97 PRM R Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual

PEF 24628

Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
Contextual Info: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by

82801db

Contextual Info: R Intel 82801DB I/O Controller Hub ICH4 : AC ’97 Programmers Reference Manual (PRM) May 2002 Revision 001 Document Number: 251373-001 Intel® 82801DB I/O controller Hub (ICH4) AC’97 Information in this document is provided in connection with Intel® products. No license, express or implied, by estoppel or otherwise, to any intellectual

S5 100 B112 MT RELAY

Abstract: AMP A047 CONNECTOR VAT300 relay S5 100 B112 transistor b605 A 92 B331 transistor S5 100 B112 RELAY 9F52 transistor b686 A 42 B331 transistor
Contextual Info: Cover VAT300 quick guide 14-09-2007 10:37 Page 1 GE Consumer & Industrial Power Protection GE Consumer & Industrial GE POWER CONTROLS Hornhouse Lane Knowsley Industrial Park Liverpool L33 7YQ VAT300 - User Manual GE POWER CONTROLS IBERICA Marqués de Comillas 1