BUK637 Search Results

BUK637-400A

Abstract: BUK637-400B
Contextual Info: Philips Components BUK637-400A BUK637-400B PowerMOS transistor Fast Recovery Diode FET GENERAL DESCRIPTION N-channel enhancement mode lield-effect power transistor in a plastic envelope. FREDFET with fast recovery reverse diode, particularly suitable for motor control

Contextual Info: Product Specification Philips Semiconductors PowerMOS transistor BUK637-400B Fast recovery diode FET_ _ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor In a plastic envelope. FREDFET with fast recovery

pir 500b

Contextual Info: N AtlER PHILIPS/DISCRETE E5E D • fafa53*131 Q020b6Q 5 PowerMOS transistor Fast Recovery Diode FET BUK637-500A BUK637-500B BUK637-500C GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope.

transistor A 564

Abstract: 100-C BUK637-400B
Contextual Info: N AflER P H I L I P S / D I S C R E T E Philips Semiconductors blE D • bbS3T31 DDBOfibS OHB W A P X - Product Specification PowerMOS transistor BUK637-400B Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode

Contextual Info: PHILIPS INTERNATIONAL bSE D • 711GÖ2b GübM3Gl Sb7 H P H I N Philips Semiconductors Product Specification BUK637-400B PowerMOS transistor Fast recovery diode FET GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope.

Transistor B C 458

Abstract: BUK637-450B G02G
Contextual Info: N AMER P H ILIP S /D IS C R E TE 5SE D • tibSB Tai □D201a7S 1 ■ PowerMOS transistor Fast Recovery Diode FET BUK637-450B T -3 ? -|S " GENERAL DESCRIPTION QUICK REFERENCE OATA N-channel enhancement mode field-effect power transistor in a plastic envelope.

Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor BUK637-500B Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic envelope. REDFET with fast recovery

BUK637-500B

Abstract: diod rj 93 500a fet Diode 500A BUK637-500A BUK637-500C BUK637
Contextual Info: Philips Components BUK637-500A BUK637-500B BUK637-500C PowerMOS transistor Fast Recovery Diode FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancem ent mode lield-effect power transistor in a plastic envelope. F R E D F E T with last recovery reverse diode,

Contextual Info: N AMER PHILIPS/DISCRETE 2SE D • ^53=131 Q020bfl5 4 ■ PowerMOS transistor Fast Recovery Diode FET BUK637-600A BUK637-600B BUK637-600C T ' - 3 cM £ ' _ GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a

BUK637-500B

Contextual Info: PHILIPS INTERNATIONAL fc.SE D B 7110fl2fc, DDfci43Dfci OMR • PHIN Philips Semiconductors Product Specification PowerMOS transistor BUK637-500B Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode

BUK637-500B

Abstract: BUK637-500A BUK637-500C
Contextual Info: N AMER PHILIPS/DISCRETE 55E D • Lb53T31 OQSQbôO S PowerMOS transistor Fast Recovery Diode FET ■ BUK637-500A BUK637-500B BUK637-500C T - 3 *7 -is* GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope.

GS 069 LF

Abstract: HCA-120 BUK637-500A BUK637-500B BUK637-500C
Contextual Info: N AMER P H I L IPS /D IS CR ET E 55E D • Lb53T31 OQSQbôO S ■ PowerMOS transistor Fast Recovery Diode FET BUK637-500A BUK637-500B BUK637-500C T - 3 ‘M S ' GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a

BUK637-600A

Abstract: BUK637-600B BUK637-600C BUK637
Contextual Info: N AMER P H I L I P S / D I S C R E T E SSE D • ^ 5 3 = 1 3 1 OGEabflS 4 PowerMOS transistor Fast Recovery Diode FET BUK637-600A * BUK637-600B BUK637-600C GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a

Contextual Info: N AflER PHILIPS/DISCRETE bTE D • bbSBTai DOBDfibS 0H3 * A P X Philips Semiconductors Product Specification PowerMOS transistor BUK637-400B Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a

BUK637-600A

Abstract: BUK637-600B BUK637-600C
Contextual Info: Philips Components BUK637-600A BUK637-600B BUK637-600C PowerMOS transistor Fast Recovery Diode FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery reverse diode,

Contextual Info: N AMER PHILIPS/DISCRETE 5SE D bbSBTai 0020L.75 1 • PowerMOS transistor Fast Recovery Diode FET BUK637-450B r - 39 - is - GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery

BUK637-500B

Contextual Info: N APIER PH ILIPS/DISCR ETE bRE D • bbSBTBl 00 3 0 fl 7 D Philips Semiconductors *APX Product Specification PowerMOS transistor BUK637-500B Fast recovery diode FET_ _ GENERAL DESCRIPTION N-channel enhancement mode

k 246 transistor fet

Abstract: 4428A BUK637-600A BUK637-600B BUK637-600C SE120 SE-120
Contextual Info: N AMER PHILIPS/DISCRETE SSE D • ^53=131 OGEabflS 4 PowerMOS transistor Fast Recovery Diode FET BUK637-600A * BUK637-600B BUK637-600C GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope.

BUK637-400B

Contextual Info: PHILIPS IN TE RN AT IO NA L bSE ]> • 711DÖSb 0DbM3Gl Philips Semiconductors PowerMOS transistor Fast recovery diode FET GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery reverse diode, particular!/ suitable

transistor A 564

Abstract: 100-P BUK637-400B
Contextual Info: PowerMOS transistor Fast recovery diode FET GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery reverse diode, particularly suitable for motor control applications, eg. in full bridge configurations for which

bf0262a

Abstract: BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94
Contextual Info: Alphanumeric Type Index Typo Page Type Page Type Page Page Type 1N821 1N821A 1N823 1N823A 1N825 11 11 11 11 11 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 13 13 13 13 13 2N2905A 2N2906 2N2906A 2N2907 2N2907A 17 17 17 17 17 2N6599 2N6600 2N6601 2N7000 2N7002 1N825A

Contextual Info: N AMER PHILIPS/DISCRETE E5E D ^ 5 3 1 3 1 Q030b7D S PowerMOS transistor Fast Recovery Diode FET GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery reverse diode, particularly suitable

BUK637-400A

Abstract: BUK637-400B in 4008 diode LP250 00a0B
Contextual Info: N AMER P H I L I P S / D I S C R E T E aSE D ¡3^53^31 □020b7D 2 PowerMOS transistor Fast Recovery Diode FET GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery reverse diode, particularly

BUK637-400A

Abstract: BUK637-400B P02S
Contextual Info: N AMER PHILIPS/DISCRETE E SE D ^53=131 □020b7D 2 PowerMOS transistor Fast Recovery Diode FET GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery reverse diode, particularly suitable