0020L Search Results

Contextual Info: N AMER PHILIPS/DISCRETE 5SE D bbSBTai 0020L.75 1 • PowerMOS transistor Fast Recovery Diode FET BUK637-450B r - 39 - is - GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery

Contextual Info: O K I Semiconductor MSC23832A-XXBS16/DS16 8,388,608-Word x 32-Bit DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The OKI MSC23832A-xxBS16/DS16 is a fully decoded 8,388,608-word x 32-bit CMOS Dynamic Random Access M emory M odule com posed of sixteen 16-Mb DRAMs 4M x 4 in SOJ packages

Contextual Info: TOSHIBA INTELLIGENT GTR MODULE MIG150Q101H PRELIMINARY High Power Switching Applications Motor Control Applications • Integrates Inverter Power Circuits & Control Over-Temperature in One Package. • The Electrodes are Isolated from case. • High Speed Type IGBT:

Contextual Info: ¡Ordering number : EN4673A Thick Film Hybrid 1C STK4034X ISAfÊYOl AF Power Amplifier Split Power Supply (45W min, THD = 0.008%) Features • M iniature package a llo w s audio sets to be made slimmer. • P in -com p atib le am p lifiers w ith outputs o f 30 to

Contextual Info: PM* PRELIMINARY S/UNI-QUAD DATASHEET PMC-971239 PMC-Sierra, Inc. ISSUE 5 „ „ „ „ „ PM5349 S/UNI-QUAD SATURN USER NETWORK INTERFACE 155-QUAD PM5349 S/UNI-QUAD SATURN USER NETWORK INTERFACE (155-QUAD) DATASHEET PRELIMINARY ISSUE 5: JANUARY 1999 PMC-Sierra, inc.

Contextual Info: O K I Semiconductor M SC23B21-XXBS4/DS4 524,288-Word x 36-Bit DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The OKI MSC23B21-xxBS4/DS4 is a fully decoded 524,288-word x 36-bit CMOS Dynamic Random Access Memory Module composed of four 4-Mb DRAMs 256K x 18 in SOJ packages

Contextual Info: I rD : Tiesa I * -O IN P -O IM P •DIM C — OIM C I — 1 K D IM 71081 I P — 1DIN C RECOMMENDED PCB LAYOUT CONNECTOR MOUNTED SIDE <.09I±.0Q2> T Y P .2 PL A C E S - EJE CT O R GROUNDING PAD 2 PL A C E S ANO EJECTO R STANDOFF FOOTPRINT 2 PL A C E S cP □

8 digit lcd

Abstract: C175 2p 6m 8 digit 7 segment lcd display
Contextual Info: UNCONTROLLED DOCUMENT REV, A B LOO [0,039] MAX. k£> in in n REV. LCD-S801A58TR B E.C.N. NUMBER AND REVISION COMMENTS ECN #10619 ECN #1114B. DATE 6 -9 -0 0 4.17.07 95,25 [3 ,7 5 0 ] 88.90 [3.500] V.A. 81,05 113.1911 I. A. DIGIT 1 o PART NUMBER • 1.10 [0,043]

L339

Abstract: 0e33 Q0181 C0224 LCD display 16X2 3v LCM-H01602DSF LCM-H01602DSFF
Contextual Info: UNCO/VrtfOLLFD DOCUMENT PRELIMINARY IN P /N DIR PART NUMBER REV. LCM — H01 6 0 2 D S F /E A REV. E.C.N. NUMBER AND REVISION COMMENTS A E.C.N. #11146. DATE 4 .1 8 .0 7 FTOCEDUREE - 3 3 ,9 0 [E i2 M ] - -4 9 3 3 CL9 3 ] ] - -4 G .2 7 [L B 2 2 1 - G ,6 0 M AX ZU 339]

C175

Abstract: 5 digits tn lcd panel 16 pin lumex 3.5 digits c0060 Z2500 1911013
Contextual Info: UNCONTROLLED DOCUMENT REV. 121.92 [4 .8 0 0 ] A PART NUMBER REV. LCD-H502M70TF-D A E.C.N. NUMBER AND REVISION COMMENTS E.C.N. # 1 1 1 4 6 . DATE 0 2 .0 7 .0 7 116.60 [4 .5 9 1 ] V I E V AREA D E T A IL 'A ' 3.81 [0.15 0: 4 PLS. “ 1 , 91 120 90 c 61 HIIIHHHHRim m HHHW Hm m HHHIiaW Hir

130Q

Contextual Info: UNCONTROLLED DOCUMENT PART NU M BER REV. LLD — IT 1 3 6 2 2 5 0 S S C A REV. E.C.N. NUM BER AND A E.C.N. #11146. PARAMETER POWER SUPPLY VOLTAGE INPUT VOLTAGE LASER SAFETY OUPUT CURRENT 1 2 ,7 DATE 0 1 .2 4 .0 7 SYMBOL MIN. MAX. Vcc a 6 V - GND Vcc V 3D rnA

lcm ref

Abstract: 37 pin TFT display C175 37-B7 pal 003a
Contextual Info: UNCONTROLLED DOCUMENT REV. A 100.00 [3 .9 3 7 : REF, 1,65 [0 ,0 6 5 ] E.C.N. NUMBER AND REVISION COMMENTS DATE E.C.N. # 1 1 1 4 6 . ^ 2 .9 3 4 .2 5 .0 7 C0.509] I 1,95 [0 ,0 7 7 ] ,_ 5 0 ,8 8 [£ .0 0 3 ] _ A C T IV E AREA (°C 4,30 [0 ,1 6 9 ] L

Contextual Info: O K I Semiconductor MSC23232C/C L-xxBS 16/DS16 2,097,152-Word x 32-Bit DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The OKI MSC23232C/CL-xxBS16/DS16 is a fully decoded 2,097,152-word x 32-bit CMOS Dynamic Random Access Memory Module composed of sixteen 4-Mb DRAMs 1M x 4 in SOJ

BUK637-400A

Abstract: BUK637-400B in 4008 diode LP250 00a0B
Contextual Info: N AMER P H I L I P S / D I S C R E T E aSE D ¡3^53^31 □020b7D 2 PowerMOS transistor Fast Recovery Diode FET GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery reverse diode, particularly

Contextual Info: PIC16C7X M ic r o c h ip 8-Bit CMOS Microcontrollers with A/D Converter • Wide operating voltage range: 2.5V to 6.0V D evices included in th is d ata sheet: • PIC16C72 • PIC16C74A • High Sink/Source Current 25/25 mA • PIC16C73 • PIC16C76 • Commercial, Industrial and Extended temperature

T6N 700

Contextual Info: TOSHIBA INTELLIGENT GTR MODULE MIG100J201H PRELIMINARY High Power Switching Applications M otor C ontrol A p plica tion s • Integrates Inverter, Brake Power Circuits & Control Circuits IGBT drive units, Protection units for Over-Current, UnderVoltage & Over-Temperature in One Package.

Contextual Info: CMOS SERIAL-TO-PARALLEL FIFO 2048 x 9 4096 x 9 IDT72132 IDT72142 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 35ns parallel-port access time, 45ns cycle time • 50MHz serial port shift rate • Expandable in depth and width with no external

Contextual Info: N AUER PHILIPS/DISCRETE DOEQbSQ T • E5E D PowerMOS transistor Logic Level FET N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

Contextual Info: H5E D N AUER PHILIPS/DISCRETE • bb53^31 QQHObOS 2 P o w e rM O S tra n s is to r Logic Level F E T G E N E R A L D E S C R IP T IO N N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in

Contextual Info: N AMER PHILIPS/ DISCRE TE DQEObSS b 5SE D PowerMOS transistor Fast Recovery Diode FET BUK627-450B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic full pack envelope. FREDFET with fast recovery

dur 14c 7 segment display

Abstract: MIC-R02 C175
Contextual Info: UNCONTROLLED DOCUMENT REV. 1.10 1.10 CO.04 3 ] J REV. LC D -S 3X 1M 75TF A E.C.N. A lC CO. 0 4 3 ] i PART NUMBER NUMBER AND REVISION COMMENTS DATE E.C.N. # 1 1 1 4 6 . 0 2 .0 7 .0 7 2,8 0 [0.110] MAX. 6 .3 5 C0.E50: L 1.60 C0.063: L 1.10 [0 .0 4 3 ] r 5 6 .3 0 ± 0 .2 0 [2 .2 1 7 ± 0 .0 0 8 ]

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT U PD 42S17405L. 4217405L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, HYPER PAGE MODE EDO Description The //PD42S17405L, 4217405L are 4,194,304 words by 4 bits CMOS dynamic RAMs with optional hyper page mode (EDO).