BU508DF TRANSISTOR Search Results

BU508DF

Contextual Info: NPN BU508DF SILICON DIFFUSED POWER TRANSISTORS The BU508DF is NPN transistors in a fully isolated SOT199 envelope with integrated efficiency diode for the BU508DF . They are a high voltage, high speed switching and they are intended for use in horizontal deflexion

transistor 2SC2271

Abstract: 2SC2271 NP-102 2SC2271 Sanyo BU508DF
Contextual Info: BU508DF Ordering number : ENA0261 Preliminary SANYO Semiconductors DATA SHEET BU508DF NPN Triple Diffused Planar Silicon Transistor Horizontal Deflection Output Applications Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings

BU508DF

Abstract: BU508DF1 BU508AF transistor bu508af UBC023 bu50ba bu508af philips philips bu508af
Contextual Info: Philips Semiconductors Product specification Silicon diffused power transistors BU508AF; BU508DF High-voltage, high-speed switching npn transistors in a fu lly isolated SOT199 envelope w ith integrated efficiency diode fo r the BU508DF , prim arily intended for use in horizontal deflection

bu508df

Contextual Info: N AUER PHILIPS/DISCRETE b=lE D bbS3T31 0D2fl2?D 325 IAPX BU508AF BU508DF SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed switching npn transistors in a fu lly isolated SOT199 envelope w ith integrated efficiency diode fo r the BU508DF , prim arily intended fo r use in horizontal deflection

BU508DF

Contextual Info: BU508DF SILICON DIFFUSED POWER TRANSISTOR GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency,primarily for use in horizontal deflection circuites of colour television receivers QUICK REFERENCE DATA

bu508df

Abstract: IBM REV 2.8 all ic data BU508DF equivalent all ic datasheet in one pdf file curve tracer BU508AD
Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508DF GENERAL DESCRIPTION High voltage, high-speed switching npn transistors in a fully isolated SOT199 envelope with integrated efficiency diode, primarily for use in horizontal deflection circuits of colour television receivers.

bu508df

Abstract: BU508DF equivalent data sheet bu508df
Contextual Info: Inchange Semiconductor Product Specification BU508DF Silicon NPN Power Transistors DESCRIPTION ・With TO-3PFa package ・High voltage,high speed ・With integrated efficiency diode APPLICATIONS ・For use in horizontal deflection circuits of colour TV receivers

BU508DF

Contextual Info: SavantIC Semiconductor Product Specification BU508DF Silicon NPN Power Transistors DESCRIPTION •With TO-3PFa package ·High voltage,high speed ·Built-in damper diode APPLICATIONS ·For use in horizontal deflection circuits of colour TV receivers PINNING

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN POWER TRANSISTORS BU508F, BU508AF, BU508DF TO- 3P Fully Isolated Plastic Package B C E Fast Switching, High Voltage Devices for use in Horizontal Deflection Circuits of Colour TV

bu508af datasheet

Abstract: BU508aF equivalent transistor bu508af equivalent BU508AF BU508DF BU508F
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.3 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN POWER TRANSISTORS BU508F, BU508AF, BU508DF TO- 3P Fully Isolated Plastic Package B C E Fast Switching, High Voltage Devices for use in Horizontal Deflection Circuits of Colour TV

BU508DF

Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508DF GENERAL DESCRIPTION High voltage, high-speed switching npn transistors in a fully isolated SOT199 envelope with integrated efficiency diode, primarily for use in horizontal deflection circuits of colour television receivers.

bu508df

Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508DF GENERAL DESCRIPTION High voltage, high-speed switching npn transistors in a fully isolated SOT199 envelope with integrated efficiency diode, primarily for use in horizontal deflection circuits of colour television receivers.

BU508DF

Contextual Info: Product specification Philips Semiconductors Silicon Diffused Power Transistor BU508DF GENERAL DESCRIPTION High voltage, high-speed switching npn transistors in a fully isolated SOT199 envelope with integrated efficiency diode, primarily for use in horizontal deflection circuits of colour television receivers.

BU508DF

Contextual Info: Product specification Philips Semiconductors Silicon Diffused Power Transistor BU508DF GENERAL DESCRIPTION High voltage, high-speed switching npn transistors in a fully isolated SOT199 envelope with integrated efficiency diode, primarily for use in horizontal deflection circuits of colour television receivers.

BU508AF

Abstract: BU508DF BU508F
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN POWER TRANSISTORS BU508F, BU508AF, BU508DF TO- 3P Fully Isolated Plastic Package B C E Fast Switching, High Voltage Devices for use in Horizontal Deflection Circuits of Colour TV

bu508af datasheet

Abstract: BU508AF BU508DF BU508F
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN POWER TRANSISTORS BU508F, BU508AF, BU508DF TO- 3P Fully Isolated Plastic Package B C E Fast Switching, High Voltage Devices for use in Horizontal Deflection Circuits of Colour TV

bu508df

Abstract: BU 508A transistor BU508AF BU508DF1 bu50bdf BU508D BU508DF TRANSISTOR
Contextual Info: N AMER PHILIPS/D I S C R E T E bHZ t> m bbsa'ni □□20270 32s BU508AF BU508DF SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed sw itching npn transistors in a fu lly isolated S O T Î9 9 envelope w ith integrated e ffic ie n c y d iode fo r the B U 5 0 8 D F , p rim a rily intended fo r use in h o rizo n ta l d e fle ctio n

BU2506DF

Abstract: 1500v 02xs t199 5A 800V BU508
Contextual Info: 42 Power Devices High Speed, High Voltage Transistors in order of current rating (cont.) Package Outline V CE (sat) tf typ at lc lC(DC)<1> V CES V CEO max. at Iq/I b (Inductive Load) BUT12 BUT12A TO-220AB 8A 850V 1000V 400V 450V 1.5V at 6A/1.2A 1.5V at 5A/1 A

BU25150X

Abstract: BU2508-AX BU2708AX BUS08D BUT12AF BU2708DX BU2725DX BU2720DX BU1508AX BU1508DX
Contextual Info: Philips Semiconductors High-voltage and Switching NPN Power Transistors Types added to the range since the last issue of Handbook SC06 1996 issue are shown in bold print. TYPE NUMBER PAGE TYPE NUMBER PAGE TYPE NUMBER PAGE BU505 38 BU2520AW 203 BU2722AX 387

BU2508-AX

Abstract: BU506D, BU1506DX, BU2506DF BU2506DF BU4508AF BU4506DF BU4508DF BU4508DX BU2725DX BU2506DX BU4525AX
Contextual Info: Philips Semiconductors Power Bipolar Transistors Index Types added to the range since the last issue of Handbook SC06 are shown in bold print. TYPE NUMBER PAGE TYPE NUMBER PAGE TYPE NUMBER PAGE BU505 42 BU2520AF 206 BU2722AF 391 BU505D 42 BU2520AW 212 BU2722AX

BUT11AX

Abstract: TO-220AB 220ab BU2506DF BU2506DX sot199 bu508df
Contextual Info: Concise Catalogue 1996 Philips Semiconductors POWER SEMICONDUCTORS High-voltage and switching NPN power transistors HIGH-VOLTAGE AND SWITCHING NPN POWER TRANSISTORS type number package 42 18 40 50 BUX86P BUX84F BUX84 BUW84 SOT82 SOT 186 TO-220AB SOT82 20 32

BST+ekr+1500

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2sd1710

Contextual Info: Products Search Home Products Category About Us Product News Application Message to Us Contact Us You are Here : >Home>Product Showcase > Transistors/IC Products Show Diode Bridge Superfast Diode Ultrafast Diode FRD Diode STD Diode Schottky Diode Transil/TVS

Contextual Info: Products Search Home About Us Product News Application Message to Us Contact Us Corp.News | Industry News Products Category You are Here : >Home>Product Showcase > Transistors/IC Products Show Diode Bridge Superfast Diode Ultrafast Diode FRD Diode STD Diode