BU208A
Abstract: NPN BU208A BU208A 5A
Contextual Info: HORIZONTAL DEFLECTION TRANSISTOR NPN BU208A, 5A 700V Technical Data …designed for use in televisions. F Collector-Emitter Voltage-VCES=1500Vdc F Low Thermal Resistance 1¼C/W increased Reliability F TO-3 Package F Fast Switching -400ns Typical Fall Time
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bu208a1500vdc---400ns10vdc+2npn bu208abu208a 5a
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BU508 TRANSISTOR equivalent
Abstract: BU508 AFI TRANSISTOR equivalent BU208 BU208A equivalent TO3 HEATSINK BU208A
Contextual Info: r rz ^7# SGS-THOMSON BU208/508/508FI Mû^o [i[LiOT «S BU208A/508A/508AFI HORIZONTAL TVC DEFLECTION • ■ ■ ■ ■ ■ ■ HIGH VOLTAGE HIGH POWER HIGH SW ITCHING SPEED GOOD STABILITY CONSUMER POWER SUPPLY TV COLOR HORIZONTAL DEFLECTION D E S C R IP T IO N
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bu208/508/508fibu208a/508a/508afibu208/abu508/a+11bu508fi/afio-218isowatt218o-218/isowatt218bu208/508/508fi-bu208a/508a/508afibu508 transistor equivalentbu508 afi transistor equivalentbu208bu208a equivalentto3 heatsinkbu208a
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BU208
Abstract: BU208A bu208 transistor transistor bu208 BU207
Contextual Info: 1989963 CEN T R A L S E M I C O N D U C T O R 92D 00379 [T2 ai fe ? ¿fe-vi. DE H n fi ^ 1 , 3 DOODgTT 7 s r &arp„ S@issig©Bi£iiiet@r €@pp. ä*" Centrisi T ' 3 3- Q'T BU207 BU208 BU208A NPN SILICON POWER TRANSISTOR S@mg£©if£lP€t@r £@rp. Central
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bu207bu208bu208a600ics+2bu208 transistortransistor bu208
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2sc1943 circuit diagram
Abstract: TIP42C DIAGRAM pin diagram mje13003 TRANSISTOR tip41c schematic diagram BD139 transistor circuit diagram TIP31 NPN Transistor diagram 2N3055 4D 2N3055 TO-218 Package BU108 tip122 tip127 audio amp schematic
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information NPN Silicon Power Darlington High Voltage Autoprotected The BU323Z is a planar, monolithic, high–voltage power Darlington with a built–in active zener clamping circuit. This device is specifically designed for unclamped,
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bu323ztip73btip74tip74a+16tip74btip75tip75atip75btip75c2n64882sc1943 circuit diagramtip42c diagrampin diagram mje13003transistor tip41c schematic diagrambd139 transistor circuit diagramtip31 npn transistor diagram2n3055 4d2n3055 to-218 packagebu108tip122 tip127 audio amp schematic
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mje15033 replacement
Abstract: BD262 DARLINGTON 2SB554 replacement 2sc1079 replacement 2SD323 2N6254 REPLACEMENT BD262A DARLINGTON MJ2955 replacement 2SC1013 replacement 2n3055 replacement
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6576 2N6577 2N6578 NPN Silicon Power Darlington Transistors General–purpose EpiBase power Darlington transistors, suitable for linear and switching applications. • • • • • • Replacement for 2N3055 and Driver
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2n30552n65762n65772n6578+15tip73btip74tip74atip74btip75mje15033 replacementbd262 darlington2sb554 replacement2sc1079 replacement2sd3232n6254 replacementbd262a darlingtonmj2955 replacement2sc1013 replacement2n3055 replacement
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2SC495
Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink
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mjf61072n6107e69369tip73b+16tip74tip74atip74btip75tip75atip75b2sc495nsp41abu108transistor bd614 motorola2sa663bd4122bd661mj1000nsp2100d45vh4 similar
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TIP34C equivalent
Abstract: BU108 TRANSISTOR BC 384 5D2 6 BUV11 equivalent BDX54 2N3025 equivalent BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV11 SWITCHMODE Series NPN Silicon Power Transistor 20 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 150 WATTS . . . designed for high current, high speed, high power applications. • High DC current gain; hFE min. = 20 at IC = 6 A
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buv11tip73btip74tip74a+15tip74btip75tip75atip75btip75c2n6488tip34c equivalentbu108transistor bc 3845d2 6buv11 equivalentbdx542n3025 equivalentbu326bu100
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BU108
Abstract: ir411 transistor BC 247 2N592 MJE2482 2SD675 2SC1419 BU326 BU100 BUV22 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV22 SWITCHMODE Series NPN Silicon Power Transistor 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 250 VOLTS 250 WATTS . . . designed for high current, high speed, high power applications. • High DC current gain: HFE min. = 20 at IC = 10 A
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buv22tip73btip74tip74a+16tip74btip75tip75atip75btip75c2n6488bu108ir411transistor bc 2472n592mje24822sd6752sc1419bu326bu100buv22 equivalent
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MJ3001 equivalent
Abstract: 2N3055 equivalent transistor NUMBER Motorola transistors MJE3055 TO 127 BD907 equivalent transistor equivalent book 2sc2238 Drive IC 2SC3346 TRANSISTOR REPLACEMENT GUIDE mje340 equivalent mje521 equivalent MJE350 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJW16010A* Data Sheet Designer's NPN Silicon Power Transistors *Motorola Preferred Device 1 kV SWITCHMODE Series These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for
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satur32tip73btip74tip74a+16tip74btip75tip75atip75btip75c2n6488mj3001 equivalent2n3055 equivalent transistor numbermotorola transistors mje3055 to 127bd907 equivalenttransistor equivalent book 2sc2238drive ic 2sc3346transistor replacement guidemje340 equivalentmje521 equivalentmje350 equivalent
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2SC1943
Abstract: bd135 TRANSISTOR REPLACEMENT GUIDE motorola transistor cross reference TRANSISTOR 2sb546 transistor 2SA1046 BU108 TRANSISTOR REPLACEMENT GUIDE c 3198 transistor TIP142 TRANSISTOR REPLACEMENT transistor Electronic ballast mje13007
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE18004D2 Data Sheet Designer's High Speed, High Gain Bipolar NPN Power Transistor with POWER TRANSISTORS 5 AMPERES 1000 VOLTS 75 WATTS Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network
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mje18004d2tip73btip74tip74a+15tip74btip75tip75atip75btip75c2sc1943bd135 transistor replacement guidemotorola transistor cross referencetransistor 2sb546transistor 2sa1046bu108transistor replacement guidec 3198 transistortip142 transistor replacementtransistor electronic ballast mje13007
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bd139 equivalent transistor
Abstract: transistor 2SA1046 motorola transistor cross reference transistor equivalent book 2SC2073 transistor 40251 TRANSISTOR REPLACEMENT GUIDE pin configuration transistor bd140 transistor bd610 transistor equivalent book 2sc2238 ST T8 3580
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE16106 Data Sheet Designer's NPN Silicon Power Transistor Switchmode Bridge Series . . . specifically designed for use in half bridge and full bridge off line converters. • • • • • • POWER TRANSISTORS
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mje16106tip73btip74tip74a+16tip74btip75tip75atip75btip75c2n6488bd139 equivalent transistortransistor 2sa1046motorola transistor cross referencetransistor equivalent book 2sc2073transistor 40251transistor replacement guidepin configuration transistor bd140transistor bd610transistor equivalent book 2sc2238st t8 3580
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transistor bd4202
Abstract: motorola AN485 transistor tip120 motorola MJ480 MJE802 MOTOROLA TRANSISTOR REPLACEMENT GUIDE 2SC495 transistor MJE1100 MOTOROLA BUX98A MJE170 motorola
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUL45 * BUL45F* Data Sheet Designer's NPN Silicon Power Transistor High Voltage SWITCHMODE t Series *Motorola Preferred Device POWER TRANSISTOR 5.0 AMPERES 700 VOLTS 35 and 75 WATTS Designed for use in electronic ballast light ballast and in Switchmode Power
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bul45bul45fe69369rating32+15tip73btip74tip74atip74btip75transistor bd4202motorola an485transistor tip120motorola mj480mje802 motorolatransistor replacement guide2sc495 transistormje1100 motorolabux98amje170 motorola
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TRANSISTOR REPLACEMENT GUIDE
Abstract: bd139 equivalent 2SC495 mje13007 equivalent bd139 equivalent transistor 2sd880 equivalent 2N3055 equivalent transistor NUMBER pin configuration NPN transistor tip41c BDX37 equivalent MJE350 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJH16006A Data Sheet Designer's NPN Silicon Power Transistor 1 kV SWITCHMODE Series These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for
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satur32tip73btip74tip74a+16tip74btip75tip75atip75btip75c2n6488transistor replacement guidebd139 equivalent2sc495mje13007 equivalentbd139 equivalent transistor2sd880 equivalent2n3055 equivalent transistor numberpin configuration npn transistor tip41cbdx37 equivalentmje350 equivalent
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pin configuration transistor bd140
Abstract: TRANSISTOR REPLACEMENT GUIDE BU108 Drive IC 2SC3346 Replacement MOTOROLA BDX54 2sA671 transistor BU326 BU100 transistor NSD134
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUL45D2 Data Sheet Designer's High Speed, High Gain Bipolar NPN Power Transistor with POWER TRANSISTORS 5 AMPERES 700 VOLTS 75 WATTS Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network
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bul45d2tip73btip74tip74a+15tip74btip75tip75atip75btip75cpin configuration transistor bd140transistor replacement guidebu108drive ic 2sc3346replacement motorolabdx542sa671 transistorbu326bu100transistor nsd134
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BU108
Abstract: BDX33D equivalent BD130 TO126 TIP-551 2SA627 BU100 2SB554 cross reference 2SC2536 2N3025 Transistor 3202 1 A 60
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10007* Data Sheet Designer's SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode *Motorola Preferred Device 10 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 VOLTS 150 WATTS
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mj10007curr32tip73btip74+16tip74atip74btip75tip75atip75btip75cbu108bdx33d equivalentbd130 to126tip-5512sa627bu1002sb554 cross reference2sc25362n3025transistor 3202 1 a 60
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BD127
Abstract: transistor 2SA1046 2SD630 electronic ballast MJE13005 transistor bd4202 BD388 electronic ballast with MJE13003 motorola AN485 2SC122 transistor Electronic ballast mje13007
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE18206 MJF18206 Data Sheet SWITCHMODE NPN Designer's Bipolar Power Transistor for Electronic Light Ballast and Switching Power Supply Applications POWER TRANSISTORS 8 AMPERES 1200 VOLTS 40 and 100 WATTS The MJE/MJF18206 have an application specific state–of–the–art die dedicated to
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mje/mjf18206mje18206mjf18206pow32+16tip73btip74tip74atip74btip75tip75abd127transistor 2sa10462sd630electronic ballast mje13005transistor bd4202bd388electronic ballast with mje13003motorola an4852sc122transistor electronic ballast mje13007
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2SD436
Abstract: mje15033 replacement BU108 MJE340 MOTOROLA 3140 BD VCC 3802 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE18006 * MJF18006 * Data Sheet SWITCHMODE Designer's *Motorola Preferred Device NPN Bipolar Power Transistor For Switching Power Supply Applications POWER TRANSISTOR 6.0 AMPERES 1000 VOLTS 40 and 100 WATTS The MJE/MJF18006 have an applications specific state–of–the–art die designed
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mje18006mjf18006mje/mjf18006case32+13tip73btip74tip74atip74btip752sd436mje15033 replacementbu108mje340 motorola3140 bdvcc 3802bu326bu100
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bd139 3v
Abstract: transistor bc 647 50W AMP 2SD718 2SB688 BD679 coil 2N6122 transistor TRANSISTOR REPLACEMENT GUIDE TIP41 TRANSISTOR REPLACEMENT 2N5684 circuit diagrams BD138 coil 724 motorola NPN Transistor with heat pad
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE13009* Data Sheet *Motorola Preferred Device Designer's SWITCHMODE Series NPN Silicon Power Transistors The MJE13009 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V
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mje13009sili32tip73btip74+15tip74atip74btip75tip75atip75bbd139 3vtransistor bc 64750w amp 2sd718 2sb688bd679 coil2n6122 transistortransistor replacement guidetip41 transistor replacement2n5684 circuit diagramsbd138 coil724 motorola npn transistor with heat pad
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k 3563
Abstract: 2N6133 equivalent BU108 of ic BD140 2N6407 replacement for TIP147 RCA29 RCA1C03 BUS47AP BD 440 PNP transistors
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Data Sheet SWITCHMODE BUL147* BUL147F* Designer's NPN Bipolar Power Transistor For Switching Power Supply Applications *Motorola Preferred Device POWER TRANSISTOR 8.0 AMPERES 700 VOLTS 45 and 125 WATTS The BUL147/BUL147F have an applications specific state–of–the–art die designed
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bul147/bul147fbul147fcase32tip73b+16tip74tip74atip74btip75tip75atip75bk 35632n6133 equivalentbu108of ic bd1402n6407replacement for tip147rca29rca1c03bus47apbd 440 pnp transistors
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2sc1826 transistor
Abstract: MJE15020 MJE18008 equivalent MJ13010 MJF18008 equivalent 2N6025 MJ2955 replacement BU108 NSP2480 replacement for TIP147
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE18008 * MJF18008 * Data Sheet SWITCHMODE Designer's *Motorola Preferred Device NPN Bipolar Power Transistor For Switching Power Supply Applications POWER TRANSISTOR 8.0 AMPERES 1000 VOLTS 45 and 125 WATTS The MJE/MJF18008 have an applications specific state–of–the–art die designed
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mje18008mjf18008mje/mjf18008case32+15tip73btip74tip74atip74btip752sc1826 transistormje15020mje18008 equivalentmj13010mjf18008 equivalent2n6025mj2955 replacementbu108nsp2480replacement for tip147
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2n3773 b2
Abstract: SDT9207 "cross reference" equivalent bu808 2SC1030 "cross reference" bd139 equivalent MJ3001 equivalent MJE371 equivalent D45H11 equivalent replacement bd433 buv20 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ16018* MJW16018* Data Sheet Designer's NPN Silicon Power Transistors *Motorola Preferred Device 1.5 kV SWITCHMODE Series These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for
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tip73btip74tip74atip74b+16tip75tip75atip75btip75c2n64882n64902n3773 b2sdt9207 "cross referenceequivalent bu8082sc1030 "cross referencebd139 equivalentmj3001 equivalentmje371 equivalentd45h11 equivalent replacementbd433buv20 equivalent
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BD139 time
Abstract: ST BDW83C 2n5298 2SC495 BU108 2 N MJE3055 bd135 TRANSISTOR REPLACEMENT GUIDE 2N6022 transistor MJL21194 2SD382 L
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUH150 Data Sheet Designer's SWITCHMODE NPN Silicon Planar Power Transistor POWER TRANSISTOR 15 AMPERES 700 VOLTS 150 WATTS The BUH150 has an application specific state–of–art die designed for use in 150 Watts Halogen electronic transformers.
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buh150tip73btip74tip74a+15tip74btip75tip75atip75btip75cbd139 timest bdw83c2n52982sc495bu1082 n mje3055bd135 transistor replacement guide2n6022transistor mjl211942sd382 l
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MJ802 EQUIVALENT
Abstract: bd139 equivalent TIP41C EQUIVALENT MJE3055T equivalent mje521 equivalent equivalent buv18a MJL21193 equivalent 2sd880 equivalent mje340 equivalent MJE350 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6836 Data Sheet Switchmode Series Ultra-Fast NPN Silicon Power Transistors Designer's These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for
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2n6836tip73btip74tip74a+16tip74btip75tip75atip75btip75c2n6488mj802 equivalentbd139 equivalenttip41c equivalentmje3055t equivalentmje521 equivalentequivalent buv18amjl21193 equivalent2sd880 equivalentmje340 equivalentmje350 equivalent
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TIP41 TRANSISTOR REPLACEMENT
Abstract: TIP42 338 npn dpak BU326 TIP42 amplifier BU108 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJD41C* PNP MJD42C* Complementary Power Transistors DPAK For Surface Mount Applications *Motorola Preferred Device Designed for general purpose amplifier and low speed switching applications. • • • • • SILICON
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mjd41cmjd42ctip41tip42+13tip73btip74tip74atip74btip75tip75atip41 transistor replacementtip42 338npn dpakbu326tip42 amplifierbu108bu100
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