2SA95 Search Results

2SA958

Abstract: LC07A 2SA957
Contextual Info: AOK AOK Semiconductor Product Specification 2SA957 2SA958 S ilicon PNP Power Transistors DESCRIPTION • With TO-220 package • High breakdown voltage • High power dissipation APPLICATIONS - /• * » i • For general purpose applications PINNING PIN DESCRIPTION

2SA958

Abstract: 2SA957
Contextual Info: SavantIC Semiconductor Product Specification 2SA957 2SA958 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·High breakdown voltage ·High power dissipation APPLICATIONS ·For general purpose applications PINNING PIN DESCRIPTION 1 Emitter 2

2SA950

Abstract: 2SC2120
Contextual Info: TOSHIBA 2SA950 2SA950 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO PO W ER AM PLIFIER APPLICATIONS • • • . 5.1 M AX. High hpE : hRE = 100~320 IW Output Applications Complementary to 2SC2120 0.45 0.55 M A X. 0.45 M A X IM U M RATINGS (Ta = 25°C)

Contextual Info: 2SA950 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA950 Audio Power Amplifier Applications • High hFE: hFE = 100~320 • 1 W output applications • Complementary to 2SC2120 Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating

2SA952

Contextual Info: ST 2SA952 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three group, M, L and K according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

2SA950

Abstract: 2SA950 PNP
Contextual Info: ST 2SA950 PNP Silicon Epitaxial Planar Transistor for audio power amplifier applications. The transistor is subdivided into two group, O and Y according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

2SA954

Abstract: nec transistor 2sa954
Contextual Info: NEC D E S C R IP T IO N PNP SILICON TRANSISTOR 2SA954 The 2SA954 is designed for use in driver stage of high voltage P A C K A G E D IM E N S IO N S audio equipment. in millimeters inches 5.2 MAX. FEATURES • High total power dissipation. P j = 600 mW • High hpE and high voltage.

2SC2120-0

Abstract: 2SA950 2SC2120
Contextual Info: TO SH IBA 2SA950 2SA950 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS • • • . 5.1 MAX. High hpE • hpE = 100~320 IW Output Applications Complementary to 2SC2120 0.45 0.55 MAX. 0.45 MAXIMUM RATINGS (Ta = 25°C)

2SC2120

Abstract: 2SA950 2sC2120 y transistor transistor 2sc2120
Contextual Info: 2SC2120 TO SH IBA 2 S C 2 1 20 TOSHIBA TRANSISTOR SILOCON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS • High hEE : hEE (i) = 100~320 • 1 Watts Amplifier Applications. • Complementary to 2SA950 . 5.1 MAX. 0.45 0.55 MAX.

2SC2120

Abstract: 2SA950
Contextual Info: 2SC2120 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2120 Audio Power Amplifier Applications • High hFE: hFE (1) = 100~320 • 1 watts amplifier applications. • Complementary to 2SA950 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics

fn651

Abstract: CTB-34D 2SC5586 hvr-1x7 STR20012 sap17n 2sd2619 RBV-4156B SLA4037 2sk1343
Contextual Info: <Semiconductor Discontinued and Service Parts> 2010.8.20 Alternative Part No. 2SA744 2SA745 2SA746 2SA747 2SA764 2SA765 2SA768 2SA769 2SA770 2SA771 2SA807 2SA808 2SA878 2SA892 2SA907 2SA908 2SA909 2SA957 2SA958 2SA971 2SA980 2SA981 2SA982 2SA1067 2SA1068 2SA1102

ta8529f

Abstract: TA8528 toshiba mcp
Contextual Info: TOSHIBA TA8529F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT MULTI-CHIP PACKAGE TA8529F Stepping Motor Driver 1C TA8528 + 2SA950 X 4 MCP TA8529F is a stepping motor driver 1C which operates based on bipolar transistors. The device incorporates stepping motor driver 1C TA8528

2SA952

Abstract: IB15-0 2SA952 L
Contextual Info: ST 2SA952 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three group, M, L and K according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

2SA950

Contextual Info: ST 2SA950 PNP Silicon Epitaxial Planar Transistor for audio power amplifier applications. The transistor is subdivided into two group, O and Y according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

2SA958

Abstract: 2SA957
Contextual Info: JMnic Product Specification 2SA957 2SA958 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・High breakdown voltage ・High power dissipation APPLICATIONS ・For general purpose applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to

2SA959

Contextual Info: JMnic Product Specification 2SA959 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Excellent safe operating area APPLICATIONS ・For high power audio ,stepping motor and other linear applications ・Relay or solenoid drviers ・DC-DC converters inverters

2SA950

Contextual Info: ST 2SA950 PNP Silicon Epitaxial Planar Transistor for audio power amplifier applications. The transistor is subdivided into two group, O and Y according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

2SA959

Abstract: "Stepping Motor"
Contextual Info: Inchange Semiconductor Product Specification 2SA959 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·Excellent safe operating area APPLICATIONS ·For high power audio ,stepping motor and other linear applications ·Relay or solenoid drviers

2SA958

Abstract: 2SA957
Contextual Info: Inchange Semiconductor Product Specification 2SA957 2SA958 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·High breakdown voltage ·High power dissipation APPLICATIONS ·For general purpose applications PINNING PIN DESCRIPTION 1 Emitter 2

2SC1815 NPN SOT-23

Abstract: ss8050 sot-23 S8050 npn BC337 2N2907 SOT-23 s9018 to-92 S9014 SOT-23 2SC1008 noise S9014 To39 BC212C
Contextual Info: MCC Small Signal Transistors Small Signal General Purpose Transistors Part No. and Polarity NPN PNP 2N3416 2N3904 2N3906 2N4400 2N4402 2N4401 2N4403 2N5172 2N6727 2SA562 2SA673 2SA673A 2SA733 2SA844 2SA950 2SA1015 2SA1300 2SB892 2SC380TM 2SC945 2SC1008 2SC1213

2SC2120

Abstract: 2SA950
Contextual Info: 2SC2120 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2120 Audio Power Amplifier Applications • High hFE: hFE (1) = 100~320 • 1 watts amplifier applications. • Complementary to 2SA950 Unit: mm Maximum Ratings (Ta = 25°C) Characteristics

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SA950 TRANSISTOR（ PNP ） TO—92 FEATURE Power dissipation PCM : 0.6 W（Tamb=25℃） Collector current ICM : -0.8 A Collector-base voltage V BR CBO : -35 V Operating and storage junction temperature range

transistors 2SA950

Abstract: 2SA950
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SA950 TRANSISTOR PNP TO-92 FEATURE Power dissipation 1. EMITTER PCM : 0.6 W (Tamb=25℃) 2. COLLECTOR Collector current A ICM : -0.8 Collector-base voltage V(BR)CBO : -35 V

2sa958

Contextual Info: 2SA957, 2 S A 9 5 8 ☆ u- > -t — V K *r — X 't'-fi/. • mm) • H * !Ê :fê '(T a = 2 5 -C ) H s 2SA957 12 2SA958 ? 9 ■< - X ï Œ VcBO -1 5 0 V -2 0 0 V 3 V 7 9 ■X ; y ^ m i± VCEO -1 5 0 V -2 0 0 V 3 u -< -X Œ i ' l l ^ — X^ïjit I t f 3