2SD55 Search Results

2SD555

Abstract: 2SB600
Contextual Info: Inchange Semiconductor Product Specification 2SD555 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High power dissipation ·Complement to type 2SB600 APPLICATIONS ·For high speed ,high current ,high power applications PINNING see Fig.2 PIN

2SB600

Abstract: 2SD555
Contextual Info: SavantIC Semiconductor Product Specification 2SB600 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·High power dissipations ·Complement to type 2SD555 APPLICATIONS ·For use in audio and power amplifier applications PINNING see Fig.2 PIN

2SD553

Abstract: 2SB553
Contextual Info: SavantIC Semiconductor Product Specification 2SD553 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·Complement to type 2SB553 ·Low collector saturation voltage APPLICATIONS ·High current switching applications ·Power amplifier applications

2SB552

Abstract: 2SD552
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors 2SB552 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -180V(Min) ·High Power Dissipation: PC= 150W(Max)@TC=25℃ ·Complement to Type 2SD552 APPLICATIONS ·High power amplifier applications.

Contextual Info: TOSHIBA 2SD553 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD553 HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm PO W ER AM PLIFIER APPLICATIONS 1 0 .3 M A X . r • Low Saturation Voltage : V q e sat ~ 0.4V (Max.) (at I q = 4A)

Contextual Info: ~5t TOSHIBA -CDIS CRETE/O PT 01 9097250 TOSHIBA <DIS C R E T E / O P T O 2SD552 DE I^OTTESO 0007755 0 5bC 07725Û y-$5-/3~ _SILICON NPN TRIPLE DIFFUSED TYPE INDUSTRIAL APPLICATIONS Unit HGIH POWER AMPLIFIER APPLICATIONS. in m m . jzfeaoMAX.

2SD553

Abstract: Toshiba 2sd553
Contextual Info: TOSHIBA 2SD553 TO SHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD553 HIGH CURRENT SWITCHING APPLICATIONS PO W ER A M PLIFIER APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 10.3MAX Low Saturation Voltage : V q ^ sat “ 0.4V (Max.) (at Complementary to 2SB553.

412CN

Abstract: 2SD555 MPSU55 R391K lf412cn 1N4148 1N5250B C200 J502 TIP31C
Contextual Info: CIRCUIT TOPOLOGY COVERED BY U.S. PATENT N° 4229706 Qxx ? R36 MPS U55 - 55 V 4.7k R35 100u CR4 10 R33 200p LF 412CN a C12 7- 420 REV.C C13 62 R23 1 100p 2 C10 470 R20 200p C9 NEC 2SD555 TIP 31C Q14 100p Cxxx Q10 4 .1u C11 100 R30 10meg R32 3010 Q9 0.2

2SD555

Abstract: 2SB600 NEC 2SB600 2SD666C 2SD666
Contextual Info: NEC SILICON POWER TRANSISTORS ELECTRON DEVICE 2SB600/2SD555 AUDIO FREQUENCY POWER AMPLIFIER PNP/NPN SILICON TRIPLE DIFFUSED TRANSISTORS D ESC R IPTIO N PACKAGE DIM EN SIO N S in millimeters inches The 2SB600/2SD555 are triple diffused high power transistors designed for use

2SB600

Abstract: 2SD555
Contextual Info: JMnic Product Specification 2SB600 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・High power dissipations ・Complement to type 2SD555 APPLICATIONS ・For use in audio and power amplifier applications PINNING see Fig.2 PIN DESCRIPTION 1

2SB552

Abstract: 2SD552
Contextual Info: JMnic Product Specification 2SB552 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2SD552 APPLICATIONS ・Power amplifier applications ・Power switching applications ・DC-DC converters PINNING see Fig.2 PIN DESCRIPTION

2SB600

Abstract: 2SD555
Contextual Info: Inchange Semiconductor Product Specification 2SB600 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・High power dissipations ・Complement to type 2SD555 APPLICATIONS ・For use in audio and power amplifier applications PINNING see Fig.2

2SD555

Abstract: 2SB600 300W TRANSISTOR AUDIO AMPLIFIER 200V transistor npn 10a 300 watts audio amplifier
Contextual Info: r 2SD555/2SB600 2 8 0 5 5 5 /2SB600 v & i / 'J 3 V I* 7 V * * * / N PN /PN P N P N /P N P SILICON TRIPLE DIFFUSED MESA TRANSISTOR Frequency Power Amplifier ft »/F E A T U R E S • Mfflttifi 200~300W Hi-Fi 7 v 7'iOtB^/M zi v y ' t v 9 ') \ v y 7* ? X *i> Z o

NEC 1357

Abstract: SD 1351 2SD1370 2SD869 TOSHIBA NEC 2SD288 2sc4329 D1351 2SD1944 2SC3252 k 1358
Contextual Info: - 238 - m % tt Type No. £ Manuf. H # SANYO It 2Ê TOSHIBA 2SD869 = ft ft 2SD1887 ^ 2SD1884 2SD820 2 S D 1342 = ft 2SD870 H ft 2SD1878 2SD 1343 ✓ 2SD1885 2SD821 2SD 1344 H ft 2SD18B5 2SD871 2SD1061 2SD553 2 S D 1340 2 S D 1341 = 2SD 1345 # 2 S D 134/ = ft

2SD557

Contextual Info: MCC
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# 2SD557 Features • • With TO-3 package High power audio amplifier applications NPN Silicon Power Transistors Maximum Ratings Symbol V CEO

2SB600

Abstract: 2SD555 200w audio amplifier ic 200w audio power amplifier 200W POWER TRANSISTORS
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors 2SB600 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -200V(Min) ·High Power Dissipation: PC= 200W(Max)@TC=25℃ ·Complement to Type 2SD555 APPLICATIONS ·Audio frequency power amplifier applications.

2SB553

Abstract: 2SD553
Contextual Info: SavantIC Semiconductor Product Specification 2SB553 Silicon PNP Power Transistors DESCRIPTION •With TO-220C package ·Complement to type 2SD553 ·Low collector saturation voltage APPLICATIONS ·High current switching applications ·Power amplifier applications

2SD553

Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SD553 INDUSTRIAL APPLICATIONS _ Unit In HIGH CURRENT SWITCHING APPLICATIONS. 00.3MAX. POWER AMPLIFIER APPLICATIONS. 0 1 6 = 0 .2 ✓- FEATURES: • Low Saturation Voltage : vCE sat =°-4V (Max.) (at IC=4A)

2SD551

Abstract: 2SB681 2SD551 equivalent
Contextual Info: Inchange Semiconductor Product Specification 2SD551 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Complement to type 2SB681 ·Wide area of safe operation APPLICATIONS ·For audio frequency power amplifier applications PINNING see Fig.2 PIN

2SD552

Abstract: 2SB552
Contextual Info: Product Specification www.jmnic.com 2SD552 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2SB552 APPLICATIONS ・Power amplifier applications ・Power switching applications ・DC-DC converters PINNING see Fig.2 PIN DESCRIPTION

2SB553

Abstract: 2SD553 AC75
Contextual Info: T O S H IB A 2SD553 2SD553 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE INDUSTRIAL APPLICATIONS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS PO W ER AM PLIFIER APPLICATIONS 10.3MAX. • • Low Saturation Voltage : V q e sa t “ 0.4V (Max.) (at Iq = 4A)

2SB553

Abstract: 2SD553
Contextual Info: JMnic Product Specification 2SB553 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SD553 ・Low collector saturation voltage APPLICATIONS ・High current switching applications ・Power amplifier applications PINNING

2SD636 R

Abstract: 2SD636 2SB615 2SD650H 2SB613 2SD511 2SD646 2SD637 2SB631 2SD601
Contextual Info: - 220 - Ta=25tC, *EP(àîc=25tC M & 2SD526 t± & ÄS 2SD545 m V'cEO Ic(D C ) Pc Pc* (V) (V) (A) (W) (W) 80 80 4 LF PA 25 25 1 220 180 15 70 50 7 Ä 2 PA/PSW/DDC/Reg 2SD553 Ä S PSW/PA m VCBO PA 2SD552 2SD560 m ICEO (max) (/¿A) 30 0. 6 n k 4$ 14 hF E Vc b

WE VQE 11 E

Abstract: WE VQE 24 E 2SB553 2SD553 AC75
Contextual Info: TO SH IBA 2SD553 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD553 INDUSTRIAL APPLICATIONS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS POWER AMPLIFIER APPLICATIONS 53.6 ±0.2 • • Low Saturation Voltage : Vq^ Complementary to 2SB553. s a t