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    BU205 EQUIVALENT Search Results

    BU205 EQUIVALENT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMP89FM42UG
    Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP44-P-1010-0.80B Datasheet
    TMP89FM42LUG
    Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP44-P-1010-0.80B Datasheet
    TMP89FS28LFG
    Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP176-P-2020-0.40D Datasheet
    TMP89FS62BUG
    Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP44-1010-0.80-003 Datasheet
    TMP89FM42KUG
    Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP44-P-1010-0.80B Datasheet

    BU205 EQUIVALENT Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BU206

    Abstract: BU205
    Contextual Info: Dlf|b3b7S54 □□flObbO T [ATOROLA SC iXSTRS/R F36 3 6 7 2 5 4 , MOTOROLA SC XSTRS/R F 96D 80660 D T - 3 S - MOTOROLA If BU204 BU205 SEMICONDUCTOR TECHNICAL DATA ; ÄiSül ) ( ».*•>i g i i <»i •.*-» *1 > í » t á : i 8 l H H ' t , 2JS AM PERE NPN SILICON


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    b3b7s54bu204bu205--bu204+2--bu205bu206 PDF

    BU206

    Abstract: BU205 BU205 equivalent BU204 LC2D
    Contextual Info: NOT OROL A SC 6 3 6 7 2 54 ÍXSTRS/R MOTOROLA SC D Ëf|b3b7S54 F3- XSTRS/R F 96D 80660 □□flObbO D T - 3 3 - II MOTOROLA BU204 BU205 SEM ICONDUCTOR TECHNICAL DATA ivfil )t ‘s i " i l c»i •‘-¡ I ) ;K a 2S AMPERE NPN SILICON POWER TRANSISTO RS H O R IZO N TA L D EFLECTIO N TRANSISTO R


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    b3b7s54bu204bu205b367254+5r-33-//14-maximumbu206bu205 equivalentlc2d PDF

    sx3704

    Abstract: BRC157 BRC-116 Germanium Diode aa143 1n4148 ITT TRANSISTOR BC147 BC107/spice model bf199 BY238 SN76226DN tungsram
    Contextual Info: rh is Booklet • • • ue to fluctuations in availability, some types of semiconductors used in Thorn products have >f necessity changed from those originally specified and quoted in service literature. This )lus the fact that some service replacements are


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    ircd376bd234vt854vt855+14itt44bzx79-c24bzx83-c24bzx88-c24sx3704brc157brc-116germanium diode aa1431n4148 itttransistor bc147bc107/spice model bf199by238sn76226dntungsram PDF

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


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    an-784ala 4440 amplifier circuit diagram 300 wattla 4440 amplifier circuit diagram 300 wattdiode lt 7229+72sd323ym 7137 3dda 3807 pdf transistorinverter welder 4 schematic2n5630thyristor br 4031n3492 PDF

    transistor 2N3906 smd 2A SOT23

    Abstract: BC327-40 SMD pin configuration transistor BC547 smd packaging DIAC DB2 BC547 smd packaging bd469 W04M pin configuration A1941 C5198 application notes D1 DB2 Diac w33 SMD sot 23
    Contextual Info: Contents Chips/Dice Package Outline Drawings Page # Axial Glass/Plastic Packages Package Outline Drawings Page # … Leaded Plastic Packages Chips/Dice for Diodes 2 DO-35 50 KBPC 60 Chips/Dice for Transistors 2 DO-41 50 KBPC-6 60 Products for CFL/TL Ballasts


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    do-35do-41do-15do-201ad+14do-41p200mwod-80cll-34transistor 2n3906 smd 2a sot23bc327-40 smdpin configuration transistor bc547 smd packagingdiac db2bc547 smd packagingbd469w04m pin configurationa1941 c5198 application notesd1 db2 diacw33 smd sot 23 PDF

    pin configuration transistor BC547 smd packaging

    Abstract: BC547 smd packaging BD469 C2N3904 c5198 CMJE2955T transistor mcr100-8 BC337 TO-92 Generic DIAC DB2 BC337 hie hre hfe
    Contextual Info: Quick Reference Data Chip/Dice – Diffused Silicon Wafers Surface Mount Devices Leaded Semiconductor Devices Electronic Manufacturing Services Switching Diodes & Arrays Schottky Barrier Diodes Zener Diodes Rectifiers Small Signal Transistors Medium Power Transistors


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    do-35do-41c-1200406-3k+10pin configuration transistor bc547 smd packagingbc547 smd packagingbd469c2n3904c5198cmje2955ttransistor mcr100-8bc337 to-92 genericdiac db2bc337 hie hre hfe PDF

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


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    sx3704ap239transistor 801398c547+66c131cin2222a2n50b2n2064radio ac176 ac126sft353 PDF

    BU108

    Abstract: 62-3-1-2 2N555 MJ4361 2SC889 MJ1000 MJ3237 BDW94 bd95 DTS801
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5877 2N5878 Complementary Silicon High-Power Transistors . . . designed for general–purpose power amplifier and switching applications. 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 – 80 VOLTS 150 WATTS


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    2n58772n5878tip73btip74+16tip74atip74btip75tip75atip75btip75cbu10862-3-1-22n555mj43612sc889mj1000mj3237bdw94bd95dts801 PDF

    BU108

    Abstract: 2SC194 transistor Bc 574 2SC1419 BU326 BU100
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV20 SWITCHMODE Series NPN Silicon Power Transistor 50 AMPERES NPN SILICON POWER METAL TRANSISTOR 125 VOLTS 250 WATTS . . . designed for high speed, high current, high power applications. • High DC current gain: hFE min = 20 at IC = 25 A


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    buv20tip73btip74tip74a+12tip74btip75tip75atip75btip75c2n6488bu1082sc194transistor bc 5742sc1419bu326bu100 PDF

    transistor 3569

    Abstract: t4 3570 dpak BU 508 transistor BU108 BDW93C ST T4 3580 transistor t4 3570 BU326 BU100 MJ*15033
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJD200 PNP MJD210 Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface Mount Applications . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage —


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    bandwi32tip73btip74tip74a+16tip74btip75tip75atip75btip75c2n6488transistor 3569t4 3570 dpakbu 508 transistorbu108bdw93cst t4 3580transistor t4 3570bu326bu100mj*15033 PDF

    transistor MJ2501

    Abstract: BU108 transistor 2sC2238 transistor sdt9201 BDX54 transistor 2SD425 BU326 BU100
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ413 MJ423 High-Voltage NPN Silicon Transistors 10 AMPERE POWER TRANSISTORS NPN SILICON 400 VOLTS 125 WATTS . . . designed for medium–to–high voltage inverters, converters, regulators and switching circuits. • High Voltage — VCEX = 400 Vdc


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    mj413mj423tip73btip74+14tip74atip74btip75tip75atip75btip75ctransistor mj2501bu108transistor 2sc2238transistor sdt9201bdx54transistor 2sd425bu326bu100 PDF

    automotive ignition tip162

    Abstract: bc337 cross-reference BU108 BD390 cross reference replacement transistor BC337 BUX48A 2SD1815 "cross reference" TIP102 Darlington transistor Motorola MJ15022 MJ1000
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU323AP NPN Silicon Darlington Power Transistor The BU323AP is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications. • Collector–Emitter Sustaining Voltage —


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    bu323aptip73btip74tip74a+15tip74btip75tip75atip75btip75cautomotive ignition tip162bc337 cross-referencebu108bd390 cross referencereplacement transistor bc337bux48a2sd1815 "cross referencetip102 darlington transistormotorola mj15022mj1000 PDF

    BU108

    Abstract: TRANSISTOR REPLACEMENT GUIDE BD676 BD676A application note BU326 BU100
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD676 BD676A BD678 BD678A BD680 BD680A BD682 Plastic Medium-Power Silicon PNP Darlingtons . . . for use as output devices in complementary general–purpose amplifier applications. • High DC Current Gain — hFE = 750 Min @ IC = 1.5 and 2.0 Adc


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    bd676bd675bd676abd678+10bd678abd680bd680abd682tip73bbu108transistor replacement guide bd676bd676a application notebu326bu100 PDF

    2SC1419

    Abstract: TIP54 MJ1000 MJ15024 MJ15025 2SC1943 SE9302 MJE2482 2SD675 BU326 BU108
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE350 Plastic Medium Power PNP Silicon Transistor 0.5 AMPERE POWER TRANSISTOR PNP SILICON 300 VOLTS 20 WATTS . . . designed for use in line–operated applications such as low power, line–operated series pass and switching regulators requiring PNP capability.


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    mje350tip73btip74tip74a+16tip74btip75tip75atip75btip75c2n64882sc1419tip54mj1000mj15024 mj150252sc1943se9302mje24822sd675bu326bu108 PDF

    2SA1046

    Abstract: BD419 2SC1943 BD4202 BD420 2SC2071 2SC1237 2SA939 BD133 2sc1903
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD438 BD440 BD442 Plastic Medium Power Silicon PNP Transistor . . . for amplifier and switching applications. Complementary types are BD437 and BD441. 4.0 AMPERES POWER TRANSISTORS PNP SILICON ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ


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    bd437bd441bd438bd440+16bd442tip73btip74tip74atip74btip752sa1046bd4192sc1943bd4202bd4202sc20712sc12372sa939bd1332sc1903 PDF

    2SC124

    Abstract: 2n5195 motorola BU108 bd238 equivalent 2SA1046 tip3055 equivalent BU806 Complement BU326 BU100
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5194 2N5195* Silicon PNP Power Transistors *Motorola Preferred Device . . . for use in power amplifier and switching circuits, — excellent safe area limits. Complement to NPN 2N5191, 2N5192 4 AMPERE POWER TRANSISTORS


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    2n51912n51922n51942n5195+15tip73btip74tip74atip74btip75tip75a2sc1242n5195 motorolabu108bd238 equivalent2sa1046tip3055 equivalentbu806 complementbu326bu100 PDF

    electronic ballast with MJE13003

    Abstract: BU108 application notes MJE13005 NPN POWER DARLINGTON TRANSISTORS high voltage high ICM TO-247 mje13003 ballast MJE2482 2SD675 2SC1419 BU326 BU100
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUD43B Product Preview SWITCHMODE NPN Silicon Planar Power Transistor POWER TRANSISTORS 2 AMPERES 700 VOLTS 25 WATTS The BUD43B has an application specific state–of–the–art die designed for use in 220 V line operated Switchmode Power supplies and electronic ballast “light


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    bud43btip73btip74tip74a+15tip74btip75tip75atip75btip75celectronic ballast with mje13003bu108application notes mje13005npn power darlington transistors high voltage high icm to-247mje13003 ballastmje24822sd6752sc1419bu326bu100 PDF

    2N5037

    Abstract: 2SC1903 2SC2159 mje15033 replacement bd7782 MJE2050 SDT7605 2SA835 BD279 svt6251
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD808 BD810* Plastic High Power Silicon PNP Transistor *Motorola Preferred Device 10 AMPERE POWER TRANSISTORS PNP SILICON 60, 80 VOLTS 90 WATTS . . . designed for use in high power audio amplifiers utilizing complementary or quasi


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    bd808bd810tip73btip74+16tip74atip74btip75tip75atip75btip75c2n50372sc19032sc2159mje15033 replacementbd7782mje2050sdt76052sa835bd279svt6251 PDF

    c 3421 transistor

    Abstract: BU108 transistor equivalent of BU406 equivalent transistor 2n3055 bu126 motorola 2SD165 bc 574 transistor D 1163 A BU208A 2N4906 MOTOROLA
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Horizontal Deflection Transistor . . . designed for use in televisions. • • • • Collector–Emitter Voltages VCES 1500 Volts Fast Switching — 400 ns Typical Fall Time Low Thermal Resistance 1_C/W Increased Reliability


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    bu208atip73btip74tip74a+15tip74btip75tip75atip75btip75c2n6488c 3421 transistorbu108transistor equivalent of bu406equivalent transistor 2n3055bu126 motorola2sd165bc 574 transistord 1163 a2n4906 motorola PDF

    MJ15003 300 watts amplifier

    Abstract: ST T4 3580 MJD340 ST mje34 2sd478 D45H8 EQUIVALENT BUX98A SE9302 MJE2482 2SC1419
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN High Voltage Power Transistors MJD340* PNP MJD350* Designed for line operated audio output amplifier, switchmode power supply drivers and other switching applications. *Motorola Preferred Device DPAK For Surface Mount Applications


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    mje340mje350mjd340mjd350+16tip73btip74tip74atip74btip75tip75amj15003 300 watts amplifierst t4 3580mjd340 stmje342sd478d45h8 equivalentbux98ase9302mje24822sc1419 PDF

    TIP35C transistor replacement

    Abstract: TIP35C replacement 2N3055 equivalent BU108 D45H11 equivalent replacement BDX54 2n3772 EQUIVALENT BU326 BU100
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN TIP35A TIP35B* TIP35C* PNP TIP36A TIP36B* TIP36C* Complementary Silicon High-Power Transistors . . . for general–purpose power amplifier and switching applications. • • • • 25 A Collector Current Low Leakage Current — ICEO = 1.0 mA @ 30 and 60 V


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    tip73btip74tip74atip74b+15tip75tip75atip75btip75c2n64882n6490tip35c transistor replacementtip35c replacement2n3055 equivalentbu108d45h11 equivalent replacementbdx542n3772 equivalentbu326bu100 PDF

    D72F5T2 NPN

    Abstract: silicon npn 2SD716 transistor BD4202 bd139 3v BU108 2N5978 NPN pin configuration NPN transistor tip41c 724 motorola NPN Transistor with heat pad MJE15029 audio output TRANSISTOR PNP 2SB686
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJE15028* MJE15030* PNP MJE15029* MJE15031* Complementary Silicon Plastic Power Transistors . . . designed for use as high–frequency drivers in audio amplifiers. • DC Current Gain Specified to 4.0 Amperes hFE = 40 Min @ IC = 3.0 Adc


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    mje15028mje15029mje15030mje15031+11220abtip73bd72f5t2 npnsilicon npn 2sd716 transistorbd4202bd139 3vbu1082n5978 npnpin configuration npn transistor tip41c724 motorola npn transistor with heat padaudio output transistor pnp 2sb686 PDF

    BU108

    Abstract: D45C electronic ballast with MJE13003 NPN POWER DARLINGTON TRANSISTORS high voltage high ICM TO-247 BDX54 BU326 BU100
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUL43B Product Preview SWITCHMODE NPN Silicon Planar Power Transistor POWER TRANSISTORS 2 AMPERES 700 VOLTS 40 WATTS The BUL43B has an application specific state–of–the–art die designed for use in 220 V line operated Switchmode Power supplies and electronic ballast “light


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    bul43btip73btip74tip74a+12tip74btip75tip75atip75btip75cbu108d45celectronic ballast with mje13003npn power darlington transistors high voltage high icm to-247bdx54bu326bu100 PDF

    TIP36

    Abstract: BD413 2SC331 BD139.6 BD139.10 BDW59 2sc2159 BD139.16 BD419 2SD364
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ410 High Voltage NPN Silicon Transistors 5 AMPERE POWER TRANSISTOR NPN SILICON 200 VOLTS 100 WATTS . . . designed for medium to high voltage inverters, converters, regulators and switching circuits. • High Collector–Emitter Voltage —


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    mj410tip73btip74tip74a+16tip74btip75tip75atip75btip75c2n6488tip36bd4132sc331bd139.6bd139.10bdw592sc2159bd139.16bd4192sd364 PDF