BU 326 GA Search Results

transistor tt 2206

Abstract: TT 2206 transistor transistor BU 102 t 326 Transistor transistor npn 326 BU326 W2206 326 Transistor
Contextual Info: ESC D Ml fl2 3 5 bOS G 0 G M Ô 4 M *] H S 1 E G , NPN Silicon Power Transistor BU 326 A - SIEMENS AKT IENÛ ES ELLS CH AF BU 326 A is a triple diffused silicon NPN power switching transistor in TO 3 case 3 B 2 DIN 41872 . It is outstanding for short switching times and high dielectric strength and is

BU326

Abstract: Itron 326A BU326A BU 2578 SOLITRON DEVICES
Contextual Info: 8368602 SOL ITRON DEV ICES_I NC.jTl DE |fl3bfltiDa DD 01415 fi TÌà. Solitron D E V I C E S , INC. BU 326 BU 326A KPU SILICON POWER TRANSISTORS 6 AMPERES FEATURES: HIGH VOLTAGE FAST SWITCHING APPLIC A TIO N S SWITCHING MODE POWER SUPPLIES; CAN BE USED IN HORIZONTAL OUTPUT STAGE

t 326 Transistor

Abstract: 326 Transistor BU 103 A transistor J 326 transistor BU 104 BU326 Q62702-U268 npn transistor w5
Contextual Info: E5C D Ml fl235bOS G0GMÔ4M 'i H S 1 E G , NPN Silicon Power Transistor BU 326 A -SIEMENS AKTIENÛESELLSCHAF BU 3 2 6 A is a triple diffused silicon N PN power switching transistor in TO 3 case 3 B 2 DIN 4 18 7 2 . It is outstanding for short switching times and high dielectric strength and is

IR 92 0151

Abstract: transistor BU 109 bu326 t 326 Transistor transistor BU 184
Contextual Info: MO TO RO LA SC XSTRS/R F 12E D | b3b?2S4 QGâMflQâ 2 | MOTOROLA SEMICONDUCTOR TECHNICAL DATA 6 AM PERES HIGH VO LTAGE NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS . . . Designed far use in the switch-mode power supplies of colour television receivers.

474F3

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules IFS75B12N3E4_B31 MIPAQ base Modul mit Trench/Feldstopp IGBT4, Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with trench/fieldstop IGBT4, emitter controlled 4 diode and current sense shunt

Pt100 JUMO 95.6530

Abstract: CAPTEUR PT100 converter analogique numerique Avanta PT100 capteur -20 a 50 5A30V PT100 temperature sensor JUMO sonde pt100 jumo TTL RS232 converter cable pt100 TRANSFER FUNCTION
Contextual Info: M. K. JUCHHEIM GmbH & Co Hausadresse: Lieferadresse: Postadresse: Moltkestraße 13 - 31, 36039 Fulda, Germany Mackenrodtstraße 14, 36039 Fulda, Germany 36035 Fulda, Germany Telefon: Telefax: E-Mail: Internet: 0661 6003-725 0661 6003-681 mail@jumo.net www.jumo.net

Contextual Info: 1-phase Filters FN 2030 General Purpose EMI Filter with High Attenuation Performance n n n n n n Rated currents from 1 to 30A High performance filter attenuation High differential-mode attenuation Optional medical versions B type Optional safety versions (A type)

Contextual Info: EMC/EMI Products 1-phase Filters FN 2030 General Purpose EMI Filter with High Attenuation Performance • ■ ■ ■ ■ ■ Rated currents from 1 to 30A High performance filter attenuation High differential-mode attenuation Optional medical versions B type

Contextual Info: 1 EMC/EMI Products 1-phase Filters FN 2030 General Purpose EMI Filter with High Attenuation Performance • ■ ■ ■ ■ ■ Rated currents from 1 to 30A High performance filter attenuation High differential-mode attenuation Optional medical versions B type

transistor BU 5027

Abstract: transistor KT 816 transistor SD 5024 J 5027-R bu 5027 KT 817 transistor KT315 Transistor KU 607 MDA 2020 RFT e 355 d
Contextual Info: SERVICE-MITTEILUNGEN VEB IN D U ST RIEV ERT RIEB R U N D FU N K UND FE R N SE H EN NOV/DEZ B l Iradi o -teievlsion I 1 9 IO 8 0 SEITE 1-8 Mitteilung aus dem VEB RFT Industrievertrieb R.u.F. Leipzig / S Änderung am Kassettenrecorder ELKKTRONTKA - 302 Der Sowjet. Hersteller hat im

LifYY11Y

Contextual Info: CONNECTORS | CONNETTORI version 110125 M12, coding A, with cable, angled M12, codifica A, con cavo, angolato IEC61076-2-101 round connector; from 2 to 12 poles; male or female; with anti-vibration system; wide cable choice; single head or extension cable;

Contextual Info: CONNECTORS | CONNETTORI version 110125 M12, coding A, with cable, straight M12, codifica A, con cavo, diritto IEC61076-2-101 round connector; from 2 to 12 poles; male or female; with anti-vibration system; wide cable choice; single head or extension cable;

cables

Abstract: IEC 228, classe 6
Contextual Info: page | pagina SECTION 30 Declaration of conformity Company profile Production range 30-2 30-3 30-4 SEZIONE 30 Dichiarazione di conformità Profilo aziendale Gamma produzione SECTION 31 Advice in choosing a cable 31-2 SEZIONE 31 Suggerimenti per scegliere un cavo

connectors

Abstract: LifYY-11Y
Contextual Info: CONNECTORS | CONNETTORI version 110125 M12 – coding A or 1/2” UNF – coding C, field attachable, straight M12 – codifica A o 1/2” UNF – codifica C, da cablare, diritto IEC 61076-2-101 round connector; from 4 to 12 poles; male or female; application with sensors

Transistoren DDR

Abstract: vergleichsliste TELEFUNKEN bux 127 aktive elektronische bauelemente ddr BUX 127 SF 127 vergleichsliste DDR "vergleichsliste" bauelemente DDR sf 369
Contextual Info: VT FUNKAMATEUR-Bauelementeinformation Vergleichsliste für Transistoren DDR/international DDR-Typ Vergleichstyp Beschreibung Hinweise SC 237/238/239 SC 307/308/309 SCE 237 SD 335/337/339 BC 237/238/239 BC 307/308/309 BC 847 BCW 71/72 BCX 70 BC 848 BCW 31/32/33/60

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules FS200R06KE3 EconoPACK 3 mit schnellem Trench/Feldstop IGBT³ und EmCon3 Diode EconoPACK™3 with fast trench/fieldstop IGBT³ and EmCon3 diode Vorläufige Daten / preliminary data IGBT-Wechselrichter / IGBT-inverter

transistor kt 326

Abstract: transistor KT 3107 Belcanto ST 3010 transistor BU 5027 J 5027-R atakassette SANYO CTP 4360 transistor kt 925 Transstereo 2401.00 transistor KT 816
Contextual Info: SERVICE-MITTEILUNGEN V E B IN D U S T R IE V E R T R IE B R U N D F U N K U N O F E R N S E H E N ir .f -t j | R A P io -teievlslon JUNI/JULI 1960 6/7 SKITB 1-8 Mitteilung aus dem VEB Fernsehgerätewerke Staßfurt Informationen für den Fernsehgeräteservice

LTC4098-3.6

Abstract: 6N16 l436 SXA-01GW-P0.6
Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules IFS75B12N3T4_B31 MIPAQ base Modul mit Trench/Feldstopp IGBT4, Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with trench/fieldstop IGBT4, emitter controlled 4 diode and current sense shunt

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules FS100R06KE3 EconoPACK 3 mit schnellem Trench/Feldstop IGBT³ und EmCon3 Diode EconoPACK™3 with fast trench/fieldstop IGBT³ and EmCon3 diode Vorläufige Daten / preliminary data IGBT-Wechselrichter / IGBT-inverter

Contextual Info: CONNECTORS - Special Series | CONNETTORI - Serie Speciali version 110125 M12 or 1/2”, dual key, coding C, with cable, straight M12 o 1/2”, doppia chiave, codifica C, con cavo, diritto IEC61076-2-101 round connector; from 3 to 6 poles; male or female; with M12x1 or 1/2”-20 UN threaded nut;

Contextual Info: PRELIMINARY : m o s MASK ROM KM23C32000 32M-BH 2M x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C32000 Is a fu lly s tatic mask programmable ROM organized 2,097,152 x 16 bit. It is fabricated using s ilic o n gate CMOS process technolgy.

buv98a

Abstract: buv98
Contextual Info: PHILIPS INTERNATIONAL M5E » Bi 711002b 0031127 G E3PHIN BU V98 V BUV98A(V) T-33-13 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-current, high-speed transistors, assembled in the isolated ISOTOP package; intended fo r use in inverters, converters and m otor control applications on 220 V to 380 V mains supplies.

Contextual Info: / P R E LIM IN A R Y >/ KM23C32000 : m o s MASK ROM 32M-BH 2M x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 2,097,152 x 16 bit organization The KM23C32000 is a fully static mask programmable ROM organized 2,097,152 x 16 bit It is fabricated using s ilic o n gate CMOS process te ch n o lg y

A1306 TRANSISTOR

Abstract: t a1306 A1306A A3206A A1316-A3 A1318 A1309 a1328 A1013 A1300 transistor
Contextual Info: IEMENS AKTIENGESELLSCHAF 03E J> • -fZ 3 ? - û l ÔB3SbQS DOlSfciBR û BISIEG Leistungstransistoren Power Transistors N-Kanal Anreicherungstypen im Kunststoffgehäuse T0-220 AB N channel enhancement types in plastic package T0-220 AB Typ Type ^DS max fc(max)