transistor d 1933
Abstract: transistor marking code p2T PMST4403 VC80 marking code P2T
Contextual Info: Hi Philips Semiconductors N bbSBTBl AHER 0 0 2 5 T 47 b 47 HIAPX PH ILIPS/D ISCR ETE b?E Product specification J> PNP switching transistor FEATURES PMST4403 PIN CONFIGURATION • S-mini package » High collector current. DESCRIPTION PNP silicon planar epitaxial
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0025t47pmst4403ot323mam096+4transistor d 1933transistor marking code p2tvc80marking code p2t
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SCN68000C8N64
Abstract: CZ 5.0VDC SCN68000C6A68 DAN-101 SCN68000 S68000 ls- 11m scn680 scn68020 SCN68000C8I64
Contextual Info: 2TE D NAPC/ SIGNETICS • b b S 3 T 24 005405=1 T ■ T-V9-V7-/V SCN68000 Signetics 16-/32-Bit Microprocessor Product Specification Microprocessor Products DESCRIPTION PIN CONFIGURATION The SCN68000 is the first implementa tion of the S68000 1 6 /3 2 bit micropro
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scn6800016-/32-bits6800016-bit+1124-bit32-bitscn68008scn68000c8n64cz 5.0vdcscn68000c6a68dan-101ls- 11mscn680scn68020scn68000c8i64
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TB531
Abstract: m1573 BYW92 BYW92-50
Contextual Info: N AMER P H IL IP S /D IS C R E T E 5SE D • ^53= 131 0U 2577S II MAINTENANCE TYPE y 4 ■ BYW92 SERIES y r - o s - i^ ULTRA FAST RECOVERY RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in DO-5 metal envelopes, featuring low
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002577sabyw92byw92m1246+7bti53ct-03-19m1578bbs3131tb531m1573byw92-50
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bfr93
Abstract: DBFR93 T-989 BFR91 BFT93 sot-23 marking jn T-31-17
Contextual Info: N AMER PHILIPS/DISCRETE S5E D • ^53^31 QGlfiG7S Q ■ BFR93 T -3I-I7 N-P-N 1 GHz WIDEBAND TRANSISTOR N-P-N transistor in a SOT-23 plastic envelope. It is primarily intended fo r use in u.h.f. and microwave amplifiers in thick and thin-film circuits, such as in aerial amplifiers, radar systems, oscilloscopes,
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bfr93ot-23bft93t-31-17+4dbfr93t-989bfr91sot-23 marking jn
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BSX20
Abstract: BSX19 amer philips epitaxial silicon planar epitaxial transistors TS1013
Contextual Info: L _ I _ • bb53T31 0015MÔÔ b m - =-N AMER P H I L I P S / D I S C R E T E OLE D Il Il BSX19 BSX20 SILICON PLANAR EPITAXIAL TRANSISTORS
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d015mbsx19bsx2010vbsx19+4bbs3131amer philips epitaxialsilicon planar epitaxial transistorsts1013
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thyristor BT 605
Abstract: BYX46 RECTIFIER DIODES PHILIPS BYX BYX46-200 BYX46-200R BYX46-600 BYX46-600R diode 10di
Contextual Info: N AM ER P H IL IP S /D IS C R E T E 25E h h 5 3 ^ 3 l D Q 052Ö 5S 4 • BYX46 SERIES T - 0 3 - / 9 FAST SOFT-RECOVERY RECTIFIER DIODES • With controlled avalanche Diffused silicon diodes in DO-4 metal envelopes, capable of absorbing transients. T hey are prim arily
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s3t31byx46t-03-/9byx46-200+7byx46-600byx46-200rbyx46-600rt-03-19thyristor bt 605rectifier diodes philips byxdiode 10di
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ECG953
Abstract: ECG954 ECG963 ECG964
Contextual Info: EC G : PHILIPS -r INC 17E bbSBTSfl DQD5137 ECG953, ECG 954 Adjustable Pos and IMeg Voltage Regulators Sem iconductors E C G 9 5 3 - Positive Voltage Regulator E C G 9 5 4 - Negative Voltage Regulator Features * O utput current in excess o f 1 A .125 _ 3.18
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dgd5137ecg953ecg954ecg95x+3ecg953/954ecg963ecg964
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BUX88
Abstract: IEC134 9a 1b
Contextual Info: N AMER PHILIPS/DISCRETE 5SE D • bbS3T31 ’g OIIOSÌ S ■ BUX88 - ,- - - _ A r - 3 3 - | g SILICON DIFFUSED POWER TRANSISTOR High-voltage, high-speed, glass-passivated npn switching transistor in a TO-3 envelope intended for
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bbs3t31bux88r-33-ifft-33-15+47z888997z8822siec1349a 1b
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