BT THYRISTOR Search Results

BT thyristor

Abstract: teg thyristor thyristor bt 13 thyristor BT thyristor bt 13 g
Contextual Info: Contents Page G eneral A lphanum erical Index 4 Sym bols and Term s 8 IG B Ts IGBT 1 1 ,1 5 IGBT with D iode 1 1 ,1 5 IG BT B IM O S FE T 12 IG BT M odules 13 ISOSMART IG BT M odules 14 P o w er M O S FE Ts H iP erFE T 17 S tandard M O SFET 20 M O S FE T M odules

KT119A

Abstract: KY 189 BT120 BY190 BY189 KT120A scans-048 BT119 DSAGER00017 KY189
Contextual Info: BT 119.BT 121 S ch n elle S iliziu m -T h y risto ren für H orizontalablenkschaltungen in Fernsehem pfängern, besonders in V erbin­ dung mit den schnellen G leichrichtern BY 189 und BY 190 siehe Seite 194 . Versorgungsspannung 2 8 0 V entsprechend 2 2 0 V ~ Netzspannung. Für alle

thyristor st 103

Abstract: thyristor BT 200 Thyristor BT 102 BT 139 F applications note
Contextual Info: BT 1 5 1 -6 5 0 R ST AN DARD Glass Passivated thyristor in a plastic envelope, intended for use in application blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial, domestic lighting,heating and static switching.

BT diode

Abstract: ECONOPACK mounting instructions bsm 25 gd 1200 n2 bsm 75 gd 120 n2 bsm 50 gd 120 n2 calculation of IGBT snubber siemens igbt BSM 200 GA 120 BSM15GD120DN2 diode bym 26 siemens igbt BSM 100
Contextual Info: Technische Angaben Technical Information SIEMENS 1 Übersicht IGBT-Module 1 O verview IG BT Modules Hochsperrende spannungsgesteuerte Bipolar-Module Insulated Gate Bipolar Transistor modules Produktpalette Product Range IGBT-Module mit den Spannungen 600 V,

SC146

Abstract: thyristor BT 200
Contextual Info: MOTOROLA SC DI O D E S / O P T O b4E J> b3fc>7255 DDÖbl BT 5S7 SC141 SC146 Triacs Bidirectional Triode Thyristors . . . designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies.

mosfet to ignition coil

Abstract: 12v DC motor speed control using scr AN-7503 Ignition Transformer dc motor speed control using scr driver ge motors ac 110v DC motor speed control circuit with SCR thyristor family speed control of dc motor using scr
Contextual Info: The Application Of Conductivity-Modulated Field-Effect Transistors Application Note Summary bt he pliion nctivodued ldect antors utho eyrds terrpoon, minctor, er ) OCI O frk ge- The development of conductivity-modulated field-effect transistors, FETs, makes available to the system designer

RCD snubber

Abstract: calculation of IGBT snubber IGBT snubber for inductive load RC VOLTAGE CLAMP snubber circuit chokhawala carroll snubber design tool snubber resistance of IGBT IGBT snubber RCD snubber for igbt 150a gto in electronic rcd snubber
Contextual Info: Snubber C onsiderations for IG BT A pplications Yi Zhang, Saed Sobhani, Rahul Chokhawala International Rectifier Corporation Applications Engineering 233 Kansas St., El Segundo, CA 90245 Abstract: Snubber circuits can be used to protect fast switching IGBTs from the turn-on and turn-off voltage

transistor bt 808

Abstract: "General Electric SCR Manual" 6th BT thyristor 808 General Electric SCR Manual 6th edition IBJT General Electric SCR components Data Manual TA84-5 AN918 MOTOROLA Severns 7402N
Contextual Info: Parallel Operation Of Insulated Gate Transistors Application Note bt raleran Of ued te antors utho eyrds ter- C IMOS rpoon, minctor, ache ergy ted, itch wer pes, wer itch - RMOD g + VBE ITOT + VCE - - + VDS IBJT ITOT = IMOS + IBJT IBJT = βBJTIMOS VBE + IMOSRMOD = VDS

AN-7505

Abstract: fairchild low power transistor 1977
Contextual Info: Improved IGBTs with Fast Switching Speed And High-Current Capability Application Note December 1993 AN-7505 Abstract Title N86 bt mpro d BTs h t itch eed d ghrt paty utho eyrds terrpoon, minctor, er ) OCI O frk Conventional vertical power MOSFETs are limited at high

BT thyristor

Abstract: thyristor BT thyristor bt 3A
Contextual Info: a ix Y S FRED, Rectifier Diode and Thyristor Chips in Planar Design Fast Recovery Epitaxial Diodes FRED Pow er switches (IG BT, M O S F E T , BJT, G T O ) for applications in electronics are only a s go o d a s their a sso ciated free­ wheeling diodes. At increasing switching frequencies, the pro­

IS020

Abstract: IS120 IS08 SCR IS020 IS420 SCR IS48 IS310 is620 IS320 Hutson Industries
Contextual Info: HUTSON INDUSTRIES bT D e J 4b447DO D O D D ^ 3 f HUTSON INDUSTRIES Hutson ISOTAB*-packaged SCRs featuring an improved electrical isolation technique, will withstand a minimum of 1600 VAC from leads to tab for one minute at 80°C case temperature. Some feature Beryllium Oxide isola­

16 amp SCR application

Abstract: SCR 214 s635 S525 scr 6 Ampere scr bt series 200 A SCR 75 Volts 10 amp heat sink of scr thyristor BT 200 thyristor BT
Contextual Info: bT HUTSON INDUSTRIES DE I 4 b 4 Ll7DD t | HUTSON INDUSTRIES » j PRESS FIT SERIES! SCR's 8 AMPERE CENTER GATE 10 AMPERE CENTER GATE 20 AMPERE CENTER GATE 25 AMPERE CENTER GATE 35 AMPERE CENTER GATE Hutson’s SCR’s feature proprietary, void-free glass passivated chips and are herm etically sealed to

BT 140-600

Abstract: BT138F-600E 138F-600 139X-800G triac+mw+151+500r
Contextual Info: Philips Semiconductors Index Thyristors and Triacs |TYPE NUMBER Ht e c h n o l o g y He n v e l o p e |PAGE B R 100/03 DIAC SO D27 32 BR100/LLD DIAC SO D80 34 B T 134-500 B T 134-600 B T 134-800 BT134-500F BT134-600F B T 134-800F BT134-500G BT134-600G BT 134-800G

d856

Abstract: bt151 thyristor Curve Thyristor TAG bt151 as voltage regulator BT151-500R BT151 motor application 800R BT151 bt151 500r
Contextual Info: N AMER PHILIPS/DISCRETE bTE D • bt>S3^3]. D0B7301 R31 H A P X BT151 SERIES I THYRISTORS Glass-passivated th y ris to rs in T 0 -2 2 0 A B envelopes, w h ich are p a rtic u la rly suitable in situations creating high fatigue stresses involved in therm al cyclin g and repeated sw itching. A p p lica tio n s include

MH1SS1

Abstract: TESLA mh 7400 MH 7404 mh 7400 tesla cdb 838 tda 7851 L 741PC TDB0124DP tda 4100 TDA 7851 A
Contextual Info: m ö lk ^ o e le l-c te n a n il-c Information Applikation RGW Typenübersicht Vergleich Teil 2: RGW M iM U Z A U l KÉD lnrüÖC=SraO Information Applikation HEFT 50 RGW Typenübersicht + Vergleich Teil 2: RGW wob Halbleiterwerk Frankfurt /oder bt r iab im v«b kombinat mikrootektronik

an5296

Abstract: AN5296 Application note CA3018 AN5296 Application of the CA3018 Integrated AN5296 application note "Application of the CA3018" ca3046 Thyristor bst 2 high voltage operational amplifier ic AN5296 Application of the CA3018 CA3146A
Contextual Info: CA3146, CA3146A, CA3183, CA3183A TM T ODUC T T E PR E ODUC L R O P S E T OB U IT 3 BST A308Sheet L E SU 86, CData POSSIB 3046, CA30 CA itle A31 , 314 , 318 318 bt ighlte ntor rays utho ) eyrds terrpoion, ee, nsisay, st N, V, ma ma, z ft, h lt- May 2001 File Number

Thyristor bst 2

Abstract: CA3082 transistor arrays 5v CA3081 DR2000 40736R CA3081F CA3081M CA3082M CA3082M96
Contextual Info: CA3081, CA3082 CT UCT PRODU E T PROD E E L T O U S IT B SIL O ST -INTER E SU B 8 L 8 8 IB S 1 PO S onsData Sheet om FOR A tral Applicati @in tersil.c p n p e call C mail: centa or e General Purpose High Current NPN Transistor Arrays itle A30 , 308 bt enl rse

triac BT 40 amp

Abstract: thyristor BT 200 HUTSON INDUSTRIES TRIAC
Contextual Info: bT HUTSON INDUSTRIES DE l M b W D O DDP P 5 1 5 □ | hUTSON INDUSTRIES ITRIAC’S mm. Û 60 AMPERE PRESS-FIT SERIES POWER TRIACS tm n ÈÈ à tìB uStaâà«ii«aM it£ âliljÉ É i PR ES S-FIT 200!£?! _ DIA- fRWTT This power triac series is the result of Hutson’s

triacs bt 12

Abstract: bt136 600e triacs bt 16
Contextual Info: Philips Semiconductors Selection Guide Thyristors and Triacs SILICON BIDIRECTIONAL TRIGGER DEVICES Ifrm V|BO ' BO) TY P E NUM BER EN VELO PE (A) (V) (V) 2 2 8 -3 6 50 nA BR100/03 SOD27 2 2 8 -3 6 50 nA BR100/LLD SOD80 STANDARD THYRISTORS It(AV) V qRMi V rrm

136S6

Abstract: thyristor BT 161 triacs BT 412 BT thyristor T0252 BTA212-500D 136S-600F Triacs BTA208 600B BTA208 137B-800G
Contextual Info: Philips Semiconductors Power Thyristors and Triacs II TYPE NUMBER Index [TECHNOLOGY BR100/03 DIAC BT131-500 BT131-600 FOUR QUADRANT TRIACS BT132-500D BT132-600D FOUR QUADRANT TRIACS BT134-500 BT134-500D BT134-500E BT134-500F BT134-500G BT134-600 BT134-600D

SOT186A

Abstract: Triacs bt 137 BT149 and BT169 220AB BT138 Series E BTA208BX BT149 BTA212BX
Contextual Info: Philips Semiconductors Concise Catalogue 1996 Thyristors and Triacs POWER SEMICONDUCTORS THYRISTORS V RRM max. ' t rms max. (V) (V) 0.8 200 - 600 200 - 600 200 400 - 600 400 - 600 500 500 - 800 500 - 800 500 - 800 500 - 800 400 - 800 500 - 800 0.8 08 1

BTY87

Abstract: BTY91-200R BTY87-600R BTW47-1400R BTY87-800R BTY87-400R BTY91-400R RCA 8401 BTY87-100R CR18-201B
Contextual Info: LOW POWER THYRISTORS — 10 to 14A •t A V 8 5 ° C >TSM 10 A 160 |2t A 130 A2siec Typ e No. d v /d t = 20V /p S d v /d t= 2 0 0 V /p S V C R 1 2-051 CR12-101 CR1 2-201 CR1 2-301 CR1 2-401 CR1 2-501 CR12-601 50 100 200 300 403 500 600 B B B B B B B CR1 2-051

Z0103MN

Abstract: BT152-R BT151-RT Z0107MN BT1308-D bt148 BT169D-L BT151L bt138 sot223 SOT404
Contextual Info: Thyristors 4-Quadrant Triacs IT RMS (A) 0,6 0,8 1 4 6 8 12 16 20 25 VDRM (V) 400 600 400 / 600 400 / 600 600 600 600 / 800 600 / 800 600 / 800 600 / 800 600 / 800 600 / 800 600 600 800 600 800 600 600 600 / 800 800 800 600 800 600 600 600 800 800 800 800

Contextual Info: SKKE 290F THYRISTOR BRIDGE,SCR,BRIDGE DQMK DQQK ORQKM S @TT % '40124H4 F0-H. 3 , )*+2*H)HE )7.,0+2)*5 D D OR%D S UVC % 'E2*< BWCX TC IYX Z( S BCV [$5 ¥CC ¥CC Symbol Conditions OR%D ORMK 2`+ SEMIPACK 2 Fast Diode Modules SKKE 290F M]]? UVCRC¥ Values Units