BT 1400 Search Results

F50060A

Abstract: p416 diode P658
Contextual Info: TM Speed PROFET BT F5 0060- 1T E A Smart High-Side Power Switch, One Channel High PWM Frequencies Datasheet Rev. 1.1, 2011-05-26 Automotive BTF50060-1TEA 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

P626 Transistor

Abstract: IC P626 8V p616
Contextual Info: TM Speed PROFET BT F5 0060- 1T E A Smart High-Side Power Switch, One Channel High PWM Frequencies Datasheet Rev. 1.2, 2011-09-01 Automotive BTF50060-1TEA 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Contextual Info: PR OFET + 12V BT S5045- 1E J A Smart High-Side Power Switch Single Channel, 45mΩ Data Sheet Rev. 2.2, 2013-09-06 Automotive Power BTS5045-1EJA Table of Contents Table of Contents 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Contextual Info: PR OFET + 12V BT S5090- 1E J A Smart High-Side Power Switch Single Channel, 90mΩ Data Sheet Rev. 2.2, 2013-09-06 Automotive Power BTS5090-1EJA Table of Contents Table of Contents 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

diode uc 31u

Abstract: CM100TF-28H diode A26C
Contextual Info: m N EREX CM100TF-28H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 SÍX-IGBTIG BT M O D H-Series Module 100 Amperes/1400 Volts Description: Powerex IG BTM O D ™ Modules are designed for use in switching applications. Each module consists

332MCP

Abstract: NTE307 27MHz rf transmitter NTE332 T0202 NTE297 NTE300 T072 T092 297MP
Contextual Info: Bt-POLAR TRANSISTORS NTE Type Number Polarity and Material 297MP NPN-Si 298 PNP-Si Description and Application Matched Pair of NTE297 : » Audio Amp, Driver Compì to NTE297 Collector to Base (Volts) Collector to Emitter (Volts) Emitter Case Style Diag.

PAIRGAIN

Contextual Info: HC55120, HC55121, HC55130, HC55131, HC55140, HC55141, HC55142, HC55143, HC55150, HC55151 TM Data Sheet itle C55 0, 551 , 551 , 551 , 551 , 551 , 551 , 551 , 551 , 551 bt ow wer irsal IC m) utho ) eyrds terrpo- June 2001 File Number Low Power UniSLIC14 Family

TRANSISTOR c 5578 B

Abstract: 603 transistor npn
Contextual Info: PhHjP^emjconductor^^ _ bbSBTBl 0 0 3 1 4 bT T3 E • A P X ^Productspecification NPN 5 GHz wideband transistor — DESCRIPTION BFP90A H AriER PHILIPS/DISCRETE blE ] PINNING NPN transistor in hermetically sealed, sub-miniature SOT173and SOT173X micro-stripline envelopes. It is

Thomson-CSF POLYESTER capacitors

Abstract: 100nK63 BF014
Contextual Info: Contents Page Comparative table of the plastic film dielectric characteristics 4 Characteristics of the metallized polyester film dielectric capacitors 5 Type selection guide 10 How to order 11 Types & taping Radial le a d s -B F CPM-83 - B H (CPM-N) - BT (CPM85)

Contextual Info: BN/BT Series T1 3 /4 Right Angle LED Bar* *Patented • Customized to your specifications without tooling charges — Variable LED spacing, minimum .245" maximum bar length 6" — Variable color sequence • Available with 2 to 24 T1 3 /4 LEDs in one convenient assembly

20N60A4

Abstract: 20N60A4 equivalent TA49339 IGBT 20n60a4 20N60A HGTG20N60A4 ICE 280 HGTG20N60A4D HGTP20N60A4 LD26
Contextual Info: HGTG20N60A4, HGTP20N60A4 Data Sheet Title GT 0N6 4, GTP N60 bt 0V, MPS ries October 1999 600V, SMPS Series N-Channel IGBTs Features The HGTG20N60A4 and HGTP20N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the

Contextual Info: LOC THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. € COPYRIGHT - DIST REVISIONS HC 00 LTR DUN DATE DESCRIPTION RELEASE 06/18/01 APVD V bt/39/01 7,00 n D D 3,00 .118 s CABLE LENGTH (N.T.S) B FERRULE

str f 6264

Abstract: YT-30008
Contextual Info: SANYO SEMICONDUCTOR CORP 3SE D B 7^707^ 0 D07Ö2Ö 4 El The LC7020AT, BT are controllers for direct PLL ICs LM7000, LM7001. They can be used to form a PLL frequency synthesizer with clock, 2 bands for car use. 1. Functions and Features (1) Receiving frequency'

Contextual Info: PART NUMBER: 334PMB302K# IG BT SNUBBER POLYPROPYLENE CAPACITO RS LUG TERMINALS Parts are RoHS com pliant Date code w hen parts became RoHS: 14 /C ELECTRICAL SPECIFICATIONS C apacitance: 0.33 uF T ole ra n ce: -10 % . +10 % Dissipation Factor: 0.0005 Max at 1000 Hz and 25°C

sk 8050 sd power ic

Abstract: LM7000 LM7001 sk 8050 rf LA2200 sk 8050 ic YT-30007 FML 612 sk 8050 sd LC7020AT
Contextual Info: O rdering num ber: EN 2782 CMOS LSI sArno r LC7020AT, 7020BT No. 2782 i Controller for PLL Frequency Synthesizer The LC7020AT, BT are controllers for direct PLL ICs LM7000, LM7001. They can be used to form a PLL frequency synthesizer with clock, 2 bands for car use.

Contextual Info: Extract from the online catalog FL BT EPA Order No.: 2692788 Commercial data EAN 4046356422413 Pack 1 Weight/Piece 256.60 g Catalog page information Page 215 AX-2009 Please note that the data given here has been taken from the online catalog. For comprehensive

F15P06

Abstract: RFD15P06SM9A RFD15P06 RFD15P06SM RFP15P06 TB334
Contextual Info: RFD15P06, RFD15P06SM, RFP15P06 Data Sheet Title FD1 06, D15 6S P15 6 bt A, V, 50 m, anwer OSTs) utho eyrds ter- July 1999 15A, 60V, 0.150 Ohm, P-Channel Power MOSFETs Features These P-Channel power MOSFETs are manufactured using the MegaFET process. This process which uses feature

11n50

Abstract: RF5365 WLAN 11n RF Receiver WLAN 11n RF Receiver circuit diagram
Contextual Info: RF5365 RF53653.3V, 2.4GHz 802.11b/g/n WLAN FrontEnd Module 3.3V, 2.4GHZ 802.11b/g/n WLAN FRONTEND MODULE Features    RX C_BT C_RX 10 1 Vreg BT 2 8 GND 7 ANT Pdetect Coupler Output Power: 11b=21dBm Meeting Spectral Mask 11n=18dBm at <3% EVM TX 2170

Contextual Info: ISL9R460P2 Data Sheet FINAL DRAFT Title URP 60 bt A, 0V rafa ode) utho eyrds ter- ts, ctirs, ft 5031 Features The ISL9R460P2 is a Stealth diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current

ISL9H2060EG3

Abstract: LD26 igbt 400V 20A
Contextual Info: ISL9H2060EG3 Data Sheet Title L9 060 3 bjec 0V, MPS LGC ries ann BT h tialle 600V, SMPS II LGC Series N-Channel IGBT with Anti-Parallel StealthTM Diode The ISL9H2060EG3 is a Low Gate Charge LGC) SMPS II IGBT combining the fast switching speed of the SMPS

f40n10le

Contextual Info: RFG40N10LE, RFP40N10LE, RF1S40N10LESM Data Sheet Title FG4 10L P40 0LE 1S4 10L M bt A, 0V, 40 m, gic vel anwer OSTs) utho October 1999 40A, 100V, 0.040 Ohm, Logic Level N-Channel Power MOSFETs Features These N-Channel enhancement mode power MOSFETs are manufactured using the latest manufacturing process

k1560g3

Contextual Info: ISL9K1560G3 FIN A L D R A FT Title URP 60 bt A, 0V rafa ode) utho eyrds ter- ts, ctirs, ft File Number xxxx Features The ISL9K1560G3 is a StealthTM dual diode optimized for low loss performance in high frequency hard switched applications. The StealthTM family exhibits low reverse

Contextual Info: BN/BT Series T1 3/4 Right Angle LED Bar* *Patented Special Features • Customized to your specifications without tooling charges — Variable LED spacing, minimum .245˝ maximum bar length 6˝ — Variable color sequence • Available with 2 to 24 T1 3/4 LEDs in one convenient assembly

"LED BAR"

Abstract: led super bright red two lead st 9121 5mm red led LED 5mm standard led bicolor yellow led 5mm
Contextual Info: BN/BT Series T1 3/4 Right Angle LED Bar* *Patented Special Features • Customized to your specifications without tooling charges — Variable LED spacing, minimum .245˝ maximum bar length 6˝ — Variable color sequence • Available with 2 to 24 T1 3/4 LEDs in one convenient assembly