BSS123 MARKING Search Results

bss123 marking sa

Contextual Info: Supertex Inc. BSS123 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVdss / R d S o n Order Number / Package ' d (ON) Product marking for TO-236AB: b v dgs (max) (min) TO-236AB* SA* 100V 6.0Q 0.5A BSS123 where * = 2-week alpha date code

Contextual Info: Supertex inc. BSS123 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dss/ b v dgs R dS ON (m ax) Id(ON) (m in ) 100V 6.0Q. 0.5A O rder N um ber / Package Product marking for TO-236AB: TO-236AB* SA* BSS123 where = 2-week alpha date code

BSS123 spice

Abstract: K23 SOT23 marking K23 BSS123 K23 SOT23 MARKING BSS123-7 250dk SOT23 K23 bss123 MARKING CODE BSS123-7-F
Contextual Info: BSS123 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT SPICE MODEL: BSS123 Features • · · · · · Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage High Drain-Source Voltage Rating Also Available in Lead Free Version

3V02

Contextual Info: – E ET L O BS BSS123 O –N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) Order Number / Package Product marking for TO-236AB: TO-236AB* SA❋ 100V 6.0Ω 0.5A BSS123 where ❋ = 2-week alpha date code

SOT-23 marking 717

Abstract: SAP SOT23 sot-23 MARKING CODE 718
Contextual Info: BSS123 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) Order Number / Package Product marking for TO-236AB: TO-236AB* SA❋ 100V 6.0Ω 0.5A BSS123 where ❋ = 2-week alpha date code *Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.

DS30366

Abstract: K23 SOT23 BSS123 BSS123-7-F BSS123A BSS123 spice
Contextual Info: SPICE MODEL: BSS123 BSS123 NEW PRODUCT N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · · Low Gate Threshold Voltage SOT-23 Low Input Capacitance Min Max A 0.37 0.51 B 1.20 1.40 C 2.30 2.50 D 0.89 1.03 G E 0.45 0.60 H G 1.78 2.05

BSS123

Abstract: Philips RDS business MSB003 BP317 MBB692
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BSS123 N-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor

B55123

Abstract: bss123 marking BSS123 BSS100L XBSS123 125C-2
Contextual Info: N-Channel Enhancement Mode Vertical DMOS FET BSS100L /BSS123 FEATURES • • • • • • • Compact Geometry Fast Switching Speeds No Secondary Breakdown Excellent Temperature Stability High Input Impedance Low C urrent Drive Ease of Paralleling APPLICATIONS

SOT-23 Product Code bss123

Abstract: DSS SOT23 marking 9a sot-23
Contextual Info: ^ B S S 1 23 Supertex ine. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices BVdgs R dS ON (max) îf b v dss/ 100V 6£2 0.5A Product marking for SOT-23: Order Number / Package SOT-23 SA* BSS123 where * = 2-week alpha date code

TR40-10

Abstract: SA SOT-23 MARKING CODE 028a sot 23 Q62702-SS12
Contextual Info: BEE D • û23b32G 0017155 5 « S I P SIPMOS N Channel MOSFET SIEMEN S/ SPCL-, SEMICONDS t * " 3 S *- 2S " BSS123 _ ~_ • SIPMOS - enhancement mode • Draln-source voltage Vf>« = 100V • Continuous drain current I o - 0.17A • Draln-source on-reslstance

20PF

Abstract: BSS123 bss123 marking
Contextual Info: BSS123 Power MOSFET N-Channel 3 DRAIN SOT-23 Features: *Low On-Resistance : 6.0 Ω *Low Input Capacitance: 20PF *Low Out put Capacitance : 9PF *Low Threshole :2.8V *Fast Switching Speed : 20ns 3 1 GATE 1 2 2 SOURCE Application: * DC to DC Converter * Cellular & PCMCIA Card

BSS123

Abstract: BSS123-7 J-STD-020A K23 SOT23 MARKING transistor bss123
Contextual Info: BSS123 NEW PRODUCT N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage High Drain-Source Voltage Rating SOT-23 A · · · · Min Max A 0.37

Contextual Info: BSS123 Power MOSFET N-Channel 3 DRAIN SOT-23 Features: *Low On-Resistance : 6.0 Ω *Low Input Capacitance: 20PF *Low Out put Capacitance : 9PF *Low Threshole :2.8V *Fast Switching Speed : 20ns 3 1 GATE 1 2 2 SOURCE Application: * DC to DC Converter * Cellular & PCMCIA Card

Contextual Info: BSS123 Power MOSFET N-Channel 3 DRAIN * “G” Lead Pb -Free Features: *Low On-Resistance : 6.0 Ω *Low Input Capacitance: 20PF *Low Out put Capacitance : 9PF *Low Threshole :2.8V *Fast Switching Speed : 20ns SOT-23 3 1 GATE 1 2 2 SOURCE Application: * DC to DC Converter

BSS123Q-13

Abstract: DS30366 bss123 c23 K23 SOT23 K23 mOSFET BSS123Q-7
Contextual Info: BSS123 N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits V BR DSS RDS(ON) ID TA = 25°C 100V 6.0Ω @ VGS = 10V 0.17 • • • • • • • Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage High Drain-Source Voltage Rating

SAs SOT23

Abstract: BSS123 E6327 Q62702-S512 Q67000-S245 sas sot23-3 bss123 infineon sot23
Contextual Info: BSS123 Rev. 1.0 SIPMOS Small-Signal-Transistor Feature Product Summary • N-Channel VDS • Enhancement mode RDS on • Logic Level ID • dv/dt rated 100 V 6 Ω 0.17 A SOT23 3 Drain pin 3 Gate pin1 2 Source pin 2 1 VPS05161 Type Package Ordering Code

BSS123

Abstract: SAs sot23 BSS123 L6433 L6327 PG-SOT23 PG-SOT-23
Contextual Info: BSS123 Rev. 1.41 SIPMOS Small-Signal-Transistor Feature Product Summary • N-Channel VDS • Enhancement mode RDS on • Logic Level ID • dv/dt rated 100 V 6 Ω 0.17 A PG-SOT23 3 Drain pin 3 • Qualified according to AEC Q101 Gate pin1 2 Source pin 2

ZVN4206E

Abstract: bss123 marking sa B55123 2N7002 BS170F BSS123 BSS138 VN10LF ZVN3306F ZVN3310F
Contextual Info: SELECTION TABLES B V dss Id V mA at Id Max. mA Min. Pd ^D S on V GS(thl / > Part number 1 TABLE 4: SOT-23 MOSFETS 'SOTFETS' S2 Max. Id mA V qs V Package marking w N-channel ZVN3320F 200 60 1 1 3 1 25 100 10 250 BSS123 100 170 0.68 0.8 2.8 1 6 100 10 360 SA

sot23 marking M6p

Abstract: PMBFJ111 PMBFJ174
Contextual Info: Philips Semiconductors Marking codes Small-signal Field-effect Transistors Types in SOT23, SOT89, SOT143 and SOT343 envelopes are marked with a code as listed in the following tables. TYPE NUM BER M A R K IN G CODE M A R K IN G TYPE NUMBER CODE TYPE NUM BER

B558

Abstract: B55123 BSS84A ZVN3310F ZVN4206E BSS66 BSS67 BSS79B BSS79C FMMT2222
Contextual Info: SOT-23 TRANSISTORS & DIODES SWITCHING TRANSISTORS NPN V cbo Volts Type BSS79B 75 75 B SS79C FMM T2222A 75 FMMT4400 60 60 FMMT4401 60 BSS66 BSS67 60 60 FMMT3903 FMMT3904 60 60 FMMT2222 40 FMMT4123 FMM T4124 30 FMMT2369A 40 40 FMMT2369 BSV52 20 VcEO Volts

ZVN4206E

Abstract: Small Signal MOSFETs FMMT4401 ZVN3320F B558 BSS66 BSS67 BSS79B ZVP2106 FMMT2222
Contextual Info: SOT-23 TRANSISTORS & DIODES SWITCHING TRANSISTORS NPN V cbo Volts Type BSS79B 75 75 B SS79C FMM T2222A 75 FMMT4400 60 60 FMMT4401 60 BSS66 BSS67 60 60 FMMT3903 FMMT3904 60 60 FMMT2222 40 FMMT4123 FMM T4124 30 FMMT2369A 40 40 FMMT2369 BSV52 20 VcEO Volts

MMBZ5321

Abstract: DVRN6056
Contextual Info: PRODUCT CHANGE NOTICE Contact Date: May 17, 2004 Implementation Date: July 17, 2004 Alert Category: Discrete Semiconductor Alert Type: Facility Expansion DCS/PCN-1037 PCN #: PCN #: 2004-1037 TITLE NOTICE OF FACILITY EXPANSION IMPACT None DESCRIPTION OF CHANGE

v729

Abstract: NTD80N02 BZX84C7V5LT3 CTX22 NCP5331 NCP5331FTR2 NCP5331FTR2G NTD60N03 AMD athlon design guide MOSFET TRANSISTOR SMD MARKING CODE nh
Contextual Info: NCP5331 Two−Phase PWM Controller with Integrated Gate Drivers The NCP5331 is a second−generation, two−phase, buck controller that incorporates advanced control functions to power 64−bit AMD Athlont processors and low voltage, high current power supplies.

ge 6065 all

Abstract: SMD 6 PIN IC FOR PWM BZX84C7V5LT3 LQFP-32 NCP5331 NCP5331FTR2 NTD60N03 NTD80N02 smd transistor rc1 T50-8b
Contextual Info: NCP5331 Two−Phase PWM Controller with Integrated Gate Drivers The NCP5331 is a second-generation, two-phase, buck controller that incorporates advanced control functions to power 64-bit AMD Athlont processors and low voltage, high current power supplies.