BSS12 Search Results

BSS123LT1G

Contextual Info: BSS123LT1G, BVSS123LT1G Power MOSFET 170 mAmps, 100 Volts N−Channel SOT−23 http://onsemi.com 170 mAMPS 100 VOLTS RDS on = 6 W Features • AEC−Q101 Qualified and PPAP Capable − BVSS123LT1G • These Devices are Pb−Free and are RoHS Compliant N−Channel

BSS123W-7-F

Abstract: BSS123W BSS123W-7 J-STD-020A
Contextual Info: BSS123W N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT SPICE MODELS: BSS123W Features • · · · · · Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage High Drain-Source Voltage Rating Also Available in Lead Free Version

TR40-10

Abstract: SA SOT-23 MARKING CODE 028a sot 23 Q62702-SS12
Contextual Info: BEE D • û23b32G 0017155 5 « S I P SIPMOS N Channel MOSFET SIEMEN S/ SPCL-, SEMICONDS t * " 3 S *- 2S " BSS123 _ ~_ • SIPMOS - enhancement mode • Draln-source voltage Vf>« = 100V • Continuous drain current I o - 0.17A • Draln-source on-reslstance

VP1304N2

Abstract: TP2540ND VN1304N3 VP3203N3 LND150N8 VN3205N5 VN1310N3 TN2510N8 TN0102N2 VP1306N2
Contextual Info: _ _ fflpSupertex inc. Device Page # Device Page # Device A lp h a n u m e ric Index Page # Device Page# 2N7002 BSS123 DN2535N2 DN2535N3 DN2535N5 20 24 28 28 28 TN2106K1 TN2106N3 TN2124K1 TN2501N8 TN2501ND 57 57 61 63 63 TP2504ND TP2506ND TP2510N8 TP2510ND

BSS123

Abstract: SAs sot23 BSS123 L6433 L6327 PG-SOT23 PG-SOT-23
Contextual Info: BSS123 Rev. 1.41 SIPMOS Small-Signal-Transistor Feature Product Summary • N-Channel VDS • Enhancement mode RDS on • Logic Level ID • dv/dt rated 100 V 6 Ω 0.17 A PG-SOT23 3 Drain pin 3 • Qualified according to AEC Q101 Gate pin1 2 Source pin 2

DS30366

Abstract: K23 SOT23 BSS123 BSS123-7-F BSS123A BSS123 spice
Contextual Info: SPICE MODEL: BSS123 BSS123 NEW PRODUCT N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · · Low Gate Threshold Voltage SOT-23 Low Input Capacitance Min Max A 0.37 0.51 B 1.20 1.40 C 2.30 2.50 D 0.89 1.03 G E 0.45 0.60 H G 1.78 2.05

SOT-23 marking 717

Abstract: SAP SOT23 sot-23 MARKING CODE 718
Contextual Info: BSS123 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) Order Number / Package Product marking for TO-236AB: TO-236AB* SA❋ 100V 6.0Ω 0.5A BSS123 where ❋ = 2-week alpha date code *Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.

BSS123W

Abstract: BSS123W-7 J-STD-020A
Contextual Info: BSS123W NEW PRODUCT N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage High Drain-Source Voltage Rating · · · · · Dim Min Max A 0.25

BSS123Q-13

Abstract: DS30366 bss123 c23 K23 SOT23 K23 mOSFET BSS123Q-7
Contextual Info: BSS123 N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits V BR DSS RDS(ON) ID TA = 25°C 100V 6.0Ω @ VGS = 10V 0.17 • • • • • • • Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage High Drain-Source Voltage Rating

marking code SA sot-23

Abstract: SOT-23 marking sa BSS123LT1 DIODE 8V SOT-23 SOT-23 9v
Contextual Info: BSS123LT1 Preferred Device Power MOSFET 170 mAmps, 100 Volts N−Channel SOT−23 MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDSS 100 Vdc Gate−Source Voltage − Continuous − Non−repetitive tp ≤ 50 µs VGS VGSM ± 20 ± 40 Vdc

2410l

Abstract: ND2406 ND2410L BSS129 ND2406L 2410* mosfet nd2410
Contextual Info: ND2406L/2410L, BSS129 N-Channel Depletion-Mode MOSFET Transistors Product Summary Part Number V BR DSV Min (V) ND2406L rDS(on) Max (W) VGS(off) (V) ID (A) 6 –1.5 to –4.5 0.23 10 –0.5 to –2.5 0.18 20 –0.7 (min) 0.15 240 ND2410L BSS129 230 Features

D8145

Abstract: BSS126 L6327 PG-SOT23 PG-SOT-23
Contextual Info: BSS126 SIPMOS Small-Signal-Transistor Product Summary Features • N-channel • Depletion mode V DS 600 V R DS on ,max 700 Ω I DSS,min 0.007 A • dv /dt rated • Available with VGS(th) indicator on reel • Pb-free lead plating; RoHS compliant PG-SOT-23

SOT23 K23

Abstract: K23 SOT23 MARKING
Contextual Info: BSS123 NEW PRODUCT N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage High Drain-Source Voltage Rating SOT-23 Max 0.37 0.51 B 1.20 1.40 C

Contextual Info: BSS123 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT SPICE MODEL: BSS123 Features • · · · · Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage High Drain-Source Voltage Rating SOT-23 A · ·

D001A

Abstract: F0016
Contextual Info: Type BSS127 SIPMOS Small-Signal-Transistor Product Summary Features • n-channel • enhancement mode V DS 600 V R DS on ,max 500 Ω 0.021 A ID • Logic level (4.5V rated) • dv /dt rated PG-SOT-23 • 100%lead-free; RoHS compliant • Qualified according to AEC Q101

BSS123W

Abstract: BSS123W-7-F
Contextual Info: SPICE MODELS: BSS123W BSS123W Lead-free Green NEW PRODUCT N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · · · · Low Gate Threshold Voltage SOT-323 A Low Input Capacitance D Fast Switching Speed Low Input/Output Leakage B C High Drain-Source Voltage Rating

Contextual Info: BSS123LT1* CASE 318-07, STYLE 21 SOT-23 TO-236AB M AXIM UM RATINGS Rating D r a in - S o u r c e V o lta g e G a t e - S o u r c e V o lta g e Symbol Value Unit VDSS 100 Vdc s r 35 Vdc 'd m 0 .1 7 0 .6 8 Sym bol Max Pd 225 mW 1.8 m W -'C r w a 556 c w T j . T s tq

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor BSS123LT1 N -C h an n el 3 DRAIN Motorola Preferred Device % 2 SOURCE 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Drain-Source Voltage VDSS 100 Vdc G ate-Source Voltage — Continuous — N on-repetitive tp < 50 ^s

C086

Abstract: f 0472 N-Channel MOSFET
Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA BSS123 Advance Information S m all-S ig n al Field E ffe c t T ran sisto r N-Channel Enhancement-Mode Silicon Gate TMOS N -C H A N N E L S M A L L -S IG N A L T M O S FET rD S o n l = 6 O H M S 100 V O L T S This TM O S FET is designed fo r h ig h -vo ltag e , h ig h ­

FDC6331

Abstract: fdp047an FDB045AN FQPF10N20 FQA70N15 FQPF*13N06L fdd5614p fqp50n06 TO252-DPAK FDC6305
Contextual Info: Discrete Temperature range Software version Revision date 2N7002 SOT-23-3 Electrical/Thermal 25°C to 125°C N/A N/A 2N7002MTF SOT-23-3 Electrical/Thermal 25°C to 125°C N/A N/A BS170 TO-92-3 Electrical 25°C to 125°C Orcad 9.1 Mar 22, 2002 BSS123 SOT-23-3

K23 mOSFET

Contextual Info: BSS123 N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits V BR DSS RDS(ON) ID TA = 25°C 100V 6.0Ω @ VGS = 10V 0.17 • • • • • • • Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage High Drain-Source Voltage Rating

BSS123Q-7-F

Abstract: MARKING CODE 028a sot 23
Contextual Info: BSS123 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR ADVANCE INFORMATION Product Summary Features and Benefits V BR DSS RDS(ON) ID TA = 25°C 100V 6.0Ω @ VGS = 10V 0.17 • • • • • • • Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed

bss123 sot23

Abstract: alternative bss123
Contextual Info: Obsolete. Alternative is BSS123. SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET BSS123A ISSUE 4 – APRIL 1998 FEATURES * BVDSS = 100V * Low Threshold S D PARTMARKING DETAIL – SAA G ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage

transistor 45 f 123

Contextual Info: c m p r M - iii n SEM IC ONDUCTO R September 1996 tm BSS100 / BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary,