BSS12 Search Results
BSS12 Datasheets (166)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| BSS12 | Unknown | Semiconductor Master Cross Reference Guide | Scan | 122.33KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSS12 | Unknown | Shortform Transistor Datasheet Guide | Short Form | 87.26KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSS12 | Unknown | Basic Transistor and Cross Reference Specification | Scan | 43.74KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSS12 | Unknown | Transistor Replacements | Scan | 72.26KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSS123 | Diodes Incorporated | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | Original | 66.95KB | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSS123 | Diodes Incorporated | N-CHANNEL ENHANCEMENT MODE MOSFET | Original | 104.4KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSS123 | Fairchild Semiconductor | TRANS MOSFET N-CH 100V 0.17A 3SOT-23 T/R | Original | 144.17KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSS123 | Fairchild Semiconductor | N-Channel Logic Level Enhancement Mode Field Effect Transistor | Original | 288.09KB | 10 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSS123 | Fairchild Semiconductor | N-Channel Logic Level Enhancement Mode Field Effect Transistor | Original | 72.36KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSS123 | Fairchild Semiconductor | N-Channel Logic Level Enhancement Mode Field Effect Transistor | Original | 522.94KB | 13 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSS123 | Infineon Technologies | SIPMOS Small-Signal Transistor | Original | 90.02KB | 7 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSS123 | Infineon Technologies | N-Channel Small Signal MOSFETs (20V - 800V); Package: PG-SOT23-3; Package: SOT-23; VDS (max): 100.0 V; RDS (on) (max) (@10V): 6,000.0 mOhm; RDS (on) (max) (@4.5V): 10,000.0 mOhm; RDS (on) (max) (@2.5V): -; | Original | 90.02KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSS123 | Philips Semiconductors | N-Channel Logic Level Enhancement Mode Field Effect Transistor | Original | 48.54KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSS123 | Philips Semiconductors | N-Channel Enhancement Mode Vertical D-MOS Transistor | Original | 74.23KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSS123 | Siemens | SIPMOS Small-Signal Transistor | Original | 76.31KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSS123 | Siemens | SIPMOS Small-Signal Transistor | Original | 1.51MB | 88 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSS123 | Siemens | Original | 1.09MB | 7 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSS123 | Siemens | SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level) | Original | 134.22KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSS123 | Toshiba | Power MOSFETs Cross Reference Guide | Original | 165.78KB | 67 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSS123 | Weitron | Power MOSFET N-Channel | Original | 89.35KB | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSS12 Price and Stock
onsemi BSS123LT1GPower MOSFET 170 mA 100 V N-Channel SOT-23 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BSS123LT1G | 189,000 |
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Buy Now | |||||||
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BSS123LT1G | 3,597,000 | 3,000 |
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Buy Now | ||||||
| BSS123LT1G | 1,830,000 | 3,000 |
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| BSS123LT1G | 189,000 | 3,000 |
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| BSS123LT1G | 93,000 | 227 |
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| BSS123LT1G | 5,566 | 47 |
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BSS123LT1G | Tape & Reel | 1,011,000 | 57 Weeks | 3,000 |
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Buy Now | ||||
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BSS123LT1G | 3,597,000 | 57 Weeks | 3,000 |
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Buy Now | |||||
| BSS123LT1G | 1,830,000 | 57 Weeks | 3,000 |
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| BSS123LT1G | 93,000 | 48 Weeks | 1 |
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| BSS123LT1G | Cut Strips | 5,566 | 1 |
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| BSS123LT1G | 3,489 | 57 Weeks | 1 |
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BSS123LT1G | 32,445 | 1 |
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BSS123LT1G | 10 |
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BSS123LT1G | 67,226 |
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BSS123LT1G | 1,654 |
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BSS123LT1G | 150,000 | 57 Weeks | 30,000 |
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BSS123LT1G | 6,957,000 | 53 Weeks | 3,000 |
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BSS123LT1G | 58 |
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BSS123LT1G | 6,990,000 | 53 Weeks | 3,000 |
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onsemi BSS123N-Channel Logic Level Enhancement Mode Field Effect Transistor 100V 170 mA 6Ω |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BSS123 | 150,000 |
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Buy Now | |||||||
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BSS123 | 225,000 | 3,000 |
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Buy Now | ||||||
| BSS123 | 150,000 | 3,000 |
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Buy Now | |||||||
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BSS123 | Tape & Reel | 82,436 | 3,000 |
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BSS123 | 21,600 |
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Buy Now | |||||||
| BSS123 | 21,600 |
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| BSS123 | 1,870 |
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BSS123 | 23,350 | 1 |
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BSS123 | 135 |
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BSS123 | 30,000 |
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BSS123 | 71 Weeks | 39,000 |
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BSS123 | 49 Weeks | 3,000 |
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BSS123 | 3,447,000 | 50 Weeks | 3,000 |
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BSS123 | 10 | 1 |
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Essentra Components CBSS-12-01PCB Support - Mounting Hole - Locking Arrowhead - Natural - Nylon - 17.3 mm (0.681 in) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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CBSS-12-01 | 400 |
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CBSS-12-01 |
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Samtec Inc BSS-125-01-H-D-A0.635 mm Basic Blade & Beam Socket Strip Edge Mount |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BSS-125-01-H-D-A |
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BSS-125-01-H-D-A |
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BSS-125-01-H-D-A | Bulk | 0 Weeks, -1 Days | 1 |
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ITT Interconnect Solutions DBBSS120D-Sub Ali B/S Sz B/25 11.9mm |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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DBBSS120 |
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DBBSS120 | Bulk | 22 Weeks | 2,000 |
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DBBSS120 |
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DBBSS120 | 23 Weeks | 2,000 |
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BSS12 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
BSS123LT1GContextual Info: BSS123LT1G, BVSS123LT1G Power MOSFET 170 mAmps, 100 Volts N−Channel SOT−23 http://onsemi.com 170 mAMPS 100 VOLTS RDS on = 6 W Features • AEC−Q101 Qualified and PPAP Capable − BVSS123LT1G • These Devices are Pb−Free and are RoHS Compliant N−Channel |
Original |
bss123lt1gbvss123lt1got-23aec-q101+1 | |
BSS123W-7-F
Abstract: BSS123W BSS123W-7 J-STD-020A
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Original |
bss123wot-323j-std-020amil-std-202+4 | |
TR40-10
Abstract: SA SOT-23 MARKING CODE 028a sot 23 Q62702-SS12
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OCR Scan |
23b32gbss123q62702-ss12oq171bo+3 | |
VP1304N2
Abstract: TP2540ND VN1304N3 VP3203N3 LND150N8 VN3205N5 VN1310N3 TN2510N8 TN0102N2 VP1306N2
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OCR Scan |
2n7002bss123dn2535n2dn2535n3+16 | |
BSS123
Abstract: SAs sot23 BSS123 L6433 L6327 PG-SOT23 PG-SOT-23
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Original |
bss123pg-sot23vps05161l6327+4 | |
DS30366
Abstract: K23 SOT23 BSS123 BSS123-7-F BSS123A BSS123 spice
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Original |
bss123ot-23ds30366k23 sot23+3 | |
SOT-23 marking 717
Abstract: SAP SOT23 sot-23 MARKING CODE 718
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Original |
bss123o-236abot-23sot-23 marking 717+2 | |
BSS123W
Abstract: BSS123W-7 J-STD-020A
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Original |
bss123wot-323j-std-020amil-std-202+4 | |
BSS123Q-13
Abstract: DS30366 bss123 c23 K23 SOT23 K23 mOSFET BSS123Q-7
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Original |
bss123ds30366bss123q-13bss123 c23+3 | |
marking code SA sot-23
Abstract: SOT-23 marking sa BSS123LT1 DIODE 8V SOT-23 SOT-23 9v
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Original |
bss123lt1ot-23marking code sa sot-23sot-23 marking sa+2 | |
2410l
Abstract: ND2406 ND2410L BSS129 ND2406L 2410* mosfet nd2410
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Original |
nd2406l/2410lbss129nd2406lnd2410l+7 | |
D8145
Abstract: BSS126 L6327 PG-SOT23 PG-SOT-23
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Original |
bss126pg-sot-23l6327l6906+2 | |
SOT23 K23
Abstract: K23 SOT23 MARKING
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Original |
bss123ot-23j-std-020amil-std-202+6 | |
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Contextual Info: BSS123 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT SPICE MODEL: BSS123 Features • · · · · Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage High Drain-Source Voltage Rating SOT-23 A · · |
Original |
bss123ot-23j-std-020amil-std-202+3 | |
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D001A
Abstract: F0016
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Original |
bss127iec61249-2-21pg-sot-23h6327+3 | |
BSS123W
Abstract: BSS123W-7-F
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Original |
bss123wot-323aec-q101j-std-020c+2 | |
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Contextual Info: BSS123LT1* CASE 318-07, STYLE 21 SOT-23 TO-236AB M AXIM UM RATINGS Rating D r a in - S o u r c e V o lta g e G a t e - S o u r c e V o lta g e Symbol Value Unit VDSS 100 Vdc s r 35 Vdc 'd m 0 .1 7 0 .6 8 Sym bol Max Pd 225 mW 1.8 m W -'C r w a 556 c w T j . T s tq |
OCR Scan |
bss123lt1ot-23o-236ab | |
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Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor BSS123LT1 N -C h an n el 3 DRAIN Motorola Preferred Device % 2 SOURCE 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Drain-Source Voltage VDSS 100 Vdc G ate-Source Voltage — Continuous — N on-repetitive tp < 50 ^s |
OCR Scan |
bss123lt1ot-23o-236ab | |
C086
Abstract: f 0472 N-Channel MOSFET
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OCR Scan |
bss123ot-23o-236aac0034+2 | |
FDC6331
Abstract: fdp047an FDB045AN FQPF10N20 FQA70N15 FQPF*13N06L fdd5614p fqp50n06 TO252-DPAK FDC6305
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Original |
2n70022n7002mtfbs170bss123+16 | |
K23 mOSFETContextual Info: BSS123 N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits V BR DSS RDS(ON) ID TA = 25°C 100V 6.0Ω @ VGS = 10V 0.17 • • • • • • • Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage High Drain-Source Voltage Rating |
Original |
bss123ds30366k23 mosfet | |
BSS123Q-7-F
Abstract: MARKING CODE 028a sot 23
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Original |
bss123ds30366bss123q-7-fmarking code 028a sot 23 | |
bss123 sot23
Abstract: alternative bss123
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Original |
bss123bss123a280ma170ma+3 | |
transistor 45 f 123Contextual Info: c m p r M - iii n SEM IC ONDUCTO R September 1996 tm BSS100 / BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, |
OCR Scan |
bss100bss123transistor 45 f 123 | |