BSS110 SIEMENS Search Results

BSS110

Abstract: BSS84
Contextual Info: May 1999 BSS84 / BSS110 P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density

BSS110

Abstract: BSS84 CBVK741B019 F63TNR PN2222N
Contextual Info: May 1999 BSS84 / BSS110 P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density

Contextual Info: SIEMENS BSS 110 SIPMOS Small-Signal Transistor • P channel • Enhancement mode • Logic Level • ^GS th = -0 .8 .-2 .0 V Type BSS 110 Vbs -50 V % -0.17 A Type BSS 110 BSS 110 BSS 110 Ordering Code Q62702-S500 Q62702-S278 Q67000-S568 ffDS(on) 10ß

Contextual Info: SIEMENS BSS 110 SIPMOS Small-Signal Transistor • P channel • Enhancement mode • Logic Level ' ^GS th = -0.8.-2.0 V Type BSS 110 ^DS -50 V Type BSS 110 BSS 110 BSS 110 Ordering Code Q62702-S500 Q62702-S278 Q67000-S568 -0.17 A ffDS(on) Package Marking

Sot23 SL6

Abstract: BSS315 siemens sot223 BSP296N BSS100 BSS125 BSP129 BSP17 BSP89 BSS129
Contextual Info: SIEMENS AKTIE NGE SELLSCHAF bOE D Ö235b05 0045424 77T « S I E G SIPMOS For complete package outlines, refer to pages PO-1 through PO-6 Low Power MOSFETs Type Maxim um Ratings N = N Channel P = P Channel BSP17 BSP88 BSP89 BSP92 BSP125 BSP129* BSP135* BSP149*

BSS110 Siemens

Contextual Info: SIEMENS BSS 110 SIPMOS Small-Signal Transistor • P channel • Enhancement mode 2 , sty • Logic Level I • ^GS th = -0.8.-2.0 V ^ 3 ^ VPT05158 Pin 1 Pin 2 S Type BSS 110 VDS -50 V b -0.17 A Type BSS 110 BSS 110 BSS 110 BSS 110 Ordering Code Q62702-S489

BSS87

Abstract: BSP315 SOT223 BSP171 BSS125
Contextual Info: SIPMOS For complete package outlines, refer to pages PO-1 through PO-6 Low Power MOSFETs Type M axim um Ratings N = N Channel P = P Channel BSP17 BSP88 BSP89 BSP92 BSP 125 BSP129* BSP135* BSP149* BSP171 BSP295 BSP296 BSP297 BSP298 BSP299 BSP315 BSP316 BSP317

s72 sot 23

Abstract: transistor marking s72 2N7019 2N7002 MARKING s72 2N7002 S72 SOT-23 s72 SOT23 Transistor s72 sot23 2n7002 transistor s72 S72 Transistor
Contextual Info: N & P CHANNEL MOSFETS ENHANCEMENT MODE N CHANNEL SOT-23 Cont. D-S Drain Voltage Current Type Marking V max A max BS870 S70 60 0.25 2N7002 S72 60 0.25 *: Pulse test width 80µs, 1% duty factor. Pwr. Dispn. TC=25˚C W max 0.31 0.31 Gate Thr. Volt. VGS=VDS ID=ImA

Q2N4401

Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
Contextual Info: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog

YTA630

Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Contextual Info: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509

IRF 544 N MOSFET

Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
Contextual Info: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no