BSS11 Search Results

BSS119

Abstract: E6327 Q67000-S007 infineon bss119 ID013
Contextual Info: BSS119 Rev. 1.0 SIPMOS Small-Signal-Transistor Feature Product Summary • N-Channel VDS • Enhancement mode RDS on • Logic Level ID • dv/dt rated 100 V 6 Ω 0.17 A SOT23 3 Drain pin 3 Gate pin1 2 Source pin 2 1 VPS05161 Type Package Ordering Code

BSS119

Abstract: L6327 PG-SOT23
Contextual Info: BSS119 Rev. 1.3 SIPMOS Small-Signal-Transistor Feature Product Summary • N-Channel VDS • Enhancement mode RDS on • Logic Level ID • dv/dt rated 100 V 6 Ω 0.17 A PG-SOT23 3 Drain pin 3 Gate pin1 2 Source pin 2 1 VPS05161 Type Package Pb-free Tape and Reel Information

Contextual Info: BSS119 Rev. 1.1 SIPMOS Small-Signal-Transistor Feature Product Summary • N-Channel VDS • Enhancement mode RDS on • Logic Level ID • dv/dt rated 100 V 6 Ω 0.17 A PG-SOT23 3 Drain pin 3 Gate pin1 2 Source pin 2 1 VPS05161 Type Package Ordering Code

BSS84

Abstract: BSS110
Contextual Info: FAIRCHILD M ay 1999 MICDNDUCTÜR i BSS84 / BSS110 P -Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancem ent mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density

marking BSs mosfet

Abstract: Q62702-S631
Contextual Info: BSS119 SIPMOS N Channel MOSFET • SIPMOS - enhancement mode • Drain-source voltage Vfc» = 100V • Continuous drain current / D = 0.17A • Drain-source on-resistance • Total power dissipation /%>•<«> = 6.00 P0 = 0.36W Type Marking Ordering code for

Contextual Info: BSS110 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)50 V(BR)GSS (V)20 I(D) Max. (A)170m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)680m @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)630m Minimum Operating Temp (øC)-55

Contextual Info: F /M R C H II-D May 1999 M ICONDUCTQR i BSS84 / BSS110 P -Channel Enhancement Mode Field Effect Transistor Features General Description These P-Channel enhancem ent mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density

BSS110

Abstract: BSS84
Contextual Info: May 1999 BSS84 / BSS110 P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density

Contextual Info: BSS11 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V) I(C) Max. (A) Absolute Max. Power Diss. (W)1.2 Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

PG-SOT-23

Contextual Info: BSS119 Rev. 1.5 SIPMOS Small-Signal-Transistor Feature Product Summary • N-Channel VDS • Enhancement mode RDS on • Logic Level ID • dv/dt rated 100 V 6 Ω 0.17 A PG-SOT23 3 Drain pin 3 • Qualified according to AEC Q101 Gate pin1 2 Source pin 2

bss110

Abstract: 017adc bss84
Contextual Info: PAIRCHII-D June 1995 M ICDNDUCTQ R tm BSS84/ BSS110 P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is

BSS84

Abstract: ROB SOT23 BSS110
Contextual Info: National Semiconductor~ June 1995 BSS84 / BSS110 P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.

PG-SOT23

Contextual Info: BSS119N OptiMOS Small-Signal-Transistor Product Summary Features VDS • N-channel RDS on ,max • Enhancement mode • Logic level (4.5V rated) 100 V VGS=10 V 6 W VGS=4.5 V 10 ID 0.19 A • Avalanche rated • Qualified according to AEC Q101 PG-SOT23 • 100% lead-free; RoHS compliant; Halogen free

BSS110

Abstract: BSS84 CBVK741B019 F63TNR PN2222N
Contextual Info: May 1999 BSS84 / BSS110 P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density

BSS110

Abstract: CGY20
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BSS110 P-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors 1995 Apr 07 Philips Semiconductors Product specification P-channel enhancement mode

TRANSISTOR D 570

Abstract: BSS110 INFINEON BSS110 B34 transistor
Contextual Info: Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor BSS110 FEATURES • Low threshold voltage • Direct interface to C-MOS, TTL, etc. • High speed switching • No secondary breakdown. APPLICATIONS • Intended for use as a Line current interruptor in

BSS119N

Contextual Info: BSS119N OptiMOS Small-Signal-Transistor Product Summary Features VDS • N-channel RDS on ,max • Enhancement mode • Logic level (4.5V rated) 100 V VGS=10 V 6 W VGS=4.5 V 10 ID 0.19 A • Avalanche rated • Qualified according to AEC Q101 PG-SOT23 • 100% lead-free; RoHS compliant; Halogen free

Contextual Info: BSS119 Rev. 1.2 SIPMOS Small-Signal-Transistor Feature Product Summary • N-Channel VDS • Enhancement mode RDS on • Logic Level ID • dv/dt rated 100 V 6 Ω 0.17 A PG-SOT23 3 Drain pin 3 Gate pin1 2 Source pin 2 1 VPS05161 Type Package Ordering Code

Contextual Info: BSS119 Rev. 1.4 SIPMOS Small-Signal-Transistor Feature Product Summary • N-Channel VDS • Enhancement mode RDS on • Logic Level ID • dv/dt rated 100 V 6 Ω 0.17 A PG-SOT23 3 Drain pin 3 Gate pin1 2 Source pin 2 1 VPS05161 Type Package Pb-free Tape and Reel Information

Contextual Info: BSS119N OptiMOS Small-Signal-Transistor Product Summary Features VDS • N-channel RDS on ,max • Enhancement mode • Logic level (4.5V rated) 100 V VGS=10 V 6 W VGS=4.5 V 10 ID 0.19 A • Avalanche rated • Qualified according to AEC Q101 PG-SOT23 • 100% lead-free; RoHS compliant; Halogen free

Contextual Info: BSS119 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)14 I(D) Max. (A)170m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)680m @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)360m Minimum Operating Temp (øC)-55

DS2505

Abstract: 007H DS2505P DS2505T DS2505V 2n7000 equivalent
Contextual Info: DS2505 DS2505 16K bit Add–Only Memory FEATURES • 16384 bits Electrically Programmable Read Only Memory EPROM communicates with the economy of one signal plus ground • Unique, factory–lasered and tested 64–bit registration number (8–bit family code + 48–bit serial number

Contextual Info: Common mode SS Coils SS11VL Type [RoHS [RoHS Compliant] Compliant] <Features> ･ Super low profile : 20.5mm max. 19.5±1mm ･ High permeability core realizes high inductance (SS11VL-R type) ･ Best suites for internal power supply of compact adaptor and other thin - cased devices.

Contextual Info: Common mode SS Coils SS11V/H-CH Type [RoHS [RoHS Compliant] Compliant] Rated current AC A 0.3 0.4 0.5 0.6 0.7 0.8 1.0 1.1 1.3 1.7 2.2 3.0 0.3 0.4 0.5 0.6 0.7 0.8 1.0 1.1 1.3 1.7 2.2 3.0 Model SS11V/H-03550-CH SS11V/H-04350-CH SS11V/H-05230-CH SS11V/H-06180-CH