BSO211P Search Results
BSO211P Datasheets (5)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| BSO211P | Infineon Technologies | OptiMOS-P Small-Signal-Transistor | Original | 81.57KB | 8 | ||
| BSO211P | Infineon Technologies | OptiMOS Small Signal MOSFET, -20V, SO-8, Ron=67m | Original | 91.63KB | 8 | ||
| BSO211PH | Infineon Technologies | FETs - Arrays, Discrete Semiconductor Products, MOSFET 2P-CH 20V 4A 8DSO | Original | 9 | |||
| BSO211PHXUMA1 | Infineon Technologies | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays - MOSFET 2P-CH 20V 4A 8DSO | Original | 456.14KB | |||
| BSO211PNTMA1 | Infineon Technologies | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays - MOSFET 2P-CH 20V 4.7A 8SOIC | Original | 84.06KB |
BSO211P Price and Stock
Infineon Technologies AG BSO211PNTMA1Trans MOSFET P-CH 20V 4.7A 8-Pin DSO T/R |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BSO211PNTMA1 | 997,500 | 703 |
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| BSO211PNTMA1 | 17,500 | 703 |
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| BSO211PNTMA1 | 15,000 | 703 |
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| BSO211PNTMA1 | 1,370 | 703 |
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BSO211PNTMA1 | 1,031,370 | 1 |
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BSO211PNTMA1 | 5,848 |
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Infineon Technologies AG BSO211PHXUMA1Trans MOSFET P-CH 20V 4A 8-Pin DSO T/R |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BSO211PHXUMA1 | 24,850 | 856 |
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| BSO211PHXUMA1 | 7,500 | 856 |
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BSO211PHXUMA1 | 32,350 | 1 |
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BSO211PHXUMA1 | 2,285 | 1 |
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BSO211PHXUMA1 | 5,554 |
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Infineon Technologies AG BSO211PPOWER FIELD-EFFECT TRANSISTOR, 4.7A I(D), 20V, 0.067OHM, 2-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BSO211P | 11,230 |
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BSO211P | 2,500 |
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Micross Components BSO211PPOWER FIELD-EFFECT TRANSISTOR, 4.7A I(D), 20V, 0.067OHM, 2-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BSO211P | 2,500 |
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BSO211P Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
BSO211PContextual Info: BSO211P Preliminary data OptiMOS-P Small-Signal-Transistor Product Summary Feature Dual P-Channel Enhancement mode Super Logic Level 2.5 V rated 150°C operating temperature Avalanche rated dv/dt rated VDS -20 RDS(on) 67 ID Type Package Ordering Code |
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bso211psis00070q67042-s4064 | |
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Contextual Info: BSO211P Preliminary data OptiMOS-P Small-Signal-Transistor Product Summary Feature • Dual P-Channel • Enhancement mode VDS -20 V RDS on 67 mΩ ID • Super Logic Level (2.5 V rated) • 150°C operating temperature • Avalanche rated • dv/dt rated |
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bso211psis00070q67042-s4064 | |
a70 so8Contextual Info: BSO211P H OptiMOS P-Power-Transistor Product Summary Features VDS • dual P-Channel in SO8 • Qualified according JEDEC for target applications • 150°C operating temperature RDS on ,max -20 V VGS=4.5 V 67 mW VGS=2.5 V 110 ID - 4.6 A • Super Logic Level (2.5V rated) |
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bso211piec61249-2-21a70 so8 | |
211P
Abstract: BSO211P IEC61249-2-21 JESD22-A114
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bso211piec61249-2-21211pjesd22-a114 | |
BSO211PContextual Info: BSO211P OptiMOS -P Power-Transistor TM Product Summary Feature • Dual P-Channel • Enhancement mode • 150°C operating temperature • Avalanche rated • dv/dt rated BSO211P P-SO 8 V RDS on 67 mΩ -4.7 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 Top View |
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bso211psis00070 | |
BSO211PContextual Info: BSO211P OptiMOS-P Small-Signal-Transistor Product Summary Feature • Dual P-Channel • Enhancement mode VDS -20 V RDS on 67 mΩ ID • Super Logic Level (2.5 V rated) • 150°C operating temperature • Avalanche rated • dv/dt rated S1 1 8 D1 G1 |
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bso211psis00070q67042-s4064 | |
BSO211PContextual Info: BSO211P Preliminary data OptiMOS-P Small-Signal-Transistor Product Summary Feature • Dual P-Channel • Enhancement mode VDS -20 V RDS on 67 mΩ ID • Super Logic Level (2.5 V rated) • 150°C operating temperature • Avalanche rated • dv/dt rated |
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bso211psis00070q67042-s4064 | |
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Contextual Info: BSO211P H OptiMOS P-Power-Transistor Product Summary Features VDS • dual P-Channel in SO8 • Qualified according JEDEC for target applications • 150°C operating temperature RDS on ,max -20 V VGS=4.5 V 67 mW VGS=2.5 V 110 ID -4.6 A • Super Logic Level (2.5V rated) |
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bso211piec61249-2-21 | |
igbt welding machine scheme
Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3
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igbt welding machine schemeikw40n120h3aircon l1smd diode schottky code marking sj+6 | |
3bs02
Abstract: 2bs01 08P06P TDA 16888 ICE2pcs02 tda16846 ICE3B1565J mosfet 18p06p TDA4605 ICE3B0365J
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infineo866-95b152-h8926-g2-x-7600nb08-10693bs02+9 | |
IRF1830G
Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
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ao4405ao4407ao4408ao4409+16 | |
PX3544
Abstract: PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J
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lead519b152-h9345-g2-x-7600px3544px7510+8 | |
600V igbt dc to dc buck converter
Abstract: TRANSISTOR SMD CODE PACKAGE SOT89 bts 2140 1b data sheet TRANSISTOR SMD CODE PACKAGE SOT23 PSB 6970 HL V1.3 PEF 24628 E V1.2-G infineon psb 6970 PEF 4265 T V2.1 HT 1200-4 SLB 9635
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b192-h6780-g11-x-7600sp000008186vdsl6100i-e600v igbt dc to dc buck converter+9 | |
ICE3B0365J
Abstract: ICE3BR4765J TDA16888 ICE2A765P2 ICE2PCS01G ICE1PCS02G ICE2B0565 ICE1PCS02 ICE2pcs02 IPI60R099CP
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spp21n50c3spa21n50c3spi21n50c3spp16n50c3+16 | |
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sso8 package
Abstract: MOSFET P SOT-23 BUZ350 BS0615NV BUZ345 SOT323 MOSFET P tda 2850 n-channel 250V power mosfet smd buz341 BSS138N
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b152-h8203-x-x-7600sso8 packagemosfet p sot-23buz350+7 | |