BSM10GD Search Results

Contextual Info: BSM10GD100D Transistors Three-Phase Bridge IGBT Power Module Isolated Case Y/N Circuits Per Package1 V(BR)CES (V)1.0k V(BR)GES (V) I(C) Max. (A)10 Absolute Max. Power Diss. (W)50 Minimum Operating Temp (øC) Maximum Operating Temp (øC) Thermal Resistance Junc-Case2.5

FSQ510 Equivalent

Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178

BSM10GD100

Abstract: BSM10GD100D
Contextual Info: SIEMENS IGBT Module BSM 10 GD 100 D Preliminary Data VCE = 1000 V / c = 6 x 1 1 A at Tc = 25 "C / c = 6 x 1 0 A at r c = 40 C • Power module • 3-phase full bridge • Including fast free-wheel diodes • Package with insulated metal base plate • Package outlines/Circuit diagram: 6a1

BSM10GD100D

Abstract: BSM10GD100 siemens igbt btb 148 600 GGM5 transient Diode bge
Contextual Info: bO E D • ÔE3SLiQS G G M 5 7 Ö 4 SIEMENS ^ 7 SIEMENS «SIEG AKTIENGESELLSCHAF BSM 10 GD 100 D IGBT Module Preliminary Data V CE = 1000 V I c = 6 x 11 A at T c = 25 C / c = 6 x 1 0 A a t 7'c = 40 C • • • • • Power m odule 3-phase full bridge Including fast free-wheel diodes

bsm10gd100dn1

Abstract: BSM10GD100DN BTS 302 BSM10GD100 E6327 BUZ 324 E6288 eTS 410 siemens bsm 101 AR C67076-A2505-A52
Contextual Info: SIEMENS Typ/Bestellnummern Type/Ordering Codes Ordering code Type BRT 11 H C67079-A1000-A6 BSM 50 GAL 100 D C67076-A2002-A2 BRT 11 H Option 7 C67079-A1040-A11 BSM 50 GAL 120 D C67076-A2010-A2 BRT 11 H Option 1 + 7 C67079-A1040-A17 BSM 50 GB 100 D C67076-A2100-A2

thyristor Q 720 To220

Abstract: siemens bsm200ga120dn2 bup transistor BSM50GD120DN2 BSM15GD siemens igbt BSM100GB120DN2 BSM30GD60DN2 BSM25GD120DN2 BSM20GD60DN2
Contextual Info: APPLICATIONS POWER SEMICONDUCTORS Andreas Bachofner ● Mario Feldvoss ● Sven Konrad ● Thomas Laska Second-generation IGBTs: The mighty midgets Contemporary power electronics applications call for smaller, lighter and more rugged components. They must also consume less energy, have a wider dynamic

FS20R06XE3

Abstract: aeg powerblock tt bsm25gp120 b2 thyristor aeg aeg powerblock tt 32 n STR W 6856 DATA SHEET HIGH VOLTAGE ISOLATION DZ 2101 FS450R12KE3 S1 MR 4710 IC aeg powerblock dd
Contextual Info: Power Semiconductors » Short Form Catalog » 2004 A Wide Range In Short Words. An Infineon Technologies Company go to content go to content eupec eupec European Power Semiconductors and Electronics Company – is situated in Warstein and is one of the world’s leading manufacturers of Power Semiconductors

BSM20GP60

Abstract: BSM10GD60DL BSM15GD BSM150GB60DN2 BSM10GP60 BSM15GP60 BSM30GP60 BSM50GD60DN2 BSM150GD60DN2 BSM400GB60DN2
Contextual Info: European Power Semiconducctor and Electronics Company GmbH + Co. KG 600V IGBT modules reach new levels of efficiency for power electronics applications. By Andreas Karl, 1998 Existing and newly evolving markets and applications for power electronics are challenging electronics manufacturers

bsm25gp120 b2

Abstract: FF300R12KE3 BSM50GD120DN2E3226 FZ1600R12KF4 FZ1200R16KF4 FF400R33KF2 BSM100GB60DLC BSM50GD60DLC FZ600R12KE3S FF600R12KE3
Contextual Info: IGBT High Power Modules 1200 VCES 1200 VCES Type * Dual modules IH1/4 IH7 Single modules Standard 2. Generation FF400R12KF4 FF600R12KF4 FF800R12KF4 Low Loss 2. Generation FF400R12KL4C FF600R12KL4C FF800R12KL4C IGBT3 ◆ FF600R12KE3 ◆ FF800R12KE3 ◆ FF1200R12KE3

bsm150gd120dn2

Abstract: bsm200gd120dn2 ECONOPACK BSM20GD60DN2 BSM30GD60DN2 BSM25GD120DN2 BSM100GD120DN2 BSM50GD120DN2 BSM10GD120DN2 BSM10GD60DN2
Contextual Info: APPLICATIONS POWER SEMICONDUCTORS Mario Feldvoss ● Andreas Karl IGBT modules of the second generation: Econopacks shrink frequency converters Siemens has developed technically superior, but low-cost packages for second-generation IGBTs in the power range from

FS450R12KE3 S1

Abstract: infineon pmb 6850 e bsm25gp120 b2 HIGH VOLTAGE ISOLATION DZ 2101 infineon pmb 6850 Thyristor eupec POWERBLOCK 2SD 1460 pmb 6850 V61-14 BSM35GP120
Contextual Info: Power Semiconductors Shortform Catalog 2003 An Infineon Technologies Company go to content eupec eupec Inc. headquartered in Lebanon, New Jersey, provides a wide array of innovative semiconductor products, includinge IGBT high power and standard modules, thyristors and diodes.

BSM25GP120 b2

Abstract: BSM15GP120 b2 BSM50GD120DN2E3226 FS10R06VL4_B2 BSM35GP120 F4-150R12KS4 FS10R06VL4 BSM30GD60DLCE3224 FZ1200R16KF4 BSM15GD120DN2E3224
Contextual Info: kuka-2003-inhalt.qxd 17.04.2003 10:33 Uhr Seite 7 EasyPIM 600 V-1200 V Type VCES V Low Loss 2. Generation ◆ FB6R06VL4 ◆ FB10R06VL4 FB10R06KL4 FB10R06KL4G FB10R06KL4G_B1 FP10R06KL4 FP10R06KL4_B3 FB15R06KL4 FB15R06KL4_B1 FP15R06KL4 FB20R06KL4 FB20R06KL4_B1