BSH10 Search Results
BSH10 Datasheets (30)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| BSH-100-01-L-D-DP-EM2 | Samtec | Connectors, Interconnects - Rectangular Connectors - Arrays, Edge Type, Mezzanine (Board to Board) - .5MM DOUBLE ROW SOCKET ASSEMBLY | Original | 234.62KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSH101 | Philips Semiconductors | N-Channel Enhancement Mode MOS Transistor | Original | 652.92KB | 12 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSH101 | Philips Semiconductors | N-channel enhancement mode MOS transistor | Original | 99.24KB | 12 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSH102 | Philips Semiconductors | N-Channel Enhancement Mode MOS Transistor | Original | 77.02KB | 12 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSH102 | Philips Semiconductors | N-channel vertical D-MOS transistor | Original | 47.93KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSH103 | Philips Semiconductors | N-channel enhancement mode MOS transistor | Original | 77KB | 12 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSH103,215 | NXP Semiconductors | N-channel enhancement mode MOS transistor - Configuration: Single N-channel ; ID DC: 0.85 A; Qgd (typ): 0.67 nC; RDS(on): 400@4.5V500@2.5V mOhm; VDSmax: 30 V; Package: SOT23 (TO-236AB); Container: Tape reel smd | Original | 76.98KB | 12 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSH103,235 | NXP Semiconductors | N-channel enhancement mode MOS transistor - Configuration: Single N-channel ; ID DC: 0.85 A; Qgd (typ): 0.67 nC; RDS(on): 400@4.5V500@2.5V mOhm; VDSmax: 30 V; Package: SOT23 (TO-236AB); Container: Tape reel smd | Original | 76.98KB | 12 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSH103BKR | Nexperia | BSH103BK - 30 V, N-CHANNEL TRENC | Original | 290.12KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSH103T | Philips Semiconductors | Transistor Mosfet N-CH 30V 0.85A 3 pin SOT-23 T/R | Original | 77KB | 12 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSH103/T3 | Philips Semiconductors | Transistor Mosfet N-CH 30V 0.85A 3 pin SOT-23 T/R | Original | 77KB | 12 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSH103T3 | Philips Semiconductors | N-channel enhancement mode MOS transistor | Original | 76.99KB | 12 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSH103T/R | Philips Semiconductors | Transistor Mosfet N-CH 30V 0.85A 3 pin SOT-23 T/R | Original | 77KB | 12 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSH104 | Philips Semiconductors | N-channel enhancement mode MOS transistor | Original | 49.61KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSH105 | General Semiconductor | MOSFET, Enhancement Mode, N Channel, SOT-23, 3-Pin | Original | 50.73KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSH105 | Philips Semiconductors | N-channel enhancement mode MOS transistor | Original | 148.86KB | 7 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSH105,215 | NXP Semiconductors | N-channel enhancement mode MOS transistor - Configuration: Single N-channel ; ID DC: 1.05 A; Qgd (typ): 1.4 nC; RDS(on): 200@4.5V250@2.5V mOhm; VDSmax: 20 V; Package: SOT23 (TO-236AB); Container: Tape reel smd | Original | 109.77KB | 7 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSH105,235 | NXP Semiconductors | N-channel enhancement mode MOS transistor - Configuration: Single N-channel ; ID DC: 1.05 A; Qgd (typ): 1.4 nC; RDS(on): 200@4.5V250@2.5V mOhm; VDSmax: 20 V; Package: SOT23 (TO-236AB); Container: Tape reel smd | Original | 109.77KB | 7 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSH105T | Philips Semiconductors | Transistor Mosfet N-CH 20V 1.05A 3 pin SOT-23 T/R | Original | 109.78KB | 7 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSH105T/R | Philips Semiconductors | Transistor Mosfet N-CH 20V 1.05A 3 pin SOT-23 T/R | Original | 109.78KB | 7 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSH10 Price and Stock
Samtec Inc BSH-100-01-L-D-DP-EM20.50 mm Basic Blade & Beam Socket Strip |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BSH-100-01-L-D-DP-EM2 |
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BSH-100-01-L-D-DP-EM2 |
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Panduit Corp BSH10-EHeat Shrink Butt Splice 12 – 10 AWG wire range. |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BSH10-E |
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BSH10-E | Bag | 14 Weeks | 100 |
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BSH10-E | Bulk | 4 | 1 |
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BSH10-E | Package | 70 | 3 Weeks | 1 |
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| BSH10-E | Bulk | 56 | 25 Weeks | 1 |
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BSH10-E |
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BSH10-E | 3 |
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BSH10-E | 9 |
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BSH10-E | 100 |
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TE Connectivity DUL-IBSH1055Dul-Ibsh1055 |Energydivision Te Connectivity DUL-IBSH1055 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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DUL-IBSH1055 |
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Nexperia BSH105,215Power MOSFET, N Channel, 20 V, 1.05 A, 200 mOhm, SOT-23, 3 Pins, Surface Mount - Tape and Reel (Alt: BSH105,215) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BSH105,215 | Tape & Reel | 53 Weeks, 1 Days | 3,000 |
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BSH105,215 | Tape & Reel | 3,000 |
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| BSH105,215 | Tape & Reel | 100 |
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| BSH105,215 | Cut Tape | 5 |
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BSH105,215 | 1 |
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BSH105,215 | 30 Weeks | 12,000 |
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BSH105,215 | 81 Weeks | 3,000 |
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Nexperia BSH108,215- Tape and Reel (Alt: BSH108,215) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BSH108,215 | Tape & Reel | 53 Weeks, 1 Days | 3,000 |
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BSH108,215 | Tape & Reel | 3,000 |
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| BSH108,215 | Cut Tape | 5 |
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| BSH108,215 | Tape & Reel | 100 |
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BSH108,215 | 1 |
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BSH108,215 | 30 Weeks | 12,000 |
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BSH108,215 | 81 Weeks | 3,000 |
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BSH10 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
BP317
Abstract: BSH104 pc 817 smd
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Original |
m3d088bsh104sc13bsca56+3 | |
BSH105
Abstract: SC18
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Original |
bsh105sc18 | |
BSH101Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BSH101 N-channel enhancement mode MOS transistor Preliminary specification File under Discrete Semiconductors, SC13b 1997 Jun 19 Philips Semiconductors Preliminary specification N-channel enhancement mode MOS transistor BSH101 |
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bsh101sc13bmam273sca54+1 | |
BSH103 MARKING
Abstract: TRANSISTOR SMD MARKING CODE DK BSH103 TRANSISTOR SMD CODE 339 marking code UL SMD Transistor 339 marking code SMD transistor MBK504 smd transistor 547 transistor smd .PB 8 transistor smd PB 8
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m3d088bsh103sc13bmam273+9 | |
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Contextual Info: Philips Semiconductors Objective specification N-channel enhancement mode MOS transistor BSH107 PINNING FEATURES • High-speed switching PIN SYMBOL • No secondary breakdown 1 d drain • Direct interface to C-MOS, TTL, etc. 2 d drain • Very low threshold. |
OCR Scan |
bsh107ot457 | |
BSH101Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage M3D088 BSH101 N-channel enhancement mode MOS transistor Product speciÞcation Supersedes data of 1997 Nov 28 File under Discrete Semiconductors, SC13b 2000 Jul 19 Philips Semiconductors Product specification |
Original |
m3d088bsh101sc13bsca56+1 | |
BSH108
Abstract: 03ab10 MSB003 transistor 8722
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Original |
bsh108m3d08803ab10msb003+1 | |
BSH103
Abstract: MBK504
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Original |
m3d088bsh103sc13bsca57+2 | |
BSH103Contextual Info: DISCRETE SEMICONDUCTORS DAT andbook, halfpage M3D088 BSH103 N-channel enhancement mode MOS transistor Product specification Supersedes data of 1998 Jan 30 File under Discrete Semiconductors, SC13b 1998 Feb 11 Philips Semiconductors Product specification N-channel enhancement mode |
Original |
m3d088bsh103sc13bsca57+1 | |
MOSFET SOT-23 marking code 122Contextual Info: < X>G e n e r a l v BSH105 S e m ic o n d u c t o r % N-Channel Enhancement-Mode MOSFET Vds 2 0 V Rds(ON 0.25Q Id 1.05A TO-236AB (SOT-23) •122(3.1) 0.031 (0.8) .110 2.8 .01 3(C -4) Hh Top View T -^p- 0.035(0.9) u? in o Pin Configuration 1. Gate 2. Source |
OCR Scan |
bsh105o-236abot-2300a/jus+1 | |
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Contextual Info: BSH108 N-channel enhancement mode field-effect transistor Rev. 01 — 06 September 2000 Product specification M3D088 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: |
Original |
bsh108m3d088msb003mbb076 | |
2092 tsop6
Abstract: BSH107 SOT457 N-Channel
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Original |
m3d302bsh107sc13bot457+4 | |
js sot23
Abstract: BSH102 MGH-20
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m3d088bsh102sc13bsca56+3 | |
Siliconix
Abstract: Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent
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Original |
2n70002n70022n7002e2n7002k+15 | |
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Contextual Info: Philips Semiconductors Product specification N-channel enhancement mode MOS transistor FEATURES BSH106 QUICK REFERENCE DATA SYMBOL d • Very low threshold voltage • Fast switching • Logic level compatible • Subminiature surface mount package V qs = 20 V |
OCR Scan |
bsh106ot363 | |
ld smd transistor LD 33
Abstract: BSH105N
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OCR Scan |
bsh105ld smd transistor ld 33bsh105n | |
BSH101Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage M3D088 BSH101 N-channel enhancement mode MOS transistor Product specification Supersedes data of 1997 June 19 File under Discrete Semiconductors, SC13b 1997 Nov 28 Philips Semiconductors Product specification |
Original |
m3d088bsh101sc13bsca56+1 | |
TRANSISTOR SMD MARKING CODE 42
Abstract: TRANSISTOR SMD MARKING CODE 45 TRANSISTOR SMD MARKING CODE UA TRANSISTOR SMD CODE PACKAGE SOT363 transistor smd code marking nc TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE 152 smd transistor catalog SMD Transistor Marking Code 71
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bsh106ot363transistor smd marking code 42transistor smd marking code 45+7 | |
SOT457 N-Channel FDContextual Info: Philips Semiconductors Product specification N-channel enhancement mode MOS transistor FEATURES BSH107 QUICK REFERENCE DATA SYMBOL d • Very low threshold voltage • Fast switching • Logic level compatible • Subminiature surface mount package V qs = 20 V |
OCR Scan |
bsh107ot457sot457 n-channel fd | |
transistor ph 45Contextual Info: DISC RETE S E M IC O N D U C TO R S [n]EE¥ BSH105 N-channel enhancement mode MOS transistor 1998 Mar 31 Preliminary specification Supersedes data of 1997 Jun 20 File under Discrete Semiconductors, SC13 Philips Semiconductors PHILIPS PHILIPS P h ilip s S e m ic o n d u c t o r s |
OCR Scan |
bsh105135108/00/02/pp8transistor ph 45 | |
BSH107
Abstract: SC18 SOT457 N-Channel
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Original |
bsh107ot457sc18sot457 n-channel | |
BSH105
Abstract: BSH106
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Original |
bsh106ot363bsh105 | |
MARKING CODE B05
Abstract: MOSFET N-Channel 1a vgs 0.9 sot-23
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Original |
bsh105o-236abot-2310-dec-01+2 | |
03ab10Contextual Info: BSH108 N-channel enhancement mode field-effect transistor Rev. 02 — 25 October 2000 Product specification M3D088 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: |
Original |
bsh108m3d08803ab10 | |