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    BSC200P03LS G Search Results

    BSC200P03LS G Datasheets (2)

    Infineon Technologies
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    BSC200P03LS G
    		Infineon Technologies P-Channel MOSFETs; Package: PG-TDSON-8; Package: SuperSO8; VDS (max): -30.0 V; RDS (on) (max) (@10V): 20.0 mOhm; RDS (on) (max) (@4.5V): -; RDS (on) (max) (@2.5V): -; Original PDF 304.58KB 9
    BSC200P03LSGAUMA1
    		Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 30V 12.5A TDSON-8 Original PDF 440.7KB
    SF Impression Pixel

    BSC200P03LS G Price and Stock

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    Rochester Electronics LLC BSC200P03LSG

    P-CHANNEL POWER MOSFET
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    DigiKey BSC200P03LSG Bulk 13,641 472
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    Infineon Technologies AG BSC200P03LSGAUMA1

    MOSFET P-CH 30V 9.9/12.5A 8TDSON
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    DigiKey BSC200P03LSGAUMA1 Tape & Reel
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    Vyrian BSC200P03LSGAUMA1 7,048
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    Infineon Technologies AG BSC200P03LS G

    Trans MOSFET P-CH 30V 9.9A Automotive 8-Pin TDSON EP T/R
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    Verical BSC200P03LS G 8,671 656
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    Infineon Technologies AG BSC200P03LSG

    Power Field-Effect Transistor, 9.9A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
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    Rochester Electronics BSC200P03LSG 13,641 1
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    BSC200P03LS G Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: BSC200P03LS G OptiMOS -P Power-Transistor Product Summary Features • P-Channel • Enhancement mode VDS -30 V RDS on ,max 20 mW ID -12.5 A • Logic level • 150°C operating temperature • Avalanche rated PG-TDSON-8 • Vgs=25V, specially suited for notebook applications


    Original     		BSC200P03LS IEC61249-2-21 200P03LS PDF