200P03LS Search Results
200P03LS Price and Stock
Infineon Technologies AG BSC200P03LSGMOSFET P-Channel 30V 9.9A (Ta), 12.5A (Tc) 8-SON |
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BSC200P03LSG | 13,641 | 1 |
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Infineon Technologies AG BSC200P03LSGAUMA1Power Field-Effect Transistor, 9.9A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BSC200P03LSGAUMA1 | 7,084 |
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200P03LS Datasheets Context Search
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BSC200P03LS GContextual Info: 200P03LS G OptiMOS -P Power-Transistor TM Product Summary Features • P-Channel • Enhancement mode V DS -30 V R DS on ,max 20 mΩ ID -12.5 A • Logic level • 150°C operating temperature • Avalanche rated PG-TDSON-8 • Vgs=25V, specially suited for notebook applications |
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Contextual Info: 200P03LS G OptiMOS -P Power-Transistor Product Summary Features • P-Channel • Enhancement mode VDS -30 V RDS on ,max 20 mW ID -12.5 A • Logic level • 150°C operating temperature • Avalanche rated PG-TDSON-8 • Vgs=25V, specially suited for notebook applications |
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Contextual Info: 200P03LS G OptiMOS -P Power-Transistor Product Summary Features • P-Channel • Enhancement mode VDS -30 V RDS on ,max 20 mW -12.5 ID A • Logic level • 150°C operating temperature • Avalanche rated PG-TDSON-8 • Vgs=25V, specially suited for notebook applications |
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bsc200p03lsiec61249-2-21200p03lsjesd22-a114-hbm+1 | |
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Abstract: BSC200P03LS G
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Contextual Info: 200P03LS G OptiMOS -P Power-Transistor Product Summary Features • P-Channel • Enhancement mode V DS -30 V R DS on ,max 20 mΩ ID -12.5 A • Logic level • 150°C operating temperature • Avalanche rated PG-TDSON-8 • Vgs=25V, specially suited for notebook applications |
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bsc200p03ls200p03ls | |
D125 tf
Abstract: 200P03LS
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bsc200p03ls200p03lsd125 tf |