BS170 AN Search Results

transistor BS170

Abstract: BS170 BS170 PHILIPS Philips RDS business BP317 MBB692 BS170 application note philips bs170
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BS170 N-channel vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification N-channel vertical D-MOS transistor BS170 QUICK REFERENCE DATA

BS170 MOTOROLA

Abstract: us602 equivalent of BS170 us-602 BS170 FET small signal transistors motorola
Contextual Info: MOTOROLA Order this document by BS170/D SEMICONDUCTOR TECHNICAL DATA TMOS FET Switching BS170 N–Channel — Enhancement 1 DRAIN 2 GATE  3 SOURCE MAXIMUM RATINGS 1 Rating Drain – Source Voltage Gate–Source Voltage — Continuous — Non–repetitive tp ≤ 50 µs

Siliconix

Abstract: Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent
Contextual Info: Analog Discrete Interface & Logic Optoelectronics MOSFET Small Package Cross Reference 2003 Across the board. Around the world. MOSFET Small Package Cross Reference Guide Competitor Part Number 2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123

BS170

Abstract: BS170 application note mosfet bs170 transistor MOSFET BS170 sot23 BS170 BS170 AN equivalent of BS170 transistor BS170 EQUIVALENT FOR bs170 MMBF170
Contextual Info: BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been

MMBF170

Abstract: BS170 application note BS170 CBVK741B019 F63TNR PN2222N BS170 - J35Z TO 92 BS170 bs170 TO-92
Contextual Info: April 1995 BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor General Description Features High density cell design for low RDS ON . These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high

mosfet bs170

Abstract: equivalent of BS170 EQUIVALENT FOR bs170 BS170 BS170 application note sot23 BS170 bs170 datasheet MMBF170 BS170 DATA SHEET GTO Driver
Contextual Info: BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor Features General Description These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been

MOSFET bs170

Abstract: BS170 CBVK741B019 F63TNR MMBF170 PN2222N BS170 AN bs170 TO-92 BS170 application note
Contextual Info: April 1995 BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor General Description Features High density cell design for low RDS ON . These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high

Contextual Info: BS170 VISHAY N-CHANNEL ENHANCEMENT MODE TRANSISTOR E M ir / I/uPOWEFTSEMICONDUCTOR Features • • • • High Input Impedance Fast Switching Speed CMOS Logic Compatible Input No Thermal Runaway or Secondary Breakdown A TO-92 Mechanical Data_

philips bs170

Contextual Info: Product specification Philips Semiconductors N-channel vertical D-MOS transistor BS170 FOR DETAILED INFORMATION SEE THE LATEST ISSUE OF HANDBOOK SC07 OR DATA SHEET N-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and intended fo r

bs170

Abstract: transistor MOSFET BS170 BS170 application note TRANSISTOR BS170
Contextual Info: BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been

mosfet bs170

Abstract: MMBF170 BS170 application note bs170 datasheet equivalent of BS170 BS170
Contextual Info: N April 1995 BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect transistors are produced using Nationals proprietary, high cell density, DMOS technology. These products have been designed to

fet n BS170

Contextual Info: WTELEDYNE COMPONENTS BS170 N-CHANNEL ENHANCEMENT-MODE DMOS POWER FET ABSOLUTE MAXIMUM RATINGS FEATURES • ■ ■ TC = +25°C unless otherwise specified Reliable, low cost, plastic package European TO-92 pin-out Low capacitance Drain-Source Voltage. 60V

MARKING bs170

Contextual Info: A pril 1995 National Semiconductor” BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor General Deccription Features These N-channel enhancement mode field effect transistors are produced using Nationals proprietary, high cell density, DMOS technology. These products

Contextual Info: BS170 DMOS Transistors N-Channel T O -92 _FEATURES High input impedance High-speed switching No minority carrier storage time CMOS logic compatible input No thermal runaway No secondary breakdown .098 ( 2 . 5 ) _ MECHANICAL DATA_

BS170

Abstract: MOSFET bs170 MMBF170 MMBF170 GATE-SOURCE transistor MOSFET BS170
Contextual Info: April 1995 BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor General Description Features High density cell design for low RDS ON . These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high

Contextual Info: BS170 N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and intended for use in relay, high-speed and line-transformer drivers. Features • Low ROSon• Direct interface to C-MOS, TTL, etc.

Contextual Info: BS170 J V_ FOR MORE DETAILED INFORMATION SEE LATEST ISSUE OF HANDBOOK SC07 OR DATA SHEET N-CHANNEL VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and intended for use in relay, high-speed and line-transformer drivers.

TO 92 BS170

Abstract: MMBF170 sot23 BS170 BS170 bs170 TO-92 equivalent of BS170 MMBF170 GATE-SOURCE BS170 n-channel MOSFET mosfet bs170 C1995
Contextual Info: BS170 MMBF170 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-channel enhancement mode field effect transistors are produced using National’s very high cell density third generation DMOS technology These products have been

transistor MOSFET BS170

Abstract: MOSFET BS170
Contextual Info: & N a t i o n al A pril 1995 Semiconductor" BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect transistors are produced using Nationals proprietary, high cell density, DMOS technology. These products

bs170

Abstract: TO 92 BS170
Contextual Info: BS170 Vishay Semiconductors formerly General Semiconductor DMOS Transistor N-Channel TO-226AA (TO-92) 0.142 (3.6) 0.181 (4.6) Features min. 0.492 (12.5) 0.181 (4.6) • • • • • • • High input impedance High-speed switching No minority carrier storage time

Contextual Info: BS170 _ FOR DETAILED INFORMATION SEE THE LATEST ISSUE OF HANDBOOK SC07 OR DATA SHEET N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in TO-92 variant enveloae and intended for use in relay, high-speed and line-transformer drivers.

bs170 replacement

Abstract: BC237 BC30 transistor K 2056
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Switching BS170 N–Channel — Enhancement 1 DRAIN  2 GATE 3 SOURCE MAXIMUM RATINGS 1 Rating Drain – Source Voltage Gate–Source Voltage — Continuous — Non–repetitive tp ≤ 50 µs Drain Current(1)

BS170

Abstract: BS170 application note BS170RL1 BS170RLRA BS170RLRM BS170RLRP BS170ZL1
Contextual Info: BS170 Preferred Device Small Signal MOSFET 500 mAmps, 60 Volts N–Channel TO–92 MAXIMUM RATINGS Rating http://onsemi.com Symbol Value Unit VDS 60 Vdc VGS VGSM ±20 ±40 Vdc Vpk Drain Current Note 1. ID 0.5 Adc Total Device Dissipation @ TA = 25°C PD

BS170

Contextual Info: BS170 DMOS Transistor N-Channel TO-226AA (TO-92) 0.142 (3.6) 0.181 (4.6) Features min. 0.492 (12.5) 0.181 (4.6) • • • • • • • max. ∅ 0.022 (0.55) High input impedance High-speed switching No minority carrier storage time CMOS logic compatible input