BS 3934 Search Results

SO42

Abstract: SKN 21 DB317 Semikron SKR 21 SKN4 V4-28 skn4508 SKN 170 semikron sk 240
Contextual Info: s e M IK R D n If r m s V rsm 80 A V rrm FAV sin. 180; 50 A (118 °C V $ Rectifier Diodes (maximum values for continuous operation) | 150 A & $ SKN 45 SKN 70 SKN 71 •) 95 A (100 °C) Teas — • - $ $ SKR 45 SKR 70 SKR 71 $ 200 SKN45/02 SKR45/02 SKN70/02 SKR70/02 SKN71/02* SKR71/02*

ZTX313

Abstract: BSV26 ZTX314 BSV27 ZTX312 2TX313 ferranti FERRANTI ELECTRONICS BSV25 ZTX310
Contextual Info: NPN Silicon Planar High Speed Switching Transistors DESCRIPTION These are plastic encapsulated transistors specifically designed for high speed sw itching applications and are also useful where very short storage times and low capacitance are required. The E-line package is formed by injection moulding a

SO42

Abstract: skn 220 semikron SKN 71 so 32 skn4508
Contextual Info: s e MIKRDN Rectifier Diodes Ifrm s m axim um values for continuous operation IV r s m 80 A V rrm I 150 A SKN 45 SKN 70 SKN 71 IfaV (sin. 1 8 0 ; Tease = • ■ ■) V 5 0 A (1 1 8 °C ) 9 5 A (1 0 0 ° C ) 200 SKN 45/02 SKR 45/02 SKN 70/02 SKR 70/02 SKN 71/02 SKR 71/02*

SKN45/06

Contextual Info: s e MIKRON Rectifier Diodes Ifrms maximum values for continuous operation 80 A | 150 A Vrsm Vrrm fav 50 A (118 °C) V $ $ SKN 45 SKN 70 SKN 71 (sin. 180; Tease = •• ■) 95 A (100 °C) $ $ $ SKR 45 SKR 70 SKR 71 200 SKN45/02 SKR45/02 SKN70/02 SKR70/02 SKN71/02* SKR71/02*

ZTX212

Abstract: ZTX213 ZTX214 so95 BC212 BS9365 SO-94 of transistors ztx21
Contextual Info: • PNP Silicon Planar General Purpose Transistors 3 5 1 - q i P h D ES C R IP T IO N These are plastic encapsulated general purpose tra n sisto rs designed for sm all and medium signal am plificatio ns from d.c. to radio frequencies. A pplication areas include : Audio

AM 22A 1043

Abstract: i6b3 i2Ap J403 MINI CKTS cr 6224 T 5566-NB6S
Contextual Info: 10 LO C\J 8 6 4 2 2 6 2 8 4 8 6 4 B 8 6 4 2 A 5 i_i T j e □ 0 0 0 6 7 0 I_I □ 0 0 0 0 0 0 0 r ii h 12 0 83 enÌ i_i 1 is is 0 0 0 0 0 0 0 0 0 am I_I 2 0 3 4H 22 1 OU 000000 0 0 0 0 0 0 2m *000000000000 B 0 0 0 0 0 0 0000000 000000000000 2m 1

BCY69

Abstract: 2t80 GQ017
Contextual Info: ZETEX SEMICONDUCTORS 32C D H ^70570 GQ017S7 3 2 C 0 1757 D ! 2 ~ ~ T ~ Z 7 -ô L_ NPN G EN ER A L PU R P O S E - Continued Type Vc b Max VCEO lc V V mA Max VcE sat at V hFE lc mA Ib mA M in fj at at Ptat a* *l"amb Package =25°C Min Max lc lc mA MHz mA mW

BS3934

Abstract: SO-12A
Contextual Info: ZETEX SEMICONDUCTORS 1 35C m e}C,7D570 DDDJ* 32C 01 760 c ~ T35"-o / NPN SW ITCHIN G - continued Type Max v CEO 'c mA V hFE Max VcE sat at V at •c mA >B mA Mm Max lc mA fx Min at Switching Times (Max) at *on ns toff ns 'c mA Package Comple­ ment MHz lc

D2BS

Contextual Info: S E M IK R D N V rsm V rrm If a v 200 5A SKN 5/02 - 400 SKN 2,5/04 SKN 5/04 800 SKN 2,5/08 SKN 5/08 1200 SKN 2,5/12 SKN 5/12 1600 SKN 2,5/16 SKN 5/16 SKN 2,5 Symbol Conditions T Vj = 2 5 °C = = = 1 8 0 °C T Vj i2t T vj Tvj Vf V TO rr 2 ,5 120 2 ,4 10 ms

Contextual Info: 5 bE ]> • cH 7 05 7 fl G00LiT3b ATM ■ Z E T B ZETEX SEMICONDUCTORS Max VCE sat| t ^BLE Max •c V mA M PS2907A 60 600 BCY77P 60 100 0.25 10 0.25 120 460 2 180* 10 85 150 10 BCY65EP BCY79P 45 200 0.25 10 0.25 120 460 2 180* 10 85 150 10 BCY59P 2N4403 40

Contextual Info: SbE ]> • TT7057Ô 0DDbT37 730 « Z E T B ZETEX TABLE 5 : NPN LOW NOISE SEMI CONDUCTORS The transistors in this table are characterised for low noise, low level amplification and are ideally suited for audio pre-amplifiers as well as universal applications.

Ferranti

Abstract: FERRANTI ELECTRIC mps a14 MPS-A13 mps a12 zo 107 NA 9374 FERRANTI ELECTRONICS MPS 624 MPS-A12
Contextual Info: DESCRIPTION These N P N s ilic o n d a r lin g to n a m p l if i e r t ra n s is to rs o f f e r high g ain and in p u t im p e d a n c e f o r p r e - a m p l if ie r in p u t a p p lic a tio n s . T h e E -lin e p a c k a g e is f o r m e d by in je c tio n m o u ld in g a

Contextual Info: 5bE ]> • TTTGSTfl DGDb^fl b? M Z E T B TABLE 6 : PNP LOW NOISE ZETEX SEMICONDUCTORS The transistors in this table are characterised level cterised for low noise, low le v e l;amplification and are ideally suited for audio pre-amplifiers as well as universal applications.

nas 624

Abstract: NAS 6204 ags 904 5566-24B
Contextual Info: 4 10 5 I .6 47 .4 43 .2 39 34 .8 30 .6 26 .4 22 .2 I8 I3 .8 9 .6 5 .4 46 .2 42 37 .8 33 .6 29 .4 25 .2 2I I6 .8 I2 .6 8 .4 4 .2 DIM. B DIM. A 24 22 20 I8 I6 I4 I2 IO 8 6 4 2 — m I S E II S E ^ I 2 fË'jj'ïï' isjhë m LJ LJ LJ 6 CKTS. 6 CKTS. IS CKTS.

2TX650

Abstract: zetex transistors TO92 BF493 ZTX458 ZTX558 ZTX758 BF392 BF393 MPSA92 ZTX658
Contextual Info: SbE » • ^70570 DGDb^M2 GTfl H Z E T B T -'Z /l-O l TABLE 13 : NPIU/PNP HIGH VOLTAGE TRANSISTORS The transistors shown in this table are designed for driving numerical indicator tubes, neon lamps and other applications requiring high voltage capability.

CD 9088

Abstract: AGS-210-TA 5566-02AGS-TA SD-5566-002 5566-N SD-5566-N 39-53-9249 cr 6224 T 5566-02A iobpb-2
Contextual Info: 10 5 1.6 47 .4 4 3 .2 39 34 .8 30 .6 26 .4 22 .2 I8 I3 .8 9 .6 5 .4 46 .2 42 37 .8 33 .6 29 .4 25 .2 2I I6 .8 I2 .6 8 .4 4 .2 — 24 22 20 I8 I6 I4 I2 IO 8 6 4 2 DIM. B DIM. A CKT. SIZE 3 I i \ W \ — a — I 2 [ S Ü 3 ^ Tijfr irjfirj Tîijhë nrlnrl -a -

to74

Abstract: TAA530 220bfy
Contextual Info: TAA530 QUAD M.O.S.T. Quadruple p-channel oxide silicon transistors (Dev. No. 220BFY) 7 DEVELOPM ENT SAM PLE DATA T h is m onolithic integrated c irc u it co m p rises four m atched P -c h a n n e l, enhancement type, insulated gate field effect tra n s is to rs . T h is device is

fu 9024

Abstract: bu 5027 yt 5188 FU 9024 N 5566-02AS-210 20A400 086s MOLEX mxj a2 5566 molex 5566-02A
Contextual Info: 10 I IY IZ I 5 47 43 39 34 30 26 22 8 3 9 5 6 4 2 8 6 4 2 8 6 4 DIM B 46 42 37 33 29 25 2 6 2 8 4 2 n 7 7] 0 5 -iJ 24 22 20 8 6 4 2 IO 8 6 4 2 8 6 4 2 8 6 4 2 DIM A 0 0 0 0 n 0 7 0 0 6 T0 00000 00000 00000000 10 CKTS. I6 CKTS. CKTS. 000000 000000 0 0 7 F ii 5 7 7 »IM

2TX650

Abstract: zetex ZTX360 2N39045 2N4125 TRANISTOR 2N4400 2N4401 2N4402 2N4403 BCY59P BCY65EP
Contextual Info: SbE D • ^ c]7QS7fl GOGt.'igS Tbfl « Z E T B TABLE 3 : NPN SWITCHING T -3 5 - s / M a x V CE sat| T yp e V CEO V M ax 'c mA M in f-i- M ax. S w itch in g T im es at at at 'c mA •b M in M ax 'c 'c 'on mA m A M H z m A ns at C om plem ent V toff ns lc mA

LT 9228

Abstract: lt 6228 tny 604 lt 6224 CD 9088 5566-06a st 6062 5566-NA-GR mxj 2 connector tin 606
Contextual Info: 10 5 1.6 47 .4 4 3 .2 39 34 .8 30 .6 26 .4 22 .2 I8 I3 .8 9 .6 5 .4 46 .2 42 37 .8 33 .6 29 .4 25 .2 2I I6 .8 I2 .6 8 .4 4 .2 — 24 22 20 I8 I6 I4 I2 IO 8 6 4 2 DIM. B DIM. A CKT. SIZE 3 I i \ W \ — a — I 2 [ S Ü 3 ^ Tijfr irjfirj Tîijhë nrlnrl -a -

Contextual Info: SEMIKRON INC 3bE D • fll3bh71 OOGStiST 2 « S E K G SEMIKRON Ifrm s maximum values fo r continuous operation V rsm 5A V rrm | I f a v (sin. 10A SKN 2,5 SKN 5 180;Tamb = 45 °C) V 2,5 A 5A 200 400 800 1200 1600 SKN 2,5/02 SKN 2,5/04 SKN 2,5/08 SKN 5/02

SKT10/04C

Contextual Info: _J1E I> • fll3bti71 G0034bfci MAT S E rîIK R 0 iT i n c ' V rsm V rrm V drm *L Itrms (maximum values for continuous operation) 30 A Vdt/or | 40 A | 50 A ItAV (sin. 180; Tease = . ,°C) V V V/|1S 500 700 400 600 900 800 200 200 500 200 500 500 200 500

Contextual Info: s e MIKRGN Ifr m s V rsm V rrm Ifa v V sin. 180; Tam b 5A SKN 5/02 - 400 SKN 2,5/04 SKN 5/04 800 SKN 2,5/08 SKN 5/08 1200 SKN 2,5/12 SKN 5/12 1600 SKN 2,5/16 SKN 5/16 Symbol Conditions 45 °C; sin. 180 rec. 120 I fav Tamb = I fsm Tvj = Tvj = i2t T Vj = Tvj =

RGM22S

Abstract: RGP22S melservo renishaw interface mitsubishi rs422 Renishaw RGH22 RGH26Q rgh22 RGH26P Renishaw
Contextual Info: L-9517-9106-01-A RGH26 series - serial communications readhead system • Non-contact open optical system · Integral interpolation · Mitsubishi compatible serial communications · Maximum speed up to 6m/s · Resolutions from 5µm to 0.5µm · Integral reference and dual limit sensors