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    BRY 55 200 Search Results

    BRY 55 200 Datasheets (7)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    BRY55-200
    		Motorola SCRs 0.8 AMPERE RMS 30 TO 600 VOLTS Original PDF 89.53KB 4
    BRY55-200
    		Motorola European Master Selection Guide 1986 Scan PDF 24.05KB 1
    BRY55/200
    		Unknown Cross Reference Datasheet Scan PDF 38.12KB 1
    BRY55-200
    		Unknown Short Form Datasheet and Cross Reference Data Short Form PDF 158.64KB 1
    BRY55-200
    		Unknown Short Form Datasheet and Cross Reference Data Short Form PDF 86.47KB 1
    BRY55-200
    		Thomson-CSF Condensed Data Book 1977 Scan PDF 35.24KB 1
    BRY55-200
    		Thomson-CSF Shortform Semiconductor Catalogue 1982 Short Form PDF 81.1KB 1

    BRY 55 200 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    TY6008

    Abstract: TSM 4005 A 6005 F 6005 FAST SWITCHING THYRISTORS TY6008FA BRY 55 200 TY6005F BTX 25 800 TYF6008A 49400
    Contextual Info: fast switching thyristors < 100 Arms thyristors rapides < 100 Aeff T1H0MS0N-CSF Tamb - 25°C Type •o Vr r m ■ tsm 10 ms V d RNI A 0,8 A r m s / T c a S e = 2 5 ° C BRY BRY BRY BRY 55 55 55 55 S- 30 S- 60 S-100 S-200 0,52 5 A r m s / T ^ a se = 7 5 ° C


    OCR Scan     		s-100 s-200 wf139b TY6008 TSM 4005 A 6005 F 6005 FAST SWITCHING THYRISTORS TY6008FA BRY 55 200 TY6005F BTX 25 800 TYF6008A 49400 PDF

    BRY 300

    Abstract: BRY 100 BRY 55 200 BRY 55 A HS 817 VDR Siemens BRy55 siemens thyristors bry65 BRY 21
    Contextual Info: 2SC D • flSBSbQS QQQ47bR T ■ S I E 6 r . 1 C3L U t lO T a -fZ _ . 2 o -// Silicon Miniature Thyristors ~ BRY 55/30. - S I E M E N S A K T IE N G E S E L L S C H A F _BRY SS/3_00 These diffused silicon thyristors in TO 92 plastic package 10 A 3 DIN 41868} are


    OCR Scan     		QQQ47bR Q68000-A114-F10 Q68000-A183-F10 Q68000-A184-F10 Q68000-A520-F10 Q68000-A185-F10 50to400H2 126iC 623SbOS BRY 300 BRY 100 BRY 55 200 BRY 55 A HS 817 VDR Siemens BRy55 siemens thyristors bry65 BRY 21 PDF

    BSTB0246

    Abstract: BT100A BSTC0540 BSTB0226 bt 2328 BTW 600 BT106A BS9-04A 27-600R TAG106D
    Contextual Info: MANUFACTURERS T E C H N IC A L DATA SHOULD TAG nearest Equivalent Type TAG nearest Equivalent Type AA AA AA AA AA 107 108 109 110 111 2N 2N 2N 2N 2N BRX BRY BRY BRY BRY 66 54-100 54-200 54-300 54-400 BRX TAG TAG TAG TAG 66 611-100 611-200 611-300 611-400 AA


    OCR Scan     		55-500M 55-600M 55-700M 55-800M 2-800RU 92-1000RM 92-1000RU 16N-400DM 16N-400DU 16N-600DM BSTB0246 BT100A BSTC0540 BSTB0226 bt 2328 BTW 600 BT106A BS9-04A 27-600R TAG106D PDF

    scr tag 2 200

    Abstract: scr 106d 27-600R SCR bt 107 SCR BRX 49 BSTB0246 BTX30-200 scr 106B bt 151 600 scr bt 138
    Contextual Info: iTïïffi SCR IN METAL PACKAGE TO-39 •7 ? 1, 6 A RMS A r>M C IM M O h T A n DUC IM 'W 15V 2N2322 2N2322A BTX30- 50 2N2323 2N2323A BTX30-100 2N2324 2N2324A 2N2325 2N2325A 2N2326 2N2326A 2N2327 2N2327A 25V 50V 60V 100V 150V vDRM 200V V 250V RRM BLOCKING VOLTAGE


    OCR Scan     		2N2322 2N2322A BTX30- 2N2323 2N2323A BTX30-100 2N2324 2N2324A TAG611-100 TAG612-100 scr tag 2 200 scr 106d 27-600R SCR bt 107 SCR BRX 49 BSTB0246 BTX30-200 scr 106B bt 151 600 scr bt 138 PDF

    BRY 300

    Abstract: 2N thyristor tls 106-6 BRY55 TD6001S 2N877 2N878 2N879 2N880 BRY 55-200
    Contextual Info: o THOMSON-CSF sensitive gate thyristor selector guide guide de sélection thyristors sensibles 175 sensitive gate thyristors thyristors sensibles THOMSON-CSF dv/dt Tam b = 25°C Types •RM @ V r r m V r r m ■t s m ■d m @ V d r m V q t Tj max 10 ms ■o


    OCR Scan     		BRY55. BRY55M. tls107. CB-971 ICB-2741 BRY 300 2N thyristor tls 106-6 BRY55 TD6001S 2N877 2N878 2N879 2N880 BRY 55-200 PDF

    TRIAC TAG 280 600

    Abstract: TAG 6 600 BT100A 27-600R BSTB0246 TRIAC TAG 626 400 TRIAC TAG 92 TRIAC btw 92 triac TAG bstb0226
    Contextual Info: flffli] TR IA C IN METAL AND PLASTIC PACKAGE ^ y TC-220AB TO-66 o ij a r~\ n k ic in i i*j 12 A A RMS A NEW 30V 5 OV­ V k TAG TAB ! 1 DMC SALES TAG 240 IS O LA TED TYPE 241 P A D ESIG N ATIO N TAG 1Ç DMQ A PMC. FOR 245 TAG 246 IO 0V T A G 2 6 0 - 1 00 TAG261-100


    OCR Scan     		O-220AB TAG260-100 TAG261-100 TAG265-1 TAG266-1 TAG420-100 TAG425-100 TAG426-100 TAG260-200 TAG261-200 TRIAC TAG 280 600 TAG 6 600 BT100A 27-600R BSTB0246 TRIAC TAG 626 400 TRIAC TAG 92 TRIAC btw 92 triac TAG bstb0226 PDF

    scr 106d

    Abstract: SCR bt 107 27-600R C 106D scr scr tag 12 BS9-04A tag br 203 BT106A TAG 92 bstb0226
    Contextual Info: f l ✓ SCR IN METAL PACKAGE TO -3 9 T O - 18 0 ,6 A 15V 2N876 2N884 30V 2N877 2N 8 8 5 0 ,8 A RMS 2N3001 2N3005 TAG 0 ,8 A RMS 06Y BR 203 50V v v DRM RRM B L O C K IN G V O LT A G E 60V 2N878 2N886 2N3002 2N 3006 TAG 0 6 Y Y 100V 2N879 2N 887 2N 3 0 0 3 2N 3007


    OCR Scan     		to-18 2n876 2n884 2n877 2n885 2n3001 2n3005 2nw121 tag520f tag521f scr 106d SCR bt 107 27-600R C 106D scr scr tag 12 BS9-04A tag br 203 BT106A TAG 92 bstb0226 PDF

    bry46

    Abstract: thyristors BRY 300 TO64 package BRY 55 A TO-64 BRY 46 bry44 TO-64 weight TO64
    Contextual Info: Thyristors T h y ris to rs BRY Series in special lo w -lin e tab package for consumer applications. CRS 1 Series in TO -5 case. CRS 3 Series in TO -64 stud-m ounted case » M 5 Type M axim um Ratings C haracteristics at T j= 2 5 °C C ontinuous forw ard


    OCR Scan     		PDF

    BRY 300

    Abstract: BRY 55 A BRY 55 200 bry 55 2N883 BRY 100 2N877 2N878 TD5001 2N880
    Contextual Info: sensitive gate thyristors thyristors sensibles THOMSON-CSF dv/dt Tam b = 25°C Types •o ■RM @ V r r m d m @ Vd r m Vq t Vr r m ■ tsm ■ Tj max 10 ms V DRM A (V) 0,5 A rm s / Tease = 85°C 2N877 2N878 2N879 2N880 2N881 2N882 2N883 0,5 A im s / Tease = 75°C


    OCR Scan     		2N877 2N878 2N879 2N880 2N881 2N882 2N883 CB-971 ICB-2741 BRY 300 BRY 55 A BRY 55 200 bry 55 BRY 100 TD5001 PDF

    ESM 467 600

    Abstract: ESM 467 BRY 41 boitier to 126 ET 81 K kbh 2504 BRY 300
    Contextual Info: C B 175 CB 200 T O 46 X 55 CB 10 (CB 76) Single phase rectifier bridges Ponts de redressement monophase Type Case V RRM (V) B oîtie r •o (A) Toper (°C) l FSM (A) V F (2) / (V) Tcase 50 °C max tp 10 ms max T (vj) 25 °C max max 'F (A) D R T 76 ■r / v r r m


    OCR Scan     		CB175 ESM 467 600 ESM 467 BRY 41 boitier to 126 ET 81 K kbh 2504 BRY 300 PDF

    BRY21

    Abstract: BRY 21 thyristor igc
    Contextual Info: BRY21 PN PN-Thyristor P re lim in a ry d a ta BRY21 is an extinguishable PNPN silicon planar thyristor tetrode in a case 5 C 4 DIN 41873 TO -12 . The anode gate (GA) is electrically connected to the case. The thyristor tetrode BRY 21 is particularly designed for use as a switch of medium


    OCR Scan     		BRY21 BRY21 Q62702-R81 BRY 21 thyristor igc PDF

    SIEMENS THYRISTOR BRY 20

    Abstract: 7809A SIEMENS thyristor BRY 300 BRY20 SIEMENS FAST THYRISTOR
    Contextual Info: 55C D • fl23SbaS Q0047b3Jj M S I E 6 ' ! PNPN Thyristor Tetrode 25C 04763 D 1 _ BRY20 If '_ SIEMENS AKTIENGESELLSCHAF BRY 20 is an extinguishable PNPN silicon planar thyristortetrode in TO 12 case 5 C 4 DIN 41873 . The anode gate (Ga ) is electrically connected to the case. The BRY 20 is particularly


    OCR Scan     		fl23SbaS Q0047b3Jj BRY20 Q60217-Y20 100mA SIEMENS THYRISTOR BRY 20 7809A SIEMENS thyristor BRY 300 BRY20 SIEMENS FAST THYRISTOR PDF

    IC 4093 pin configuration

    Abstract: BRY 56 B IC 4093 MARKING 30 5Y SO2894 4392 4392 a ic BCV27 BFR30 BFR31
    Contextual Info: micropackaged devices m icroboitiers ^ général purpose and switching transistor selector guide THOMSON-CSF guide de sélection-transistors de com m utation et usage général Case TO'236 •c 0,5 . 0,8A 0,1 . 0,2A Type NPN PNP NPN PNP BCX 20 BCX 18 SO 2221


    OCR Scan     		O-236 IC 4093 pin configuration BRY 56 B IC 4093 MARKING 30 5Y SO2894 4392 4392 a ic BCV27 BFR30 BFR31 PDF

    BRY20

    Abstract: SIEMENS THYRISTOR SIEMENS THYRISTOR BRY 20 Q60217-Y20 200 hn PNPN SIEMENS FAST THYRISTOR
    Contextual Info: 55C D • fl23SbaS Q0047b3Jj M S I E 6 ' ! PNPN Thyristor Tetrode 25C 04763 D 1 _ BRY20 If '_ SIEMENS AKTIENGESELLSCHAF BRY 20 is an extinguishable PNPN silicon planar thyristortetrode in TO 12 case 5 C 4 DIN 41873 . The anode gate (Ga) is electrically connected to the case. The BRY 20 is particularly


    OCR Scan     		000H7b3 BRY20 Q60217-Y20 BRY20 SIEMENS THYRISTOR SIEMENS THYRISTOR BRY 20 Q60217-Y20 200 hn PNPN SIEMENS FAST THYRISTOR PDF

    BRY20

    Abstract: Thyristor 40V 120A L-13 Q60217-Y20 BRY 41
    Contextual Info: BRY20 PN PN-Thyristor The BRY 20 is an extinguishable silicon PNPN planar th yristo r-te tro d e in a case 5 C 4 DIN 41 873 T O -1 2 . The anode gate (G A) is electrically connected to the case. The BRY 20 is particularly suitable fo r use as a medium fast sw itch.


    OCR Scan     		BRY20 Q60217-Y20 10ltlA_ BRY20 Thyristor 40V 120A L-13 BRY 41 PDF

    BRY 300

    Abstract: 12T4S RSM 2322 k 471 a 2322 635 BRY 56 C 10T4S DRT76 TO-46-200 14T4S
    Contextual Info: CB 10 (CB 76) (CB 7) Low power SCRs — Normal series Thyristors de faible puissance — Séries normales Case Type 'T(rsm ) (A e ff) V r r m -V d r m (V) B oîtier 0,5 and 0,8 Aeff 0,5 et 0,8 A e ff Tease <°C) •t s m (A) Toper <°C) tp 10 ms m iri 'gt


    OCR Scan     		DRT76 10T4S 12T4S BRY 300 RSM 2322 k 471 a 2322 635 BRY 56 C TO-46-200 14T4S PDF

    B20S

    Abstract: 2SK1205
    Contextual Info: M4Tb2G5 QQ13253 G22 • H I T M 2SK1205 SILICON N-CHANNEL MOS F E T HIGH SPEED POWER SWITCHING 1. G*le 2. Drain Flange ■ FEATURES • Low On-Resistance • High Speed Switching • Low Drive Current 3. Source (Dimensions i, jl 0.6±02 • No Secondary Breakdown


    OCR Scan     		2SK1205 QQ13253 001323b K1205----------------------------HITACHI/ B20S 2SK1205 PDF

    PAL20V8

    Abstract: BRY 56 C MACHXL AMD pal20v8 DRAM controller EPX780 rick jd MACH210 BRY 56 B Intel AP-726
    Contextual Info: A AP-726 APPLICATION NOTE Interfacing the i960 Jx Microprocessor to the NEC µPD98401* Local ATM Segmentation and Reassembly SAR Chip Rick Harris SPG 80960 Applications Engineer Intel Corporation Semiconductor Products Group Mail Stop CH6-311 5000 W. Chandler Blvd.


    Original     		AP-726 PD98401* CH6-311 PAL20V8 BRY 56 C MACHXL AMD pal20v8 DRAM controller EPX780 rick jd MACH210 BRY 56 B Intel AP-726 PDF

    CY7BB991-7

    Abstract: B00J AMD pal20v8 INTEL AP-72 Intel AP-726
    Contextual Info: in tg l AP-726 APPLICATION NOTE Interfacing the i960 Jx Microprocessor to the NEC HPD98401* Local ATM Segmentation and Reassembly SAR Chip S e p te m b e r , 2 1 , 1 9 9 5 I Order Number: 272779-001 1-665 AP-726 Benefits of using the PCI-SDK include: This application note describes the interface between Intel's • The PCI-SDK plugs directly into a DOS-based


    OCR Scan     		AP-726 HPD98401* AP-726 nPD98401® CY7BB991-7 B00J AMD pal20v8 INTEL AP-72 Intel AP-726 PDF

    galvo

    Abstract: E12017 EL2017
    Contextual Info: EL20171EL2017C é t a n t e c HIGH PERFORMANCE ANALOG INTEGRATED CIRCUITS High Efficiency Precision Servo Controller General Description Features • Low Saturation Voltage • Precision Current Sense Amplifier • Efficient Class D Switch • linear Class B Hack


    OCR Scan     		EL20171EL2017C 20-Lead galvo E12017 EL2017 PDF

    wkp 4n7

    Abstract: WKO 4n7 M WYO 3n3 X1 WYO 5n M 250 WKO 4n7 WYO332CMKR WKP 3n3 M 440 250 CRZ 2005 wkp 4N7 k wyo 5n m
    Contextual Info: WYO Vishay Draloric Ceramic AC Capacitors Class X1, 440 VAC/Class Y2, 250 VAC DESIGN: D Max. Disc capacitors with epoxy coating S Max. 3 Max. X1 : (Y2): 250 VAC, 50 Hz (IEC 60384-14.2) 250 VAC, 60 Hz (UL1414, CSA C22.2) V ± 0.5 DIELECTRIC STRENGTH BETWEEN LEADS:


    Original     		UL1414, 09-Feb-06 wkp 4n7 WKO 4n7 M WYO 3n3 X1 WYO 5n M 250 WKO 4n7 WYO332CMKR WKP 3n3 M 440 250 CRZ 2005 wkp 4N7 k wyo 5n m PDF

    LDR 03

    Abstract: valvo halbleiter LDR -03 cny63 CNY62 BYX 71 800 CXY19 VALVO ldr 07 BZW10-12
    Contextual Info: Halbleiter­ bauelemente • 1981/82 N, Bauelemente l m für die gesamte i f Elektronik V A L V O Valvo bietet das breiteste Produktprogram m an Bauelementen für die gesamte Elektronik in Deutschland: Bildröhren A blenkteile Tuner Lautsprecher Transform atoren


    OCR Scan     		PDF

    ta 5732

    Abstract: CI 5512 5732
    Contextual Info: 4b7fll50 OOQÛÔOI h 2SE D I I STANLEY CO INC SîAM EÏ STANLEY SUPER BRIGHT LED LAMP 05 T-1 3 /4 T Y PE 5 5 0 2 ^ .5 5 1 3 | 5 5 2 2 | , 5 5 3 2 ^ 5 7 0 ^ 5 Z 1 ^ l 5 7 2 ^ 5 7 3 2 IS E L E C T IO N G U ID E COLOR M ATERIAL GaAIAs GaAsP Red • GaP -tm GaP


    OCR Scan     		4b7fll50 ta 5732 CI 5512 5732 PDF

    RPY 86

    Abstract: valvo halbleiter RPY94 CQY 24 BV EI 30-20 3001 LDR 03 diode byx 64 600 valvo transistoren KP101A BAV99-1
    Contextual Info: Elektronik. Wir bauen die Elemente. v a i v D Halbleiterbauelemente Produktprogramm DH, April 1984 Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die Mikroelektronik - entwickelt sich immer rascher zum Motor für eine Vielzahl von Innovationen. Mit gründ­


    OCR Scan     		PDF