BSTB0246
Abstract: BT100A BSTC0540 BSTB0226 bt 2328 BTW 600 BT106A BS9-04A 27-600R TAG106D
Contextual Info: MANUFACTURERS T E C H N IC A L DATA SHOULD TAG nearest Equivalent Type TAG nearest Equivalent Type AA AA AA AA AA 107 108 109 110 111 2N 2N 2N 2N 2N BRX BRY BRY BRY BRY 66 54-100 54-200 54-300 54-400 BRX TAG TAG TAG TAG 66 611-100 611-200 611-300 611-400 AA
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55-500m55-600m55-700m55-800m+162-800ru92-1000rm92-1000ru16n-400dm16n-400du16n-600dmbstb0246bt100abstc0540bstb0226bt 2328btw 600bt106abs9-04a27-600rtag106d
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TY6008
Abstract: TSM 4005 A 6005 F 6005 FAST SWITCHING THYRISTORS TY6008FA BRY 55 200 TY6005F BTX 25 800 TYF6008A 49400
Contextual Info: fast switching thyristors < 100 Arms thyristors rapides < 100 Aeff T1H0MS0N-CSF Tamb - 25°C Type •o Vr r m ■ tsm 10 ms V d RNI A 0,8 A r m s / T c a S e = 2 5 ° C BRY BRY BRY BRY 55 55 55 55 S- 30 S- 60 S-100 S-200 0,52 5 A r m s / T ^ a se = 7 5 ° C
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s-100s-200wf139bty6008+9tsm 4005 a6005 f6005 fast switching thyristorsty6008fabry 55 200ty6005fbtx 25 800tyf6008a49400
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transistor Siemens 14 S S 92
Abstract: 2sc 3150 transistor BRY 56 C Bry 56 BRY 66 A BRY 56 B
Contextual Info: ESC D • fl23StiQS 0004773 1 MS I E G , Programmable Unijunction Transistor BRY 56 7” ^ o f SIEMENS AKTIENGESELLSCHAF Programmable silicon planar unijunction transistor in TO 92 plastic package 10 A 3 DIN 41868 . K8max Type Ordering code BRY561» BRY 56 A
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fl23stiqsbry561q68000-a803q68000-a803-s1+12q68000-a803-s2q68000-a803-s323sbgs02bstaqsgg04777bry56transistor siemens 14 s s 922sc 3150 transistorbry 56 cbry 56bry 66 abry 56 b
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BRY 41
Abstract: BRY21 SIEMENS FAST THYRISTOR Tetrode pnpn
Contextual Info: ISIEG ESC D • Ö235b05 G0Q47b7 b PNPN Thyristor Tetrode BRY21 SIEMENS AKTIENGESELLSCHAF The BRY 21 is an extinguishable PNPN silicon planar thyristortetrode in T 0 12 case 5 C 4 DIN 41 873 . The anode gate (Ga ) is electrically connected to the case. The BRY 21 is particularly
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235b05g0q47b7bry21q62702-r81+3bry 41siemens fast thyristortetrode pnpn
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SIEMENS THYRISTOR BRY 20
Abstract: 7809A SIEMENS thyristor BRY 300 BRY20 SIEMENS FAST THYRISTOR
Contextual Info: 55C D • fl23SbaS Q0047b3Jj M S I E 6 ' ! PNPN Thyristor Tetrode 25C 04763 D 1 _ BRY20 If '_ SIEMENS AKTIENGESELLSCHAF BRY 20 is an extinguishable PNPN silicon planar thyristortetrode in TO 12 case 5 C 4 DIN 41873 . The anode gate (Ga ) is electrically connected to the case. The BRY 20 is particularly
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fl23sbasq0047b3jjbry20q60217-y20+6100masiemens thyristor bry 207809asiemens thyristorbry 300siemens fast thyristor
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BRY20
Abstract: SIEMENS THYRISTOR SIEMENS THYRISTOR BRY 20 Q60217-Y20 200 hn PNPN SIEMENS FAST THYRISTOR
Contextual Info: 55C D • fl23SbaS Q0047b3Jj M S I E 6 ' ! PNPN Thyristor Tetrode 25C 04763 D 1 _ BRY20 If '_ SIEMENS AKTIENGESELLSCHAF BRY 20 is an extinguishable PNPN silicon planar thyristortetrode in TO 12 case 5 C 4 DIN 41873 . The anode gate (Ga) is electrically connected to the case. The BRY 20 is particularly
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000h7b3bry20q60217-y20siemens thyristor+4siemens thyristor bry 20200 hnpnpnsiemens fast thyristor
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BRY20
Abstract: Thyristor 40V 120A L-13 Q60217-Y20 BRY 41
Contextual Info: BRY20 PN PN-Thyristor The BRY 20 is an extinguishable silicon PNPN planar th yristo r-te tro d e in a case 5 C 4 DIN 41 873 T O -1 2 . The anode gate (G A) is electrically connected to the case. The BRY 20 is particularly suitable fo r use as a medium fast sw itch.
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bry20q60217-y2010ltla_thyristor 40v 120a+2l-13bry 41
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BRY21
Abstract: BRY20 BRY 41 Q60217-Y20 120AB
Contextual Info: Strömen gesteuert werden als über das Anodentor z. B. BRY 20 . Wird die Spannung zwischen Anode und Kathode bei ausgeschalteter Thyristor-Tetrode plötzlich erhöht, so kann der durch den steilen Spannungsanstieg an der mittleren Sperrschichtkapazität erzeugte Verschiebungs
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bry20bry21bry 41q60217-y20+1120ab
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BRY20
Abstract: BRY 41 BRY 21 BRY21 40300G Q62702-R81
Contextual Info: Strömen gesteuert werden als über das Anodentor z. B. BRY 20 . Wird die Spannung zwischen Anode und Kathode bei ausgeschalteter Thyristor-Tetrode plötzlich erhöht, so kann der durch den steilen Spannungsanstieg an der mittleren Sperrschichtkapazität erzeugte Verschiebungs
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bry20bry 41bry 21bry21+240300gq62702-r81
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transistor Siemens 14 S S 92
Abstract: CBV2 BRY56 Q68000-A803 Q68000-A803-S1 Q68000-A803-S3 IW transistor BRY 56 A Programmable unijunction D 823 transistor
Contextual Info: ESC D • 023StiOS 0004773 1 M S Ï E G , Programmable Unijunction Transistor BRY 56 T -3 - ^ - o f SIEMENS AKTIEN6ESELLSCHAF Programmable silicon planar unijunction transistor in TO 9 2 plastic package 10 A 3 DIN 4 1 8 6 8 . H8m ax Type O rdering cod e
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23slaosbry561q68000-a803q68000-a803-s1+10068000-a803-s2q68000-a803-s3dq04777bry56transistor siemens 14 s s 92cbv2iw transistorbry 56 aprogrammable unijunctiond 823 transistor
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bry46
Abstract: thyristors BRY 300 TO64 package BRY 55 A TO-64 BRY 46 bry44 TO-64 weight TO64
Contextual Info: Thyristors T h y ris to rs BRY Series in special lo w -lin e tab package for consumer applications. CRS 1 Series in TO -5 case. CRS 3 Series in TO -64 stud-m ounted case » M 5 Type M axim um Ratings C haracteristics at T j= 2 5 °C C ontinuous forw ard
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bry46thyristorsbry 300to64 package+6bry 55 ato-64bry 46bry44to-64 weightto64
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BRY21
Abstract: BRY 21 thyristor igc
Contextual Info: BRY21 PN PN-Thyristor P re lim in a ry d a ta BRY21 is an extinguishable PNPN silicon planar thyristor tetrode in a case 5 C 4 DIN 41873 TO -12 . The anode gate (GA) is electrically connected to the case. The thyristor tetrode BRY 21 is particularly designed for use as a switch of medium
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bry21q62702-r81bry 21thyristor igc |
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BRY 300
Abstract: BRY 100 BRY 55 200 BRY 55 A HS 817 VDR Siemens BRy55 siemens thyristors bry65 BRY 21
Contextual Info: 2SC D • flSBSbQS QQQ47bR T ■ S I E 6 r . 1 C3L U t lO T a -fZ _ . 2 o -// Silicon Miniature Thyristors ~ BRY 55/30. - S I E M E N S A K T IE N G E S E L L S C H A F _BRY SS/3_00 These diffused silicon thyristors in TO 92 plastic package 10 A 3 DIN 41868} are
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qqq47brq68000-a114-f10q68000-a183-f10q68000-a184-f10+15q68000-a520-f10q68000-a185-f1050to400h2126ic623sbosbry 300bry 100bry 55 200bry 55 ahs 817vdr siemensbry55siemens thyristorsbry65bry 21
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scr 106d
Abstract: SCR bt 107 27-600R C 106D scr scr tag 12 BS9-04A tag br 203 BT106A TAG 92 bstb0226
Contextual Info: f l ✓ SCR IN METAL PACKAGE TO -3 9 T O - 18 0 ,6 A 15V 2N876 2N884 30V 2N877 2N 8 8 5 0 ,8 A RMS 2N3001 2N3005 TAG 0 ,8 A RMS 06Y BR 203 50V v v DRM RRM B L O C K IN G V O LT A G E 60V 2N878 2N886 2N3002 2N 3006 TAG 0 6 Y Y 100V 2N879 2N 887 2N 3 0 0 3 2N 3007
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to-182n8762n8842n877+162n8852n30012n30052nw121tag520ftag521fscr 106dscr bt 10727-600rc 106d scrscr tag 12bs9-04atag br 203bt106atag 92bstb0226
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TRIAC TAG 280 600
Abstract: TAG 6 600 BT100A 27-600R BSTB0246 TRIAC TAG 626 400 TRIAC TAG 92 TRIAC btw 92 triac TAG bstb0226
Contextual Info: flffli] TR IA C IN METAL AND PLASTIC PACKAGE ^ y TC-220AB TO-66 o ij a r~\ n k ic in i i*j 12 A A RMS A NEW 30V 5 OV V k TAG TAB ! 1 DMC SALES TAG 240 IS O LA TED TYPE 241 P A D ESIG N ATIO N TAG 1Ç DMQ A PMC. FOR 245 TAG 246 IO 0V T A G 2 6 0 - 1 00 TAG261-100
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o-220abtag260-100tag261-100tag265-1+16tag266-1tag420-100tag425-100tag426-100tag260-200tag261-200triac tag 280 600tag 6 600bt100a27-600rbstb0246triac tag 626 400triac tag 92triac btw 92triac tagbstb0226
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scr tag 2 200
Abstract: scr 106d 27-600R SCR bt 107 SCR BRX 49 BSTB0246 BTX30-200 scr 106B bt 151 600 scr bt 138
Contextual Info: iTïïffi SCR IN METAL PACKAGE TO-39 •7 ? 1, 6 A RMS A r>M C IM M O h T A n DUC IM 'W 15V 2N2322 2N2322A BTX30- 50 2N2323 2N2323A BTX30-100 2N2324 2N2324A 2N2325 2N2325A 2N2326 2N2326A 2N2327 2N2327A 25V 50V 60V 100V 150V vDRM 200V V 250V RRM BLOCKING VOLTAGE
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2n23222n2322abtx30-2n2323+162n2323abtx30-1002n23242n2324atag611-100tag612-100scr tag 2 200scr 106d27-600rscr bt 107scr brx 49bstb0246btx30-200scr 106bbt 151 600scr bt 138
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BRY 300
Abstract: BRY 55 A BRY 55 200 bry 55 2N883 BRY 100 2N877 2N878 TD5001 2N880
Contextual Info: sensitive gate thyristors thyristors sensibles THOMSON-CSF dv/dt Tam b = 25°C Types •o ■RM @ V r r m d m @ Vd r m Vq t Vr r m ■ tsm ■ Tj max 10 ms V DRM A (V) 0,5 A rm s / Tease = 85°C 2N877 2N878 2N879 2N880 2N881 2N882 2N883 0,5 A im s / Tease = 75°C
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2n8772n8782n8792n880+112n8812n8822n883cb-971icb-2741bry 300bry 55 abry 55 200bry 55bry 100td5001
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TD2003
Abstract: TY6004 TD4001 54-400T TY4004 TM6007 TM1007 TY504 TD6003 TM4007
Contextual Info: THYRISTORS Valeurs limites Absolute max. ratings Caractéristiques électriques Electrical characteristics V DWM TYPES •o V RWM V (AÏ 1,6 A eff (rms) / tease TD 501 TD1001 TD2001 TD3001 TD4001 TD5001 TD6001 1 1 i 1 1 1 1 1,6 A eff (rms) / 3 A eff (rms)
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td1001td2001td3001td4001+15td5001td60012n15952n15972n17702n1771td2003ty600454-400tty4004tm6007tm1007ty504td6003tm4007
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IC 4093 pin configuration
Abstract: BRY 56 B IC 4093 MARKING 30 5Y SO2894 4392 4392 a ic BCV27 BFR30 BFR31
Contextual Info: micropackaged devices m icroboitiers ^ général purpose and switching transistor selector guide THOMSON-CSF guide de sélection-transistors de com m utation et usage général Case TO'236 •c 0,5 . 0,8A 0,1 . 0,2A Type NPN PNP NPN PNP BCX 20 BCX 18 SO 2221
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o-236ic 4093 pin configurationbry 56 bic 4093+7marking 30 5yso289443924392 a icbcv27bfr30bfr31
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MEU21
Abstract: 2n 6027 transistor transistor To-106 3N81
Contextual Info: ni C R O E L E C T R O N I C S CORP ^ DE | t G T 1 7 ñ ñ □ □ 0 0 b 7 7 t j ~ T~ ¿-S'- ó f Special Devices PROGRAMMABLE UNIJUNCTION TRANSISTORS MAXIMUM RATINGS TYPE VF V max 'f (mA) VT V •v 'g k s 'g a o (V) max (JUA) max (jUA) max (nA) max (nA)
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meu21o-92bao-106mt-42+5o-92bfo-2372n 6027 transistortransistor to-1063n81
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ESM 467 600
Abstract: ESM 467 BRY 41 boitier to 126 ET 81 K kbh 2504 BRY 300
Contextual Info: C B 175 CB 200 T O 46 X 55 CB 10 (CB 76) Single phase rectifier bridges Ponts de redressement monophase Type Case V RRM (V) B oîtie r •o (A) Toper (°C) l FSM (A) V F (2) / (V) Tcase 50 °C max tp 10 ms max T (vj) 25 °C max max 'F (A) D R T 76 ■r / v r r m
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cb175esm 467 600esm 467bry 41+4boitier to 126et 81 kkbh 2504bry 300
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BRY 300
Abstract: 12T4S RSM 2322 k 471 a 2322 635 BRY 56 C 10T4S DRT76 TO-46-200 14T4S
Contextual Info: CB 10 (CB 76) (CB 7) Low power SCRs — Normal series Thyristors de faible puissance — Séries normales Case Type 'T(rsm ) (A e ff) V r r m -V d r m (V) B oîtier 0,5 and 0,8 Aeff 0,5 et 0,8 A e ff Tease <°C) •t s m (A) Toper <°C) tp 10 ms m iri 'gt
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drt7610t4s12t4sbry 300+6rsm 2322k 471 a2322 635bry 56 cto-46-20014t4s
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IXYs MCO
Contextual Info: DIXYS High Power Single Thyristor Module MC0450 V RRM = 2000 - 2200 V Preliminary Data V RSM V RRM V DSM v DRM V V 2100 2300 2000 2200 rbi4tf| I _I MCO 450-20io1 MCO 450-22io1 Maximum Ratings Symbol Test Conditions Itrms Itav T vj = T vjm Tc = 85°C; 180° sine
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mc0450450-20io1450-22io1ixys mco |
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galvo
Abstract: E12017 EL2017
Contextual Info: EL20171EL2017C é t a n t e c HIGH PERFORMANCE ANALOG INTEGRATED CIRCUITS High Efficiency Precision Servo Controller General Description Features • Low Saturation Voltage • Precision Current Sense Amplifier • Efficient Class D Switch • linear Class B Hack
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el20171el2017c20-leadgalvoe12017+1el2017
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