BRY 21 Search Results

transistor Siemens 14 S S 92

Abstract: 2sc 3150 transistor BRY 56 C Bry 56 BRY 66 A BRY 56 B
Contextual Info: ESC D • fl23StiQS 0004773 1 MS I E G , Programmable Unijunction Transistor BRY 56 7” ^ o f SIEMENS AKTIENGESELLSCHAF Programmable silicon planar unijunction transistor in TO 92 plastic package 10 A 3 DIN 41868 . K8max Type Ordering code BRY561» BRY 56 A

BRY 41

Abstract: BRY21 SIEMENS FAST THYRISTOR Tetrode pnpn
Contextual Info: ISIEG ESC D • Ö235b05 G0Q47b7 b PNPN Thyristor Tetrode BRY21 SIEMENS AKTIENGESELLSCHAF The BRY 21 is an extinguishable PNPN silicon planar thyristortetrode in T 0 12 case 5 C 4 DIN 41 873 . The anode gate (Ga ) is electrically connected to the case. The BRY 21 is particularly

SIEMENS THYRISTOR BRY 20

Abstract: 7809A SIEMENS thyristor BRY 300 BRY20 SIEMENS FAST THYRISTOR
Contextual Info: 55C D • fl23SbaS Q0047b3Jj M S I E 6 ' ! PNPN Thyristor Tetrode 25C 04763 D 1 _ BRY20 If '_ SIEMENS AKTIENGESELLSCHAF BRY 20 is an extinguishable PNPN silicon planar thyristortetrode in TO 12 case 5 C 4 DIN 41873 . The anode gate (Ga ) is electrically connected to the case. The BRY 20 is particularly

BRY20

Abstract: SIEMENS THYRISTOR SIEMENS THYRISTOR BRY 20 Q60217-Y20 200 hn PNPN SIEMENS FAST THYRISTOR
Contextual Info: 55C D • fl23SbaS Q0047b3Jj M S I E 6 ' ! PNPN Thyristor Tetrode 25C 04763 D 1 _ BRY20 If '_ SIEMENS AKTIENGESELLSCHAF BRY 20 is an extinguishable PNPN silicon planar thyristortetrode in TO 12 case 5 C 4 DIN 41873 . The anode gate (Ga) is electrically connected to the case. The BRY 20 is particularly

BRY21

Abstract: BRY20 BRY 41 Q60217-Y20 120AB
Contextual Info: Strömen gesteuert werden als über das Anodentor z. B. BRY 20 . Wird die Spannung zwischen Anode und Kathode bei ausgeschalteter Thyristor-Tetrode plötzlich erhöht, so kann der durch den steilen Spannungsanstieg an der mittleren Sperrschichtkapazität erzeugte Verschiebungs­

BRY20

Abstract: BRY 41 BRY 21 BRY21 40300G Q62702-R81
Contextual Info: Strömen gesteuert werden als über das Anodentor z. B. BRY 20 . Wird die Spannung zwischen Anode und Kathode bei ausgeschalteter Thyristor-Tetrode plötzlich erhöht, so kann der durch den steilen Spannungsanstieg an der mittleren Sperrschichtkapazität erzeugte Verschiebungs­

BRY21

Abstract: BRY 21 thyristor igc
Contextual Info: BRY21 PN PN-Thyristor P re lim in a ry d a ta BRY21 is an extinguishable PNPN silicon planar thyristor tetrode in a case 5 C 4 DIN 41873 TO -12 . The anode gate (GA) is electrically connected to the case. The thyristor tetrode BRY 21 is particularly designed for use as a switch of medium

transistor Siemens 14 S S 92

Abstract: CBV2 BRY56 Q68000-A803 Q68000-A803-S1 Q68000-A803-S3 IW transistor BRY 56 A Programmable unijunction D 823 transistor
Contextual Info: ESC D • 023StiOS 0004773 1 M S Ï E G , Programmable Unijunction Transistor BRY 56 T -3 - ^ - o f SIEMENS AKTIEN6ESELLSCHAF Programmable silicon planar unijunction transistor in TO 9 2 plastic package 10 A 3 DIN 4 1 8 6 8 . H8m ax Type O rdering cod e

BRY 300

Abstract: BRY 100 BRY 55 200 BRY 55 A HS 817 VDR Siemens BRy55 siemens thyristors bry65 BRY 21
Contextual Info: 2SC D • flSBSbQS QQQ47bR T ■ S I E 6 r . 1 C3L U t lO T a -fZ _ . 2 o -// Silicon Miniature Thyristors ~ BRY 55/30. - S I E M E N S A K T IE N G E S E L L S C H A F _BRY SS/3_00 These diffused silicon thyristors in TO 92 plastic package 10 A 3 DIN 41868} are

scr tag 2 200

Abstract: scr 106d 27-600R SCR bt 107 SCR BRX 49 BSTB0246 BTX30-200 scr 106B bt 151 600 scr bt 138
Contextual Info: iTïïffi SCR IN METAL PACKAGE TO-39 •7 ? 1, 6 A RMS A r>M C IM M O h T A n DUC IM 'W 15V 2N2322 2N2322A BTX30- 50 2N2323 2N2323A BTX30-100 2N2324 2N2324A 2N2325 2N2325A 2N2326 2N2326A 2N2327 2N2327A 25V 50V 60V 100V 150V vDRM 200V V 250V RRM BLOCKING VOLTAGE

scr 106d

Abstract: SCR bt 107 27-600R C 106D scr scr tag 12 BS9-04A tag br 203 BT106A TAG 92 bstb0226
Contextual Info: f l ✓ SCR IN METAL PACKAGE TO -3 9 T O - 18 0 ,6 A 15V 2N876 2N884 30V 2N877 2N 8 8 5 0 ,8 A RMS 2N3001 2N3005 TAG 0 ,8 A RMS 06Y BR 203 50V v v DRM RRM B L O C K IN G V O LT A G E 60V 2N878 2N886 2N3002 2N 3006 TAG 0 6 Y Y 100V 2N879 2N 887 2N 3 0 0 3 2N 3007

IC 4093 pin configuration

Abstract: BRY 56 B IC 4093 MARKING 30 5Y SO2894 4392 4392 a ic BCV27 BFR30 BFR31
Contextual Info: micropackaged devices m icroboitiers ^ général purpose and switching transistor selector guide THOMSON-CSF guide de sélection-transistors de com m utation et usage général Case TO'236 •c 0,5 . 0,8A 0,1 . 0,2A Type NPN PNP NPN PNP BCX 20 BCX 18 SO 2221

MEU21

Abstract: 2n 6027 transistor transistor To-106 3N81
Contextual Info: ni C R O E L E C T R O N I C S CORP ^ DE | t G T 1 7 ñ ñ □ □ 0 0 b 7 7 t j ~ T~ ¿-S'- ó f Special Devices PROGRAMMABLE UNIJUNCTION TRANSISTORS MAXIMUM RATINGS TYPE VF V max 'f (mA) VT V •v 'g k s 'g a o (V) max (JUA) max (jUA) max (nA) max (nA)

IC 4093 pin configuration

Abstract: IC 4093 marking 5Y bry 55 usage 4392 BFR31 BCV27 BFR30 R 25 10K1001
Contextual Info: ÿ n channel field effect transistors transistors à effet de champ canal ri iho m so n -csf Types SO 4416 30 0,1 5 15 B F R 3 0 (R BFR31 (R) 25 25 0,2 0,2 4 1 10 5 SO 245 A (R) SO 245 B (R) SO 245 C (R) 30 30 30 5 5 5 SO 3966 30 0,1 BSR 56 BSR 57 BSR 58

branch metric

Abstract: Viterbi Decoder viterbi algorithm branch metric report trellis 5/6 decoder Viterbi Trellis Decoder texas DSP56300 DSP56600 IS-136 Convolutional decoder
Contextual Info: Implementing Viterbi Decoders Using the VSL Instruction on DSP Families DSP56300 and DSP56600 by Dana Taipale This application report describes how to generate, from a set of convolutional code polynomials, the assembly code needed for implementation of a Viterbi decoder.

kc 237

Contextual Info: A M P * C O A X IC O N * 5 0 O H M , R.F. C O N N E C T O R S AMP INCORPORATED r i: I | } * L b J l» e l > W • .iiilip ' O a * Ju K it I in n A W on S-23-7& 1 iS - a o - a iJ j RELEASED / r e v is e d S E R IE S C P A N E L J A C K S H a r r is . t H J j- g , P i . 1 7 1 0 5

Contextual Info: EN G . nu CCPY DWG. NO. CONFIGURATION: t o l e r a n c e + / - .005 u n le s s o th e rw is e s p e c ifie d , M S ^ Ö IZ /Z V Ö O I! ELECTRICAL: NOMINAL IMPEDANCE (O H M S )_ 5 - 0 FREQUENCY RANGE (0 H 7) D . £ . T O I i.0 ^ VOLTAGE RATING (MAX. VRMS) 5 ~ O Q

PAL20V8

Abstract: BRY 56 C MACHXL AMD pal20v8 DRAM controller EPX780 rick jd MACH210 BRY 56 B Intel AP-726
Contextual Info: A AP-726 APPLICATION NOTE Interfacing the i960 Jx Microprocessor to the NEC µPD98401* Local ATM Segmentation and Reassembly SAR Chip Rick Harris SPG 80960 Applications Engineer Intel Corporation Semiconductor Products Group Mail Stop CH6-311 5000 W. Chandler Blvd.

CY7BB991-7

Abstract: B00J AMD pal20v8 INTEL AP-72 Intel AP-726
Contextual Info: in tg l AP-726 APPLICATION NOTE Interfacing the i960 Jx Microprocessor to the NEC HPD98401* Local ATM Segmentation and Reassembly SAR Chip S e p te m b e r , 2 1 , 1 9 9 5 I Order Number: 272779-001 1-665 AP-726 Benefits of using the PCI-SDK include: This application note describes the interface between Intel's • The PCI-SDK plugs directly into a DOS-based

Contextual Info: EIN UNTERNEI-MEN VON Allgemeine Angaben General Features Roederstein Scheibenkondensatoren Disc capacitors 7. Lieferbare Ausfiihrungen der Drahtanschliisse / Available lead configurations Abmessungen in mm / Dimensions in mm gesickte AnschluBdrahte innensicke

MN1435

Abstract: MN1405 mn1400 mn1421 MN1404 MN1403 MN1430 panasonic MN1405 MN1455 MN1402
Contextual Info: p X Ñ X s o Ñ lC IN D I/E LE E -C i ò 75^ 1 ^ 3 5 a 5 g DOQSfc-a^ fa MN1400 Family—1_ MN1400/1420/1430/1450/1460/1456A/14531 Series t?-l'C70D2StilL—5 ^ 4 -B Ìt M N 1 4 0 0 ,M N 1 4 2 0 ,M N 1 4 3 0 ,M N 1 4 5 0 , M N 1 4 6 0 , M N 1 4 5 6 A ,M Ñ 1 4 5 3 1

Contextual Info: warn H E W L E T T •fSSfl PA C K A R D SC Duplex Single Mode Transceiver Technical Data HFCT-5205 Features Description • SC D uplex S in gle Mode T ransceiver The HFCT-5205 transceiver is a high performance, aost effective module for serial optical data

AN2060

Abstract: MCM69C232 MPC860SAR motorola application note
Contextual Info: Order this document by AN2060/D AN2060 Application Note MPC860SAR Microprocessor ATM CAM Interface Application V1.0 - Initial release V1.1 - August 5, 1998 - Fixed bugs found during Verilog verification: 1 changed match port logic for MS to non-inverting, (2) corrected error in register programming in ‘Insert Value’, ‘Delete Value’. V1.2 1/02 Reformat.

LDR 03

Abstract: valvo halbleiter LDR -03 cny63 CNY62 BYX 71 800 CXY19 VALVO ldr 07 BZW10-12
Contextual Info: Halbleiter­ bauelemente • 1981/82 N, Bauelemente l m für die gesamte i f Elektronik V A L V O Valvo bietet das breiteste Produktprogram m an Bauelementen für die gesamte Elektronik in Deutschland: Bildröhren A blenkteile Tuner Lautsprecher Transform atoren