BR 39 Search Results

Contextual Info: •Cylindrical Type Lithium Batteries Bare cell BR-C BR-A BR-2/3A BR-2/3A Lithium Battery Model Number Specifications Nominal Voltage V Nominal Capacity(mAh) Tab configuration Page/Fig No. BR-CT2P 3 5,000 Tab (12mm) 4 /No.1 BR-CC7P 3 5,000 Connecter 4 /No.2

PC21002

Contextual Info: Data Sheet, Rev. 1.4, Jun. 2005 HYS72D64301[G/H]BR–[5/6]–B H YS72D64301[G/H]BR–[5/6]–B HYS72D128xxx[G/H]BR– HYS72D128xxx[G/H]BR–[5/6/7]–B [5/6/7]–B HYS72D256220[G/H]BR–[5/6/7]–B HYS72D256220[G/H]BR– HYS72D256320[G/H]BR–[5/6/7]–B [5/6/7]–B

HYS72D128300

Abstract: DDR400 PC3200R-30331-C0 pc2100r 25330 z
Contextual Info: Data Sheet, Rev. 1.2, Dec. 2004 HYS72D128300[G/H]BR–[5/6/7]–B H YS72D128300[G/H]BR– [5/6/7]–B HYS72D128321[G/H]BR–[5/6/7]–B HYS72D128321[G/H]BR– HYS72D256220[G/H]BR–[5/6/7]–B [5/6/7]–B HYS72D256320GBR–[6/7]–B HYS72D256220[G/H]BR–

PC3200R-30331-C0

Contextual Info: Data Sheet, Rev. 1.1, Sep. 2004 HYS72D128300[G/H]BR–[5/6/7]–B H YS72D128300[G/H]BR– [5/6/7]–B HYS72D128321[G/H]BR–[5/6/7]–B HYS72D128321[G/H]BR– HYS72D256220[G/H]BR–[5/6/7]–B [5/6/7]–B HYS72D256320GBR–[6/7]–B HYS72D256220[G/H]BR–

Bobbins and Accessories

Abstract: E16 bobbin bobbins philips bobbin PQ2026 ER bobbin
Contextual Info: 3923 EN BR magn.prd.acc 04-09-1998 13:29 Philips Components Bobbins & Accessories Pagina 1 Winding and assembling your perfect component 3923 EN BR magn.prd.acc 3923 EN BR magn.prd.acc 04-09-1998 13:29 Pagina 2 Our bobbins… …your basis for perfect windings

Contextual Info: Series ITS ITS 3100 A BR and ITS 4100 A (BR) ITS 3100 R (BR) and ITS 4100 R (BR) ITS ITS ITS Reverse Reverse Bayonet Bayonet Reverse Bayonet Assemblies Assemblies Assemblies Front Panel Mount Square Flange Receptacle Assembly with Backshell for Termination of UNI4883 Rubber Conduits

ITS4100

Abstract: Commital CONTACT UNI4883 31045 20-27P TS3100
Contextual Info: Series ITS ITS 3100 A BR and ITS 4100 A (BR) ITS 3100 R (BR) and ITS 4100 R (BR) ITS ITS ITS Reverse Reverse Bayonet Bayonet Reverse Bayonet Assemblies Assemblies Assemblies Front Panel Mount Square Flange Receptacle Assembly with Backshell for Termination of UNI4883 Rubber Conduits

BYV42-200

Abstract: BYV72E-200 BY359-1500 PBYR1540CT PBYR1535CT PBYR10-25 BY359X-1500 BYV42-150 BYV29F500 BYV72F-200
Contextual Info: Philips Semiconductors Index Power Diodes Type Number BR211-140 BR211-160 BR 211-180 BR 211-200 BR211-220 BR211-240 BR 211-260 BR 211-280 Page 30 BR211SM-140 BR211SM-160 BR211SM-180 BR211SM-200 BR211SM-220 BR211SM-240 BR211SM-260 BR211SM-280 35 BY229-200 BY229-400

TS3100

Abstract: Commital CONTACT ITS4100 UNI4883
Contextual Info: Series ITS ITS 3101 A BR and ITS 4101 A (BR) ITS 3101 R (BR) and ITS 4101 R (BR) S 3100 (ZLF) (ZLF) TS 3100AA(NO) (PG)and andITS ITS4100 4100AA(NO) (PG) nel3100 Mount Square Flange Receptacle Assembly Panel Mount Square Flange Receptacle S A (NO) and ITS

pc2100r 25330 z

Abstract: cmos 4070 pc2700r-25330-c0 32 h 380 a 63 DDR400 DDR400B HYS72D128320 HYS72D32300 HYS72D64300 HYS72D64320
Contextual Info: March 2007 HYS72D32300[G/H]BR–[5/6/7]–C HYS72D64300[G/H]BR–[5/6/7]–C HYS72D64320[G/H]BR–[5/6]–C HYS72D128320[G/H]BR–[6/7]–C 184-Pin Registered Double Data Rate SDRAM Module Reg DIMM DDR SDRAM Internet Data Sheet Rev. 1.32 Internet Data Sheet

pc2700r-25330-c0

Abstract: DDR400 HYS72D128320 HYS72D32300 HYS72D64300 HYS72D64320 HYS72D64300GBR-6-C
Contextual Info: Data Sheet, Rev. 1.2, Oct. 2004 HYS72D32300[G/H]BR–[5/6/7]–C HYS72D64300[G/H]BR–[5/6/7]–C HYS72D64320[G/H]BR–[5/6]–C HYS72D128320[G/H]BR–[6/7]–C 184-Pin Registered Double Data Rate SDRAM Module Reg DIMM DDR SDRAM Memory Products N e v e r s t o p

Contextual Info: Data Sheet, Rev. 1.3, Nov. 2005 HYS72D32300[G/H]BR–[5/6/7]–C HYS72D64300[G/H]BR–[5/6/7]–C HYS72D64320[G/H]BR–[5/6]–C HYS72D128320[G/H]BR–[6/7]–C 184-Pin Registered Double Data Rate SDRAM Module Reg DIMM DDR SDRAM Memory Products N e v e r s t o p

Contextual Info: Transient Voltage Suppressors sa series 500 Watt Peak Power Rating/DO-15 TYPE Vwm NUMBER It V br @ It MAX MAX b@ vc @ Ipp a v br TYPE V WM NUMBER MAX MAX Id @ VwM vc @ mADC |jA DC h V BR @ IT Ipp a v br V A mV/°C Ipp V WM Ipp mADC pA DC V A mV/°C See Notes

1c6105a

Contextual Info: SENSITRON SEMICONDUCTOR TVS 2000 CATALOG 500 Watt Transient Voltage Suppressor Bi-directional Chip 6.8 to 200Volts SERIES TYPE BREAKDOWN VOLTAGE V(BR)1 AT I(BR) TEST CURRENT I(BR) 3-14 500W Min. V dc mA dc 1C6102 1C6102A 1C6103 1C6103A 1C6104 1C6104A 1C6105

Bendix Transistors

Abstract: 2N1149 RCA 2n1184a 2N1152 2N1151 2N1150 RCA 2N1174 transitron Emihus 2N1193
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number hFE V V(BR)CEO - V(BR)CEO Manufacturer TASSOl Ic Max (A) fT (Hz) Cobo Max (F) ICBO Max Y(BR)CBO Po Max Derate at Toper (A) (V) (W) (WrC) eC) Max Package Style >= 400 V, (Cont'd) See Index 1 800 50M 25 14p lOu

st3043

Abstract: LOW-POWER SILICON NPN 40352 2N773 ST3042 bsy11 2S001 2SC859
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number hFE V V(BR)CEO - V(BR)CEO Manufacturer TASSOl Ic Max (A) fT (Hz) Cobo Max (F) ICBO Max Y(BR)CBO Po Max Derate at Toper (A) (V) (W) (WrC) eC) Max Package Style >= 400 V, (Cont'd) See Index 1 800 50M 25 14p lOu

BR3500

Abstract: hallsensor magnet UGN3503U
Contextual Info: Allegro MicroSystems, Inc Werksvertretung FERRITE-MAGNET Y25 - O09.0044 cylindrical N AD 4,0 S B h 4,0 Magnet Data Parameter Min. Limits Typ. Max. Br 3500 3900 G α Br -0,18 -0,19 %/°C 250 °C 3,95 4,0 mm 3,95 4,0 mm Symbol Ferrite Material Magnetic flux density

Newmarket Transistors

Abstract: sgs-ates transistors 2G108 2AC128-01 2N174 RCA 2BD124 2G381 2N109 2G271 2N123
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number hFE V V(BR)CEO - V(BR)CEO Manufacturer TASSOl Ic Max (A) fT (Hz) Cobo Max (F) ICBO Max Y(BR)CBO Po Max Derate at Toper (A) (V) (W) (WrC) eC) Max Package Style >= 400 V, (Cont'd) See Index 1 800 50M 25 14p lOu

2N3694

Abstract: 2N5219 2N5127 2N5131 2N5132 2N5227 MPS-A05 MPS-A06 MPS-A10 MPS-A20
Contextual Info: Econoline Plastic-Molded Silicon SEPT” Transistors i GENERAL-PURPOSE SMALL-SIGNAL AMPLIFIERS TO-92 Package EBC Pinning D-C C U R R E N T GAIN >- Typ e No. cc < o CL Pd (hFE ) Lim its T a = V(BR| V(BR) V(BR) ICBO Conditions nA 25 C CBO CEO EBO VcE lc

Contextual Info: SK100GH12T4T =' Q BR SKA -%2&'' ,.8& */'& '5& /E/&1 Absolute Maximum Ratings Symbol Conditions IGBT PK:9 =T Q BR SK <K =T Q @WR SK <KY; SEMITOP 4 IGBT module SK100GH12T4T .5'( @BVV P @BX L =' Q WV SK @VV L CVV L [BV P =T Q @RV SK @V _' =' Q BR SK @VB L =' Q WV SK

PC3200R-30331-C0

Abstract: HYS72D128300GBR-5-B HYS72D256220GBR-5-B PC2700R-25330-D0 HYS72D128300HBR-6-B pc2100r 25330 z DDR400 DDR400B HYS72D64301 pc2700r-25330-c0
Contextual Info: January 2007 HYS72D64301[G/H]BR–[5/6]–B HYS72D128xxx[G/H]BR–[5/6/7]–B HYS72D256220[G/H]BR–[5/6/7]–B HYS72D256320[G/H]BR–[5/6/7]–B 1 8 4 - P i n R e g i s t e r e d D o u bl e - D a t a - R a t e S D R A M M o d u l e DDR SDRAM RoHS Compliant Products

PN2222A MOTOROLA

Abstract: valvo emihus philco-ford VALVO GMBH 2SC1330 DIODE 6AA 2N709A Elcoma KT503A
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 BO 85 90 95 RN5816 RN5B16 RN5818 RN5818 HSE125 HSE210 HSE171 2Nl051 2N2480 2N2479 Manufacturer V(BR)CEO hFE Ie Max A fT (Hz) Cobo V(BR)CBO Max PD Max Derate

Contextual Info: NEM2015B20 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)45 I(C) Max. (A)4.5 Absolute Max. Power Diss. (W)39 Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

Contextual Info: 2MBI75L060 Transistors Half Bridge IGBT Power Module Isolated Case Y/N Yes Circuits Per Package1 V(BR)CES (V)600 V(BR)GES (V) I(C) Max. (A)75 Absolute Max. Power Diss. (W)395‚ Minimum Operating Temp (øC) Maximum Operating Temp (øC) Thermal Resistance Junc-Case